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1. 发明授权

US07609778B2 Methods, apparatus, and systems for reducing interference on nearby conductors 失效
标题翻译：减少对附近导体干扰的方法，装置和系统
公开(公告)号：US07609778B2
公开(公告)日：2009-10-27
申请号：US10022856
申请日：2001-12-20
申请人： Karl Fecteau , Claude Thibeault , Yvon Savaria , Yves Blaquiere , Jean-Jacques Laurin , Zhong-Fang Jin
发明人： Karl Fecteau , Claude Thibeault , Yvon Savaria , Yves Blaquiere , Jean-Jacques Laurin , Zhong-Fang Jin
IPC分类号： H01L25/34
CPC分类号： H04L25/14 , H03K5/135
摘要： In a method of data transmission according to one embodiment of the invention, data transitions on adjacent conductors are separated in time. In a method of data transmission according to another embodiment of the invention, signals on adjacent conductive paths pass through different alternating sequences of inversions and regenerations. In a method of data transmission according to a further embodiment of the invention, data transitions having the same clock dependence are separated in space.
摘要翻译：在根据本发明的一个实施例的数据传输方法中，相邻导体上的数据转换在时间上是分离的。在根据本发明另一实施例的数据传输方法中，相邻导电路径上的信号通过不同的交替和再生序列。在根据本发明的另一实施例的数据传输的方法中，具有相同时钟依赖性的数据转换在空间上分离。

2. 发明授权

US07763979B2 Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereof 有权
标题翻译：有机绝缘膜及其制造方法，使用该有机绝缘膜的半导体装置及其制造方法
公开(公告)号：US07763979B2
公开(公告)日：2010-07-27
申请号：US11534941
申请日：2006-09-25
申请人： Koichi Ohto , Tatsuya Usami , Noboru Morita , Kazuhiko Endo
发明人： Koichi Ohto , Tatsuya Usami , Noboru Morita , Kazuhiko Endo
IPC分类号： H01L25/34
CPC分类号： H01L21/7681 , C23C16/30 , C23C16/36 , C23C16/401 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The dielectric constants of SiC and SiCN that are currently the subjects of much investigation are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the interconnection size and the spacing of interconnections brought about by the reduction in device size, there have arisen strong demands that dielectric constants should be further reduced.Furthermore, because the etching selection ratio of SiOC to SiCN as well as that of SiOC to SiC are small, if SiCN or SiC is used as the etching stopper film, the surface of the metal interconnection layer may be oxidized at the time of photoresist removal, which gives rise to a problem of high contact resistance.The present invention relates to an organic film made of one of SiOCH, SiCHN and SiCH that is formed using, as a source, a polyorganosilane whose C/Si ratio is at least 5 or greater and molecular weight is 100 or greater, and a semiconductor device wherein such an organic insulating film is used, and more particularly to a semiconductor device having a trench structure.
摘要翻译：目前被广泛研究的SiC和SiCN的介电常数分别为4.5〜5左右，SiOC为2.8〜3.0左右。随着器件尺寸减小引起的互连尺寸和互连间距的进一步小型化，出现了强烈的要求，即应进一步降低介电常数。此外，由于SiOC与SiCN的蚀刻选择比以及SiOC与SiC的蚀刻选择比小，因此如果使用SiCN或SiC作为蚀刻停止膜，则金属配线层的表面在光刻胶去除时可能被氧化，这导致高接触电阻的问题。本发明涉及使用以C / Si比为5以上且分子量为100以上的聚有机硅烷作为源的SiOCH，SiCHN和SiCH之一构成的有机膜，以及半导体使用这种有机绝缘膜的装置，更具体地说涉及具有沟槽结构的半导体器件。

3. 发明授权

US07626196B2 Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor 有权
标题翻译：有机薄膜晶体管及其制造方法以及具有有机薄膜晶体管的半导体器件
公开(公告)号：US07626196B2
公开(公告)日：2009-12-01
申请号：US10978399
申请日：2004-11-02
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryoto Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryoto Imahayashi
IPC分类号： H01L25/34
CPC分类号： H01L51/0545 , H01L51/0003 , H01L51/0037
摘要： There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.
摘要翻译：存在的问题在于，制造有机薄膜晶体管的常规方法需要专用设备，并且其中：相对于材料的使用量形成少量的有机半导体膜; 大部分废旧材料被丢弃。此外，需要频繁地进行设备维护，例如清洁装置杯或室的内部，以便去除由废弃材料造成的污染。因此，需要维护设备的材料和工时的巨大成本。在本发明中，通过在用于形成有机半导体膜的第一基板和用于注入的第二基板之间形成孔，形成均匀的有机半导体膜，所述第二基板在形成于特定点处的绝缘膜通过注入有机半导体膜材料由于对孔径的毛细作用而进入孔径。形成在特定点的绝缘膜能够形成具有高可控性的有机半导体膜。此外，绝缘膜也可以用作保持孔的间隔物，即基板之间的间隔（间隙）。

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