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1. 发明申请

US20130217240A1 FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体加工的可流动的硅 - 碳 - 氮层
公开(公告)号：US20130217240A1
公开(公告)日：2013-08-22
申请号：US13590611
申请日：2012-08-21
申请人： Abhijit Basu Mallick , Nitin K. Ingle , Linlin Wang , Brian S. Underwood
发明人： Abhijit Basu Mallick , Nitin K. Ingle , Linlin Wang , Brian S. Underwood
IPC分类号： H01L21/02
CPC分类号： H01L21/02274 , C23C16/36 , H01L21/02167 , H01L21/02211 , H01L21/0234 , H01L21/31111
摘要： Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.
摘要翻译：描述了在半导体衬底上形成电介质层的方法。所述方法可以包括向化学气相沉积室提供含硅前体和通电的含氮前体。含硅前体和带电的含氮前体可以在化学气相沉积室中反应，以在基底上沉积可流动的硅 - 碳 - 氮材料。所述方法还可以包括处理可流动的硅 - 碳 - 氮材料以在半导体衬底上形成电介质层。

2. 发明申请

US20130217241A1 TREATMENTS FOR DECREASING ETCH RATES AFTER FLOWABLE DEPOSITION OF SILICON-CARBON-AND-NITROGEN-CONTAINING LAYERS 审中-公开
标题翻译：在含硅和含氮层的流动沉积后减少蚀刻速率的处理
公开(公告)号：US20130217241A1
公开(公告)日：2013-08-22
申请号：US13590702
申请日：2012-08-21
申请人： Brian S. Underwood , Linlin Wang , Sanjay Kamath , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Brian S. Underwood , Linlin Wang , Sanjay Kamath , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/02
CPC分类号： H01L21/02274 , H01L21/02126 , H01L21/02167 , H01L21/02208 , H01L21/02216 , H01L21/02222 , H01L21/02271 , H01L21/02318 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/31111
摘要： Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere.
摘要翻译：描述了用于在半导体衬底上形成和固化可流动的含硅 - 碳和氮的层的方法。硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化的氮含量的前驱物，以加速氮与含较低沉积室的含硅和碳的前体的反应温度。处理初始可流动的含硅碳和氮的层以去除能够流动的组分，但在沉积后不再需要。组分的去除增加了耐蚀刻性，以便允许间隙填充硅 - 碳 - 和含氮层在后续处理过程中保持完整。已经发现这些处理降低了暴露于大气中的膜的性质的演变。

3. 发明授权

US08304351B2 In-situ ozone cure for radical-component CVD 有权
标题翻译：用于自由基组分CVD的原位臭氧固化
公开(公告)号：US08304351B2
公开(公告)日：2012-11-06
申请号：US12972711
申请日：2010-12-20
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/0234
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

4. 发明申请

US20110151677A1 WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS 审中-公开
标题翻译：在可流动CVD过程中形成的介电材料上进行的湿氧化过程
公开(公告)号：US20110151677A1
公开(公告)日：2011-06-23
申请号：US12643196
申请日：2009-12-21
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/316
CPC分类号： H01L21/02326 , H01L21/02343
摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
摘要翻译：提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理并在衬底上形成氧化介电材料。

5. 发明授权

US09390914B2 Wet oxidation process performed on a dielectric material formed from a flowable CVD process 有权
标题翻译：在由可流动CVD工艺形成的电介质材料上进行湿氧化处理
公开(公告)号：US09390914B2
公开(公告)日：2016-07-12
申请号：US13396410
申请日：2012-02-14
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/02
CPC分类号： H01L21/02326 , H01L21/02343
摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
摘要翻译：提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理并在衬底上形成氧化介电材料。

6. 发明申请

US20120142198A1 WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS 有权
标题翻译：在可流动CVD过程中形成的介电材料上进行的湿氧化过程
公开(公告)号：US20120142198A1
公开(公告)日：2012-06-07
申请号：US13396410
申请日：2012-02-14
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/316
CPC分类号： H01L21/02326 , H01L21/02343
摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
摘要翻译：提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理并在衬底上形成氧化介电材料。

7. 发明申请

US20120003840A1 IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD 有权
标题翻译：用于放射性组分CVD的现场臭氧固化
公开(公告)号：US20120003840A1
公开(公告)日：2012-01-05
申请号：US12972711
申请日：2010-12-20
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/3105 , B82Y40/00
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/0234
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

8. 发明授权

US08466073B2 Capping layer for reduced outgassing 失效
标题翻译：封盖层减少排气
公开(公告)号：US08466073B2
公开(公告)日：2013-06-18
申请号：US13448624
申请日：2012-04-17
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/316
CPC分类号： H01L21/022 , C23C16/30 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02323 , H01L21/02326
摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing film is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.
摘要翻译：描述形成氧化硅层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅氮和氢的膜。在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。通过暴露于含氧环境将膜转化为氧化硅。两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

9. 发明申请

US20120309205A1 CAPPING LAYER FOR REDUCED OUTGASSING 失效
标题翻译：吸收层用于减少排气
公开(公告)号：US20120309205A1
公开(公告)日：2012-12-06
申请号：US13448624
申请日：2012-04-17
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/316
CPC分类号： H01L21/022 , C23C16/30 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02323 , H01L21/02326
摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen containing film is formed by combining a radical precursor (excited in a remote plasma) with m unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.
摘要翻译：描述形成氧化硅层的方法。该方法首先通过自由基成分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。通过将自由基前体（在远程等离子体中激发）与未加注射的无碳硅前体组合形成含硅氮和氢的膜。在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。通过暴露于含氧环境将膜转化为氧化硅。两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

10. 发明申请

US20090104789A1 METHOD AND SYSTEM FOR IMPROVING DIELECTRIC FILM QUALITY FOR VOID FREE GAP FILL 有权
标题翻译：用于改善无电隙隙填料的电介质膜质量的方法和系统
公开(公告)号：US20090104789A1
公开(公告)日：2009-04-23
申请号：US11876541
申请日：2007-10-22
申请人： Abhijit Basu Mallick , Jeffrey C. Munro , Linlin Wang , Srinivas D. Nemani , Yi Zheng , Zheng Yuan , Dimitry Lubomirsky , Ellie Y. Yieh
发明人： Abhijit Basu Mallick , Jeffrey C. Munro , Linlin Wang , Srinivas D. Nemani , Yi Zheng , Zheng Yuan , Dimitry Lubomirsky , Ellie Y. Yieh
IPC分类号： H01L21/31
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/24 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/76837
摘要： A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.
摘要翻译：在基板上形成氧化硅层的方法。该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。

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