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1. 发明申请

US20070004027A1 Method for manufacturing a biosensor element 审中-公开
标题翻译：生物传感器元件的制造方法
公开(公告)号：US20070004027A1
公开(公告)日：2007-01-04
申请号：US11270456
申请日：2005-11-10
申请人： Miwako Nakahara , Takashi Inoue , Tomonori Saeki , Osamu Kogi , Noriko Ban
发明人： Miwako Nakahara , Takashi Inoue , Tomonori Saeki , Osamu Kogi , Noriko Ban
IPC分类号： C12M1/34
CPC分类号： G01N33/54393 , G01N33/54353
摘要： When probe biomolecules are immobilized on a substrate surface, a surfactant (phase transfer catalyst) is added for reaction, whereby immobilization efficiency of the probe biomolecules and coating uniformity thereof are improved. Consequently, it is possible to dramatically improve quantitativity and reproducibility of the biosensor element.
摘要翻译：当将探针生物分子固定在基材表面上时，加入表面活性剂（相转移催化剂）进行反应，从而提高了探针生物分子的固定效率和涂层均匀性。因此，可以显着提高生物传感器元件的定量性和再现性。

2. 发明授权

US06737221B2 Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device 有权
标题翻译：半导体集成电路器件的大规模生产方法和电子器件的制造方法
公开(公告)号：US06737221B2
公开(公告)日：2004-05-18
申请号：US10424854
申请日：2003-04-29
申请人： Takuya Futase , Tomonori Saeki , Mieko Kashi
发明人： Takuya Futase , Tomonori Saeki , Mieko Kashi
IPC分类号： B08B304
CPC分类号： C23F1/30 , H01L21/32134 , H01L27/10814 , H01L28/55 , H01L28/60 , Y10S134/902
摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).
摘要翻译：为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜，通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤的栅极绝缘膜）。

3. 发明授权

US06607988B2 Manufacturing method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US06607988B2
公开(公告)日：2003-08-19
申请号：US09749554
申请日：2000-12-28
申请人： Takashi Yunogami , Yoshitaka Nakamura , Kazuo Nojiri , Sukeyoshi Tsunekawa , Toshiyuki Arai , Miwako Nakahara , Shigeru Ohno , Tomonori Saeki , Masaru Izawa
发明人： Takashi Yunogami , Yoshitaka Nakamura , Kazuo Nojiri , Sukeyoshi Tsunekawa , Toshiyuki Arai , Miwako Nakahara , Shigeru Ohno , Tomonori Saeki , Masaru Izawa
IPC分类号： H01L21302
CPC分类号： H01L28/65 , C23F4/00 , H01L21/32136 , H01L27/10814 , H01L27/10852 , H01L28/91
摘要： With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.
摘要翻译：为了提供使用光致抗蚀剂作为蚀刻掩模对Ru（钌）进行高选择性蚀刻的技术，覆盖沉积在孔的侧壁和底表面上的下电极材料的Ru膜被覆盖与光致抗蚀剂膜接触，然后在含有臭氧气体的气体气氛中进行各向同性的干法蚀刻，由此除去孔外部的Ru膜的一部分。

4. 发明授权

US08034717B2 Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device 有权
公开(公告)号：US08034717B2
公开(公告)日：2011-10-11
申请号：US12207530
申请日：2008-09-10
申请人： Takuya Futase , Tomonori Saeki , Mieko Kashi
发明人： Takuya Futase , Tomonori Saeki , Mieko Kashi
IPC分类号： H01L21/44
CPC分类号： C23F1/30 , H01L21/32134 , H01L27/10814 , H01L28/55 , H01L28/60 , Y10S134/902
摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

5. 发明申请

US20110048454A1 SURFACE TREATMENT METHOD OF METAL MEMBER AND CLEANING NOZZLE 失效
标题翻译：金属部件和清洁喷嘴的表面处理方法
公开(公告)号：US20110048454A1
公开(公告)日：2011-03-03
申请号：US12872582
申请日：2010-08-31
申请人： Tomonori SAEKI , Yoshiyuki ANDO
发明人： Tomonori SAEKI , Yoshiyuki ANDO
IPC分类号： B08B3/00
CPC分类号： B08B3/022 , C23G5/00
摘要： A surface treatment method of a metal member according to an embodiment of the invention includes removing an oily substance on the metal member by using gas-liquid two fluids that are obtained by boiling heated and pressured water under ordinary pressure. A surface treatment device of a metal member for removing an oily substance on the metal member includes self-generation two fluids production means for producing gas-liquid two fluids by boiling heated and pressured water under ordinary pressure, and a surface treatment room carrying out a surface treatment by bringing the self-generation two fluids into contact with the metal member.
摘要翻译：根据本发明的实施方案的金属构件的表面处理方法包括通过使用通过在常压下沸腾加热和加压的水获得的气液两种流体在金属构件上除去油状物质。用于除去金属构件上的油性物质的金属构件的表面处理装置包括通过在常压下煮沸加压和加压的水来生产气液两种流体的自生二流体生产装置，以及执行通过使自发生的两种流体与金属构件接触来进行表面处理。

6. 发明授权

US07247864B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07247864B2
公开(公告)日：2007-07-24
申请号：US11305109
申请日：2005-12-19
申请人： Hiroaki Mito , Katsuhiro Sasada , Kazuo Kato , Tomohiro Kudo , Tomonori Saeki
发明人： Hiroaki Mito , Katsuhiro Sasada , Kazuo Kato , Tomohiro Kudo , Tomonori Saeki
IPC分类号： H01J37/18
CPC分类号： H01J37/185 , H01J37/20 , H01J2237/18 , H01J2237/2001 , H01J2237/204 , H01J2237/2817 , H01L21/67028 , H01L21/67213 , H01L21/67248
摘要： A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.
摘要翻译：提供了样品测量方法和带电粒子束装置，其去除了附着在电子显微镜的样品室中的样品的污染物，以消除对后续制造工艺的不利影响。为了达到这个目标，在通过使用带电粒子束进行样品测量或检查之后，在下一个半导体制造过程之前去除样品上的污染物。这允许去除样品室中附着在样品上的污染物，因此可以使在测量和检查之后的半导体制造过程中可能发生的故障或缺陷被最小化。

7. 发明授权

US07205541B1 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07205541B1
公开(公告)日：2007-04-17
申请号：US11305231
申请日：2005-12-19
申请人： Hiroaki Mito , Katsuhiro Sasada , Kazuo Kato , Tomohiro Kudo , Tomonori Saeki , Yasuo Yahagi , Masayuki Kobayashi
发明人： Hiroaki Mito , Katsuhiro Sasada , Kazuo Kato , Tomohiro Kudo , Tomonori Saeki , Yasuo Yahagi , Masayuki Kobayashi
IPC分类号： G01N13/00 , G21K5/10
CPC分类号： H01J37/20 , H01J2237/022 , H01J2237/2817
摘要： An object of this invention is to provide a charged particle beam apparatus that is capable of handling samples without adhering impurities onto the samples. In a scanning electron microscope in which a lubricant was coated on a sliding portion of a movable member that moves inside a vacuum chamber, a substance from which low molecular components were removed is used as the lubricant. It is thus possible to inhibit sample contamination and suppress the occurrence of defects in a process following measurement of the samples.
摘要翻译：本发明的目的是提供一种能够处理样品而不将杂质附着在样品上的带电粒子束装置。在其中在真空室内移动的可移动部件的滑动部分涂覆有润滑剂的扫描电子显微镜中，使用从其中除去低分子量成分的物质作为润滑剂。因此可以抑制样品污染并抑制样品测量后的处理中的缺陷的发生。

8. 发明授权

US06539959B1 Cleaning apparatus for plate-like part and method thereof 失效
标题翻译：板状零件清洗装置及其方法
公开(公告)号：US06539959B1
公开(公告)日：2003-04-01
申请号：US09498355
申请日：2000-02-04
申请人： Noriyuki Ohroku , Yuichirou Tanaka , Yoichi Takahara , Tomonori Saeki , Susumu Aiuchi , Hitoshi Oka , Fumio Morita , Masataka Fujiki , Akinobu Yamaoka
发明人： Noriyuki Ohroku , Yuichirou Tanaka , Yoichi Takahara , Tomonori Saeki , Susumu Aiuchi , Hitoshi Oka , Fumio Morita , Masataka Fujiki , Akinobu Yamaoka
IPC分类号： B08B310
CPC分类号： H01L21/67051 , B08B3/04 , B08B3/10 , G11B23/505 , Y10S134/902
摘要： At a time of cleaning a plate-like part such as a wafer or the like while rotating, for the purpose of reducing a contamination, a damage and an unevenness of process of the plate-like part which are caused by an amount of charged electricity of the plate-like part, chuck pins (chuck members) 201 which chuck the plate-like part 1 such as the wafer or the like and upper and lower cleaning plates 101 and 121 which oppose to the plate-like part 1 are constituted by a resin material containing carbon powders, and a desired potential difference is applied to a portion between the plate-like part and the cleaning plates by a voltage control unit 601 which is provided in an outer portion.
摘要翻译：在旋转时清洁诸如晶片等的板状部件的时候，为了减少由电荷量引起的污染，板状部件的过程的损坏和不均匀性板状部分夹住板状部分等板状部分1的卡盘销（卡盘部件）201和与板状部分1相对的上下清扫板101和121构成为：含有碳粉末的树脂材料，并且通过设置在外部的电压控制单元601将期望的电位差施加到板状部分和清洁板之间的部分。

9. 发明授权

US08293648B2 Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device 有权
标题翻译：半导体集成电路器件的大规模生产方法和电子器件的制造方法
公开(公告)号：US08293648B2
公开(公告)日：2012-10-23
申请号：US13239571
申请日：2011-09-22
申请人： Takuya Futase , Tomonori Saeki , Mieko Kashi
发明人： Takuya Futase , Tomonori Saeki , Mieko Kashi
IPC分类号： H01L21/44
CPC分类号： C23F1/30 , H01L21/32134 , H01L27/10814 , H01L28/55 , H01L28/60 , Y10S134/902
摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).
摘要翻译：为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜，通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤的栅极绝缘膜）。

10. 发明申请

US20120009800A1 MASS PRODUCTION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF ELECTRONIC DEVICE 有权
标题翻译：半导体集成电路器件的生产方法及电子器件的制造方法
公开(公告)号：US20120009800A1
公开(公告)日：2012-01-12
申请号：US13239571
申请日：2011-09-22
申请人： Takuya FUTASE , Tomonori Saeki , Mieko Kashi
发明人： Takuya FUTASE , Tomonori Saeki , Mieko Kashi
IPC分类号： H01L21/02
CPC分类号： C23F1/30 , H01L21/32134 , H01L27/10814 , H01L28/55 , H01L28/60 , Y10S134/902
摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).
摘要翻译：为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜，通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤的栅极绝缘膜）。

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