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1. 发明专利

JP2012149338A Magnet unit and magnetron sputtering apparatus 有权
标题翻译： MAGNET UNIT和MAGNETRON SPUTTERING APPARATUS
公开(公告)号：JP2012149338A
公开(公告)日：2012-08-09
申请号：JP2011205736
申请日：2011-09-21
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ENDO TETSUYA , ABARA EINSTEIN NOEL
IPC分类号： C23C14/35 , H01L21/285
CPC分类号： H01J37/3452 , H01F7/0278 , H01J37/3405 , H01J37/345 , H01J37/347
摘要： PROBLEM TO BE SOLVED: To provide a magnet unit which can generate a wavy magnetic track on a target, with sufficient magnetic field intensity.SOLUTION: The magnet unit comprises: a first magnet element equipped with a first magnet provided to stand upright on a yoke plate, a second magnet provided to stand upright on the yoke plate and having a magnetic pole repulsing the first magnet and a third magnet provided with a tilt between the first magnet and the second magnet; and a second magnet element equipped with a fourth magnet provided to stand upright on the yoke plate, a fifth magnet provided to stand upright on the yoke plate and having a magnetic pole repulsing the fourth magnet, and a sixth magnet provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape.
摘要翻译：要解决的问题：提供一种能够在靶上产生具有足够的磁场强度的波状磁道的磁体单元。解决方案：磁体单元包括：第一磁体元件，其配备有设置成直立在磁轭板上的第一磁体;第二磁体，设置成直立在磁轭板上并具有使第一磁体和第一磁体排斥的磁极; 在所述第一磁体和所述第二磁体之间设置有倾斜的第三磁体; 以及配备有第四磁体的第二磁体元件，其设置成直立在所述磁轭板上;第五磁体，被设置成直立在所述磁轭板上，并具有使所述第四磁体排斥的磁极;以及第六磁体，第四磁体和第五磁体。第一磁体元件和第二磁体元件交替排列成环形。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012140672A Sputtering apparatus 审中-公开
标题翻译：溅射装置
公开(公告)号：JP2012140672A
公开(公告)日：2012-07-26
申请号：JP2010293523
申请日：2010-12-28
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ENDO TETSUYA , OKADA ERIKO , MATSUO RYOSUKE , FUJIMOTO TAKESHI , YAMANAKA MASAHIRO , IIZUKA KENTARO
IPC分类号： C23C14/34 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To provide a sputtering apparatus superior in cooling performance.SOLUTION: The sputtering apparatus includes: a target electrode; a substrate holding stage 107 including a recessed part for forming a space between a placing part for placing a substrate W and the substrate placed on the placing part; a supply source for supplying a coolant gas into the recessed part; a holding member for exerting a pressing force therebetween with the substrate holding stage to fix the substrate onto the substrate holding stage; a freezing machine 108 connected to the substrate holding stage; and a rotary drive device for rotating the substrate holding stage together with the freezing machine.
摘要翻译：要解决的问题：提供优异的冷却性能的溅射装置。解决方案：溅射装置包括：目标电极; 衬底保持台107，包括用于在放置衬底W的放置部件和放置在放置部件上的衬底之间形成空间的凹部; 用于将冷却剂气体供应到所述凹部中的供应源; 用于在其间施加压力的保持构件，其具有衬底保持台以将衬底固定到衬底保持台上; 连接到基板保持台的冷冻机108; 以及用于与冷冻机一起旋转基板保持台的旋转驱动装置。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011090759A Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium 有权
标题翻译：磁性传感器堆叠体，其形成方法，成膜控制程序和记录介质
公开(公告)号：JP2011090759A
公开(公告)日：2011-05-06
申请号：JP2010149407
申请日：2010-06-30
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ABARA EINSTEIN NOEL , SUENAGA MASAHIRO , OTA YOSHINORI , ENDO TETSUYA
IPC分类号： G11B5/39 , G01R33/09 , H01F10/32 , H01F41/18 , H01F41/34 , H01L43/08 , H01L43/12
CPC分类号： G11B5/3932 , G01R33/098 , G11B5/3163 , G11B5/398 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To align crystal c-axes in magnetic layers near two opposed junction wall faces of a magneto-resistive element so as to be almost perpendicular to the junction wall faces.
SOLUTION: The magnetic sensor stack body 1 has, on a substrate 31, a magnetoresistive element 10 whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces 10a, 10b of the magneto-resistive element 10, field regions 22 including magnetic layers 22a, 22b for applying the bias magnetic field to the element 10. The magnetoresistive element 10 has at least a ferromagnetic stack 18 on a part of an antiferromagnetic layer 13, and a width W
F of an uppermost face of the ferromagnetic stack 18 along a direction in which the junction wall faces 10a, 10b are opposed to each other is formed smaller than a width W
A of an uppermost face of the anti-ferromagnetic layer 13 along the same direction.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：将磁性层中的晶体c轴对准磁阻元件的两个相对的接合壁面附近，以便几乎垂直于接合壁面。解决方案：磁传感器堆叠体1在基板31上具有磁阻元件10，磁阻元件10在施加偏置磁场时电阻波动，并且在磁阻的相对的接合面10a，10b的侧面元件10，包括用于向元件10施加偏置磁场的磁性层22a，22b的场区22.磁阻元件10至少在反铁磁性层13的一部分上具有铁磁性堆叠18，宽度W 铁磁性叠层体18的最上面的表面沿着连接面10a，10b的方向彼此相对的方向F 形成为比最上面的宽度W SB> A < 的反铁磁层13。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010150668A Magnet unit, and magnetron sputtering device 有权
标题翻译： MAGNET UNIT和MAGNETRON SPUTTERING DEVICE
公开(公告)号：JP2010150668A
公开(公告)日：2010-07-08
申请号：JP2010041259
申请日：2010-02-26
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ENDO TETSUYA , ABARRA EINSTEIN NOEL
IPC分类号： C23C14/35 , H05H1/46
CPC分类号： C23C14/35 , H01J37/3405 , H01J37/3452
摘要： PROBLEM TO BE SOLVED: To provide a magnet unit which can homogenize the thickness distribution of a thin film to be formed on a substrate, without increasing the length and width of a target. SOLUTION: The magnet unit 50 comprises an annular outer magnet 30 arranged over a yoke 20 on the back side of a cathode electrode and along the contour of a target 6, and an inner magnet 40 arranged in the annular outer magnet and made different in polarity from the outer magnet, whereby the tangents of magnetic lines of force M generated over the target form the magnetic tracks MT of a set of areas parallel to the target face. The magnet unit also comprises extending magnetic poles 41 of an n-number (n indicates a positive integer of 2 or more) extending from the central portion of the inner magnet and approaching the two longitudinal ends of the outer magnet, and protruding magnetic poles 32 of a (n-1)-number protruding longitudinally inward from the inner sides of the two ends of the outer magnet and positioned between the extending magnetic poles of the n-number. The extending magnetic poles of the n-number and the protruding magnetic poles of the (n-1)-number form folded-back sections U of a (2n-1)-number at the two longitudinal ends of the magnetic track. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁体单元，其能够均匀化待形成在基板上的薄膜的厚度分布，而不增加靶的长度和宽度。解决方案：磁体单元50包括环形外磁体30，其设置在阴极背面上的磁轭20上，并且沿着目标6的轮廓和布置在环形外磁体中的内磁体40 与外部磁体的极性不同，由此在目标上产生的磁力线M的切线形成平行于目标面的一组区域的磁迹MT。磁体单元还包括从内磁体的中心部分延伸并接近外磁体的两个纵向端的n数（n表示正整数为2或更大的）的磁极41，并且突出的磁极32 （n-1）个数从外磁体的两端的内侧向内侧突出并且位于n数的延伸磁极之间。在磁道的两个纵向端处，（n-1）个数字的n-1个延伸磁极和（n-1）个数字形式的折叠部分U（2n-1）数。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2012012700A Magnet unit and magnetron sputtering device 有权
标题翻译：磁铁单元和磁控溅射装置
公开(公告)号：JP2012012700A
公开(公告)日：2012-01-19
申请号：JP2011045032
申请日：2011-03-02
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ENDO TETSUYA , ABARA EINSTEIN NOEL
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , H01J37/3452
摘要： PROBLEM TO BE SOLVED: To provide a magnet unit that can easily and equally proceed with corrosion on a target.SOLUTION: The magnet unit of the magnetron sputtering device is provided with a yoke 412 made of a ferromagnetic plate material and disposed on the back side of a cathode electrode which supports the target, a ring-like external magnet unit 402 disposed on the yoke, an interior magnet unit 401, whose polarity differs from that of the external magnet unit, disposed inside the external magnet unit on the yoke, and a rotary mechanism that rotates the yoke around the rotary center 4111 of the yoke. The interior magnet unit comprises n-number of interior magnets that radially extend to at least n (n is a positive integral number of 3 or more) direction from the rotary center of the yoke. The external magnet unit comprises 3n-1 or more external magnets having a shape with 3n-1 angular or more, disposed so as to surround the n-number of interior magnets.
摘要翻译：要解决的问题：提供可以容易地并且均等地进行目标腐蚀的磁体单元。解决方案：磁控管溅射装置的磁体单元设置有由铁磁板材制成并设置在支撑靶的阴极的背面上的轭412，设置在其上的环状外部磁体单元402 磁轭，内部磁体单元401，其极性不同于设置在磁轭上的外部磁体单元内部的外部磁体单元的极性;以及旋转机构，其使轭绕磁轭的旋转中心4111旋转。内部磁体单元包括n个从磁轭的旋转中心径向延伸至至少n（n为正整数3或更多）的内部磁体。外部磁体单元包括3n-1个或更多个具有3n-1角以上的形状的外部磁体，其被设置为围绕n个内部磁体。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2010222698A Magnetron sputtering cathode, magnetron sputtering apparatus and method of manufacturing magnetic device 有权
标题翻译：磁控溅射阴极射线管，MAGNETRON溅射装置及其制造方法
公开(公告)号：JP2010222698A
公开(公告)日：2010-10-07
申请号：JP2009276689
申请日：2009-12-04
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ENDO TETSUYA , ABARA EINSTEIN NOEL
IPC分类号： C23C14/35 , G11B5/31 , G11B5/39
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/3452
摘要： PROBLEM TO BE SOLVED: To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, for generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target.
SOLUTION: The magnetron sputtering cathode includes a target having a second annular groove 14 provided on the sputtering surface 10a of the target 10, a third annular projection 23 provided on the non-sputtering surface 10b of the target 10, a fourth annular groove 24 provided outside the third annular projection 23 on the non-sputtering surface 10b, and a fourth annular projection 25 provided outside the fourth annular groove 24 on the non-sputtering surface 10b. Further, the magnetron sputtering cathode includes a first magnet 5 and a second magnet 6 having a polarity different from that of the first magnet 5 on the side of the non-sputtering surface 10b.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁控溅射阴极，磁控管溅射装置和一种制造磁性装置的方法，用于产生足够大的泄漏磁场，以形成在即使目标是磁体并且较厚并且铁磁体用作目标，也是目标。解决方案：磁控溅射阴极包括具有设置在靶10的溅射表面10a上的第二环形槽14的靶，设置在靶10的非溅射表面10b上的第三环形突起23，第四环凹槽24设置在非溅射表面10b上的第三环形突起23的外侧，以及设置在非溅射表面10b上的第四环形槽24的外侧的第四环形突起25。此外，磁控溅射阴极包括在非溅射表面10b一侧具有与第一磁体5的极性不同的极性的第一磁体5和第二磁体6。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010144247A Sputtering system and film deposition method 审中-公开
标题翻译：溅射系统和薄膜沉积方法
公开(公告)号：JP2010144247A
公开(公告)日：2010-07-01
申请号：JP2009143965
申请日：2009-06-17
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ENDO TETSUYA , ABARA EINSTEIN NOEL
IPC分类号： C23C14/34 , H01F41/18
摘要： PROBLEM TO BE SOLVED: To provide a sputtering system which can deposit a magnetic film in which variation in the direction of magnetic anisotropy is reduced, and to provide a film deposition method. SOLUTION: The sputtering system comprises a rotatable cathode 802, a rotatable stage 801, and a rotatable blocking plate 805. In the sputtering system, during sputtering, the rotation of at least one selected from the cathode 802, the stage 801 and the blocking plate 805 is controlled in such a manner that, among sputtering particles generated from a target 803a, the sputtering particles made incident at an angle of 0 to 50°C as an angle formed with the normal of a substrate 804 are made incident on the substrate 804. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种溅射系统，其可以沉积磁性膜的方向的变化减小的磁性膜，并提供成膜方法。解决方案：溅射系统包括可旋转阴极802，可旋转平台801和可旋转阻挡板805.在溅射系统中，在溅射期间，从阴极802，平台801和以这样的方式控制阻挡板805，使得从靶803a产生的溅射颗粒中，以与基板804的法线形成的角度以0至50℃的角度入射的溅射颗粒入射到衬底804.版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010009741A Magnetic recording disk manufacturing apparatus 审中-公开
标题翻译：磁记录盘制造设备
公开(公告)号：JP2010009741A
公开(公告)日：2010-01-14
申请号：JP2009191772
申请日：2009-08-21
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SHIBAMOTO MASAHIRO , FURUKAWA SHINJI , ENDO TETSUYA , SAKAI MIHO , WATANABE NAOKI
IPC分类号： G11B5/851 , C23C14/34 , G11B5/738
摘要： PROBLEM TO BE SOLVED: To provide a new configuration which can give a magnetic anisotropy to the magnetic recording layer without forming textures.
SOLUTION: The magnetic recording disk comprising a magnetic recording layer 91 formed on the base plate 9 has an anisotropy forming layer 92 between the base plate 9 and the magnetic recording layer 91 to give a magnetic anisotropy to the magnetic recording layer 91. The anisotropy forming layer 92 is a thin film of a tantalum, niobium alloy or tantalum alloy, is nitride or contains nitrogen, and its surface has been exposed to the atmospheric gas, nitrogen gas, or oxygen gas, and denaturalized. The anisotropy forming layer 92 is, for example, a thin film made by sputtering a chrome niobium alloy target with a process gas containing nitrogen, and exposed to an oxygen gas with about 0.5-10 Pa after forming this film. Among the sputtering particles from the target, a relatively large number of them flying with the direction components in the direction of the anisotropy to give are controlled to reach the base plate 9.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供可以在不形成纹理的情况下给予磁记录层的磁各向异性的新构造。解决方案：包括形成在基板9上的磁记录层91的磁记录盘在基板9和磁记录层91之间具有各向异性形成层92，以向磁记录层91提供磁各向异性。各向异性形成层92是钽，铌合金或钽合金的薄膜，是氮化物或含有氮，其表面暴露于大气中，氮气或氧气，变质。各向异性形成层92例如是通过用含有氮的处理气体溅射铬铌合金靶并在形成该膜后暴露于约0.5-10Pa的氧气而制成的薄膜。在来自目标的溅射颗粒中，相对大量的沿各向异性方向的方向分量飞行以得到以控制到达底板9.版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2012149340A Sputtering apparatus 有权
标题翻译：溅射装置
公开(公告)号：JP2012149340A
公开(公告)日：2012-08-09
申请号：JP2011269376
申请日：2011-12-08
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ENDO TETSUYA
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/3435
摘要： PROBLEM TO BE SOLVED: To reduce the load on a sputtering apparatus caused by attraction force acting between a ferromagnetic target and a magnet unit.SOLUTION: This sputtering apparatus includes: a target electrode which can mount a target thereon; a first support member for supporting the target electrode; a magnet unit forming a magnetic field on a surface of the target; a second support member for supporting the magnet unit; and a force generation portion which is provided between the first and second support members and generates second force in a direction opposite to first force that acts on the second support member by an action of the magnetic field formed between the target and the magnet unit. The second force has a magnitude which increases as the magnet unit comes closer to the target electrode.
摘要翻译：要解决的问题：减少由铁磁性靶和磁铁单元之间作用的吸引力引起的溅射装置的负荷。解决方案：该溅射装置包括：可在其上安装靶的目标电极; 用于支撑目标电极的第一支撑构件; 在所述靶的表面上形成磁场的磁体单元; 用于支撑磁体单元的第二支撑构件; 以及力产生部，其设置在所述第一支撑构件和所述第二支撑构件之间，并且通过形成在所述靶和所述磁体单元之间的磁场的作用沿与所述第二支撑构件作用的第一力相反的方向产生第二力。第二力具有随着磁体单元靠近目标电极而增加的量值。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011149100A Cooling system 审中-公开
标题翻译：冷却系统
公开(公告)号：JP2011149100A
公开(公告)日：2011-08-04
申请号：JP2010291100
申请日：2010-12-27
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ENDO TETSUYA , ABARA EINSTEIN NOEL
IPC分类号： C23C14/34 , G11B5/84
CPC分类号： H05K7/20009 , F25D25/027 , H01J37/34 , H05K7/20372 , H05K7/20545
摘要： PROBLEM TO BE SOLVED: To provide a technique for efficiently cooling a substrate while rotating the substrate. SOLUTION: A cooling system for cooling the substrate in a vacuum container 101 of a sputtering apparatus 100 includes: a substrate cooling stage 104 for cooling the substrate W; a cooling mechanism 102 for cooling the substrate cooling stage; cooling gas supply units 110, 111 which introduce a cooling gas to the substrate cooling stage; a substrate-rotating mechanism 105 which holds the substrate in a state separated from the substrate cooling stage by a prescribed gap and is rotated while holding the substrate; and a driving mechanism 106 which rotates the substrate-rotating mechanism at a prescribed rotational speed. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在旋转衬底的同时有效地冷却衬底的技术。解决方案：用于在溅射装置100的真空容器101中冷却基板的冷却系统包括：用于冷却基板W的基板冷却台104; 用于冷却基板冷却台的冷却机构102; 冷却气体供给单元110,111，其向基板冷却台引入冷却气体; 基板旋转机构105，其将基板保持在与基板冷却台分离规定间隙的状态，同时保持基板; 以及驱动机构106，其使基板旋转机构以规定的转速旋转。版权所有（C）2011，JPO＆INPIT

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