专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11251140B2 Transient stabilized SOI FETs 有权
公开(公告)号：US11251140B2
公开(公告)日：2022-02-15
申请号：US16875615
申请日：2020-05-15
申请人： pSemi Corporation
发明人： Robert Mark Englekirk , Keith Bargroff , Christopher C. Murphy , Tero Tapio Ranta , Simon Edward Willard
IPC分类号： H03B1/00 , H03K3/00 , H01L23/60 , H01L27/12 , H01L29/786 , H03K17/687 , H01L23/552 , H01L29/10 , H01L23/66 , H03K17/0412 , H01L21/762 , H03K17/0416 , H03K17/042 , H03K17/14
摘要： Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the same VDS as during an active mode. In another embodiment, a FET is configured such that, in a standby mode, current flow through the FET is interrupted while maintaining essentially the same VGS as during the active mode. In another embodiment, a FET is configured such that, in a standby mode, the FET is switched into a very low current state (a “trickle current” state) that keeps both VGS and VDS close to their respective active mode operational voltages. Optionally, S-contacts may be formed in an IC substrate to create protected areas that encompass FETs that are sensitive to accumulated charge effects.

2. 发明授权

US11152930B2 Arrangement for a photodetector circuit for low power applications, and a corresponding method and a computer program product 有权
公开(公告)号：US11152930B2
公开(公告)日：2021-10-19
申请号：US16394099
申请日：2019-04-25
申请人： Oura Health Oy
发明人： Petteri Järvelä , Tero Vallius
IPC分类号： G01J1/44 , H03F1/08 , H03K17/795 , H03K17/0416
摘要： The present invention introduces an arrangement for enhancing the performance of an electronic circuit comprising a phototransistor (Q). Either a common-collector or a common-emitter connected phototransistor (Q) has a main resistor (RL), and at least one external bias resistors (RL2, RL3, RL4), each in parallel to one another. The microcontroller may directly control the voltage outputs or act via respective switches (S1, S2) regarding each respective resistor. When the electronic circuit with the phototransistor (Q) is switched on, at least one of the external bias resistors (RL2, RL3, RL4) are switched on. The voltage output rise time is short, and when the bias has been set, the external bias resistor(s) are disconnected functionally. This means that during the actual measurement with the electric circuit, only the main resistor (RL) is used in the connection.

3. 发明授权

US10771055B2 Switching device and power conversion device 有权
公开(公告)号：US10771055B2
公开(公告)日：2020-09-08
申请号：US16321096
申请日：2017-07-25
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Nikolay Nikolayevich Olyunin , Alexander Nikolayevich Khripkov , Alexander Gennadyevich Chernokalov
IPC分类号： H03K17/687 , H03K17/10 , H03K17/0412 , H02M1/08 , H02M3/335 , H03K17/0416 , H03K17/06 , H03K17/081 , H03K17/0814 , H02M1/00
摘要： Provided is a switching device including: a cascode switch including at least two transistors connected in series and receiving a switching control signal; and a third switch receiving the switching control signal, wherein the at least two transistors include a first transistor receiving the switching control signal through a control terminal and a second transistor having a control terminal connected to a first voltage source, and wherein the third switch is connected between the control terminal and the first terminal of the second transistor, is turned off when the first transistor is turned on, and is turned on when the first transistor is turned off.

4. 发明授权

US10554216B2 Current steering structure with improved linearity 有权
公开(公告)号：US10554216B2
公开(公告)日：2020-02-04
申请号：US15995034
申请日：2018-05-31
申请人： SYNAPTICS INCORPORATED
发明人： Dan Shen , Lorenzo Crespi
IPC分类号： H03M1/08 , H03F3/185 , H03M1/74 , H03M1/10 , H03K17/0416 , H03M1/06
摘要： Systems and methods are provided for improved linearity of audio amplifiers. In one example, a system includes a first current source configured to provide a first current signal having a first current source output capacitance, and a second current source configured to provide a second current signal having a second current source output capacitance, where the first and second current source output capacitances are a different value. The system further includes a first capacitor compensation device coupled to an output of the first current source configured to provide a capacitance value to compensate for the second current source output capacitance, and a second capacitor compensation device coupled to an output of the second current source configured to provide a capacitance value to compensate for the first current source output capacitance. The system further includes a plurality of switches configured to switch the first and second current signals.

5. 发明授权

US10411698B2 Cascode connected SiC-JFET with SiC-SBD and enhancement device 有权
公开(公告)号：US10411698B2
公开(公告)日：2019-09-10
申请号：US16102516
申请日：2018-08-13
申请人： RENESAS ELECTRONICS AMERICA INC.
发明人： Tetsuo Sato , Koichi Yamazaki
IPC分类号： H02M3/155 , H03K17/687 , H03K17/567 , H03K17/74 , H03K17/0416 , H02M7/00
摘要： An apparatus that includes a first device connected to an inductor. The first device includes a first silicon carbide (SiC) junction gate field-effect transistor (JFET), a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET, and a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET. An inductor input terminal is connected to the drain of the first SiC JFET.

6. 发明授权

US10103722B2 Differential switch circuit 有权
公开(公告)号：US10103722B2
公开(公告)日：2018-10-16
申请号：US15615079
申请日：2017-06-06
申请人： Realtek Semiconductor Corp.
发明人： Bo-Yu Chen , Leaf Chen
IPC分类号： H03K17/00 , H03K17/0412 , H03K17/0416 , H03K17/687 , H03K17/94 , H03K17/06
摘要： A differential switch circuit includes: a first transistor having a first terminal coupled with a first input terminal, a second terminal coupled with a first output terminal, and a control terminal coupled with a switch signal receiving terminal; a second transistor having a first terminal coupled with a second input terminal, a second terminal coupled with a second output terminal, and a control terminal coupled with the switch signal receiving terminal; a central switch element positioned between the control terminals of the first and second transistors; and a switch element control circuit for controlling the central switch element based on a switch signal. When the switch signal turns on the first and second transistors, the switch element control circuit turns off the central switch element, and when the switch signal turns off the first and second transistors, the switch element control circuit turns on the central switch element.

7. 发明申请

US20180006638A1 DIFFERENTIAL SWITCH CIRCUIT 审中-公开
公开(公告)号：US20180006638A1
公开(公告)日：2018-01-04
申请号：US15615079
申请日：2017-06-06
申请人： Realtek Semiconductor Corp.
发明人： Bo-Yu CHEN , Leaf CHEN
IPC分类号： H03K17/0412 , H03K17/0416 , H03K17/687 , H03K17/94
CPC分类号： H03K17/04126 , H03K17/04163 , H03K17/063 , H03K17/687 , H03K17/94 , H03K2017/066 , H03K2217/0054
摘要： A differential switch circuit includes: a first transistor having a first terminal coupled with a first input terminal, a second terminal coupled with a first output terminal, and a control terminal coupled with a switch signal receiving terminal; a second transistor having a first terminal coupled with a second input terminal, a second terminal coupled with a second output terminal, and a control terminal coupled with the switch signal receiving terminal; a central switch element positioned between the control terminals of the first and second transistors; and a switch element control circuit for controlling the central switch element based on a switch signal. When the switch signal turns on the first and second transistors, the switch element control circuit turns off the central switch element, and when the switch signal turns off the first and second transistors, the switch element control circuit turns on the central switch element.

8. 发明授权

US09831853B2 Current-controlled CMOS logic family 有权
公开(公告)号：US09831853B2
公开(公告)日：2017-11-28
申请号：US14826557
申请日：2015-08-14
申请人： BROADCOM CORPORATION
发明人： Armond Hairapetian
IPC分类号： H03K17/04 , H03K3/356 , H03K3/3562 , H03K17/041 , H03K17/0416 , H03K17/693 , H03K19/094 , H03K19/21
CPC分类号： H03K3/356139 , H03K3/356043 , H03K3/3562 , H03K17/04 , H03K17/04106 , H03K17/04163 , H03K17/693 , H03K19/09432 , H03K19/215 , H03K2217/0036
摘要： Various circuit techniques for implementing ultra high speed circuits use current-controlled CMOS (C3MOS) logic fabricated in conventional CMOS process technology. An entire family of logic elements including inverter/buffers, level shifters, NAND, NOR, XOR gates, latches, flip-flops and the like are implemented using C3MOS techniques. Optimum balance between power consumption and speed for each circuit application is achieve by combining high speed C3MOS logic with low power conventional CMOS logic. The combined C3MOS/CMOS logic allows greater integration of circuits such as high speed transceivers used in fiber optic communication systems.

9. 发明授权

US09100007B2 Cascode amplifier 有权
标题翻译：串级放大器
公开(公告)号：US09100007B2
公开(公告)日：2015-08-04
申请号：US13602429
申请日：2012-09-04
申请人： Haiyang Zhu , Ronald A. Kapusta
发明人： Haiyang Zhu , Ronald A. Kapusta
IPC分类号： H03F1/22 , H03K17/0416
CPC分类号： H03K17/04163 , H03F1/223
摘要： A slew rate booster, switchably enabled selector, or other arrangement may be included in a cascode amplifier to keep the current buffer/common gate transistor and the input/common source transistor saturated as the voltage at the source of the current buffer transistor drops during a transient input voltage spike at the gate of the input transistor. In some instances a higher potential may be supplied to a gate of the current buffer transistor during an initial phase of the settling period than during a second phase of the settling period when a lower potential may be applied. Other techniques may be used in different embodiments. Devices and methods are provided.
摘要翻译：串联放大器可以包括压摆率升压器，可切换使能的选择器或其他布置，以保持当前缓冲器/公共栅极晶体管和输入/公共源极晶体管饱和，因为当前缓冲晶体管的源极处的电压在在输入晶体管的栅极处的瞬态输入电压尖峰。在一些情况下，在稳定周期的初始阶段期间可以将较高的电势提供给当前缓冲晶体管的栅极，而不是在施加较低电位的稳定周期的第二阶段期间。可以在不同的实施例中使用其他技术。提供设备和方法。

10. 发明申请

US20050258873A1 Current-controlled CMOS circuits with inductive broadbanding 有权
标题翻译：带电感宽带的电流控制CMOS电路
公开(公告)号：US20050258873A1
公开(公告)日：2005-11-24
申请号：US11125455
申请日：2005-05-10
申请人： Michael Green
发明人： Michael Green
IPC分类号： H03F3/45 , H03K17/0416 , H03K17/693 , H03K19/017 , H03K19/094
CPC分类号： H03F1/42 , H03F3/45183 , H03F3/72 , H03F2200/36 , H03F2203/45506 , H03F2203/45631 , H03F2203/45638 , H03F2203/45702 , H03F2203/45704 , H03F2203/7203 , H03K17/04163 , H03K17/693 , H03K19/01707 , H03K19/09432
摘要： Various circuit techniques for implementing ultra high speed circuits use current-controlled CMOS (C3MOS) logic with inductive broadbanding fabricated in conventional CMOS process technology. Optimum balance between power consumption and speed for each circuit application is achieved by combining high speed C3MOS logic with inductive broadbanding/C3MOS logic with low power conventional CMOS logic. The combined C3MOS logic with inductive broadbanding/C3MOS/CMOS logic allows greater integration of circuits such as high speed transceivers used in fiber optic communication systems.
摘要翻译：用于实现超高速电路的各种电路技术使用以常规CMOS工艺技术制造的感应宽带的电流控制CMOS（C 3/4 MOS）逻辑。通过将高速C“3”MOS逻辑与感应宽带/ C“3”MOS逻辑与低功耗常规CMOS逻辑相结合，实现了每个电路应用的功耗和速度之间的最佳平衡。具有感应宽带/ C / O MOS / CMOS逻辑的组合的三极管MOS逻辑允许诸如在光纤通信系统中使用的高速收发器之类的电路的更大集成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式