专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120146054A1 MOSFET WITH SOURCE SIDE ONLY STRESS 有权
标题翻译： MOSFET，源极只有应力
公开(公告)号：US20120146054A1
公开(公告)日：2012-06-14
申请号：US13288170
申请日：2011-11-03
申请人： Samuel Zafar Nawaz , Shaofeng Yu , Jeffrey E. Brighton , Song Zhao
发明人： Samuel Zafar Nawaz , Shaofeng Yu , Jeffrey E. Brighton , Song Zhao
IPC分类号： H01L29/772 , H01L21/336 , H01L21/20
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66636 , H01L29/66659 , H01L29/7835
摘要： An integrated circuit contains a transistor with a stress enhancement region on the source side only. In a DeMOS transistor, forming the stress enhancement region on the source side only and not forming a stress enhancement region in the drain extension increases the resistance of the drain extension region enabling formation of a DeMOS transistor with reduced area. In a MOS transistor, by forming the stress enhancement region on the source side only and eliminating the stress enhancement region from the drain side, transistor leakage is reduced and CHC reliability improved.
摘要翻译：集成电路仅包含源极侧的应力增强区域的晶体管。在DeMOS晶体管中，仅在源极上形成应力增强区域并且在漏极延伸中不形成应力增强区域增加了漏极延伸区域的电阻，从而能够形成减小面积的DeMOS晶体管。在MOS晶体管中，通过在源极侧形成应力增强区域，消除来自漏极侧的应力增强区域，降低了晶体管泄漏，提高了CHC可靠性。

2. 发明授权

US08928047B2 MOSFET with source side only stress 有权
标题翻译： MOSFET源极只有应力
公开(公告)号：US08928047B2
公开(公告)日：2015-01-06
申请号：US13288170
申请日：2011-11-03
申请人： Samuel Zafar Nawaz , Shaofeng Yu , Jeffrey E. Brighton , Song Zhao
发明人： Samuel Zafar Nawaz , Shaofeng Yu , Jeffrey E. Brighton , Song Zhao
IPC分类号： H01L29/772 , H01L21/336 , H01L21/20 , H01L29/78 , H01L29/165 , H01L29/66
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66636 , H01L29/66659 , H01L29/7835
摘要： An integrated circuit contains a transistor with a stress enhancement region on the source side only. In a DeMOS transistor, forming the stress enhancement region on the source side only and not forming a stress enhancement region in the drain extension increases the resistance of the drain extension region enabling formation of a DeMOS transistor with reduced area. In a MOS transistor, by forming the stress enhancement region on the source side only and eliminating the stress enhancement region from the drain side, transistor leakage is reduced and CHC reliability improved.
摘要翻译：集成电路仅包含源极侧的应力增强区域的晶体管。在DeMOS晶体管中，仅在源极上形成应力增强区域并且在漏极延伸中不形成应力增强区域增加了漏极延伸区域的电阻，从而能够形成减小面积的DeMOS晶体管。在MOS晶体管中，通过在源极侧形成应力增强区域，消除来自漏极侧的应力增强区域，降低晶体管泄漏，提高CHC可靠性。

3. 发明授权

US08993575B2 [1,3,4] oxadiazole derivative and application thereof 有权
标题翻译： [1,3,4]恶二唑衍生物及其应用
公开(公告)号：US08993575B2
公开(公告)日：2015-03-31
申请号：US14008693
申请日：2012-04-01
申请人： Guisen Zhang , Yin Chen , Xiangqing Xu , Bifeng Liu , Xiaojun Feng , Song Zhao , Shicheng Liu , Minquan Yu , Yu Lan , Yinli Qiu
发明人： Guisen Zhang , Yin Chen , Xiangqing Xu , Bifeng Liu , Xiaojun Feng , Song Zhao , Shicheng Liu , Minquan Yu , Yu Lan , Yinli Qiu
IPC分类号： A61K31/496 , A61K31/454 , A61K31/4545 , C07D413/14 , C07D417/12 , C07D417/14
CPC分类号： C07D417/12 , C07D413/14 , C07D417/14
摘要： The present invention belongs to the medicinal chemistry field, and specifically discloses a [1,3,4]oxadiazole derivative with the structure of general formula (I) and pharmaceutically acceptable salt thereof. The compound can be used to prepare a medicine for preventing or treating a disease of the central nervous system.
摘要翻译：本发明属于药物化学领域，具体公开了具有通式（I）结构的[1,3,4]恶二唑衍生物及其药学上可接受的盐。该化合物可用于制备用于预防或治疗中枢神经系统疾病的药物。

4. 发明授权

US08717405B2 Method and device for generating 3D panoramic video streams, and videoconference method and device 有权
标题翻译：用于生成3D全景视频流的方法和设备，以及视频会议方法和设备
公开(公告)号：US08717405B2
公开(公告)日：2014-05-06
申请号：US13172193
申请日：2011-06-29
申请人： Kai Li , Yuan Liu , Jing Wang , Honghong Su , Song Zhao
发明人： Kai Li , Yuan Liu , Jing Wang , Honghong Su , Song Zhao
IPC分类号： H04N7/14
CPC分类号： H04N21/4223 , H04N7/15 , H04N13/243 , H04N21/42203 , H04N21/4788
摘要： A method and a device for generating 3-dimensional (3D) panoramic video streams, a videoconference method, and a videoconference device are disclosed. The method includes: obtaining depth information of at least two video images; obtaining image data in multiple depth positions from a corresponding video image according to the depth information of each video image; stitching data of the video images according to the obtained image data in multiple depth positions, and generating 3D panoramic video streams. The technical solution of the present invention provides users with high-resolution 3D panoramic seamless telepresence conference video images based on different display modes of different display devices.
摘要翻译：公开了一种用于产生三维（3D）全景视频流的方法和装置，视频会议方法和视频会议装置。该方法包括：获取至少两个视频图像的深度信息; 根据每个视频图像的深度信息从相应的视频图像获得多个深度位置的图像数据; 根据所获得的多个深度位置的图像数据拼接视频图像的数据，并生成3D全景视频流。本发明的技术方案为用户提供了基于不同显示设备的不同显示模式的高分辨率3D全景无线远程呈现会议视频图像。

5. 发明授权

US08355062B2 Method and apparatus for processing image 有权
标题翻译：图像处理方法及装置
公开(公告)号：US08355062B2
公开(公告)日：2013-01-15
申请号：US13189058
申请日：2011-07-22
申请人： Song Zhao , Jing Wang , Yuan Liu , Kai Li
发明人： Song Zhao , Jing Wang , Yuan Liu , Kai Li
IPC分类号： H04N5/262 , G06K9/32
CPC分类号： G06T15/20 , G06T3/0012
摘要： A method for processing an image includes: obtaining depth values of an image including a target region and a non-target region; obtaining a scaling ratio of the target region; obtaining a scaling ratio of the non-target region according to the depth values of the image and the scaling ratio of the target region; scaling respectively the target region and the non-target region according to the scaling ratio of the target region and the scaling ratio of the non-target region, and obtaining a scaled image.
摘要翻译：一种处理图像的方法包括：获得包括目标区域和非目标区域的图像的深度值; 获得目标区域的缩放比例; 根据图像的深度值和目标区域的缩放比例获得非目标区域的缩放比例; 根据目标区域的缩放比率和非目标区域的缩放比例，分别对目标区域和非目标区域进行缩放，并获得缩放图像。

6. 发明授权

US09315496B2 Benzopyrone derivative and use thereof 有权
标题翻译：苯并吡喃酮衍生物及其用途
公开(公告)号：US09315496B2
公开(公告)日：2016-04-19
申请号：US14009581
申请日：2012-04-06
申请人： Guisen Zhang , Yin Chen , Xiangqing Xu , Bifeng Liu , Xin Liu , Song Zhao , Shicheng Liu , Minquan Yu , Heng Zhang , Xinghua Liu
发明人： Guisen Zhang , Yin Chen , Xiangqing Xu , Bifeng Liu , Xin Liu , Song Zhao , Shicheng Liu , Minquan Yu , Heng Zhang , Xinghua Liu
IPC分类号： A61K31/496 , A61K31/454 , C07D405/12 , C07D405/14 , C07D413/12 , C07D413/14 , C07D417/12 , C07D417/14
CPC分类号： C07D417/12 , A61K31/454 , A61K31/496 , C07D405/12 , C07D405/14 , C07D413/12 , C07D413/14 , C07D417/14
摘要： The present invention relates to the field of pharmaceutical chemistry, and in particular, to a benzopyrone derivative and a use thereof. The benzopyrone derivative is compound having a structure of formula (I) or a pharmaceutically acceptable salt thereof. It has been found by experiments that, this type of compounds is useful in prevention or treatment of neuropsychical diseases.
摘要翻译：本发明涉及药物化学领域，特别涉及苯并吡喃酮衍生物及其应用。苯并吡喃酮衍生物是具有式（I）结构的化合物或其药学上可接受的盐。通过实验发现，这种类型的化合物可用于预防或治疗神经精神疾病。

7. 发明申请

US20110273594A1 METHOD AND APPARATUS FOR PROCESSING IMAGE 有权
标题翻译：用于处理图像的方法和装置
公开(公告)号：US20110273594A1
公开(公告)日：2011-11-10
申请号：US13189058
申请日：2011-07-22
申请人： Song Zhao , Jing Wang , Yuan Liu , Kai Li
发明人： Song Zhao , Jing Wang , Yuan Liu , Kai Li
IPC分类号： H04N5/262 , G06K9/32
CPC分类号： G06T15/20 , G06T3/0012
摘要： A method for processing an image includes: obtaining depth values of an image including a target region and a non-target region; obtaining a scaling ratio of the target region; obtaining a scaling ratio of the non-target region according to the depth values of the image and the scaling ratio of the target region; scaling respectively the target region and the non-target region according to the scaling ratio of the target region and the scaling ratio of the non-target region, and obtaining a scaled image.
摘要翻译：一种处理图像的方法包括：获得包括目标区域和非目标区域的图像的深度值; 获得目标区域的缩放比例; 根据图像的深度值和目标区域的缩放比例获得非目标区域的缩放比例; 根据目标区域的缩放比率和非目标区域的缩放比例，分别对目标区域和非目标区域进行缩放，并获得缩放图像。

8. 发明授权

US07897496B2 Semiconductor doping with reduced gate edge diode leakage 有权
标题翻译：半导体掺杂减少了栅极边缘二极管泄漏
公开(公告)号：US07897496B2
公开(公告)日：2011-03-01
申请号：US11941129
申请日：2007-11-16
申请人： Puneet Kohli , Nandakumar Mahalingam , Manoj Mehrotra , Song Zhao
发明人： Puneet Kohli , Nandakumar Mahalingam , Manoj Mehrotra , Song Zhao
IPC分类号： H01L21/425
CPC分类号： H01L21/26513 , H01L21/26506 , H01L29/165 , H01L29/6659 , H01L29/7833
摘要： Semiconductor doping techniques, along with related methods and structures, are disclosed that produce components having a more tightly controlled source and drain extension region dopant profiles without significantly inducing gate edge diode leakage. The technique follows the discovery that carbon, which may be used as a diffusion suppressant for dopants such as boron, may produce a gate edge diode leakage if present in significant quantities in the source and drain extension regions. As an alternative to placing carbon in the source and drain extension regions, carbon may be placed in the source and drain regions, and the thermal anneal used to activate the dopant may be relied upon to diffuse a small concentration of the carbon into the source and drain extension regions, thereby suppressing dopant diffusion in these regions without significantly inducing gate edge diode leakage. The increased concentration of carbon in the source and drain regions may permit heavier doping of the source/drain region, leading to improved gate capacitance.
摘要翻译：公开了半导体掺杂技术以及相关方法和结构，其产生具有更紧密控制的源极和漏极延伸区掺杂物分布而不显着引起栅极边缘二极管泄漏的元件。该技术遵循发现，可以用作掺杂剂如硼的扩散抑制剂的碳可能在源极和漏极延伸区域中以大量存在而产生栅极边缘二极管泄漏。作为在源极和漏极延伸区域中放置碳的替代方案，可以将碳放置在源极和漏极区域中，并且可以依靠用于激活掺杂剂的热退火将碳的少量浓度扩散到源中，漏极延伸区域，从而抑制这些区域中的掺杂剂扩散，而不会显着引起栅极边缘二极管泄漏。源极和漏极区域中增加的碳浓度可能允许源极/漏极区域的较重掺杂，导致改善的栅极电容。

9. 发明授权

US07678637B2 CMOS fabrication process 有权
标题翻译： CMOS制作工艺
公开(公告)号：US07678637B2
公开(公告)日：2010-03-16
申请号：US12209270
申请日：2008-09-12
申请人： Mahalingam Nandakumar , Song Zhao , Amitabh Jain
发明人： Mahalingam Nandakumar , Song Zhao , Amitabh Jain
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L21/823814 , H01L29/1087 , H01L29/7847
摘要： Ultra high temperature (UHT) anneals above 1200 C for less than 100 milliseconds for PMOS transistors reduce end of range dislocations, but are incompatible with stress memorization technique (SMT) layers used to enhance NMOS on-state current. This invention reverses the conventional order of forming the NMOS first by forming PSD using carbon co-implants and UHT annealing them before implanting the NSD and depositing the SMT layer. End of range dislocation densities in the PSD space charge region below 100 cm−2 are achieved. Tensile stress in the PMOS from the SMT layer is significantly reduced. The PLDD may also be UHT annealed to reduce end of range dislocations close to the PMOS channel.
摘要翻译：对于PMOS晶体管，超高温（UHT）超过1200℃退火少于100毫秒会减少范围位错的终止，但与用于增强NMOS导通电流的应力记忆技术（SMT）层不兼容。本发明首先通过使用碳共注入形成PSD并且在植入NSD并沉积SMT层之前对其进行UHT退火来逆转形成NMOS的常规顺序。实现了低于100cm-2的PSD空间电荷区域的范围位错密度的结束。来自SMT层的PMOS中的拉伸应力显着降低。 PLDD还可以进行UHT退火以减少靠近PMOS沟道的范围位错的结束。

10. 发明授权

US06855984B1 Process to reduce gate edge drain leakage in semiconductor devices 有权
标题翻译：降低半导体器件漏极漏极的工艺
公开(公告)号：US06855984B1
公开(公告)日：2005-02-15
申请号：US10697510
申请日：2003-10-30
申请人： Zhiqiang Wu , Shaoping Tang , Song Zhao
发明人： Zhiqiang Wu , Shaoping Tang , Song Zhao
IPC分类号： H01L21/336 , H01L21/8238 , H01L29/10 , H01L29/78 , H01L29/76
CPC分类号： H01L29/6659 , H01L21/823807 , H01L21/823842 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/6656 , H01L29/7833
摘要： The present invention employs a no mask, blanket implant of an n-type implant after formation of active regions in NMOS devices. As a result, the implanted n-type dopants counteract portions of strongly p-type HALO or pocket regions creating a smoother dopant profile or transition from a portion of the active regions to the channel. However, the blanket implant is performed at a relatively low energy so as to not significantly alter one or more other portions of the active regions to other portions of the device.
摘要翻译：本发明在NMOS器件中形成有源区之后采用n型注入的无掩模，覆盖式注入。结果，注入的n型掺杂剂抵消了强p型HALO或凹坑区域的部分，从而产生了更平滑的掺杂物分布或从有源区域的一部分到沟道的转变。然而，橡皮布注入在相对较低的能量下进行，以便不会将活性区的一个或多个其它部分显着地改变到该装置的其它部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式