触杀剂相关的专利数据

序号	专利名	申请号	申请日	公开（公告）号	公开（公告）日	发明人
61	전염성 세균 살멸기	KR1020010039188	2001-06-30	KR1020030003440A	2003-01-10	김정근
PURPOSE: A contagious bacteria sterilizer is provided to selectively destroy only pathogen using the unique characteristics of mica with superior far infrared rays than other minerals. CONSTITUTION: Mica(S) has the characteristic of emitting specific, strong far infrared rays(L) when heated. The far infrared rays(L) are applied to the size of pathogen(D) and an energy tens or hundreds of times larger than that of the vicinity is irradiated to the pathogen(D). Thus, the pathogen(D) resonates at the same wavelength as the energy and therefore generates heat of higher temperature than normal times. The pathogen(D) with the increased temperature becomes an abiotic state or dies. The remaining pathogen(D) is finally eliminated through active oxygen.
62	Non-contact type fungicide composition	JP2007312040	2007-12-03	JP2009132665A	2009-06-18	FUJII YUKIKO; ISHIKAWA AKIRA
<P>PROBLEM TO BE SOLVED: To provide a non-contact type fungicide composition exhibiting an excellent fungicidal performance without making contact with a material to be protected from fungi, and also maintaining a good scent tone without jointly using a deodorant, etc. <P>SOLUTION: This non-contact type antifungal composition contains the following components (a) and (b), and the fungicide composition package is obtained by housing the composition into a container. (a): At least 1 kind selected from compounds expressed by formula: R<SP>1</SP>-O(AO)<SB>n</SB>(1) [wherein, R<SP>1</SP>is a 6-11C alkyl; A is a 2-3C alkylene; (n) is a number of 1 to 3, which shows the mean number of moles of addition; and nAs are each the same or different, provided that ethylene glycol monohexyl ether is excluded]. (b) At least 1 kind selected from perfume ingredients having ≥170 and ≤280°C boiling point and ≥1 and ≤4 logP value, and also having any one of hydroxy or aldehyde group. <P>COPYRIGHT: (C)2009,JPO&INPIT
63	Non-contact type fungicide composition	JP2007312039	2007-12-03	JP2009132664A	2009-06-18	FUJII YUKIKO; ISHIKAWA AKIRA
<P>PROBLEM TO BE SOLVED: To provide a non-contact type fungicide composition exhibiting an excellent fungicidal effect without making direct contact with a material to be protected from fungi even in normal temperatures. <P>SOLUTION: This non-contact type fungicide composition contains a compound expressed by general formula (1) and a fungicide composition package obtained by housing the non-contact type fungicide composition into a container is also provided. R<SP>1</SP>-O(PO)<SB>n</SB>H (1). [wherein, R<SP>1</SP>is a 6-11C alkyl; P is a 3C alkylene; (n) is a number of 1 to 3, which shows a mean number of moles of addition; and nPs are each the same or different]. <P>COPYRIGHT: (C)2009,JPO&INPIT
64	살리사이드 콘택 형성 방법	KR1020020042405	2002-07-19	KR1020040008731A	2004-01-31	김흥진
PURPOSE: A method for forming a salicide contact is provided to be capable of conserving predetermined leakage characteristic and considerably improving contact resistance by forming a salicide layer at a contact region alone. CONSTITUTION: After forming an isolation layer(32) and a well at a semiconductor substrate(31), a gate(34) is formed at the upper portion of the resultant structure. A gate spacer(35) is formed at both sidewalls of the gate. A source/drain region(36) is formed at both sides of the gate in the semiconductor substrate. After forming the first interlayer dielectric(37) on the entire surface of the resultant structure, the first contact hole is formed at the first interlayer dielectric by carrying out an etching process at a salicide layer forming region. After forming a contact hole spacer(38) made of an insulating layer at both sidewalls of the first contact hole, a metal layer is formed at the upper portion of the resultant structure. Then, the first annealing process is carried out at the resultant structure. A salicide layer(39) is formed at the lower portion of the first contact hole by carrying out the second annealing process.
65	Non-contact type fungicide composition	JP2007312041	2007-12-03	JP2009132666A	2009-06-18	FUJII YUKIKO; ISHIKAWA AKIRA
PROBLEM TO BE SOLVED: To provide a non-contact type fungicide composition exhibiting an excellent fungicidal effect without making contact with a material to be protected from fungi, and especially suitable to be used in a space for housing clothes. SOLUTION: This non-contact type fungicide contains a compound expressed by the following general formula (1) and a fungicide composition package obtained by housing the non-contact type fungicide composition in a container is also provided. R ¹-CH ₂OH (1) [wherein, R ¹ is a 5-10C branched saturated aliphatic hydrocarbon group]. COPYRIGHT: (C)2009,JPO&INPIT
66	Animal contact insecticide applicator	US25656851	1951-11-15	US2688950A	1954-09-14	KENT MCKINLEY WADE

67	Organic contact insecticide and its use	US24193638	1938-11-23	US2283471A	1942-05-19	WILLIAM SWAINE JAMES

68	Bactericidal contact lens solution	US3755561D	1971-03-22	US3755561A	1973-08-28	RANKIN B
A COMPOSITION IS PROVIDED FOR EMPLOYMENT WITH GELTYPE CONTACT LENSES, WHICH CONTAINS NO COMPONENT WHICH WILL BECOME ENTRAINED IN THE LATTICE OF THE GEL, AND YET PROVIDES A DURABEL BACTERICIDAL ACTION FOR THE LENS AND IS COMPATIBLE WITH OCULAR TISSUES. THE COMPOSITION COMPRISES AN AQUEOUS SOLUTION OF POLYVINYL PYRROLIDONE AND A POLYALKALENE GLYCOL PLASTICIZING HUMECTANT AND UP TO ABOUT 1 PART 50,000, PREFERABLE NOT MORE THAN ABOUT 1 PART IN 100,000 OF THIMEROSAL.
69	컨택홀과 살리사이드를 동시에 형성하는 방법	KR1020020087386	2002-12-30	KR1020040060579A	2004-07-06	김태우
PURPOSE: A method is provided to simplify manufacturing process by simultaneously forming a contact hole and a titanium salicide layer without using an additional process. CONSTITUTION: A substrate(100) having a desired transistor structure with a gate electrode(104) is prepared. An interlayer dielectric(110) is formed on the resultant structure. By selectively etching the interlayer dielectric, contact holes are formed to expose the gate electrode and an active region of the substrate. A titanium film is formed on the exposed resultant structure and annealed, thereby forming simultaneously a titanium salicide layer(108) on the gate electrode and the active region.
70	반도체 소자 제조시 자기정렬 샐리사이드 콘텍홀 형성방법	KR1020020057006	2002-09-18	KR1020040025165A	2004-03-24	김재영
PURPOSE: A method for forming a self-aligned salicide contact hole of a semiconductor device is provided to prevent short between a gate and a source/drain by using different etch selectivity of a nitride spacer and a PMD oxide layer. CONSTITUTION: A gate including the first polysilicon layer(304), an oxide layer and the second polysilicon layer is formed on a substrate. The first nitride spacer(314) is formed at both sidewalls of the gate. The second polysilicon layer is etched by using the oxide layer as an etch stopper. The oxide layer is removed, and a silicide layer(316) is formed on a source/drain region and the gate polysilicon layer by salicide processing. The second nitride spacer(318) is formed at both sidewalls of the first nitride spacer. Then, a PMD(Polysilicon to Metal Dielectric) oxide layer(320) is formed on the resultant structure. A contact hole(322) is then formed.
71	METHOD FOR PRODUCING SALICIDE AND A CARBON NANOTUBE METAL CONTACT	US14180417	2014-02-14	US20150235958A1	2015-08-20	YU-HUNG LIN; CHING-FU YEH; CHIH-WEI CHANG
A method for producing a metal contact in a semiconductor device is disclosed. The method comprises depositing a catalyst layer in a via hole, forming a catalyst from the deposited catalyst layer, and growing a carbon nanotube structure above the catalyst in the via hole. The method further comprises forming salicide from the catalyst, applying a chemical mechanical polishing (CMP) process to the carbon nanotube structure to remove top layers of catalyst and nanotube material, and depositing metal material above the carbon nanotube structure. Growing a carbon nanotube structure comprises absorbing a precursor on a surface of the catalyst formed in the via hole, forming a metal-carbon alloy from the catalyst and the precursor, and growing a carbon nanotube structure vertically from the via bottom. The carbon nanotube structure comprises a plurality of carbon nanotubes wherein the diameters of the carbon nanotubes are limited by the catalyst size.
72	삼옥심에테르 유도체 및 추가의 살진균제 기재의 살진균성혼합물	KR1020007010572	1999-03-22	KR1020010034648A	2001-04-25	쉘베르거,클라우스; 그로테,토마스; 자우터,후베르트; 아메르만,에베르하르트; 로렌츠,기젤라; 스트라트만,지크프리트
본 발명은 활성 성분으로서 a) 하기 화학식 I (식 중, 치환체 및 지수는 발명의 상세한 설명에 언급된 의미를 가짐)의 페닐아세트산 유도체 및 그의 염및 b) 하기 화학식 II 내지 화학식 V의 화합물 중 1 종 이상을 상승작용 유효량으로 포함하는 살진균제 혼합물에 관한 것이다. ＜화학식 I＞＜화학식 II＞＜화학식 III＞＜화학식 IV＞＜화학식 V＞ 상기 식들에서, 치환기들은 각각 본원에 정의된 바와 같다.
73	부분적으로 셀프 얼라인 된 살리사이드 콘택 형성 방법	KR1020020042404	2002-07-19	KR1020040008730A	2004-01-31	김흥진
PURPOSE: A method for forming a partial self-aligned salicide contact is provided to be capable of conserving leakage characteristic and improving contact resistance characteristic by selectively forming a silicide layer at a contact region alone. CONSTITUTION: A gate electrode(34) is formed at the upper portion of a silicon substrate(31). An LDD(Lightly Doped Drain) spacer(35) is formed at both sidewalls of the gate electrode. After forming a source/drain region(36) at both sides of the gate electrode in the silicon substrate, the first interlayer dielectric(37) is formed on the entire surface of the resultant structure. The first contact hole is formed at the first interlayer dielectric. After forming a metal layer at the upper portion of the resultant structure, the first annealing process is carried out at the resultant structure. After removing the metal layer, a salicide layer(38) is formed at the predetermined portion of the resultant structure by carrying out a second annealing process. Then, the second interlayer dielectric(39) is formed on the entire surface of the resultant structure.
74	Insecticide Resistance Diagnosis-kit which Using Residual Contact Method	KR20070105315	2007-10-19	KR100916894B1	2009-09-09
본 발명은 살충제에 대한 해충의 약제 저항성을 손쉽게 측정할 수 있는 진단키트 및 이를 이용한 진단방법에 관한 것으로, 특히 본 발명에서는 휴대가 간편하여 야외에서도 대상 살충제에 대한 저항성 및 감수성을 누구나 간편하고 정확하게 측정할 수 있는 진단키트를 제공하고자 한다. 본 발명의 살충제 저항성 진단키트는 잔류접촉법(residual contact method)을 이용한 것으로서, 살충제를 휘발성 용매에 녹이고 일정량을 바이엘에 투입한 후 회전 및 교반시켜 살충제 성분이 바이엘 내벽에 골고루 도포되어 있으며, 바이엘마다 처리된 약량이 일정하다. 상기 본 발명에 의한 살충제 저항성 검정키트를 이용하면, 포장에서의 살충제 저항성을 간편하고 정확하게 측정할 수 있어 약효가 우수한 약제를 선발 및 처리함으로써 효과적인 해충 방제를 할 수 있다. 또한, 무분별한 농약의 오용을 막아 결과적으로 저농약 농산물을 생산하는 효과가 있다. 살충제, 해충, 저항성, 진단키트, 잔류접촉법
75	DEVICE FOR PACKAGING AND TREATING BACTERICIDE FOR CONTACT LENSES	PCT/FR1999/000858	1999-04-13	WO99052568A1	1999-10-21
The invention concerns a device for packaging and treating bactericide for contact lenses (L) characterised in that it comprises: a housing (1) provided with at least one cavity (10) wherein is housed a support element (11) having bactericidal activity whereof the outer surface (11a) has a curvature adapted to that of the lenses; and at least a cover (2) for covering said cavity (10) and whereof the inner surface is provided with at least an insert (20) capable of being engaged in guided manner into the cavity (10) and wherein is housed a wedge element (21) having bactericidal activity whereof the outer surface (21a) has a curvature matching that of the support element (11) so as to ensure the lens (L) protection and/or decontamination by blocking it in said cavity (10) between said support element (11) and said wedge element (21).
76	Trigger-activated insecticide applicator with extended nozzle	US09512932	2000-02-25	US06325304B1	2001-12-04	Alan D. Brite; Terry Brite
A liquid insecticide applicator in the form of a trigger pump having a detachable, semirigid, tubular extended nozzle press fit into a recess within a nipple along the discharge end of the pump assembly is provided. When the extended nozzle is engaged to the pump assembly, the applicator is suitable for applying or injecting insecticides such as solutions of containing disodium octaborate tetrahydrate (D.O.T.) into holes or wall voids. When the extended nozzle is disengaged from the pump assembly, the applicator can deliver contents in a spray, suitable for treating larger surfaces, such as large areas of exposed wood. Preferably, the liquid insecticide solution used with the applicator is a 5% to 20% water solution of a DOT mixture comprising disodium octaborate tetrahydrate, colored pigment, and a bittering agent of either sucrose octa-acetate or denatonium benzoate. The applicator may alternatively be used to deliver liquid fertilizer to a plant by injecting the fertilizer below the soil surface, closer to the root structure of the plant.
77	Method of integrating a salicide process and a self-aligned contact process	US09850305	2001-05-07	US06383878B1	2002-05-07	Shui-Chin Huang
A method of integrating salicide process and self-aligned contact process is performed on a semiconductor substrate on which a plurality of doped gate electrodes and source/drain regions are formed in both a memory device area and a peripheral area. An oxide layer is formed on the exposed surface, and then a plurality of spacers is formed on the sidewalls of the gate electrodes respectively. Sequentially, a barrier layer and a buffering layer are formed on the exposed surface. Next, the buffering layer and the barrier layer are removed from the top of the gate electrodes to expose the oxide layer. The exposed oxide layer and the underlying gate electrodes are then removed until the gate electrode reaches a predetermined height. The salicide process is performed to form a silicide on the exposed surface of the gate electrodes and simultaneously on the source/drain regions in the periphery area. Next, a gate cap layer is formed on the silicide overlying the gate electrodes. After forming an inter-layer dielectric on the exposed surface, the self-aligned contact process is performed to form a contact hole to expose the source/drain region positioned between adjacent gate electrodes in the memory device area.
78	반도체 소자의 게이트 전극 및 샐리사이드 콘택 형성 방법	KR1019990013040	1999-04-13	KR1020000066158A	2000-11-15	김서원
PURPOSE: A method for manufacturing a gate electrode and a salicide contact of a semiconductor device is provided to prevent a gate electrode from being deteriorated and to reduce Schottky resistance of a contact part, by uniformly forming a cobalt silicide layer. CONSTITUTION: After a gate electrode is made of a gate oxidation layer(3) and amorphous silicon(11) on a silicon wafer(1) in which an isolation region is defined, the silicon wafer is thermally oxidized to form a sacrificial oxidation layer on an outer wall of the gate electrode and on the silicon wafer. A sidewall spacer is formed on a sidewall of the gate electrode, and the silicon wafer is wet-cleaned to eliminate the sacrificial oxidation layer on the gate electrode and an exposed silicon wafer. An amorphous silicon layer doped with p-type or n-type dopants is evaporated on the gate electrode and exposed silicon wafer by an ultra high vacuum(UHV) chemical vapor deposition(CVD) method. Cobalt is sputtered on the silicon wafer. The silicon wafer is rapid thermal processed to form a cobalt silicide layer while a gate electrode and a source/drain region are formed by diffusing and activating the dopants doped into the amorphous silicon layer.
79	반도체 소자의 게이트 전극 및 샐리사이드 콘택 형성 방법	KR1019990013040	1999-04-13	KR100315451B1	2001-11-28	김서원
반도체소자의게이트전극열화를방지함과동시에코발트실리사이드를균일하게형성하기위하여, 소자분리영역이정의된실리콘웨이퍼에게이트산화막과비정질실리콘으로게이트전극을형성한후, 실리콘웨이퍼를열산화하여게이트전극외벽및 실리콘웨이퍼표면에희생산화막을형성한다. 그리고, 게이트측벽스페이서를형성하고, 실리콘웨이퍼를습식세정하여게이트전극상부및 드러난실리콘웨이퍼상부의희생산화막을제거한다. 이후, UHV 화학기상증착으로게이트전극상부및 드러난실리콘웨이퍼상부에 P형또는 N형도펀트가도핑된비정질실리콘을증착한후, 스퍼터링에의해실리콘웨이퍼전면에코발트층을형성하고, 급속열처리하여콘택샐리사이드를위한코발트실리사이드를형성함과동시에비정질실리콘에도핑된도펀트의확산및 활성화에의해게이트전극및 소스/드레인을형성한다. 따라서, 게이트전극을그레인바운드리가없는비정질실리콘으로형성함으로써게이트전극에가해지는전계가균일하게되어게이트열화를방지할수 있으며, 비정질실리콘과코발트의계면반응에의해코발트실리사이드를형성하므로균일한실리사이드를형성할수 있다.
80	SALICIDE PROTECTION DURING CONTACT METALLIZATION AND RESULTING SEMICONDUCTOR STRUCTURES	US14146430	2014-01-02	US20150187945A1	2015-07-02	Vimal K. Kamineni; Ruilong Xie; Robert Miller
A semiconductor transistor has a structure including a semiconductor substrate, a source region, a drain region and a channel region in between the source region and the drain region. A gate is provided above the channel region. A silicon nitride protective layer is provided over the source region and the drain region, along with a silicon nitride cap over the gate region. The silicon nitride protective layer is configured to allow punch-through of the protective layer after source and drain openings are created, while preventing etching through the cap above the gate. The self-aligned source, drain and gate contacts are formed while protecting the source and drain salicide using the silicon nitride protective layer and gate cap.

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