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1. 发明申请

US20180212576A1 TRANSCONDUCTANCE AMPLIFIER AND PHASE SHIFTER 审中-公开
公开(公告)号：US20180212576A1
公开(公告)日：2018-07-26
申请号：US15744637
申请日：2015-10-29
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Takaya MARUYAMA , Eiji TANIGUCHI
IPC分类号： H03F3/45 , H03H11/20
CPC分类号： H03F3/45 , H03D7/1441 , H03D7/1458 , H03D7/1466 , H03F1/3211 , H03F3/45183 , H03F3/72 , H03F2203/45018 , H03F2203/45306 , H03F2203/45318 , H03F2203/45504 , H03F2203/45506 , H03F2203/45611 , H03F2203/7206 , H03H11/20
摘要： A transconductance amplifier is provided with: a cross-coupled differential pair (31) having one set of differential pair transistors in which signals whose polarities are opposite to each other are inputted to gates thereof, drains of one of the differential pair transistors being connected to drains of another one of the differential pair transistors, and a control circuit (32) comprised of logical circuits, for outputting a binary signal to the common source of each of the differential pair transistors on the basis of an output-level control signal and a polarity control signal which are inputted thereto.

2. 发明授权

US09800212B2 FBDDA amplifier and device including the FBDDA amplifier 有权
公开(公告)号：US09800212B2
公开(公告)日：2017-10-24
申请号：US14863184
申请日：2015-09-23
申请人： STMicroelectronics S.r.l.
发明人： Andrea Barbieri , Sergio Pernici
IPC分类号： H03G3/00 , H03F1/32 , H03F3/45 , H04R3/00 , H04R19/00 , H04R19/04
CPC分类号： H03F1/3211 , H03F3/45197 , H03F3/45273 , H03F3/45708 , H03F2200/261 , H03F2203/45044 , H03F2203/45101 , H03F2203/45116 , H03F2203/45136 , H03F2203/45151 , H03F2203/45156 , H03F2203/45361 , H03F2203/45492 , H03F2203/45506 , H04R3/00 , H04R19/005 , H04R19/04 , H04R2201/003
摘要： A FBDDA amplifier comprising: a first differential input stage, which receives an input voltage; a second differential input stage, which receives a common-mode voltage; a first resistive-degeneration group coupled to the first differential input; a second resistive-degeneration group coupled to the second differential input; a differential output stage, generating an output voltage; a first switch coupled in parallel to the first resistive-degeneration group; and a second switch coupled in parallel to the second resistive-degeneration group. The first and second switches are driven into the closed state when the voltage input assumes a first value such that said first input stage operates in the linear region, and are driven into the open state when the voltage input assumes a second value, higher than the first value, such that the first input stage operates in a non-linear region.

3. 发明授权

US09252723B2 Distributed quality factor adjustment 有权
标题翻译：分布式品质因素调整
公开(公告)号：US09252723B2
公开(公告)日：2016-02-02
申请号：US14101722
申请日：2013-12-10
申请人： Broadcom Corporation
发明人： Ali Afsahi
IPC分类号： H03F1/56 , H03F3/21 , H03F1/22 , H03F3/195 , H03F3/24 , H03F3/45
CPC分类号： H03F1/565 , H03F1/223 , H03F3/195 , H03F3/21 , H03F3/245 , H03F3/45179 , H03F2203/45506 , H03F2203/45644
摘要： A system includes a differential circuit, multiple cross-coupled transconductance circuits. In some implementations, the differential circuit may include an inductor coil in a balun or transformer. The cross-coupled transconductance circuits may act to reduce the internal resistance of the differential circuit to increase the quality factor of the differential circuit. The cross-coupled transconductance circuit may be connected at differential points along the differential circuit and be engaged and disengaged to linearize the quality factor of the differential circuit.
摘要翻译：一种系统包括差分电路，多个交叉耦合跨导电路。在一些实施方案中，差分电路可以包括平衡 - 不平衡转换器或变压器中的电感线圈。交叉耦合跨导电路可以用于降低差分电路的内部电阻以增加差分电路的品质因数。交叉耦合跨导电路可以沿着差分电路在差分点处连接并被接合和分离以使差分电路的品质因数线性化。

4. 发明授权

US09231541B2 Analog circuits having improved transistors, and methods therefor 有权
公开(公告)号：US09231541B2
公开(公告)日：2016-01-05
申请号：US14500236
申请日：2014-09-29
申请人： SuVolta, Inc.
发明人： Lawerence T. Clark , Scott E. Thompson
IPC分类号： H03F3/45
CPC分类号： H03F3/45179 , H03F3/45 , H03F3/45071 , H03F3/45183 , H03F3/45273 , H03F2200/375 , H03F2203/45344 , H03F2203/45454 , H03F2203/45506 , H03F2203/45674 , H03F2203/45676
摘要： Circuits are disclosed that may include a plurality of transistors having controllable current paths coupled between at least a first and second node, the transistors configured to generate an analog electrical output signal in response to an analog input value; wherein at least one of the transistors has a deeply depleted channel formed below its gate that includes a substantially undoped channel region formed over a relatively highly doped screen layer formed over a doped body region.

5. 发明授权

US09124246B2 Baseband processing circuitry 有权
标题翻译：基带处理电路
公开(公告)号：US09124246B2
公开(公告)日：2015-09-01
申请号：US14037116
申请日：2013-09-25
申请人： QUALCOMM Incorporated
发明人： Li-Chung Chang , Bindu Gupta , Timothy Donald Gathman , Ibrahim Ramez Chamas
IPC分类号： H03F3/45 , H03H11/04 , H03F1/02 , H03F1/08 , H03F1/22 , H03F3/193 , H03F3/72
CPC分类号： H03H11/0466 , H03F1/0277 , H03F1/08 , H03F1/223 , H03F3/193 , H03F3/45183 , H03F3/45475 , H03F3/45932 , H03F3/72 , H03F2200/06 , H03F2200/09 , H03F2200/165 , H03F2200/168 , H03F2200/171 , H03F2200/294 , H03F2200/336 , H03F2200/411 , H03F2200/429 , H03F2200/432 , H03F2200/534 , H03F2200/541 , H03F2200/543 , H03F2203/45352 , H03F2203/45396 , H03F2203/45506 , H03F2203/45511 , H03F2203/45512 , H03F2203/45516 , H03F2203/45521 , H03F2203/45522 , H03F2203/45526 , H03F2203/45528 , H03F2203/45594 , H03F2203/45618 , H03F2203/45702 , H03F2203/45728 , H03F2203/7215 , H03F2203/7221 , H03F2203/7236 , H03H2210/021 , H03H2250/00
摘要： Techniques for designing baseband processing circuitry for radio IC's. In an aspect, techniques for differential-to-single-ended conversion in a baseband portion of the IC are disclosed to reduce the pin count and package size for RF IC's. In another aspect, the converter includes selectable narrowband and wideband amplifiers, wherein the wideband amplifiers may be implemented using transistor devices having smaller area than corresponding transistor devices of narrowband amplifiers. Further techniques for bypassing one or more elements, and for implementing a low-pass filter of the converter using an R-C filter network, are described.
摘要翻译：无线电IC基带处理电路设计技术。在一方面，公开了用于IC的基带部分中的差分到单端转换的技术，以减少RF IC的引脚数和封装尺寸。在另一方面，转换器包括可选择的窄带和宽带放大器，其中宽带放大器可以使用具有比窄带放大器的相应晶体管器件小的面积的晶体管器件来实现。描述了用于绕过一个或多个元件以及用于使用R-C滤波器网络来实现转换器的低通滤波器的进一步的技术。

6. 发明授权

US08847684B2 Analog circuits having improved transistors, and methods therefor 有权
标题翻译：具有改进的晶体管的模拟电路及其方法
公开(公告)号：US08847684B2
公开(公告)日：2014-09-30
申请号：US13770482
申请日：2013-02-19
申请人： Lawrence T. Clark , Scott E. Thompson
发明人： Lawrence T. Clark , Scott E. Thompson
IPC分类号： H03F3/45
CPC分类号： H03F3/45179 , H03F3/45 , H03F3/45071 , H03F3/45183 , H03F3/45273 , H03F2200/375 , H03F2203/45344 , H03F2203/45454 , H03F2203/45506 , H03F2203/45674 , H03F2203/45676
摘要： Circuits are disclosed that may include a plurality of transistors having controllable current paths coupled between at least a first and second node, the transistors configured to generate an analog electrical output signal in response to an analog input value; wherein at least one of the transistors has a deeply depleted channel formed below its gate that includes a substantially undoped channel region formed over a relatively highly doped screen layer formed over a doped body region.
摘要翻译：公开了可以包括多个具有耦合在至少第一和第二节点之间的可控电流路径的晶体管的晶体管，其被配置为响应于模拟输入值产生模拟电输出信号; 其中所述晶体管中的至少一个具有在其栅极下方形成的深耗尽沟道，其包括在掺杂体区域上形成的相对高掺杂的屏蔽层上形成的基本上未掺杂的沟道区。

7. 发明授权

US08581631B2 Sense amplifier and electronic apparatus using the same 有权
公开(公告)号：US08581631B2
公开(公告)日：2013-11-12
申请号：US13677351
申请日：2012-11-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yutaka Shionoiri , Kiyoshi Kato , Munehiro Azami
IPC分类号： G01R19/00
CPC分类号： H03F3/45179 , G01R19/00 , G11C7/062 , G11C11/4091 , G11C11/413 , G11C2207/063 , H03F3/45183 , H03F3/45188 , H03F2203/45396 , H03F2203/45506 , H03F2203/45546 , H03F2203/45551 , H03F2203/45702 , H03F2203/45726
摘要： A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.

8. 发明申请

US20120249247A1 Front-End Circuit of Low Supply-Voltage Memory Interface Receiver 有权
标题翻译：低电源电压存储器接口接收器的前端电路
公开(公告)号：US20120249247A1
公开(公告)日：2012-10-04
申请号：US13077600
申请日：2011-03-31
申请人： Ying-Yu Hsu
发明人： Ying-Yu Hsu
IPC分类号： H03F3/04
CPC分类号： H03F3/45179 , H03F2203/45506 , H03F2203/45646
摘要： A circuit includes a reference voltage generator configured to generate a first reference voltage and a second reference voltage, wherein the first reference voltage is higher than a half of a positive power supply voltage, and the second reference voltage is lower than the half of the positive power supply voltage. An n-type differential amplifier includes a first and a second NMOS transistor, wherein a gate of the first NMOS transistor is coupled to an input node, and a gate of the second NMOS transistor is configured to receive the first reference voltage. A p-type differential amplifier is operated by the positive supply voltage and includes a first and a second PMOS transistor. A gate of the first PMOS transistor is coupled to the input node, and a gate of the second PMOS transistor is configured to receive the second reference voltage.
摘要翻译：电路包括：参考电压发生器，被配置为产生第一参考电压和第二参考电压，其中所述第一参考电压高于正电源电压的一半，并且所述第二参考电压低于所述正电压的一半电源电压。 n型差分放大器包括第一和第二NMOS晶体管，其中第一NMOS晶体管的栅极耦合到输入节点，并且第二NMOS晶体管的栅极被配置为接收第一参考电压。 p型差分放大器由正电源电压工作，并且包括第一和第二PMOS晶体管。第一PMOS晶体管的栅极耦合到输入节点，并且第二PMOS晶体管的栅极被配置为接收第二参考电压。

9. 发明申请

US20120133437A1 SENSE AMPLIFIER AND ELECTRONIC APPARATUS USING THE SAME 有权
标题翻译：使用相同的感应放大器和电子设备
公开(公告)号：US20120133437A1
公开(公告)日：2012-05-31
申请号：US13367397
申请日：2012-02-07
申请人： Yutaka Shionoiri , Kiyoshi Kato , Munehiro Azami
发明人： Yutaka Shionoiri , Kiyoshi Kato , Munehiro Azami
IPC分类号： H03F3/45
CPC分类号： H03F3/45179 , G01R19/00 , G11C7/062 , G11C11/4091 , G11C11/413 , G11C2207/063 , H03F3/45183 , H03F3/45188 , H03F2203/45396 , H03F2203/45506 , H03F2203/45546 , H03F2203/45551 , H03F2203/45702 , H03F2203/45726
摘要： A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.
摘要翻译：根据本发明的用于检测输入到第一输入端和第二输入端的信号的电位差的读出放大器包括：第一装置，用于将对应于第一和第二晶体管的阈值电压的电压施加到栅极源电压第一和第二晶体管，以及用于将输入到第一和第二输入端的信号传送到第一和第二晶体管的栅极的第二装置。在这种情况下，校正第一和第二晶体管的阈值变化。

10. 发明申请

US20120007664A1 APPARATUS AND METHOD FOR RECOVERY OF WASTED POWER FROM DIFFERENTIAL DRIVERS 有权
标题翻译：从差异驱动器恢复废弃电力的装置和方法
公开(公告)号：US20120007664A1
公开(公告)日：2012-01-12
申请号：US13237779
申请日：2011-09-20
申请人： Hongwu Chi
发明人： Hongwu Chi
IPC分类号： G05F1/10
CPC分类号： H04L25/0264 , H03F3/45183 , H03F2203/45008 , H03F2203/45466 , H03F2203/45506 , H03F2203/45654 , H03F2203/45696 , H03K19/0019 , H04L25/0272 , H04L25/028
摘要： An apparatus and method for supplying power to circuits of an integrated circuit (IC) from the wasted power in low-swing high-speed differential line drivers used in the IC, is disclosed. In a high speed line driver the load resistors of the driver are connected to a power supply, either the local power supply or the receiver power supply. DC power for the driver is supplied through these resistors. A large portion of this power, supplied from the power supply is wasted in the DC set-up circuit of the differential line driver. It is proposed to use this wasted power to power selected circuits of an IC. The use of this wasted power from the drivers for powering the circuits reduces the overall power dissipation of the system.
摘要翻译：公开了一种用于在IC中使用的低挥发性高速差分线路驱动器中从浪费的电力向集成电路（IC）的电路供电的装置和方法。在高速线路驱动器中，驱动器的负载电阻连接到电源，本地电源或接收器电源。通过这些电阻提供驱动器的直流电源。从电源供应的大部分功率被浪费在差分线路驱动器的DC设置电路中。建议使用这种浪费的功率为IC的所选电路供电。使用来自驱动器的这种浪费的功率为电路供电，降低了系统的总功耗。

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