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1. 发明授权

US07704897B2 HDP-CVD SiON films for gap-fill 失效
标题翻译：用于间隙填充的HDP-CVD SiON膜
公开(公告)号：US07704897B2
公开(公告)日：2010-04-27
申请号：US12035603
申请日：2008-02-22
申请人： Hemant P. Mungekar , Young S. Lee , Agnieszka Jakubowicz , Zhong Qiang Hua , Rionard Purnawan , Sanjay Kamath , Walter Zygmunt
发明人： Hemant P. Mungekar , Young S. Lee , Agnieszka Jakubowicz , Zhong Qiang Hua , Rionard Purnawan , Sanjay Kamath , Walter Zygmunt
IPC分类号： H01L21/316
CPC分类号： C23C16/045 , C23C16/308 , C23C16/507 , H01L21/3145 , H01L27/14627 , H01L27/14629 , Y10T29/41
摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.
摘要翻译：本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

2. 发明申请

US20090215281A1 HDP-CVD SION FILMS FOR GAP-FILL 失效
标题翻译：用于GAP-FILL的HDP-CVD SION膜
公开(公告)号：US20090215281A1
公开(公告)日：2009-08-27
申请号：US12035603
申请日：2008-02-22
申请人： HEMANT P. MUNGEKAR , Young S. Lee , Agnieszka Jakubowicz , Zhong Qiang Hua , Rionard Purnawan , Sanjay Kamath , Walter Zygmunt
发明人： HEMANT P. MUNGEKAR , Young S. Lee , Agnieszka Jakubowicz , Zhong Qiang Hua , Rionard Purnawan , Sanjay Kamath , Walter Zygmunt
IPC分类号： H01L21/469 , H01L21/00 , H05H1/24
CPC分类号： C23C16/045 , C23C16/308 , C23C16/507 , H01L21/3145 , H01L27/14627 , H01L27/14629 , Y10T29/41
摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.
摘要翻译：本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

3. 发明申请

US20080142483A1 MULTI-STEP DEP-ETCH-DEP HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESSES FOR DIELECTRIC GAPFILLS 审中-公开
标题翻译：多级DEP-ETCH-DEP高密度等离子体化学气相沉积工艺用于电介质
公开(公告)号：US20080142483A1
公开(公告)日：2008-06-19
申请号：US11947619
申请日：2007-11-29
申请人： Zhong Qiang Hua , Rionard Purnawan , Jason Thomas Bloking , Anchuan Wang , Young S. Lee , Ellie Y. Yieh
发明人： Zhong Qiang Hua , Rionard Purnawan , Jason Thomas Bloking , Anchuan Wang , Young S. Lee , Ellie Y. Yieh
IPC分类号： B44C1/22
CPC分类号： C23C16/401 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31111 , H01L21/3145 , H01L21/31612
摘要： A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that includes reactive species from a mixture that includes NH3 and NF3. The etchant forms a solid reaction product with the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap with the high-density plasma.
摘要翻译：描述了使用高密度等离子体在衬底间隙中形成电介质材料的方法。该方法可以包括将电介质材料的第一部分沉积到具有高密度等离子体的间隙中。沉积可以形成至少部分地阻挡介电材料沉积到间隙中的突出结构。电介质材料的第一部分暴露于包括来自包括NH 3和N N 3 3的混合物的反应物质的蚀刻剂。蚀刻剂形成具有突出结构的固体反应产物，并且固体反应产物可以从基底上除去。介电材料的最终部分可以与高密度等离子体在间隙中沉积。

4. 发明申请

US20100095979A1 REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 失效
标题翻译：具有循环高低压清洁步骤的远程等离子清洁工艺
公开(公告)号：US20100095979A1
公开(公告)日：2010-04-22
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B7/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

5. 发明授权

US07967913B2 Remote plasma clean process with cycled high and low pressure clean steps 失效
标题翻译：远程等离子清洁工艺，循环高低压清洁步骤
公开(公告)号：US07967913B2
公开(公告)日：2011-06-28
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B6/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

6. 发明授权

US07572647B2 Internal balanced coil for inductively coupled high density plasma processing chamber 有权
标题翻译：用于电感耦合高密度等离子体处理室的内部平衡线圈
公开(公告)号：US07572647B2
公开(公告)日：2009-08-11
申请号：US11670728
申请日：2007-02-02
申请人： Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
发明人： Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
IPC分类号： H01L21/00
CPC分类号： C23C16/507 , H01J37/321 , H01J37/32174 , H01L21/02164 , H01L21/02274 , H01L21/31604 , H01L21/31608
摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.
摘要翻译：提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。线圈包括第一线圈段，第二线圈段和内部平衡电容器。第一线圈段具有第一端和第二端。线圈段的第一端适于连接到电源。第二线圈段具有第一和第二端。第一线圈段的第二端适于连接到外部平衡电容器。内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

7. 发明授权

US07141138B2 Gas delivery system for semiconductor processing 有权
公开(公告)号：US07141138B2
公开(公告)日：2006-11-28
申请号：US10630989
申请日：2003-07-28
申请人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
发明人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00
CPC分类号： H01L21/67017 , H01L21/67109
摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

8. 发明授权

US06812153B2 Method for high aspect ratio HDP CVD gapfill 有权
标题翻译：高宽比HDP CVD填隙方法
公开(公告)号：US06812153B2
公开(公告)日：2004-11-02
申请号：US10137132
申请日：2002-04-30
申请人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
发明人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
IPC分类号： H01L21302
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76229
摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
摘要翻译：一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

9. 发明授权

US08114761B2 Method for doping non-planar transistors 失效
标题翻译：掺杂非平面晶体管的方法
公开(公告)号：US08114761B2
公开(公告)日：2012-02-14
申请号：US12843726
申请日：2010-07-26
申请人： Tushar V. Mandrekar , Shankar Venkataraman , Zhong Qiang Hua , Manuel A. Hernandez
发明人： Tushar V. Mandrekar , Shankar Venkataraman , Zhong Qiang Hua , Manuel A. Hernandez
IPC分类号： H01L21/00
CPC分类号： H01L21/2256 , H01L29/66803
摘要： Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.
摘要翻译：公开了通过在非平面结构上形成共形掺杂的硅玻璃层来掺杂非平面结构的方法。将其上形成有非平面结构的基板放置在化学气相沉积处理室中以沉积掺杂玻璃（例如BSG或PSG）的共形SACVD层。然后将衬底暴露于RTP或激光退火步骤以将掺杂剂扩散到非平面结构中，然后通过蚀刻去除掺杂的玻璃层。

10. 发明授权

US06372291B1 In situ deposition and integration of silicon nitride in a high density plasma reactor 失效
标题翻译：氮化硅在高密度等离子体反应器中的原位沉积和整合
公开(公告)号：US06372291B1
公开(公告)日：2002-04-16
申请号：US09470561
申请日：1999-12-23
申请人： Zhong Qiang Hua , Kasra Khazeni
发明人： Zhong Qiang Hua , Kasra Khazeni
IPC分类号： C23C1600
CPC分类号： H01L21/02131 , C23C16/345 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/0234 , H01L21/02362 , H01L21/31629
摘要： A method of depositing a dielectric film on a substrate, comprising depositing a silicon oxide layer on the substrate; and treating the dielectric layer with oxygen. A layer of FSG having a fluorine content of greater than 7%, as measured by peak height ratio, deposited by HDP CVD, is treated with an oxygen plasma. The oxygen treatment stabilizes the film. In an alternative embodiment of the invention a thin (
摘要翻译：一种在衬底上沉积电介质膜的方法，包括在衬底上沉积氧化硅层; 并用氧气处理介电层。用氧等离子体处理通过HDP CVD沉积的通过峰高比测量的氟含量大于7％的FSG层。氧气处理使膜稳定。在本发明的替代实施例中，使用低压冲击将薄（<1000厚）的诸如氮化硅的材料层沉积在FSG层上。低压冲击可以通过建立工艺气体的流动来实现，使得腔室中的压力在5和100毫托之间，接通偏置电压足以建立弱等离子体的时间段，该等离子体可能是电容耦合的。在弱等离子体建立之后，源电压被接通，随后偏置电压被关断。使用低压冲击沉积的氮化硅层表现出良好的均匀性，强粘附性，并且抑制下层的脱气。

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