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1. 发明申请

US20090071394A1 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE 审中-公开
标题翻译： Al x In y Ga 1-x-y N混合晶体衬底，生长Al x In y Ga 1-x-y N混合晶体衬底的方法和生产Al x In y Ga 1-x-y N混合晶体衬底的方法
公开(公告)号：US20090071394A1
公开(公告)日：2009-03-19
申请号：US12273250
申请日：2008-11-18
申请人： Seiji NAKAHATA , Ryu HIROTA , Kensaku MOTOKI , Takuji OKAHISA , Koji UEMATSU
发明人： Seiji NAKAHATA , Ryu HIROTA , Kensaku MOTOKI , Takuji OKAHISA , Koji UEMATSU
IPC分类号： C30B1/00
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density AlxInyGa1-x-yN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an AlxInyGa1-x-yN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：低位错密度Al x In y Ga 1-x-y N单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长Al x In y Ga 1-x-y N晶体，形成平行面的重复保留小平面山谷和小平面谷，产生伴随谷的大量缺陷积聚区（H），产生小面后的低位错单晶区（Z），使C平面生长区（ Y）在平面之后，通过生长小面的作用将小平面上的小平面上的位错收集到谷中，减少低位错单晶区域（Z）和C平面生长区域（Y）中的位错，并累积大量缺陷积聚区域（H）的芯（S）或界面（K）中的位错。

2. 发明申请

US20100009526A1 FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE 有权
标题翻译：第III组氮化物晶体的制造方法和制造装置
公开(公告)号：US20100009526A1
公开(公告)日：2010-01-14
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi KASAI , Takuji OKAHISA , Shunsuke FUJITA , Naoki MATSUMOTO , Hideyuki IJIRI , Fumitaka SATO , Kensaku MOTOKI , Seiji NAKAHATA , Koji UEMATSU , Ryu HIROTA
发明人： Hitoshi KASAI , Takuji OKAHISA , Shunsuke FUJITA , Naoki MATSUMOTO , Hideyuki IJIRI , Fumitaka SATO , Kensaku MOTOKI , Seiji NAKAHATA , Koji UEMATSU , Ryu HIROTA
IPC分类号： H01L21/203
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

3. 发明申请

US20090215248A1 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME 失效
标题翻译： Al x In y Ga 1-x-y N混合晶体基板及其制造方法及其制造方法
公开(公告)号：US20090215248A1
公开(公告)日：2009-08-27
申请号：US12431063
申请日：2009-04-28
申请人： Seiji NAKAHATA , Ryu HIROTA , Kensaku MOTOKI , Takuji OKAHISA , Kouji UEMATSU
发明人： Seiji NAKAHATA , Ryu HIROTA , Kensaku MOTOKI , Takuji OKAHISA , Kouji UEMATSU
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0
摘要翻译：将种子以规则的图案植入到下衬底上。通过小面生长法在种子植入的底层上生长Al x In y Ga 1-x-y N（0 <= x <= 1,0 <= y <= 1,0

4. 发明申请

US20120040511A1 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME 有权
标题翻译： Al x In y Ga 1-x-y N混合晶体基板及其制造方法及其制造方法
公开(公告)号：US20120040511A1
公开(公告)日：2012-02-16
申请号：US13281106
申请日：2011-10-25
申请人： Seiji NAKAHATA , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
发明人： Seiji NAKAHATA , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
IPC分类号： H01L21/322
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, 0
摘要翻译：将种子以规则的图案植入到下衬底上。通过小平面生长法在混合晶体生长在种子植入的底层基底上，使Al x In y Ga 1-x-y N（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0

5. 发明申请

US20090189253A1 METHOD OF PRODUCING A NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：生产氮化物半导体器件和氮化物半导体器件的方法
公开(公告)号：US20090189253A1
公开(公告)日：2009-07-30
申请号：US12409752
申请日：2009-03-24
申请人： Seiji NAKAHATA , Koji Uematsu , Hideaki Nakahata
发明人： Seiji NAKAHATA , Koji Uematsu , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/78
CPC分类号： H01L21/7813 , H01L21/02389 , H01L21/0254 , H01L21/02609 , H01L21/02647 , H01L29/2003 , H01L29/34 , H01L29/66462 , H01L29/7787 , H01L29/872 , H01L33/007 , H01L33/0079
摘要： AlxInyGa1-x-yN(0≦x≦1; 0≦x≦1; 0≦x+y≦1) layered device chips are produced by the steps of preparing a defect position controlled substrate of AlxInyGa1-x-yN(0≦x≦1; 0≦y≦1; 0≦x+y≦1) having a closed loop network defect accumulating region H of slow speed growth and low defect density regions ZY of high speed growth enclosed by the closed loop network defect accumulating region H, growing epitaxial upper layers B selectively on the low defect density regions ZY, harmonizing outlines and insides of device chips composed of the upper layers B with the defect accumulating region H and the low defect density regions ZY respectively, forming upper electrodes on the upper layers B or not forming the electrodes, dissolving bottom parts of the upper layers B by laser irradiation or mechanical bombardment, and separating the upper layer parts B as device chips C from each other and from the substrate S. Chip-separation is done instantly by the high power laser irradiation or mechanical shock without cutting the substrate S. The defect position controlled substrate S is repeatedly reused.
摘要翻译： Al x In y Ga 1-x-y N（0 <= x <= 1; 0 <= x <= 1; 0 <= x + y <= 1）层状器件芯片是通过以下步骤制备的：具有慢速生长的闭环网络缺陷累积区域H和低缺陷密度区域ZY的x-yN（0 <= x <= 1; 0 <= y <= 1; 0 <= x + y < 由闭环网络缺陷积聚区域H包围的高速生长，选择性地在低缺陷密度区域ZY上生长外延上层B，使由上层B构成的器件芯片的缺陷累积区域H和低缺陷密度区域ZY，在上层B上形成上层电极或不形成电极，通过激光照射或机械轰击溶解上层B的底部，并将上层部件B作为器件芯片C彼此分离，通过高功率激光照射或机械sh即时完成芯片分离不切割基板S.缺陷位置控制的基板S被反复重复使用。

6. 发明申请

US20110121311A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体衬底的方法，制造半导体器件的方法，半导体衬底和半导体器件
公开(公告)号：US20110121311A1
公开(公告)日：2011-05-26
申请号：US12943545
申请日：2010-11-10
申请人： Fumitaka SATO , Akihiro HACHIGO , Naoki MATSUMOTO , Yoko MAEDA , Seiji NAKAHATA
发明人： Fumitaka SATO , Akihiro HACHIGO , Naoki MATSUMOTO , Yoko MAEDA , Seiji NAKAHATA
IPC分类号： H01L29/12 , H01L21/18
CPC分类号： H01L21/2654 , H01L21/76254 , H01L29/045 , H01L29/2003 , H01L29/66143 , H01L29/872
摘要： The present invention provides a method for manufacturing a semiconductor substrate including a low-resistance nitride layer laminated on a substrate, a method for manufacturing a semiconductor device, a semiconductor substrate, and a semiconductor device. A method for manufacturing a semiconductor substrate of the present invention includes the following steps: A nitride substrate having a principal surface and a back surface opposite to the principal surface is prepared. Vapor-phase ions are implanted into the back surface of the nitride substrate. The back surface of the nitride substrate is bonded to a dissimilar substrate to form a bonded substrate. The nitride substrate is partially separated from the bonded substrate to form a laminated substrate including the dissimilar substrate and a nitride layer. The laminated substrate is heat-treated at a temperature over 700° C.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该半导体衬底包括层叠在衬底上的低电阻氮化物层，半导体器件的制造方法，半导体衬底和半导体器件。本发明的半导体衬底的制造方法包括以下步骤：准备具有与主面相反的主面和背面的氮化物衬底。气相离子注入到氮化物衬底的背表面中。氮化物衬底的背面与不同的衬底接合以形成键合衬底。氮化物衬底与键合衬底部分地分离以形成包括不同衬底和氮化物层的叠层衬底。层压基板在700℃以上的温度下进行热处理

7. 发明申请

US20120118226A1 Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate 审中-公开
标题翻译：合成氮化物半导体单晶基板的方法
公开(公告)号：US20120118226A1
公开(公告)日：2012-05-17
申请号：US13350095
申请日：2012-01-13
申请人： Shinsuke FUJIWARA , Seiji NAKAHATA
发明人： Shinsuke FUJIWARA , Seiji NAKAHATA
IPC分类号： C30B25/10
CPC分类号： C30B25/08 , C30B25/02 , C30B29/403
摘要： Fracture toughness of AlGaN single-crystal substrate is improved and its absorption coefficient reduced. A nitride semiconductor single-crystal substrate has a composition represented by the formula AlxGa1-xN (0≦x≦1), and is characterized by having a fracture toughness of (1.2−0.7x) MPa•m1/2 or greater and a surface area of 20 cm2, or, if the substrate has a composition represented by the formula AlxGa1-xN (0.5≦x≦1), by having an absorption coefficient of 50 cm−1 or less in a 350 to 780 nm total wavelength range.
摘要翻译： AlGaN单晶衬底的断裂韧性提高，吸收系数降低。氮化物半导体单晶衬底具有由式Al x Ga 1-x N（0＆nlE; x＆nlE; 1）表示的组成，其特征在于具有（1.2-0.7x）MPa·m1 / 2以上的断裂韧性和表面或者如果基板具有由式Al x Ga 1-x N（0.5＆nlE; x＆nlE; 1）表示的组成，则通过在350至780nm的总波长范围内具有50cm -1以下的吸收系数。

8. 发明申请

US20100314625A1 GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture 有权
标题翻译： GaN单晶体及其制造方法，半导体器件及其制造方法
公开(公告)号：US20100314625A1
公开(公告)日：2010-12-16
申请号：US12797617
申请日：2010-06-10
申请人： Hideaki NAKAHATA , Shinsuke FUJIWARA , Takashi SAKURADA , Yoshiyuki YAMAMOTO , Seiji NAKAHATA , Tomoki UEMURA
发明人： Hideaki NAKAHATA , Shinsuke FUJIWARA , Takashi SAKURADA , Yoshiyuki YAMAMOTO , Seiji NAKAHATA , Tomoki UEMURA
IPC分类号： H01L29/20 , H01L21/20 , C01B21/06 , C30B23/00
CPC分类号： H01L29/872 , C30B25/00 , C30B29/406 , H01L21/02008 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205
摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.
摘要翻译：提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。

9. 发明申请

US20120094473A1 GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译： III族氮化物衬底，外延层基板，其制造方法和制造半导体器件的方法
公开(公告)号：US20120094473A1
公开(公告)日：2012-04-19
申请号：US13336242
申请日：2011-12-23
申请人： Keiji ISHIBASHI , Akihiro HACHIGO , Masato IRIKURA , Seiji NAKAHATA
发明人： Keiji ISHIBASHI , Akihiro HACHIGO , Masato IRIKURA , Seiji NAKAHATA
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C30B29/406 , C30B33/00 , H01L21/02024 , H01L33/16 , H01L33/32
摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×1013, and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and a haze level of the surface (3) is not more than 5 ppm.
摘要翻译：可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底（1）是以下之一：III族氮化物衬底，其中每平方厘米表面（3）的酸性材料的原子数不大于2×1014，并且硅原子数每平方厘米的表面（3）不大于3×1013; III族氮化物衬底，其中每平方厘米表面（3）的硅原子数不大于3×1013，并且表面（3）的雾度不大于5ppm; 和III族氮化物衬底，其中每平方厘米表面（3）的酸性材料的原子数不大于2×1014，并且表面（3）的雾度水平不大于5ppm。

10. 发明申请

US20100123168A1 NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物晶体，氮化物晶体衬底，含氮化物晶体衬底，半导体器件及其制造方法
公开(公告)号：US20100123168A1
公开(公告)日：2010-05-20
申请号：US12635490
申请日：2009-12-10
申请人： Keiji ISHIBASHI , Tokiko KAJI , Seiji NAKAHATA , Takayuki NISHIURA
发明人： Keiji ISHIBASHI , Tokiko KAJI , Seiji NAKAHATA , Takayuki NISHIURA
IPC分类号： H01L33/00 , H01L29/20
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.
摘要翻译：氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底，含氮化物晶体基板，半导体装置及其制造方法。

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