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1. 发明申请

US20210032774A1 QUASI-SINGLE-CRYSTAL FILM AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20210032774A1
公开(公告)日：2021-02-04
申请号：US16939566
申请日：2020-07-27
申请人： NATIONAL CHIAO TUNG UNIVERSITY
发明人： CHIH CHEN , YU-JIN LI
IPC分类号： C30B29/66 , C30B29/02 , C30B29/68 , C30B1/00
摘要： A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of and on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.

2. 发明授权

US10409138B2 Nonlinear optical material and methods of fabrication 有权
公开(公告)号：US10409138B2
公开(公告)日：2019-09-10
申请号：US16357640
申请日：2019-03-19
申请人： University of Houston System
发明人： P. Shiv Halasyamani , Hongwei Yu
IPC分类号： G02F1/355 , G02F1/37 , G02F1/35 , C30B29/10 , C30B17/00 , C30B1/00 , H01S5/00
摘要： Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.

3. 发明授权

US10281796B2 Nonlinear optical material and methods of fabrication 有权
公开(公告)号：US10281796B2
公开(公告)日：2019-05-07
申请号：US16120366
申请日：2018-09-03
申请人： University of Houston System
发明人： P. Shiv Halasyamani , Hongwei Yu
IPC分类号： G02F1/355 , C30B1/00 , C30B17/00 , C30B29/10 , G02F1/35 , G02F1/37 , H01S5/00
摘要： Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.

4. 发明申请

US20180066376A1 BULK NANOFABRICATION WITH SINGLE ATOMIC PLANE PRECISION VIA ATOMIC-LEVEL SCULPTING OF CRYSTALLINE OXIDES 审中-公开
公开(公告)号：US20180066376A1
公开(公告)日：2018-03-08
申请号：US15697541
申请日：2017-09-07
申请人： UT-Battelle, LLC
发明人： Albina Y. Borisevich , Stephen Jesse , Sergei V. Kalinin , Andrew R. Lupini , Raymond R. Unocic , Qian He
IPC分类号： C30B1/00 , H01J37/317 , H01J37/30 , C30B29/32 , C30B19/10 , C30B29/02
CPC分类号： C30B1/00 , C30B19/10 , C30B29/02 , C30B29/16 , C30B29/32 , C30B30/00 , H01J37/3005 , H01J37/3174 , H01J2237/31747
摘要： A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.

5. 发明授权

US09649593B2 Epitaxial thin film solid crystal electrolyte including lithium 有权
公开(公告)号：US09649593B2
公开(公告)日：2017-05-16
申请号：US14365755
申请日：2012-11-05
申请人： Sony Corporation
发明人： Hiromichi Ohta , Noriyuki Aoki
IPC分类号： H01M8/1246 , B01D53/32 , C01B33/12 , C30B29/32 , H01G11/56 , H01M10/0525 , H01M10/0562 , H01M10/0585 , C30B1/00 , H01B1/12 , B01D61/44 , C25B13/04 , C30B23/06 , C30B25/02 , H01G9/15 , H01M10/052 , C30B29/22 , C30B29/30 , H01G11/06 , H01M8/1016
CPC分类号： B01D53/326 , B01D61/44 , C01B33/12 , C25B13/04 , C30B1/00 , C30B23/066 , C30B25/02 , C30B29/22 , C30B29/30 , C30B29/32 , H01B1/122 , H01G9/15 , H01G11/06 , H01G11/56 , H01M8/1016 , H01M8/1246 , H01M10/052 , H01M10/0525 , H01M10/0562 , H01M10/0585 , H01M2300/0068 , H01M2300/0071 , Y02E60/13 , Y02E60/525 , Y02P70/54 , Y02P70/56 , Y02T10/7011 , Y02T10/7022
摘要： Provided is a solid electrolyte including an epitaxial thin film crystal made of an electrolyte containing at least lithium.

6. 发明授权

US08557040B2 Systems and methods for preparation of epitaxially textured thick films 失效
标题翻译：用于制备外延织构化厚膜的系统和方法
公开(公告)号：US08557040B2
公开(公告)日：2013-10-15
申请号：US12275727
申请日：2008-11-21
申请人： James S. Im
发明人： James S. Im
IPC分类号： C30B1/00 , C30B3/00 , C30B5/00 , C30B28/02
CPC分类号： H01L21/3221 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02609 , H01L21/02686 , H01L31/0236 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.
摘要翻译：所公开的主题涉及使用薄膜的激光结晶来产生外延纹理的结晶厚膜。在一个或多个实施方案中，制备厚晶体膜的方法包括在基底上提供用于结晶的膜，其中至少一部分基底对激光照射基本上是透明的，所述膜包括具有主要表面结晶学的种子层方向; 以及设置在种子层上方的顶层; 使用脉冲激光从所述基板的背面照射所述膜，以在所述顶层的第二部分保持固体的同时在与所述种子层的界面处熔化所述顶层的第一部分; 并重新固化顶层的第一部分以形成用籽晶层外延的晶体激光，从而释放热量以熔化顶层的相邻部分。

7. 发明申请

US20110026103A1 CRYSTAL FOR OPTICAL CONVERSION 有权
标题翻译：光学转换晶体
公开(公告)号：US20110026103A1
公开(公告)日：2011-02-03
申请号：US12933436
申请日：2009-03-25
申请人： Haim Suchowski , Yaron Silberberg
发明人： Haim Suchowski , Yaron Silberberg
IPC分类号： G02F1/355 , C30B1/00 , C30B11/00 , C30B23/00 , C30B25/00 , C30B15/00
CPC分类号： G02F1/3558 , G02F1/3534 , G02F2001/3548 , H01S3/109
摘要： An efficient broadband crystal for wavelength conversion, the crystal being a quasi-phase matched non-linear crystal, having an aperiodic poled structure, each period being tuned, and wherein said tuning varies adiabatically along a length of said crystal from a first end wherein said tuning is a strong negative mismatch to a second end wherein said tuning is a strong positive mismatch or vice versa. The crystal is able to provide efficient wavelength conversion over a range of frequencies.
摘要翻译：一种用于波长转换的有效宽带晶体，所述晶体是准相位匹配非线性晶体，具有非周期极化结构，每个周期被调谐，并且其中所述调谐从第一端沿所述晶体的长度绝热变化，其中所述调谐是与第二端的强负的不匹配，其中所述调谐是强正偏差或反之亦然。晶体能够在一定范围的频率上提供有效的波长转换。

8. 发明授权

US07566669B2 Laser irradiation apparatus and laser irradiation method 有权
标题翻译：激光照射装置和激光照射方法
公开(公告)号：US07566669B2
公开(公告)日：2009-07-28
申请号：US10584472
申请日：2005-06-15
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , C30B1/00 , B23K26/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L27/1285
摘要： It is an object of the present invention to provide a laser irradiation apparatus which can manufacture a homogenously crystallized film by varying the energy intensity of an irradiation beam in forward and backward directions of the irradiation. A laser irradiation apparatus of the present invention comprises a laser oscillator and means for varying beam intensity wherein a laser beam is obliquely incident into the irradiation surface, the laser beam is scanned relative to the irradiation surface, and the beam intensity is varied in accordance with the scanning direction. Further, the laser oscillator is a continuous wave solid-state laser, gas laser, or metal laser. A pulsed laser having a repetition frequency of 10 MHz or more can also be used.
摘要翻译：本发明的目的是提供一种能够通过改变照射光束在照射的前后方向上的能量强度来制造均质结晶膜的激光照射装置。本发明的激光照射装置包括激光振荡器和用于改变光束强度的装置，其中激光束倾斜地入射到照射表面中，激光束相对于照射表面被扫描，并且光束强度根据扫描方向。此外，激光振荡器是连续波固体激光器，气体激光器或金属激光器。也可以使用重复频率为10MHz以上的脉冲激光。

9. 发明授权

US07507288B1 Highly anisotropic ceramic thermal barrier coating materials and related composites 失效
标题翻译：高度各向异性陶瓷热障涂层材料及相关复合材料
公开(公告)号：US07507288B1
公开(公告)日：2009-03-24
申请号：US11504163
申请日：2006-08-15
申请人： Sankar Sambasivan , Kimberly Steiner
发明人： Sankar Sambasivan , Kimberly Steiner
IPC分类号： C30B1/00 , C30B1/02
CPC分类号： C23C4/02 , C23C4/11 , C23C30/00 , Y10T428/12611
摘要： High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch.
摘要翻译：高温复合材料和热障涂层及相关方法，采用各向异性陶瓷材料，可以进行改性，以减少基体的热失配。

10. 发明申请

US20080237809A1 METHOD OF FABRICATING HYBRID ORIENTATION SUBSTRATE AND STRUCTURE OF THE SAME 有权
标题翻译：混合定向衬底的制造方法及其结构
公开(公告)号：US20080237809A1
公开(公告)日：2008-10-02
申请号：US11693455
申请日：2007-03-29
申请人： Yao-Tsung Huang , Chien-Ting Lin , Che-Hua Hsu , Guang-Hwa Ma
发明人： Yao-Tsung Huang , Chien-Ting Lin , Che-Hua Hsu , Guang-Hwa Ma
IPC分类号： H01L29/06 , C30B1/00
CPC分类号： H01L29/045 , C30B1/023 , C30B29/06 , C30B33/00 , H01L21/02532 , H01L21/02609 , H01L21/26506 , H01L21/823807 , H01L21/823878 , H01L29/7847
摘要： A method of fabricating a hybrid orientation substrate is described. A silicon substrate with a first orientation having a silicon layer with a second orientation directly thereon is provided, and then a stress layer is formed on the silicon layer. A trench is formed between a first portion and a second portion of the silicon layer through the stress layer and into the substrate. The first portion of the silicon layer is amorphized. A SPE process is performed to recrystallize the amorphized first portion of the silicon layer to be a recrystallized layer with the first orientation. An annealing process is performed at a temperature lower than 1200° C. to convert a surface layer of the second portion of the silicon layer to a strained layer. The trench is filled with an insulating material after the SPE process or the annealing process, and the stress layer is removed.
摘要翻译：描述了制造混合取向衬底的方法。提供具有第一取向的硅衬底，其具有直接在其上的第二取向的硅层，然后在硅层上形成应力层。在硅层的第一部分和第二部分之间通过应力层形成沟槽并进入衬底。硅层的第一部分是非晶化的。进行SPE工艺，以将第一取向的硅层的非晶化第一部分重结晶为再结晶层。在低于1200℃的温度下进行退火处理，以将硅层的第二部分的表面层转变成应变层。在SPE工艺或退火工艺之后，沟槽中填充有绝缘材料，应力层被去除。

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