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51. 发明申请

US20120264291A1 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS 有权
标题翻译：形成含钴材料的方法
公开(公告)号：US20120264291A1
公开(公告)日：2012-10-18
申请号：US13452237
申请日：2012-04-20
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/768
CPC分类号： C23C16/42 , C23C16/18 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

52. 发明申请

US20060153973A1 Ruthenium layer formation for copper film deposition 审中-公开
标题翻译：用于铜膜沉积的钌层形成
公开(公告)号：US20060153973A1
公开(公告)日：2006-07-13
申请号：US11336527
申请日：2006-01-20
申请人： Mei Chang , Seshadri Ganguli , Nirmalya Maity
发明人： Mei Chang , Seshadri Ganguli , Nirmalya Maity
IPC分类号： B05D5/12 , C23C28/00 , H05K3/00 , C23C28/02 , B05D3/10
CPC分类号： H01L21/76874 , B82Y30/00 , C23C16/18 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/76873
摘要： In one embodiment, a method for forming a material on a substrate is provided which includes positioning a substrate containing a dielectric material having vias formed therein within a process chamber, forming a barrier layer within the vias and on the dielectric material during a barrier deposition process, forming a ruthenium layer on the barrier layer during a ruthenium deposition process, and filling the vias with a copper material during a copper deposition process. The copper material may be formed by depositing a copper bulk layer over a copper seed layer. The method further provides that the ruthenium layer may be formed by an atomic layer deposition process (ALD) or a physical vapor deposition (PVD) process and the copper material may be formed by an electroless chemical plating process, an electroplating process, a chemical vapor deposition process, an ALD process and/or a PVD process.
摘要翻译：在一个实施例中，提供了一种用于在衬底上形成材料的方法，其包括将包含其中形成有通孔的电介质材料的衬底定位在处理室内，在阻挡层沉积过程期间在通孔内和电介质材料上形成阻挡层在钌沉积工艺期间在阻挡层上形成钌层，并且在铜沉积工艺期间用铜材料填充通孔。铜材料可以通过在铜籽晶层上沉积铜体积层来形成。该方法还提供了可以通过原子层沉积工艺（ALD）或物理气相沉积（PVD）工艺形成钌层，并且铜材料可以通过无电化学电镀工艺，电镀工艺，化学蒸气沉积工艺，ALD工艺和/或PVD工艺。

53. 发明授权

US06319728B1 Method for treating a deposited film for resistivity reduction 失效
标题翻译：用于处理沉积膜以降低电阻率的方法
公开(公告)号：US06319728B1
公开(公告)日：2001-11-20
申请号：US09092477
申请日：1998-06-05
申请人： Mohan K. Bhan , Ling Chen , Bo Zheng , Justin Jones , Seshadri Ganguli , Timothy Levine , Samuel Wilson , Mei Chang
发明人： Mohan K. Bhan , Ling Chen , Bo Zheng , Justin Jones , Seshadri Ganguli , Timothy Levine , Samuel Wilson , Mei Chang
IPC分类号： H01L2144
CPC分类号： H01L21/76862 , C23C16/18 , C23C16/56 , H01L21/76843 , H01L21/76864 , H01L21/76868 , H01L21/76876 , H01L21/76886
摘要： A method for reducing the resistivity of a copper layer on a wafer. A moisture containing seed layer of copper is formed over a layer of material on a wafer. The copper seed layer is treated by either heat or ions from a plasma to anneal out moisture thereby reducing its resistivity and improving its adhesion to the underlying layer. A moisture free copper layer is then deposited on top of the “clean” or treated copper seed layer.
摘要翻译：一种降低晶片上铜层电阻率的方法。在晶片上的一层材料上形成含水分的铜种籽层。铜种子层通过来自等离子体的热或离子来处理以退出水分，从而降低其电阻率并改善其与下层的粘附性。然后将无水分的铜层沉积在“干净”或处理的铜籽晶层的顶部。

54. 发明授权

US08187970B2 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 有权
标题翻译：在钨接触应用中形成钴和钴硅化物材料的方法
公开(公告)号：US08187970B2
公开(公告)日：2012-05-29
申请号：US12969445
申请日：2010-12-15
申请人： Seshadri Ganguli , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
发明人： Seshadri Ganguli , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45523 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Methods for forming cobalt silicide materials are disclosed herein. In one example, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The exemplary method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the first cobalt silicide layer during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.
摘要翻译：本文公开了形成钴硅化物材料的方法。在一个实例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体预清洁过程。所述示例性方法还包括通过CVD工艺在所述含硅材料上沉积钴金属层，加热所述衬底以在所述钴金属层与所述含硅材料的界面处的第一钴酸钴层中形成包含CoSi的第一钴硅化物层退火工艺，在蚀刻过程期间从第一钴硅化物层去除任何未反应的钴金属，以及在第二退火工艺期间加热衬底以形成包含CoSi 2的第二钴硅化物层。

55. 发明申请

US20110124192A1 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS 审中-公开
标题翻译：形成含钴材料的方法
公开(公告)号：US20110124192A1
公开(公告)日：2011-05-26
申请号：US13014656
申请日：2011-01-26
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/768
CPC分类号： C23C16/18 , C23C16/42 , C23C16/56 , H01L21/02057 , H01L21/02063 , H01L21/02068 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/68785 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76864
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

56. 发明授权

US06607976B2 Copper interconnect barrier layer structure and formation method 失效
标题翻译：铜互连屏障层结构和形成方法
公开(公告)号：US06607976B2
公开(公告)日：2003-08-19
申请号：US09964108
申请日：2001-09-25
申请人： Ling Chen , Seshadri Ganguli , Christophe Marcadal , Wei Cao , Roderick C. Mosely , Mei Chang
发明人： Ling Chen , Seshadri Ganguli , Christophe Marcadal , Wei Cao , Roderick C. Mosely , Mei Chang
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [WXN] copper interconnect barrier layer) on a substrate with a high (e.g., greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric layers. The method includes first depositing a thin titanium-nitride (TiN) or tantalum nitride (TaN) nucleation layer on the substrate, followed by the formation of a tungsten-containing copper interconnect barrier layer (e.g., a W or WXN copper interconnect barrier layer) overlying the substrate. The tungsten-containing copper interconnect barrier layer can, for example, be formed using a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas (e.g., tungsten hexacarbonyl [W(CO)6]) or a WF6-based Atomic Layer Deposition (ALD) technique. The presence of a thin TiN (or TaN) nucleation layer facilitates the formation of a tungsten-containing copper interconnect barrier layer with a sidewall step coverage of greater than 30% and ample adhesion to dielectric layers. A copper interconnect barrier layer structure includes a thin titanium-nitride (TiN) (or tantalum nitride [TaN]) nucleation layer disposed directly on the dielectric substrate (e.g., a single or dual-damascene copper interconnect dielectric substrate). The copper interconnect barrier layer structure also includes a tungsten-containing copper interconnect barrier layer (e.g., a W or WXN copper interconnect barrier layer) formed on the thin TiN (or TaN) nucleation layer using, for example, a CVD technique that employs a fluorine-free tungsten-containing gas (e.g., [W(CO)6]) or a WF6-based ALD technique.
摘要翻译：在具有高（例如，大于30％）侧壁台阶覆盖的基板上形成含钨铜互连势垒层（例如，钨[W]或氮化钨[WXN]铜互连势垒层）的方法，以及充足的粘附到底层电介质层。该方法包括首先在衬底上沉积薄的氮化钛（TiN）或氮化钽（TaN）成核层，随后形成含钨的铜互连屏障层（例如W或WXN铜互连阻挡层）覆盖基板。含钨铜互连阻挡层例如可以使用使用无氟含钨气体（例如六羰基钨[W（CO）6]）或WF 6的化学气相沉积（CVD）技术来形成的原子层沉积（ALD）技术。薄TiN（或TaN）成核层的存在有助于形成具有大于30％的侧壁台阶覆盖率和对电介质层的充分粘合性的含钨铜互连屏障层。铜互连势垒层结构包括直接设置在电介质基板（例如，单镶嵌铜互连电介质基板）上的薄氮化钛（TiN）（或氮化钽[TaN]）成核层。铜互连阻挡层结构还包括使用例如CVD技术在薄TiN（或TaN）成核层上形成的含钨铜互连势垒层（例如，W或WXN铜互连势垒层），其采用无氟含钨气体（例如[W（CO）6]）或基于WF6的ALD技术。

57. 发明授权

US08815724B2 Process for forming cobalt-containing materials 有权
标题翻译：用于形成含钴材料的方法
公开(公告)号：US08815724B2
公开(公告)日：2014-08-26
申请号：US13452237
申请日：2012-04-20
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： C23C16/42 , C23C16/18 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

58. 发明授权

US07832432B2 Chemical delivery apparatus for CVD or ALD 有权
标题翻译：用于CVD或ALD的化学输送装置
公开(公告)号：US07832432B2
公开(公告)日：2010-11-16
申请号：US12500319
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.
摘要翻译：本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线在入口管线和出口管线之间。在一些实施例中，安瓿组件可以包含断开配件。在其他实施例中，第一旁路管线具有设置在其中的截止阀，以使入口管线和出口管线流体耦合或解耦。

59. 发明申请

US20090269507A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES 审中-公开
标题翻译：选择性钴沉积铜表面
公开(公告)号：US20090269507A1
公开(公告)日：2009-10-29
申请号：US12111921
申请日：2008-04-29
申请人： Sang-Ho Yu , Kevin Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan
发明人： Sang-Ho Yu , Kevin Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan
IPC分类号： B05D3/04 , B05D5/12 , C23C16/44
CPC分类号： C23C16/16 , C23C16/0218 , C23C16/18 , H01L21/02068 , H01L21/02074 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/324 , H01L21/76849 , H01L21/7685 , H01L21/76862 , H01L21/76883
摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.
摘要翻译：本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。在一个实施例中，提供了一种用于封盖衬底上的铜表面的方法，其包括将衬底定位在处理室内，其中衬底含有受污染的铜表面和电介质表面，将形成的污染的铜表面暴露于还原剂在预处理过程中的铜表面，将基底暴露于钴前体气体，以在铜表面上选择性地形成钴覆盖层，同时在气相沉积工艺期间暴露介电表面，并且在钴上沉积介电阻挡层覆盖层和电介质表面。在另一个实施方案中，沉积处理循环包括进行气相沉积工艺和随后的后处理工艺，该沉积处理循环可以重复以形成多个钴覆盖层。

60. 发明授权

US07569191B2 Method and apparatus for providing precursor gas to a processing chamber 有权
标题翻译：用于向处理室提供前体气体的方法和装置
公开(公告)号：US07569191B2
公开(公告)日：2009-08-04
申请号：US12233464
申请日：2008-09-18
申请人： Seshadri Ganguli , Ling Chen , Vincent W. Ku
发明人： Seshadri Ganguli , Ling Chen , Vincent W. Ku
IPC分类号： B01D7/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the invention provide a method and an apparatus for generating a gaseous chemical precursor for a processing system. In one embodiment, an apparatus for generating the gaseous chemical precursor used in a vapor deposition processing system is provided and includes a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister, wherein the inlet tube contains an outlet positioned to direct a gas flow away from the outlet port and towards the sidewall of the canister.
摘要翻译：本发明的实施方案提供了一种用于产生处理系统的气态化学前体的方法和装置。在一个实施例中，提供了一种用于产生气相沉积处理系统中使用的气态化学前体的装置，其包括具有侧壁，顶部和底部的罐，所述底部包围其中的内部容积，流体入口端口和出口与内部容积的连通以及从入口延伸到罐中的入口管，其中入口管包含定位成引导气流远离出口并朝向罐的侧壁的出口。

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