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51. 发明授权

US08815724B2 Process for forming cobalt-containing materials 有权
标题翻译：用于形成含钴材料的方法
公开(公告)号：US08815724B2
公开(公告)日：2014-08-26
申请号：US13452237
申请日：2012-04-20
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： C23C16/42 , C23C16/18 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

52. 发明申请

US20090004850A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS 审中-公开
标题翻译：用于形成钴和钴硅酸盐材料的方法在TUNGSTEN联系应用中
公开(公告)号：US20090004850A1
公开(公告)日：2009-01-01
申请号：US12111923
申请日：2008-04-29
申请人： SESHADRI GANGULI , SANG-HO YU , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
发明人： SESHADRI GANGULI , SANG-HO YU , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45523 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.
摘要翻译：本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。在一个实施例中，提供了一种用于在基板上形成含金属硅化物的材料的方法，其包括在气相沉积工艺期间在含硅表面上形成金属硅化物材料，通过在其上顺序地沉积多个金属硅化物层和甲硅烷基层衬底，在所述金属硅化物材料上沉积金属覆盖层，在退火过程期间加热所述衬底，以及在所述阻挡材料上沉积金属接触材料。在一个实例中，金属硅化物层和金属覆盖层都含有钴。钴硅化物材料可以含有约1.9或更大，例如大于约2.0，或约2.2或更大的硅/钴原子比。

53. 发明申请

US20120214303A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS 失效
标题翻译：用于形成钴和钴硅酸盐材料的方法在TUNGSTEN联系应用中
公开(公告)号：US20120214303A1
公开(公告)日：2012-08-23
申请号：US13456904
申请日：2012-04-26
申请人： SESHADRI GANGULI , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
发明人： SESHADRI GANGULI , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
IPC分类号： H01L21/3205
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45523 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.
摘要翻译：本发明的实施方案通常提供形成硅化钴的方法。在一个实施例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体预清洁过程。该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

54. 发明授权

US08187970B2 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 有权
标题翻译：在钨接触应用中形成钴和钴硅化物材料的方法
公开(公告)号：US08187970B2
公开(公告)日：2012-05-29
申请号：US12969445
申请日：2010-12-15
申请人： Seshadri Ganguli , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
发明人： Seshadri Ganguli , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45523 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Methods for forming cobalt silicide materials are disclosed herein. In one example, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The exemplary method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the first cobalt silicide layer during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.
摘要翻译：本文公开了形成钴硅化物材料的方法。在一个实例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体预清洁过程。所述示例性方法还包括通过CVD工艺在所述含硅材料上沉积钴金属层，加热所述衬底以在所述钴金属层与所述含硅材料的界面处的第一钴酸钴层中形成包含CoSi的第一钴硅化物层退火工艺，在蚀刻过程期间从第一钴硅化物层去除任何未反应的钴金属，以及在第二退火工艺期间加热衬底以形成包含CoSi 2的第二钴硅化物层。

55. 发明申请

US20110124192A1 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS 审中-公开
标题翻译：形成含钴材料的方法
公开(公告)号：US20110124192A1
公开(公告)日：2011-05-26
申请号：US13014656
申请日：2011-01-26
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/768
CPC分类号： C23C16/18 , C23C16/42 , C23C16/56 , H01L21/02057 , H01L21/02063 , H01L21/02068 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/68785 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76864
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

56. 发明申请

US20110086509A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS 有权
标题翻译：用于形成钴和钴硅酸盐材料的方法在TUNGSTEN联系应用中
公开(公告)号：US20110086509A1
公开(公告)日：2011-04-14
申请号：US12969445
申请日：2010-12-15
申请人： SESHADRI GANGULI , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
发明人： SESHADRI GANGULI , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
IPC分类号： H01L21/285
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45523 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.
摘要翻译：本发明的实施方案通常提供形成硅化钴的方法。在一个实施例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体预清洁过程。该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

57. 发明授权

US06607976B2 Copper interconnect barrier layer structure and formation method 失效
标题翻译：铜互连屏障层结构和形成方法
公开(公告)号：US06607976B2
公开(公告)日：2003-08-19
申请号：US09964108
申请日：2001-09-25
申请人： Ling Chen , Seshadri Ganguli , Christophe Marcadal , Wei Cao , Roderick C. Mosely , Mei Chang
发明人： Ling Chen , Seshadri Ganguli , Christophe Marcadal , Wei Cao , Roderick C. Mosely , Mei Chang
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [WXN] copper interconnect barrier layer) on a substrate with a high (e.g., greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric layers. The method includes first depositing a thin titanium-nitride (TiN) or tantalum nitride (TaN) nucleation layer on the substrate, followed by the formation of a tungsten-containing copper interconnect barrier layer (e.g., a W or WXN copper interconnect barrier layer) overlying the substrate. The tungsten-containing copper interconnect barrier layer can, for example, be formed using a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas (e.g., tungsten hexacarbonyl [W(CO)6]) or a WF6-based Atomic Layer Deposition (ALD) technique. The presence of a thin TiN (or TaN) nucleation layer facilitates the formation of a tungsten-containing copper interconnect barrier layer with a sidewall step coverage of greater than 30% and ample adhesion to dielectric layers. A copper interconnect barrier layer structure includes a thin titanium-nitride (TiN) (or tantalum nitride [TaN]) nucleation layer disposed directly on the dielectric substrate (e.g., a single or dual-damascene copper interconnect dielectric substrate). The copper interconnect barrier layer structure also includes a tungsten-containing copper interconnect barrier layer (e.g., a W or WXN copper interconnect barrier layer) formed on the thin TiN (or TaN) nucleation layer using, for example, a CVD technique that employs a fluorine-free tungsten-containing gas (e.g., [W(CO)6]) or a WF6-based ALD technique.
摘要翻译：在具有高（例如，大于30％）侧壁台阶覆盖的基板上形成含钨铜互连势垒层（例如，钨[W]或氮化钨[WXN]铜互连势垒层）的方法，以及充足的粘附到底层电介质层。该方法包括首先在衬底上沉积薄的氮化钛（TiN）或氮化钽（TaN）成核层，随后形成含钨的铜互连屏障层（例如W或WXN铜互连阻挡层）覆盖基板。含钨铜互连阻挡层例如可以使用使用无氟含钨气体（例如六羰基钨[W（CO）6]）或WF 6的化学气相沉积（CVD）技术来形成的原子层沉积（ALD）技术。薄TiN（或TaN）成核层的存在有助于形成具有大于30％的侧壁台阶覆盖率和对电介质层的充分粘合性的含钨铜互连屏障层。铜互连势垒层结构包括直接设置在电介质基板（例如，单镶嵌铜互连电介质基板）上的薄氮化钛（TiN）（或氮化钽[TaN]）成核层。铜互连阻挡层结构还包括使用例如CVD技术在薄TiN（或TaN）成核层上形成的含钨铜互连势垒层（例如，W或WXN铜互连势垒层），其采用无氟含钨气体（例如[W（CO）6]）或基于WF6的ALD技术。

58. 发明申请

US20100252417A1 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：US20100252417A1
公开(公告)日：2010-10-07
申请号：US12754473
申请日：2010-04-05
申请人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
发明人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

59. 发明授权

US09147578B2 Contact clean by remote plasma and repair of silicide surface 有权
标题翻译：通过远程等离子体接触清洁并修复硅化物表面
公开(公告)号：US09147578B2
公开(公告)日：2015-09-29
申请号：US13004740
申请日：2011-01-11
申请人： Xinliang Lu , Chien-Teh Kao , Chiukin Steve Lai , Mei Chang
发明人： Xinliang Lu , Chien-Teh Kao , Chiukin Steve Lai , Mei Chang
IPC分类号： H01L21/00 , H01L21/285 , H01L21/02 , H01L21/28 , H01L21/321 , H01L29/66
CPC分类号： H01L21/28518 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/28061 , H01L21/321 , H01L29/665 , H01L29/6659 , Y10S438/906
摘要： Embodiments provide methods for treating a metal silicide contact which includes positioning a substrate having an oxide layer disposed on a metal silicide contact surface within a processing chamber, cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, and exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process. In some examples, the cleaning of the metal silicide contact surface includes cooling the substrate to an initial temperature of less than 65° C., forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma, exposing the oxide layer to the reactive species to form a thin film, and heating the substrate to about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface.
摘要翻译：实施例提供了处理金属硅化物接触的方法，其包括将具有设置在处理室内的金属硅化物接触表面上的氧化物层的衬底定位，在金属硅化物接触表面中清洁金属硅化物接触表面以除去氧化物层同时形成清洁的硅化物接触表面清洁工艺，以及将清洁的硅化物接触表面暴露于含硅化合物，以在再生过程中形成回收的硅化物接触表面。在一些实例中，金属硅化物接触表面的清洁包括将衬底冷却至低于65℃的初始温度，通过点燃等离子体从氨和三氟化氮的气体混合物形成反应物质，将氧化物层暴露于反应性物质形成薄膜，并将衬底加热至约100℃或更高以在形成清洁的硅化物接触表面的同时从衬底移除薄膜。

60. 发明授权

US08043933B2 Integration sequences with top surface profile modification 失效
标题翻译：具有顶面轮廓修改的积分序列
公开(公告)号：US08043933B2
公开(公告)日：2011-10-25
申请号：US12620806
申请日：2009-11-18
申请人： Chien-Teh Kao , Xinliang Lu , Zhenbin Ge , Mei Chang , Hoiman Raymond Hung , Nitin Ingle
发明人： Chien-Teh Kao , Xinliang Lu , Zhenbin Ge , Mei Chang , Hoiman Raymond Hung , Nitin Ingle
IPC分类号： H01L21/76
CPC分类号： H01L21/76232 , H01L21/67219 , H01L27/11521
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.
摘要翻译：本发明的实施例一般涉及用于处理半导体衬底的装置和方法。特别地，本发明的实施例涉及用于形成具有具有圆形底部的凹部的浅沟槽隔离的装置和方法。本发明的一个实施例包括通过从填充的沟槽结构中去除一部分材料并且使凹部的圆角底部倒圆，在填充的沟槽结构中形成凹陷。通过将填充在沟槽结构中的相同材料的共形层沉积在衬底上并且从凹部的侧壁去除材料的共形层来进行圆角底角。

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