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11. 发明申请

US20090002701A1 Electric-field-enhancement structure and detection apparatus using same 有权
公开(公告)号：US20090002701A1
公开(公告)日：2009-01-01
申请号：US11823281
申请日：2007-06-26
申请人： David A. Fattal , Zhiyong Li , William M. Tong , Duncan Stewart , Jason Blackstock
发明人： David A. Fattal , Zhiyong Li , William M. Tong , Duncan Stewart , Jason Blackstock
IPC分类号： G01J3/44 , G02B6/34
CPC分类号： G02B6/1226 , B82Y15/00 , B82Y20/00 , G01N21/35 , G01N21/554 , G01N21/658 , G02B5/008
摘要： Various aspects of the present invention are directed to electric-field-enhancement structures and detection apparatuses that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure includes a substrate having a surface. The substrate is capable of supporting a planar mode having a planar-mode frequency. A plurality of nanofeatures is associated with the surface, and each of nanofeatures exhibits a localized-surface-plasmon mode having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.

12. 发明授权

US07466407B2 Photonic crystal Raman sensors and methods including the same 有权
标题翻译：光子晶体拉曼传感器和方法包括相同
公开(公告)号：US07466407B2
公开(公告)日：2008-12-16
申请号：US11413877
申请日：2006-04-27
申请人： Sean M. Spillane , Raymond G. Beausoleil , Zhiyong Li , Duncan Stewart
发明人： Sean M. Spillane , Raymond G. Beausoleil , Zhiyong Li , Duncan Stewart
IPC分类号： G01J3/44
CPC分类号： G01J3/44 , G01N21/658
摘要： Raman-enhancing structures include a photonic crystal having a resonant cavity and at least one waveguide coupled to the resonant cavity. A nanostructure comprising a Raman-enhancing material is disposed proximate the resonant cavity of the photonic crystal. Raman-enhancing structures include a microdisk resonator, at least one waveguide coupled to the microdisk resonator, and a nanostructure comprising a Raman-enhancing material disposed proximate the microdisk resonator. Methods for performing Raman spectroscopy include generating radiation, guiding the radiation through a waveguide to a resonant cavity in a photonic crystal or a microdisk resonator, resonating the radiation in the resonant cavity or microdisk resonator, providing an analyte proximate the resonant cavity or microdisk resonator, subjecting the analyte to the resonating radiation, and detecting Raman scattered radiation.
摘要翻译：拉曼增强结构包括具有谐振腔和耦合到谐振腔的至少一个波导的光子晶体。包含拉曼增强材料的纳米结构设置在光子晶体的谐振腔附近。拉曼增强结构包括微盘谐振器，耦合到微盘谐振器的至少一个波导和包括靠近微盘谐振器设置的拉曼增强材料的纳米结构。用于执行拉曼光谱的方法包括产生辐射，将辐射通过波导引导到光子晶体或微盘谐振器中的谐振腔，谐振谐振腔或微盘谐振器中的辐射，提供靠近谐振腔或微盘谐振器的分析物，对分析物进行共振辐射，并检测拉曼散射辐射。

13. 发明申请

US20080179736A1 Chip cooling channels formed in wafer bonding gap 有权
标题翻译：在晶片接合间隙中形成的芯片冷却通道
公开(公告)号：US20080179736A1
公开(公告)日：2008-07-31
申请号：US11701317
申请日：2007-01-31
申请人： Peter G. Hartwell , Duncan Stewart
发明人： Peter G. Hartwell , Duncan Stewart
IPC分类号： H01L23/34 , H01L21/00
CPC分类号： H01L23/473 , H01L25/0657 , H01L25/50 , H01L2225/06513 , H01L2225/06589 , H01L2924/0002 , H01L2924/00
摘要： One embodiment in accordance with the invention is a system that can include a first wafer and a second wafer. The first wafer and the second wafer can be bonded together by a wafer bonding process that forms a gap between the first wafer and the second wafer. The gap can be configured for receiving a heat extracting material.
摘要翻译：根据本发明的一个实施例是可以包括第一晶片和第二晶片的系统。可以通过在第一晶片和第二晶片之间形成间隙的晶片接合工艺将第一晶片和第二晶片接合在一起。间隙可以被配置为接收热提取材料。

14. 发明授权

US07256435B1 Multilevel imprint lithography 有权
标题翻译：多层压印光刻
公开(公告)号：US07256435B1
公开(公告)日：2007-08-14
申请号：US10453329
申请日：2003-06-02
申请人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
发明人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
IPC分类号： H01L27/10
CPC分类号： H01L21/76838 , B81C99/009 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.
摘要翻译：提供具有突出图案的模具，其通过压印过程被压入薄聚合物膜。提供了纳米线和微丝之间的控制连接以及电子电路的其它光刻元件。打印印记被配置成形成大致平行的纳米线的阵列，其具有（1）X方向上的微尺寸，（2）在Y方向上的纳米尺寸和纳米间距，以及Z方向上的三个或更多个不同的高度。如此形成的印章可以用于将特定的单个纳米线连接到微细线或垫的特定微观区域。模具中的突出图案在薄聚合物膜中产生凹陷，因此聚合物层获得模具上图案的相反。在除去模具之后，处理膜，使得聚合物图案可以在基底上的金属/半导体图案上转印。

15. 发明申请

US20070117256A1 Control layer for a nanoscale electronic switching device 有权
标题翻译：用于纳米级电子开关器件的控制层
公开(公告)号：US20070117256A1
公开(公告)日：2007-05-24
申请号：US11287113
申请日：2005-11-23
申请人： Duncan Stewart , Douglas Ohlberg , R. Williams , Philip Kuekes
发明人： Duncan Stewart , Douglas Ohlberg , R. Williams , Philip Kuekes
IPC分类号： H01L29/02 , H01L51/40
CPC分类号： G11C13/0009 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/146 , H01L51/0591
摘要： A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.
摘要翻译：公开了一种用于纳米级电子开关器件的结的控制层。控制层包括与纳米级切换装置中的连接层和至少一个电极化学相容的材料。控制层适于在装置的操作期间控制电化学反应路径，电物理反应路径及其组合中的至少一个。

16. 发明申请

US20060097389A1 Nanowire interconnection and nano-scale device applications 失效
标题翻译：纳米线互连和纳米级器件应用
公开(公告)号：US20060097389A1
公开(公告)日：2006-05-11
申请号：US10982051
申请日：2004-11-05
申请人： M. Islam , Philip Kuekes , Shih-Yuan Wang , Duncan Stewart , Shashank Sharma
发明人： M. Islam , Philip Kuekes , Shih-Yuan Wang , Duncan Stewart , Shashank Sharma
IPC分类号： H01L23/48
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01S5/0261 , H01S5/041 , H01S5/183 , H01S5/341 , H01S5/3412 , H01S5/3428 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/938
摘要： A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.
摘要翻译：纳米柱廊结构及其制造和互连方法利用从半导体层的（111）水平表面几乎垂直地生长到另一层的另一水平表面的纳米线列，以连接这些层。纳米柱廊结构包括具有（111）水平表面的第一层; 具有另一水平表面的第二层; 第一层和第二层之间的绝缘体支撑，其将第一层与第二层分离。第二层的一部分突出于绝缘体支撑件上，使得伸出部分的水平表面与第一层的（111）水平表面间隔开并面对第一层的（111）水平表面。该结构还包括从（111）水平表面几乎垂直延伸到相对的水平表面的纳米线列，使得纳米线列将第一层连接到第二层。

17. 发明申请

US20050164412A1 Custom electrodes for molecular memory and logic devices 审中-公开
标题翻译：用于分子存储器和逻辑器件的定制电极
公开(公告)号：US20050164412A1
公开(公告)日：2005-07-28
申请号：US10995608
申请日：2004-11-22
申请人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/00
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method for tailoring at least portions of an exposed non-planar layered surface of a conductive layer formed on a substrate having a first surface roughness to provide the exposed surface with a second surface roughness. The method includes: forming the conductive layer on the substrate; and tailoring at least portions of the exposed surface of the conductive layer in a plasma to at least smooth the exposed surface of the conductive layer, whereby the second surface roughness is essentially the same as the first surface roughness.
摘要翻译：一种用于调整形成在具有第一表面粗糙度的基底上的导电层的暴露的非平面层状表面的至少一部分以提供具有第二表面粗糙度的暴露表面的方法。该方法包括：在基板上形成导电层; 以及在等离子体中定制导电层的暴露表面的至少部分，以至少平滑导电层的暴露表面，由此第二表面粗糙度基本上与第一表面粗糙度相同。

18. 发明授权

US06855647B2 Custom electrodes for molecular memory and logic devices 失效
公开(公告)号：US06855647B2
公开(公告)日：2005-02-15
申请号：US10405294
申请日：2003-04-02
申请人： Patricia A. Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia A. Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/26
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.

19. 发明申请

US20050026427A1 Custom electrodes for molecular memory and logic devices 审中-公开
标题翻译：用于分子存储器和逻辑器件的定制电极
公开(公告)号：US20050026427A1
公开(公告)日：2005-02-03
申请号：US10930062
申请日：2004-08-30
申请人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/00
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.
摘要翻译：提供了一种用于制造分子电子器件的方法，该分子电子器件至少包括底部电极和底部电极上的分子开关膜。该方法包括通过以下工艺形成底部电极，该方法包括：清洗要沉积底部电极的衬底的部分; 预溅射部分; 在至少部分上沉积导电层; 并清洁导电层的顶表面。有利地，导电电极的性质包括：低或受控的氧化物形成（或可能钝化），高熔点，高体积弹性模量和低扩散。光滑的沉积膜表面与Langmuir-Blodgett分子膜沉积相容。定制的表面对于SAM沉积是更有用的。金属性质使分子具有高导电性。阻挡层可以被添加到器件堆叠，即在导电层上的Al 2 O 3。

20. 发明授权

US4425500A Firing range 失效
标题翻译：射击范围
公开(公告)号：US4425500A
公开(公告)日：1984-01-10
申请号：US286279
申请日：1981-07-23
申请人： Lindsay C. Knight , David A. Cash , Duncan Stewart , Robert A. Cottis , William H. Bowyer , Robert C. Newnham , Frederick J. Williams , David W. Pardon
发明人： Lindsay C. Knight , David A. Cash , Duncan Stewart , Robert A. Cottis , William H. Bowyer , Robert C. Newnham , Frederick J. Williams , David W. Pardon
IPC分类号： B23K11/14 , B21F27/10 , B23K11/00 , B23K11/10 , F41G3/26 , F41J5/00 , F41J5/12 , G01H3/00 , G01S5/18 , G01S5/22 , G01S7/521 , H04R1/00 , H04R17/00 , G06F15/20
CPC分类号： F41G3/26 , F41J5/12 , G01S5/22 , Y10S367/906
摘要： An apparatus for use in a firing range, in which transducers located adjacent the target area detect the airborne shock wave from supersonic projectiles. The position at which each projectile passes through the target plane is determined from the relative time of arrival of the associated shock wave at the transducers. A visual display of the target and the projectile position is provided for the use of range personnel.
摘要翻译：一种用于击发范围的装置，其中位于目标区域附近的换能器检测来自超音速射弹的空中冲击波。每个抛射体通过目标平面的位置由相关联的冲击波到达换能器的相对时间确定。提供目标和射弹位置的视觉显示，以供范围人员使用。

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