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    • 2. 发明授权
    • Substrate drying method for use with a surface tension effect dryer with porous vessel walls
    • 用于表面张力效应干燥器与多孔容器壁的基板干燥方法
    • US06681499B2
    • 2004-01-27
    • US10336193
    • 2003-01-03
    • Dana ScrantonIan Sharp
    • Dana ScrantonIan Sharp
    • B08B310
    • H01L21/67034B08B3/06B08B3/10B08B3/12H01L21/67028
    • A processor and method for rinsing and drying of semiconductor substrates includes a process vessel contained within an outer containment vessel. A diluted organic vapor creates a Marangoni effect flow along the surface of processing liquid contained within the process vessel. The process vessel includes porous walls that allow residual chemicals, organic species, and other unwanted materials to flow from the process vessel to the outer containment vessel. The porous walls allow for the maintenance of a stable surface tension gradient to sustain a consistent Marangoni force for even drying. Replacement processing fluid is preferably introduced to the process vessel to prevent the build up of organic species in the surface layer of the processing fluid.
    • 用于冲洗和干燥半导体衬底的处理器和方法包括容纳在外部容纳容器内的处理容器。 稀释的有机蒸气沿着包含在处理容器内的处理液体的表面产生马兰戈尼效应流。 处理容器包括多孔壁,其允许残留的化学物质,有机物质和其它不需要的物质从处理容器流到外部容器。 多孔壁允许维持稳定的表面张力梯度,以维持一致的马兰戈尼力,以使其均匀干燥。 替代处理流体优选地引入到处理容器中,以防止加工流体的表面层中的有机物质的积聚。
    • 4. 发明授权
    • Cleaning and drying method and apparatus
    • 清洗干燥方法及装置
    • US06575178B1
    • 2003-06-10
    • US09690024
    • 2000-10-16
    • Yuji Kamikawa
    • Yuji Kamikawa
    • B08B310
    • H01L21/02054B08B3/10G11B23/505H01L21/67028Y10S134/902
    • An enclosure 23A that defines a drying chamber 23 is configured of a pair of enclosing elements 23c and 23d and a base element 23b. When wafers enter or leave the drying chamber 23, the enclosing elements 23c and 23d are lifted upward by vertical air cylinders 42 to separate them from the base element 23b. The enclosing elements 23c and 23d are then moved in directions that mutually separate them. To dry wafers within the drying chamber 23, the enclosing elements and the base element 23b are mutually engaged to form a hermetic seal, in the opposite sequence. The present invention reduces the dimensions of the drying chamber without impeding the work of moving wafers into and out of the drying chamber. This makes it possible to reduce the internal volume of the drying chamber, achieving a reduction is the consumption of drying gas, an improvement in the drying efficiency, and a reduction in overall size of the apparatus.
    • 限定干燥室23的外壳23A由一对封闭元件23c和23d以及基座元件23b构成。 当晶片进入或离开干燥室23时,封闭元件23c和23d被垂直气缸42向上提升,以将它们与基座元件23b分开。 然后,封闭元件23c和23d沿相互分开的方向移动。 为了在干燥室23内干燥晶片,封闭元件和基底元件23b以相反的顺序相互接合以形成气密密封。本发明减小了干燥室的尺寸,而不会阻碍将晶片移入和 离开干燥室。 这使得可以减小干燥室的内部容积,实现干燥气体的消耗减少,干燥效率的提高和装置的总体尺寸的减小。
    • 8. 发明授权
    • Method and apparatus for cleaning flat workpieces
    • 用于清洁扁平工件的方法和设备
    • US06460552B1
    • 2002-10-08
    • US09166819
    • 1998-10-05
    • D'Arcy H. Lorimer
    • D'Arcy H. Lorimer
    • B08B310
    • H01L21/67167H01L21/67051H01L21/67207H01L21/67219H01L2924/0002Y10S134/902H01L2924/00
    • A semiconductor deposition system in accordance with the present invention includes a CMP apparatus operative to planarize an active surface of a semiconductor wafer, and a wafer cleaner for cleaning wafer after the CMP process. The wafer cleaner preferably includes a wafer rotating mechanism, a steam inlet for applying steam to the active surface of the wafer as it is rotated and a liquid inlet for simultaneously applying a liquid to the back side surface of the wafer. A method for manufacturing an integrated circuit in accordance with the present invention includes subjecting an active surface of the wafer to a plurality of processes selected from a group including deposition, patterning, doping, planarization, ashing and etching, and steam cleaning the active surface at least once before, during, and after the plurality of processes. Preferably, an aqueous vapor phase is applied to the first surface of the wafer as an aqueous liquid phase is applied to the other surface of the wafer. Spinning the wafer urges condensate from the vapor phase to move toward the edge of the wafer as the wafer surfaces are cleaned.
    • 根据本发明的半导体沉积系统包括可操作以平坦化半导体晶片的有源表面的CMP装置和用于在CMP处理之后清洁晶片的晶片清洁器。 晶片清洗器优选地包括晶片旋转机构,用于在旋转晶片时将蒸汽施加到晶片的有源表面的蒸汽入口以及用于同时向液晶的背面施加液体的液体入口。 根据本发明的用于制造集成电路的方法包括使晶片的有效表面经历从包括沉积,图案化,掺杂,平坦化,灰化和蚀刻的组中选择的多个工艺,以及将活性表面蒸汽清洗 在多个处理之前,期间和之后至少一次。 优选地,当将水相液相施加到晶片的另一个表面时,将水相气相施加到晶片的第一表面。 当晶片表面被清洁时,旋转晶片促使来自气相的冷凝物向晶片的边缘移动。