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    • 6. 发明申请
    • APPARATUS AND METHOD FOR PHASE CHANGE MEMORY DRIFT MANAGEMENT
    • 相位变化管理的设备和方法
    • US20140006696A1
    • 2014-01-02
    • US13994116
    • 2011-12-20
    • Raj K. RamanujanMark A. Schmisseur
    • Raj K. RamanujanMark A. Schmisseur
    • G06F12/02
    • G06F12/0246G06F12/0866G06F2212/214G11C13/0004G11C13/004G11C13/0061G11C16/3418G11C2013/0054G11C2013/0057
    • A system and method are described for selecting a demarcation voltage for read and write operations. Embodiments of the invention provide a scheme to use multiple VDMs to cover the case where power-on drift is different from power-off drift of the PCMS cells. The controller automatically manages this through tracking refreshes and writes. In addition, the embodiments of the invention provide an efficient scheme to reduce the performance impact of the penalty box following a write by tracking recent write addresses through a hash-table or similar scheme. By way of example, a method in accordance with one embodiment comprises: detecting a read operation directed to a first block of a PCMS memory; determining whether a write operation has previously occurred to the first block within a specified amount of time prior to the read operation; using a first demarcation voltage (VDM) for the read operation if the write operation has previously occurred to the first block within the specified amount of time prior to the write operation; and using a second VDM for the read operation if the write operation has not previously occurred to the first block within the specified amount of time prior to the write or refresh operation.
    • 描述了用于选择用于读取和写入操作的分界电压的系统和方法。 本发明的实施例提供了使用多个VDM来覆盖上电漂移与PCMS单元的断电漂移不同的情况的方案。 控制器通过跟踪刷新和写入自动进行管理。 此外,本发明的实施例提供了一种有效的方案,以通过通过散列表或类似方案跟踪最近的写入地址来减少写入之后的惩罚盒的性能影响。 作为示例,根据一个实施例的方法包括:检测针对PCMS存储器的第一块的读取操作; 在所述读取操作之前的指定时间内确定是否先前对所述第一块发生了写入操作; 如果在写操作之前的指定时间内先前已经对第一块发生写操作,则使用第一分界电压(VDM)作为读操作; 以及如果在所述写入或刷新操作之前的所述指定时间量内的所述第一块以前没有发生写入操作,则使用第二VDM进行所述读取​​操作。
    • 8. 发明授权
    • Apparatus and method for phase change memory drift management
    • 相变记忆漂移管理的装置和方法
    • US09286205B2
    • 2016-03-15
    • US13994116
    • 2011-12-20
    • Raj K. RamanujanMark A. Schmisseur
    • Raj K. RamanujanMark A. Schmisseur
    • G06F13/00G06F12/02G06F12/08G11C13/00G11C16/34
    • G06F12/0246G06F12/0866G06F2212/214G11C13/0004G11C13/004G11C13/0061G11C16/3418G11C2013/0054G11C2013/0057
    • A system and method are described for selecting a demarcation voltage for read and write operations. Embodiments of the invention provide a scheme to use multiple VDMs to cover the case where power-on drift is different from power-off drift of the PCMS cells. The controller automatically manages this through tracking refreshes and writes. In addition, the embodiments of the invention provide an efficient scheme to reduce the performance impact of the penalty box following a write by tracking recent write addresses through a hash-table or similar scheme. By way of example, a method in accordance with one embodiment comprises: detecting a read operation directed to a first block of a PCMS memory; determining whether a write operation has previously occurred to the first block within a specified amount of time prior to the read operation; using a first demarcation voltage (VDM) for the read operation if the write operation has previously occurred to the first block within the specified amount of time prior to the write operation; and using a second VDM for the read operation if the write operation has not previously occurred to the first block within the specified amount of time prior to the write or refresh operation.
    • 描述了用于选择用于读取和写入操作的分界电压的系统和方法。 本发明的实施例提供了使用多个VDM来覆盖上电漂移与PCMS单元的断电漂移不同的情况的方案。 控制器通过跟踪刷新和写入自动进行管理。 此外,本发明的实施例提供了一种有效的方案,以通过通过散列表或类似方案跟踪最近的写入地址来减少写入之后的惩罚盒的性能影响。 作为示例,根据一个实施例的方法包括:检测针对PCMS存储器的第一块的读取操作; 在所述读取操作之前的指定时间内确定是否先前对所述第一块发生了写入操作; 如果在写操作之前的指定时间内先前已经对第一块发生写操作,则使用第一分界电压(VDM)作为读操作; 以及如果在所述写入或刷新操作之前的所述指定时间量内的所述第一块以前没有发生写入操作,则使用第二VDM进行所述读取​​操作。
    • 10. 发明授权
    • Two-level system main memory
    • 二级系统主存
    • US08612676B2
    • 2013-12-17
    • US12976545
    • 2010-12-22
    • Eric J. DahlenGlenn J. HintonRaj K. Ramanujan
    • Eric J. DahlenGlenn J. HintonRaj K. Ramanujan
    • G06F12/00
    • G06F3/0611G06F3/0647G06F3/0685G06F11/0766G06F12/0246G06F12/0638G06F12/0868G06F12/0893G06F2212/1024G06F2212/313G06F2212/7203G06F2212/7208G06F2212/7209G06F2212/7211G11C14/009
    • Embodiments of the invention describe a system main memory comprising two levels of memory that include cached subsets of system disk level storage. This main memory includes “near memory” comprising memory made of volatile memory, and “far memory” comprising volatile or nonvolatile memory storage that is larger and slower than the near memory.The far memory is presented as “main memory” to the host OS while the near memory is a cache for the far memory that is transparent to the OS, thus appearing to the OS the same as prior art main memory solutions. The management of the two-level memory may be done by a combination of logic and modules executed via the host CPU. Near memory may be coupled to the host system CPU via high bandwidth, low latency means for efficient processing. Far memory may be coupled to the CPU via low bandwidth, high latency means.
    • 本发明的实施例描述了包括两级存储器的系统主存储器,其包括系统盘级存储器的缓存子集。 该主存储器包括包括由易失性存储器构成的存储器的“近存储器”,以及包括比近存储器更大和更慢的易失性或非易失性存储器存储器的“远存储器”。 远端存储器被呈现为主机OS的“主存储器”,而近端存储器是对于对OS是透明的远存储器的高速缓存,因此与OS显示与现有技术主存储器解决方案相同的高速缓存。 两级存储器的管理可以通过经由主机CPU执行的逻辑和模块的组合来完成。 靠近存储器可以通过高带宽,低延迟的方式耦合到主机系统CPU,用于有效处理。 远存储器可以经由低带宽,高延迟装置耦合到CPU。