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1. 发明授权

US07803712B2 Multilevel imprint lithography 失效
公开(公告)号：US07803712B2
公开(公告)日：2010-09-28
申请号：US11636264
申请日：2006-12-07
申请人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
发明人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
IPC分类号： H01L21/308
CPC分类号： H01L21/76838 , B81C99/009 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.

2. 发明申请

US20100112809A1 Multilevel imprint lithography 失效
标题翻译：多层压印光刻
公开(公告)号：US20100112809A1
公开(公告)日：2010-05-06
申请号：US11636264
申请日：2006-12-07
申请人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
发明人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
IPC分类号： H01L21/768
CPC分类号： H01L21/76838 , B81C99/009 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.
摘要翻译：提供具有突出图案的模具，其通过压印过程被压入薄聚合物膜。提供了纳米线和微丝之间的控制连接以及电子电路的其它光刻元件。打印印记被配置成形成大致平行的纳米线的阵列，其具有（1）X方向上的微尺寸，（2）在Y方向上的纳米尺寸和纳米间距，以及Z方向上的三个或更多个不同的高度。如此形成的印章可以用于将特定的单个纳米线连接到微细线或垫的特定微观区域。模具中的突出图案在薄聚合物膜中产生凹陷，因此聚合物层获得模具上图案的相反。在除去模具之后，处理膜，使得聚合物图案可以在基底上的金属/半导体图案上转印。

3. 发明授权

US07256435B1 Multilevel imprint lithography 有权
标题翻译：多层压印光刻
公开(公告)号：US07256435B1
公开(公告)日：2007-08-14
申请号：US10453329
申请日：2003-06-02
申请人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
发明人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
IPC分类号： H01L27/10
CPC分类号： H01L21/76838 , B81C99/009 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.
摘要翻译：提供具有突出图案的模具，其通过压印过程被压入薄聚合物膜。提供了纳米线和微丝之间的控制连接以及电子电路的其它光刻元件。打印印记被配置成形成大致平行的纳米线的阵列，其具有（1）X方向上的微尺寸，（2）在Y方向上的纳米尺寸和纳米间距，以及Z方向上的三个或更多个不同的高度。如此形成的印章可以用于将特定的单个纳米线连接到微细线或垫的特定微观区域。模具中的突出图案在薄聚合物膜中产生凹陷，因此聚合物层获得模具上图案的相反。在除去模具之后，处理膜，使得聚合物图案可以在基底上的金属/半导体图案上转印。

4. 发明授权

US06624002B2 Bistable molecular mechanical devices with an appended rotor activated by an electric field for electronic switching, gating and memory applications 失效
公开(公告)号：US06624002B2
公开(公告)日：2003-09-23
申请号：US10051505
申请日：2002-01-16
申请人： Alexandre M. Bratkovski , Pavel Kornilovich , R. Stanley Williams , Xiao-An Zhang
发明人： Alexandre M. Bratkovski , Pavel Kornilovich , R. Stanley Williams , Xiao-An Zhang
IPC分类号： H01L5140
CPC分类号： G11C23/00 , B82Y10/00 , C07D219/16 , G02F1/15 , G02F1/174 , G11C13/0014 , G11C13/02 , G11C13/04 , G11C2213/14 , G11C2213/77 , G11C2213/81
摘要： In accordance with the present invention, nanometer-scale reversible electronic switches are provided that can be assembled to make cross-bar circuits that provide memory, logic, and communications functions. The electronic switches, or crossed-wire devices, comprise a pair of crossed wires that form a junction where one wire crosses another at an angle other than zero degrees and at least one connector species connecting the pair of crossed wires in the junction. The junction has a functional dimension in nanometers, wherein at least one connector species and the pair of crossed wires forms an electrochemical cell. The connector species comprises a bistable molecule having a general formula given by The bistable molecules evidence high switching speed. Such molecules are essentially stable against switching due to thermal fluctuations.

5. 发明授权

US07009201B2 Low-forward-voltage molecular rectifier 失效
标题翻译：低电压分子整流器
公开(公告)号：US07009201B2
公开(公告)日：2006-03-07
申请号：US10703266
申请日：2003-11-07
申请人： Pavel Kornilovich , Alexendre M. Bratkovski , Shun-Chi Chang , R. Stanley Williams
发明人： Pavel Kornilovich , Alexendre M. Bratkovski , Shun-Chi Chang , R. Stanley Williams
IPC分类号： H01L51/00
CPC分类号： H01L51/0595 , B82Y10/00 , H01L51/005 , Y10S977/70 , Y10S977/932 , Y10S977/936
摘要： A single molecular species having a low-forward-voltage rectifying property is provided. The molecular species is represented by the formula: CL-IL-A-IR-CR where A is a “conducting” moiety (with a relatively narrow HOMO-LUMO gap), IL and IR are each an “insulating” moiety (with a relatively wide HOMO-LUMO gap), CL is a connecting group for attachment to a first electrode, and CR is a connecting group for attachment to a second electrode. Also, a low-forward-voltage rectifying molecular rectifier is provided, comprising the molecular species attached between the two electrodes. The present teachings provide a set of design rules to build single-molecule rectifying diodes that operate at low forward and large reverse voltages. Such single-molecule rectifying diodes are useful in a variety of nano-scale applications.
摘要翻译：提供具有低正向电压整流特性的单一分子种类。分子种类由以下公式表示：<？in-line-formula description =“In-line Formulas”end =“lead”？> CL-IL-A-IR-CR <？in-line-formula description =“ 其中A是“导电”部分（具有较窄的HOMO-LUMO间隙），IL和IR各自为“绝缘”部分（具有较宽的HOMO-LUMO间隙）中，CL是用于连接到第一电极的连接组，CR是连接到第二电极的连接组。此外，提供了一种低电压整流分子整流器，其包括附着在两个电极之间的分子种类。本教导提供了一组设计规则来构建在低正向和反向电压较低的情况下工作的单分子整流二极管。这种单分子整流二极管可用于各种纳米级应用。

6. 发明授权

US06512119B2 Bistable molecular mechanical devices with an appended rotor activated by an electric field for electronic switching, gating and memory applications 失效
标题翻译：双稳态分子机械装置，具有通过电场激活的附加转子用于电子开关，门控和存储器应用
公开(公告)号：US06512119B2
公开(公告)日：2003-01-28
申请号：US09759438
申请日：2001-01-12
申请人： Alexandre M. Bratkovski , Pavel Kornilovich , R. Stanley Williams , Xiao-An Zhang
发明人： Alexandre M. Bratkovski , Pavel Kornilovich , R. Stanley Williams , Xiao-An Zhang
IPC分类号： C07D21908
CPC分类号： G11C23/00 , B82Y10/00 , C07D219/16 , G02F1/15 , G02F1/174 , G11C13/0014 , G11C13/02 , G11C13/04 , G11C2213/14 , G11C2213/77 , G11C2213/81
摘要： In accordance with the present invention, nanometer-scale reversible electronic switches are provided that can be assembled to make cross-bar circuits that provide memory, logic, and communications functions. The electronic switches, or crossed-wire devices, comprise a pair of crossed wires that form a junction where one wire crosses another at an angle other than zero degrees and at least one connector species connecting the pair of crossed wires in the junction. The junction has a functional dimension in nanometers, wherein at least one connector species and the pair of crossed wires forms an electrochemical cell. The connector species comprises a bistable molecule having a general formula given by The bistable molecules evidence high switching speed. Such molecules are essentially stable against switching due to thermal fluctuations.
摘要翻译：根据本发明，提供了可组装纳米级的可逆电子开关，以制造提供存储器，逻辑和通信功能的交叉电路。电子开关或交叉线装置包括一对交叉导线，其形成一个线，其中一个线以零度以外的角度与另一条线交叉，并且至少一个连接器种类连接在该结中的一对交叉线。该结具有纳米的功能尺寸，其中至少一个连接器种类和一对交叉线形成电化学电池。连接器种类包括双稳态分子，其具有由双稳态分子表示的通式表示高切换速度。由于热波动，这种分子基本上是稳定的。

7. 发明授权

US06670631B2 Low-forward-voltage molecular rectifier 失效
标题翻译：低电压分子整流器
公开(公告)号：US06670631B2
公开(公告)日：2003-12-30
申请号：US10151856
申请日：2002-05-20
申请人： Pavel Kornilovich , Alexendre M. Bratkovski , Shun-Chi Chang , R. Stanley Williams
发明人： Pavel Kornilovich , Alexendre M. Bratkovski , Shun-Chi Chang , R. Stanley Williams
IPC分类号： H01L5100
CPC分类号： H01L51/0595 , B82Y10/00 , H01L51/005 , Y10S977/70 , Y10S977/932 , Y10S977/936
摘要： A single molecular species having a low-forward-voltage rectifying property is provided. The molecular species is represented by the formula: CL—IL—A—IR—CR where A is a “conducting” moiety (with a relatively narrow HOMO-LUMO gap), IL and IR are each an “insulating” moiety (with a relatively wide HOMO-LUMO gap), CL is a connecting group for attachment to a first electrode, and CR is a connecting group for attachment to a second electrode. Also, a low-forward-voltage rectifying molecular rectifier is provided, comprising the molecular species attached between the two electrodes. The present teachings provide a set of design rules to build single-molecule rectifying diodes that operate at low forward and large reverse voltages. Such single-molecule rectifying diodes are useful in a variety of nano-scale applications.
摘要翻译：提供具有低正向电压整流特性的单一分子种类。分子物质由下式表示：其中A是“导电”部分（具有相对较窄的HOMO-LUMO间隙），IL和IR各自是“绝缘”部分（具有相对较宽的HOMO-LUMO间隙），CL 是用于连接到第一电极的连接组，并且CR是用于附接到第二电极的连接组。此外，提供了一种低电压整流分子整流器，其包括附着在两个电极之间的分子种类。本教导提供了一组设计规则来构建在低正向和反向电压较低的情况下工作的单分子整流二极管。这种单分子整流二极管可用于各种纳米级应用。

8. 发明授权

US07335579B2 Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making 失效
标题翻译：采用自对准整流元件的纳米级存储器件及其制造方法
公开(公告)号：US07335579B2
公开(公告)日：2008-02-26
申请号：US11331697
申请日：2006-01-12
申请人： James Stasiak , Kevin F Peters , Jennifer Wu , Pavel Kornilovich , Yong Chen
发明人： James Stasiak , Kevin F Peters , Jennifer Wu , Pavel Kornilovich , Yong Chen
IPC分类号： H01L21/20
CPC分类号： B82Y10/00 , H01L27/1021 , H01L27/24 , Y10S977/887 , Y10S977/94
摘要： A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.
摘要翻译：一种存储器件，包括衬底和设置在衬底上的多个自对准纳米整流元件。每个纳米整流元件具有多个第一电极线，并且多个器件结构设置在形成多个自对准纳米整流元件的多个第一电极线上。每个器件结构具有小于约75纳米的至少一个横向尺寸。存储器件还包括设置在器件结构上的多个开关元件，并且在至少一个方向上与器件结构自对准。此外，存储器件包括多个第二电极线，其布置在开关元件上方，电耦合并自对准，从而形成存储器件。

9. 发明申请

US20060128129A1 Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making 失效
标题翻译：采用自对准整流元件的纳米级存储器件及其制造方法
公开(公告)号：US20060128129A1
公开(公告)日：2006-06-15
申请号：US11331697
申请日：2006-01-12
申请人： James Stasiak , Kevin Peters , Jennifer Wu , Pavel Kornilovich , Yong Chen
发明人： James Stasiak , Kevin Peters , Jennifer Wu , Pavel Kornilovich , Yong Chen
IPC分类号： H01L21/20
CPC分类号： B82Y10/00 , H01L27/1021 , H01L27/24 , Y10S977/887 , Y10S977/94
摘要： A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.
摘要翻译：一种存储器件，包括衬底和设置在衬底上的多个自对准纳米整流元件。每个纳米整流元件具有多个第一电极线，并且多个器件结构设置在形成多个自对准纳米整流元件的多个第一电极线上。每个器件结构具有小于约75纳米的至少一个横向尺寸。存储器件还包括设置在器件结构上的多个开关元件，并且在至少一个方向上与器件结构自对准。此外，存储器件包括多个第二电极线，其布置在开关元件上方，电耦合并自对准，从而形成存储器件。

10. 发明授权

US07034332B2 Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making 失效
标题翻译：采用自对准整流元件的纳米级存储器件及其制造方法
公开(公告)号：US07034332B2
公开(公告)日：2006-04-25
申请号：US10765799
申请日：2004-01-27
申请人： James Stasiak , Kevin F Peters , Jennifer Wu , Pavel Kornilovich , Yong Chen
发明人： James Stasiak , Kevin F Peters , Jennifer Wu , Pavel Kornilovich , Yong Chen
IPC分类号： H01L35/24
CPC分类号： B82Y10/00 , H01L27/1021 , H01L27/24 , Y10S977/887 , Y10S977/94
摘要： A memory device including a substrate, and multiple self-alignednano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.
摘要翻译：一种存储器件，包括衬底和设置在衬底上的多个自对准纳米整流元件。每个纳米整流元件具有多个第一电极线，并且多个器件结构设置在形成多个自对准纳米整流元件的多个第一电极线上。每个器件结构具有小于约75纳米的至少一个横向尺寸。存储器件还包括设置在器件结构上的多个开关元件，并且在至少一个方向上与器件结构自对准。此外，存储器件包括多个第二电极线，其布置在开关元件上方，电耦合并自对准，从而形成存储器件。

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