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91. 发明授权

US08232567B2 Light emitting device with pillar structure having hollow structure 有权
标题翻译：具有中空结构的柱结构的发光装置
公开(公告)号：US08232567B2
公开(公告)日：2012-07-31
申请号：US12425730
申请日：2009-04-17
申请人： Jing-Jie Dai , Wen-Chung Shih , Bo-Yuan Huang , Su-Hui Lin , Yu-Chieh Huang
发明人： Jing-Jie Dai , Wen-Chung Shih , Bo-Yuan Huang , Su-Hui Lin , Yu-Chieh Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/42
摘要： A light emitting device, includes a substrate; a first semiconductor layer on the substrate; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a transparent conductive layer on the second semiconductor layer; and a plurality of pillar structures with a hollow structure in the portion surface of the first semiconductor layer, thereby, the light extraction efficiency of the light emitting device can be improved due to the pillar structures with a hollow structure.
摘要翻译：发光装置，包括基板; 在所述基板上的第一半导体层; 在第一半导体层上的有源层; 有源层上的第二半导体层; 在所述第二半导体层上的透明导电层; 以及在第一半导体层的部分表面中具有中空结构的多个柱结构，从而由于具有中空结构的柱结构，可以提高发光器件的光提取效率。

92. 发明授权

US07960749B2 Light-emitting device structure and semiconductor wafer structure with the same 有权
标题翻译：发光元件结构与半导体晶圆结构相同
公开(公告)号：US07960749B2
公开(公告)日：2011-06-14
申请号：US12421923
申请日：2009-04-10
申请人： Shu Hui Lin
发明人： Shu Hui Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22
摘要： A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on the light-emitting structure, and a wall structure positioned on the second region.
摘要翻译：发光器件结构包括具有第一区域和第一区域外部的第二区域的衬底，位于第一区域上的第一导电类型半导体层，位于第一导电类型半导体层上的发光结构，第二导电类型半导体层位于所述发光结构上的导电型半导体层，以及位于所述第二区域上的壁结构。

93. 发明申请

US20110121334A1 SEMICONDUCTOR LIGHT-EMITTING DEVICES 有权
标题翻译：半导体发光器件
公开(公告)号：US20110121334A1
公开(公告)日：2011-05-26
申请号：US12652956
申请日：2010-01-06
申请人： JING JIE DAI , YEN CHIEH HUANG , SHU YING YANG
发明人： JING JIE DAI , YEN CHIEH HUANG , SHU YING YANG
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. In one embodiment of the present disclosure, each of the bumps has a top plane substantially parallel to the upper surface, the first conductive type semiconductor layer has a plurality of protrusions each facing a portion of the substrate between the bumps, and the protrusions are spaced apart from the bumps.
摘要翻译：一种半导体发光器件，包括具有上表面的基板和位于上表面的多个凸块，位于基板上的第一导电型半导体层，位于第一导电型半导体层上的发光结构，以及位于发光结构上的第二导电型半导体层。在本公开的一个实施例中，每个凸起具有基本上平行于上表面的顶平面，第一导电类型半导体层具有多个突起，每个突起面向凸起之间的基板的一部分，并且突起间隔开除了颠簸。

94. 发明授权

US07834368B2 Light-emitting diode having additional stack structure 有权
标题翻译：具有附加堆叠结构的发光二极管
公开(公告)号：US07834368B2
公开(公告)日：2010-11-16
申请号：US12426407
申请日：2009-04-20
申请人： Lin-Chieh Kao , Shu-Ying Yang
发明人： Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L29/22 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L29/18
CPC分类号： H01L33/20 , H01L33/42 , H01L33/44 , H01L2933/0083
摘要： A light-emitting diode includes a substrate, a primary stack structure, a secondary stack structure, a transparent insulating material and a transparent conducting layer in an embodiment. Each of the primary and the secondary stack structure has a first conducting-type semiconductor layer, and illuminating layer, and a second conducting-type semiconductor layer sequentially formed on the substrate, wherein plural pillar-like holes are formed at the top surface of the second conducting-type semiconductor layer of the secondary stack structure and protrude into the first conducting-type semiconductor layer of the secondary stack structure. The transparent insulating material is filled into the holes. The transparent conducting layer is coated on the primary stack structure, the transparent insulating material, and the tope surface of the second conducting-type semiconductor layer of the secondary stack structure.
摘要翻译：在一个实施例中，发光二极管包括基板，初级堆叠结构，二次堆叠结构，透明绝缘材料和透明导电层。初级和次级堆叠结构中的每一个具有第一导电型半导体层和照明层，以及顺序地形成在基板上的第二导电型半导体层，其中在顶部表面形成有多个柱状孔第二导电型半导体层，并且突出到二次堆叠结构的第一导电型半导体层中。透明绝缘材料填充到孔中。透明导电层涂覆在二次堆叠结构的初级堆叠结构，透明绝缘材料和第二导电型半导体层的顶表面上。

95. 发明授权

US07745837B2 Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same 有权
标题翻译：具有高光提取效率的半导体发光器件及其制造方法
公开(公告)号：US07745837B2
公开(公告)日：2010-06-29
申请号：US12000064
申请日：2007-12-07
申请人： Tzong-Liang Tsai
发明人： Tzong-Liang Tsai
IPC分类号： H01L29/167
CPC分类号： H01L33/10 , H01L33/02 , H01L33/22
摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.
摘要翻译：本发明公开了一种半导体发光器件及其制造方法。根据本发明的半导体发光器件包括衬底，第一半导体材料层，多层结构和欧姆电极结构。基板具有形成在第一上表面上的第一上表面和多个凹部。第一半导体材料层形成在基板的第一上表面上并具有第二上表面。多层结构形成在第一半导体材料层的第二上表面上并且包括发光区域。欧姆电极结构形成在多层结构上。特别地，第一半导体材料层的折射率与基板和多层结构的最底层的折射率不同。

96. 发明申请

US20100059773A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20100059773A1
公开(公告)日：2010-03-11
申请号：US12327367
申请日：2008-12-03
申请人： CHIH CHING CHENG , TZONG-LIANG TSAI , SHU HUI LIN
发明人： CHIH CHING CHENG , TZONG-LIANG TSAI , SHU HUI LIN
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.
摘要翻译：半导体发光器件包括衬底，位于衬底上的第一导电类型半导体层，位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。基板包括上表面和位于上表面上的多个突起。每个突起包括顶表面，多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

97. 发明申请

US20090308319A1 WAFER CARRIER AND EPITAXY MACHINE USING THE SAME 审中-公开
标题翻译：使用它的波浪载体和外延机
公开(公告)号：US20090308319A1
公开(公告)日：2009-12-17
申请号：US12194013
申请日：2008-08-19
申请人： CHIH CHING CHENG , TZONG-LIANG TSAI
发明人： CHIH CHING CHENG , TZONG-LIANG TSAI
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C30B25/12
摘要： A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.
摘要翻译：晶片载体包括以分解的方式定位在基座的顶表面上的基座和屏蔽板。基座的顶表面构造成保持多个晶片，并且屏蔽板具有暴露晶片的多个开口。特别地，屏蔽板屏蔽除了晶片占据的其它部分之外的基底的一部分，以防止反应气体进行化学反应，直接在基底的表面上产生反应物。因此，基底与化学反应隔离，在进行下一个制造工艺之前不需要更换基底，也不需要通过热烘烤或蚀刻来清洁基底表面上的反应物。

98. 发明申请

US20090200667A1 OHMIC CONTACT FILM IN SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件中的OHMIC接触膜
公开(公告)号：US20090200667A1
公开(公告)日：2009-08-13
申请号：US12426061
申请日：2009-04-17
申请人： Chiung-Chi TSAI , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi TSAI , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L23/532
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxQzNy, where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x and y and z are molar numbers.
摘要翻译：本发明提供了形成在半导体器件的掺杂半导体材料层和导电材料层之间的欧姆接触膜。根据本发明优选实施方案的欧姆接触膜的组成由通式MxQzNy表示，其中M表示II族化学元素，Q表示IV族化学元素，N表示V基团化学元素， = x <= 3,1 <= y <= 3,1 <= z <= 3，x和y和z是摩尔数。

99. 发明申请

US20090101886A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090101886A1
公开(公告)日：2009-04-23
申请号：US12128402
申请日：2008-05-28
申请人： Hsuan-Tang CHANG
发明人： Hsuan-Tang CHANG
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/382 , H01L33/20 , H01L33/44
摘要： The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a first semiconductor material layer, a light-emitting layer, a second semiconductor material layer, a first transparent insulating layer, a metal layer and at least one electrode. The first semiconductor material layer, the light-emitting layer, and the second semiconductor material layer are formed in sequence on the substrate. An opening is formed on the upper surface of the second semiconductor material layer and extends to the interior of the first semiconductor material layer. The first transparent insulating layer overlays the sidewalls of the opening and substantially overlays the upper surface of the second semiconductor material layer such that a region of the upper surface is exposed. The metal layer fills the opening, overlays the exposed region, and partially overlays the first transparent insulating layer. The at least one electrode is formed on the metal layer.
摘要翻译：本发明公开了一种半导体发光装置。半导体发光器件包括衬底，第一半导体材料层，发光层，第二半导体材料层，第一透明绝缘层，金属层和至少一个电极。第一半导体材料层，发光层和第二半导体材料层依次形成在基板上。开口形成在第二半导体材料层的上表面上并延伸到第一半导体材料层的内部。第一透明绝缘层覆盖开口的侧壁，并且基本上覆盖第二半导体材料层的上表面，使得上表面的区域被暴露。金属层填充开口，覆盖暴露区域，并部分覆盖第一透明绝缘层。所述至少一个电极形成在所述金属层上。

100. 发明授权

US07498607B2 Epi-structure with uneven multi-quantum well and the method thereof 有权
标题翻译：具有不均匀多量子阱的Epi结构及其方法
公开(公告)号：US07498607B2
公开(公告)日：2009-03-03
申请号：US11798750
申请日：2007-05-16
申请人： Tzong-Liang Tsai , Chih-Ching Cheng
发明人： Tzong-Liang Tsai , Chih-Ching Cheng
IPC分类号： H01L29/22 , H01L33/00 , H01L29/24
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333 , H01S2304/04
摘要： An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.
摘要翻译：发光装置的Epi结构，包括：在基板上形成的第一半导体导电层; 在具有多量子阱（MQW）的第一半导体导电层上形成的有源层; 以及形成在所述有源层上的第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和活性层之间被散射，以形成不均匀的多量子阱。

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