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91. 发明申请

US20120141667A1 METHODS FOR FORMING BARRIER/SEED LAYERS FOR COPPER INTERCONNECT STRUCTURES 审中-公开
标题翻译：用于形成用于铜互连结构的障碍物/种子层的方法
公开(公告)号：US20120141667A1
公开(公告)日：2012-06-07
申请号：US13315906
申请日：2011-12-09
申请人： HOON KIM , SANG HO YU , SESHADRI GANGULI
发明人： HOON KIM , SANG HO YU , SESHADRI GANGULI
IPC分类号： C23C16/06 , C25D5/02
CPC分类号： C25D5/02 , C23C14/046 , C23C14/185 , C23C16/045 , C23C16/06 , H01L21/76843 , H01L21/76873
摘要： Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and the bottom surface of the opening, the layer having a first surface adjacent to the sidewall and bottom surface of the opening and a second surface opposite the first surface, wherein the second surface comprises predominantly at least one of ruthenium (Ru) or cobalt (Co) and wherein a predominant quantity of manganese (Mn) in the layer is not disposed proximate the second surface; and depositing a conductive material on the layer to fill the opening.
摘要翻译：本文提供了用于形成用于互连结构的势垒/种子层的方法。在一些实施方案中，一种处理基材的方法，所述基材具有形成在基材的第一表面中的开口，所述开口具有侧壁和底部表面，所述方法可以包括形成包含锰（Mn）和至少一种钌的层（Ru）或钴（Co）在所述开口的侧壁和底表面上，所述层具有与所述开口的侧壁和底表面相邻的第一表面和与所述第一表面相对的第二表面，其中所述第二表面主要包括钌（Ru）或钴（Co）中的至少一种，并且其中该层中主要量的锰（Mn）不靠近第二表面设置; 以及在所述层上沉积导电材料以填充所述开口。

92. 发明授权

US07850779B2 Apparatus and process for plasma-enhanced atomic layer deposition 失效
标题翻译：等离子体增强原子层沉积的装置和工艺
公开(公告)号：US07850779B2
公开(公告)日：2010-12-14
申请号：US11556758
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
IPC分类号： C23C16/452 , H01L21/306
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，提供了一种用于在处理室内进行气相沉积工艺的盖组件，其包括绝缘盖和等离子体屏。在一个示例中，绝缘帽具有被配置为使第一处理气体从上表面流动到扩张通道的集中通道，以及构造成将第二处理气体从上表面流动到围绕扩展通道的凹槽的外通道。在一个示例中，等离子体屏幕具有包含具有多个孔的内部区域和具有多个狭槽的外部区域的上表面。绝缘帽可以位于等离子体屏幕的顶部，以形成具有扩展通道的集中气体区域和具有凹槽的圆形气体区域。

93. 发明申请

US20100102417A1 VAPOR DEPOSITION METHOD FOR TERNARY COMPOUNDS 审中-公开
标题翻译：三元化合物的蒸气沉积方法
公开(公告)号：US20100102417A1
公开(公告)日：2010-04-29
申请号：US12606444
申请日：2009-10-27
申请人： Seshadri Ganguli , Srinivas Gandikota , Sang Ho Yu , Luis Felipe Hakim
发明人： Seshadri Ganguli , Srinivas Gandikota , Sang Ho Yu , Luis Felipe Hakim
IPC分类号： H01L29/00 , C23C16/34 , C23C16/44
CPC分类号： C23C16/45531 , C23C16/34 , C23C16/45542 , H01L21/28088 , H01L21/28562 , H01L21/76843 , H01L21/76873 , H01L27/10873 , H01L28/60 , H01L29/4966 , H01L29/517 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/16
摘要： Embodiments provide a method for depositing or forming titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD). In some embodiments, a titanium aluminum nitride material is formed by sequentially exposing a substrate to a titanium precursor and a nitrogen plasma to form a titanium nitride layer, exposing the titanium nitride layer to a plasma treatment process, and exposing the titanium nitride layer to an aluminum precursor while depositing an aluminum layer thereon. The process may be repeated multiple times to deposit a plurality of titanium nitride and aluminum layers. Subsequently, the substrate may be annealed to form the titanium aluminum nitride material from the plurality of layers. In other embodiments, the titanium aluminum nitride material may be formed by sequentially exposing the substrate to the nitrogen plasma and a deposition gas which contains the titanium and aluminum precursors.
摘要翻译：实施例提供了在诸如原子层沉积（ALD）或等离子体增强ALD（PE-ALD）的气相沉积过程中沉积或形成氮化铝钛材料的方法。在一些实施例中，通过将衬底依次暴露于钛前体和氮等离子体以形成氮化钛层，将氮化钛层暴露于等离子体处理工艺，并将氮化钛层暴露于铝前体，同时在其上沉积铝层。该过程可以重复多次以沉积多个氮化钛和铝层。随后，可以将基板退火以从多个层形成氮化铝钛材料。在其它实施例中，氮化铝钛材料可以通过将衬底依次暴露于氮等离子体和包含钛和铝前体的沉积气体来形成。

94. 发明申请

US20100096085A1 PLASMA REACTOR WITH A CEILING ELECTRODE SUPPLY CONDUIT HAVING A SUCCESSION OF VOLTAGE DROP ELEMENTS 有权
标题翻译：具有带电压下降元件继电器的天花板电极管的等离子体反应器
公开(公告)号：US20100096085A1
公开(公告)日：2010-04-22
申请号：US12255492
申请日：2008-10-21
申请人： OLKAN CUVALCI , Yu Chang , William Kuang , Anqing Cui , Seshadri Ganguli
发明人： OLKAN CUVALCI , Yu Chang , William Kuang , Anqing Cui , Seshadri Ganguli
IPC分类号： C23F1/08 , C23C16/44
CPC分类号： H01J37/3244 , C23C16/455 , H01J37/32091 , H01J37/32541
摘要： A bridge assembly includes an electrically insulating hollow tube or bridge having a pair of ends, the bridge being supported at one of the ends over the cylindrical side wall and being supported at the other of the ends over the electrode. The bridge assembly further includes a set of conductive rings surrounding the hollow tube and spaced from one another along the length of the bridge, and plural electrically resistive elements. Each of the resistive elements has a pair of flexible connectors, respective ones the resistive elements connected at their flexible connectors between respective pairs of the rings to form a series resistor assembly.
摘要翻译：桥组件包括具有一对端部的电绝缘中空管或桥，所述桥被支撑在所述圆柱形侧壁上的一端，并且在所述电极的另一端支撑。桥接组件还包括围绕中空管并且沿着桥的长度彼此间隔开的一组导电环，以及多个电阻元件。每个电阻元件具有一对柔性连接器，相应的电阻元件在相应的成对环之间的柔性连接器处连接以形成串联电阻器组件。

95. 发明申请

US20100006167A1 CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD 有权
标题翻译：化学输送装置用于CVD或ALD
公开(公告)号：US20100006167A1
公开(公告)日：2010-01-14
申请号：US12500319
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K21/00
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.
摘要翻译：本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线在入口管线和出口管线之间。在一些实施例中，安瓿组件可以包含断开配件。在其他实施例中，第一旁路管线具有设置在其中的截止阀，以使入口管线和出口管线流体耦合或解耦。

96. 发明申请

US20090151633A1 METHOD AND APPARATUS FOR GENERATING A PRECURSOR FOR A SEMICONDUCTOR PROCESSING SYSTEM 有权
标题翻译：用于生成半导体加工系统的前驱体的方法和装置
公开(公告)号：US20090151633A1
公开(公告)日：2009-06-18
申请号：US12371138
申请日：2009-02-13
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C23C16/54
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.
摘要翻译：本文描述的实施例涉及用于产生半导体处理系统的前体的装置。在一个实施例中，描述了在气相沉积工艺期间产生前体气体的装置。该装置包括容纳盖和底部之间的内部容积的容器，设置在盖上的气体入口和气体出口，与底部相连并从内部容积的下部区域延伸到上部区域的多个筒仓，以及包含在罐的下部区域内的氯浓度为约5ppm以下的钽前体。

97. 发明申请

US20090004850A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS 审中-公开
标题翻译：用于形成钴和钴硅酸盐材料的方法在TUNGSTEN联系应用中
公开(公告)号：US20090004850A1
公开(公告)日：2009-01-01
申请号：US12111923
申请日：2008-04-29
申请人： SESHADRI GANGULI , SANG-HO YU , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
发明人： SESHADRI GANGULI , SANG-HO YU , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45523 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.
摘要翻译：本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。在一个实施例中，提供了一种用于在基板上形成含金属硅化物的材料的方法，其包括在气相沉积工艺期间在含硅表面上形成金属硅化物材料，通过在其上顺序地沉积多个金属硅化物层和甲硅烷基层衬底，在所述金属硅化物材料上沉积金属覆盖层，在退火过程期间加热所述衬底，以及在所述阻挡材料上沉积金属接触材料。在一个实例中，金属硅化物层和金属覆盖层都含有钴。钴硅化物材料可以含有约1.9或更大，例如大于约2.0，或约2.2或更大的硅/钴原子比。

98. 发明授权

US07270709B2 Method and apparatus of generating PDMAT precursor 有权
标题翻译：生成PDMAT前体的方法和装置
公开(公告)号：US07270709B2
公开(公告)日：2007-09-18
申请号：US11119681
申请日：2005-05-02
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B21/02
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.
摘要翻译：用于填充衬底中的特征的前体和方法。该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm杂质的五（二甲基氨基）钽形成。该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。前体通常包括具有小于约5ppm杂质的五（二甲基氨基）钽。在与加热元件耦合的罐中产生前体，其配置成减少杂质的形成。

99. 发明申请

US20070202254A1 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS 失效
标题翻译：形成含钴材料的方法
公开(公告)号：US20070202254A1
公开(公告)日：2007-08-30
申请号：US11733929
申请日：2007-04-11
申请人： SESHADRI GANGULI , SCHUBERT CHU , MEI CHANG , SANG-HO YU , KEVIN MORAES , SEE-ENG PHAN
发明人： SESHADRI GANGULI , SCHUBERT CHU , MEI CHANG , SANG-HO YU , KEVIN MORAES , SEE-ENG PHAN
IPC分类号： C23C16/00
CPC分类号： C23C16/42 , C23C16/18 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

100. 发明申请

US20070128862A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20070128862A1
公开(公告)日：2007-06-07
申请号：US11556756
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
IPC分类号： H01L21/44 , H01L23/34
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a showerhead assembly comprises a showerhead and a plasma baffle that are used to disperse process gases within a plasma-enhanced vapor deposition chamber. The showerhead plate comprises an inner area configured to position the plasma baffle therein and an outer area which has a plurality of holes for emitting a process gas. The plasma baffle comprises a conical nose disposed on an upper surface to receive another process gas, a lower surface to emit the process gas and a plurality of openings configured to flow the process gas from above the upper surface into a process region. The openings are preferably slots that are positioned at predetermined angle for emitting the process gas with a circular flow pattern.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，喷头组件包括用于在等离子体增强的气相沉积室内分散工艺气体的喷头和等离子体挡板。喷头板包括配置成将等离子体挡板定位在其中的内部区域和具有用于发射处理气体的多个孔的外部区域。等离子体挡板包括设置在上表面上以接收另一工艺气体的锥形鼻，用于发射处理气体的下表面和被配置为将工艺气体从上表面上流动到工艺区域中的多个开口。开口优选地以预定角度定位以用于以圆形流动图案发射处理气体的槽。

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