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91. 发明授权

US09319006B2 System and method for a radio frequency coupler 有权
标题翻译：射频耦合器的系统和方法
公开(公告)号：US09319006B2
公开(公告)日：2016-04-19
申请号：US14043496
申请日：2013-10-01
申请人： Infineon Technologies AG
发明人： Valentyn Solomko , Winfried Bakalski , Nikolay Ilkov
IPC分类号： H01P5/18 , H03F1/56 , H03F3/195 , H03F3/68 , H03F3/60 , H03F1/02 , H03H11/36 , H03H11/00 , H03H7/24
CPC分类号： H03F1/56 , H01P5/18 , H03F1/0261 , H03F3/195 , H03F3/602 , H03F3/68 , H03F2200/198 , H03F2200/255 , H03F2200/451 , H03H7/24 , H03H11/36
摘要： In accordance with an embodiment, a directional coupler includes a coupler circuit and at least one amplifier coupled between a coupler circuit isolated port and a directional coupler isolated port and/or between a coupler circuit coupled port and a directional coupler coupled port. In various embodiments, the directional coupler is disposed over and/or in a substrate.
摘要翻译：根据实施例，定向耦合器包括耦合器电路和耦合在耦合器电路隔离端口和定向耦合器隔离端口之间和/或耦合器电路耦合端口和定向耦合器耦合端口之间的至少一个放大器。在各种实施例中，定向耦合器设置在衬底上和/或衬底中。

92. 发明授权

US09209505B2 Resonance device and filter including the same 有权
标题翻译：共振装置和滤波器包括相同
公开(公告)号：US09209505B2
公开(公告)日：2015-12-08
申请号：US14288635
申请日：2014-05-28
申请人： Innertron, Inc.
发明人： Soo Duk Seo , Hak Rae Cho , Moon Bong Ko
IPC分类号： H03H11/00 , H01P1/20
CPC分类号： H01P1/2053 , H01P1/20
摘要： A resonance device including a plurality of signal input/output ports, further including: a plurality of resonators arranged in a state of being spaced apart from each other; and a notch resonator formed at a side of the plurality of resonators, wherein the notch resonator includes: a laminated part having a laminated structure formed by layering a plurality of conductive layers; a first transmitting layer connected to one of the plurality of conductive layers; and a bridge connected between the first transmitting layer and one of the plurality of resonators, wherein one of the plurality of signal input/output ports is connected to the bridge.
摘要翻译：一种包括多个信号输入/输出端口的谐振装置，还包括：以彼此间隔开的状态布置的多个谐振器; 以及形成在所述多个谐振器的一侧的陷波谐振器，其中所述切口谐振器包括：层叠部，其具有通过层叠多个导电层而形成的层叠结构; 连接到所述多个导电层之一的第一透射层; 连接在所述第一透射层和所述多个谐振器中的一个之间的桥，其中所述多个信号输入/输出端口中的一个连接到所述桥。

93. 发明申请

US20120212289A1 EMS TUNABLE TRANSISTOR 失效
公开(公告)号：US20120212289A1
公开(公告)日：2012-08-23
申请号：US13033423
申请日：2011-02-23
申请人： Manish Kothari , Alok Govil
发明人： Manish Kothari , Alok Govil
IPC分类号： H03H11/00 , H01L29/84
CPC分类号： H01L29/515 , H01L29/42384 , H01L29/4908
摘要： A field effect transistor comprises an electrostatically moveable gate electrode. The moveable gate is supported by at least two posts, and the source, drain, and channel of the transistor are centrally located under the moveable layer. At least one electrode is positioned on at least two sides of the source, drain, and channel.
摘要翻译：场效应晶体管包括静电可移动栅电极。可移动门由至少两个柱支撑，并且晶体管的源极，漏极和沟道位于可移动层下方的中心。至少一个电极位于源极，漏极和沟道的至少两侧。

94. 发明授权

US08242863B2 Active inductance for very high frequencies based on CMOS inverters 有权
标题翻译：基于CMOS逆变器的非常高频的有源电感
公开(公告)号：US08242863B2
公开(公告)日：2012-08-14
申请号：US12192793
申请日：2008-08-15
申请人： Oliver Schmitz , Sven Karsten Hampel , Fabian Beichert , Marc Tiebout
发明人： Oliver Schmitz , Sven Karsten Hampel , Fabian Beichert , Marc Tiebout
IPC分类号： H03H11/00
CPC分类号： H03H11/42 , H03H11/28
摘要： The present disclosure relates to techniques for simulating electrical inductance.
摘要翻译：本公开涉及用于模拟电感的技术。

95. 发明申请

US20120188007A1 Impedance-Matching Network Using BJT Switches in Variable-Reactance Circuits 有权
标题翻译：阻抗匹配网络在可变电抗电路中使用BJT开关
公开(公告)号：US20120188007A1
公开(公告)日：2012-07-26
申请号：US13010647
申请日：2011-01-20
申请人： Gideon J. Van Zyl , Gennady G. Gurov
发明人： Gideon J. Van Zyl , Gennady G. Gurov
IPC分类号： H03H11/00 , H03K3/00
CPC分类号： H03H11/30 , H01J37/32183 , H03H5/12 , H03H7/38 , H03K17/16 , H03K17/60 , H03K17/68 , H05H1/46 , H05H2001/4682
摘要： This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.
摘要翻译：本公开描述了用于将从射频发生器发送的射频功率阻抗匹配到半导体处理室中的等离子体负载的系统，方法和装置。可以通过具有可变电抗电路的匹配网络来执行阻抗匹配。可变电抗电路可以包括一个或多个无功元件，其全部连接到第一端子，并经由开关选择性地短路到第二端子。开关可以包括通过偏置电路控制的双极结型晶体管（BJT）或绝缘栅双极晶体管（IGBT）。在导通状态下，BJT基极 - 发射极结正向偏置，并且AC在集电极端子和基极端子之间传导。因此，AC主要通过BJT从集电器到基极而不是从集电极到发射极。此外，可以修改与真空可变电容器一起使用的经典匹配网络拓扑，使得电压不会在修改的拓扑中使BJT过载。

96. 发明申请

US20110175441A1 DEVICE AND METHOD FOR COUPLING TWO PARTS OF A DC NETWORK, PARTICULARLY IN AN AIRCRAFT 有权
标题翻译：用于联接直流网络的两个部件，特别是在飞机上的装置和方法
公开(公告)号：US20110175441A1
公开(公告)日：2011-07-21
申请号：US12993659
申请日：2009-05-28
申请人： Olivier Langlois , Lucien Prisse , Marc Aiximeno
发明人： Olivier Langlois , Lucien Prisse , Marc Aiximeno
IPC分类号： B60L1/00 , H03H11/00
CPC分类号： H02M3/158 , H02M3/156 , Y10T307/766
摘要： A device and method for coupling two parts of a dc network, in which at least two capacitors respectively are installed, particularly onboard an aircraft. The device includes at least one static converter including at least one electronic coupling device, including at least one transistor and one diode, associated with an inductance, arranged between these at least two capacitors.
摘要翻译：一种用于耦合直流网络的两部分的装置和方法，其中分别安装至少两个电容器，特别是在飞机上。该装置包括至少一个静态转换器，其包括至少一个电子耦合装置，该电子耦合装置包括至少一个晶体管和一个与电感相关联的二极管，布置在这些至少两个电容器之间。

97. 发明申请

US20110140785A1 CMOS AMPLIFIER WITH INTEGRATED TUNABLE BAND-PASS FUNCTION 有权
标题翻译：具有集成可控带通功能的CMOS放大器
公开(公告)号：US20110140785A1
公开(公告)日：2011-06-16
申请号：US12997357
申请日：2009-06-11
申请人： Yong Lian , Libin Yao , Xiaoyuan Xu , Xiaodan Zou
发明人： Yong Lian , Libin Yao , Xiaoyuan Xu , Xiaodan Zou
IPC分类号： H03F1/34 , H03H11/00 , H05K13/00
CPC分类号： H03F3/187 , H03F3/45183 , H03F3/45475 , H03F2200/261 , H03F2200/411 , H03F2203/45138 , H03F2203/45524 , H03F2203/45526 , H03F2203/45544 , H03F2203/45548 , H03F2203/45562 , H03F2203/45604 , H03H11/1291 , Y10T29/49002
摘要： A CMOS amplifier with integrated tunable band-pass function, a tunable active resistor structure, a method of amplifying an input signal and a method of fabricating an amplifier. The tunable active resistor structure comprises two symmetrically cross-coupled transistors.
摘要翻译：具有集成可调谐带通功能的CMOS放大器，可调谐有源电阻器结构，放大输入信号的方法和制造放大器的方法。可调谐有源电阻器结构包括两个对称交叉耦合的晶体管。

98. 发明申请

US20090284311A1 RESISTOR CIRCUIT 失效
标题翻译：电阻电路
公开(公告)号：US20090284311A1
公开(公告)日：2009-11-19
申请号：US11911637
申请日：2006-05-25
申请人： Koichi Ito
发明人： Koichi Ito
IPC分类号： H03H11/00
CPC分类号： H03H11/245 , H03F1/56 , H03F3/45183 , H03F2203/45638 , H03F2203/45641 , H03F2203/45686 , H03F2203/45691
摘要： Operations as a variable resistor are favorably realized even when a drain-source voltage of a variable MOS resistor and that of a reference MOS resistor are not the same.A gate voltage Vp12 of the variable MOS resistor is controlled with reference to a gate voltage Vp11 which is controlled such that a voltage generated in the reference MOS resistor is controlled to be the same as a reference voltage. A resistor is connected in parallel with the reference MOS resistor between the drain and source thereof, the resistor including resistor bodies R11 and R12 having the same resistance connected in series. Half of a drain-source voltage Vds of the reference MOS resistor is detected at an intermediate point of the resistor having resistor bodies connected in series. The gate voltage Vp12 of the variable resistor is obtained by subtracting Vds/2 from the gate voltage Vp11 of the reference MOS resistor.
摘要翻译：即使当可变MOS电阻器和参考MOS电阻器的漏极 - 源极电压不相同时，也可以实现作为可变电阻器的操作。参考栅极电压Vp11控制可变MOS电阻器的栅极电压Vp12，栅极电压Vp11被控制为使得参考MOS电阻器中产生的电压被控制为与参考电压相同。电阻器与漏极和源极之间的参考MOS电阻并联连接，电阻器包括具有相同电阻串联连接的电阻体R11和R12。在具有串联连接的电阻体的电阻器的中间点处检测参考MOS电阻器的漏极 - 源极电压Vds的一半。可变电阻器的栅极电压Vp12通过从参考MOS电阻器的栅极电压Vp11减去Vds / 2来获得。

99. 发明申请

US20090243715A1 Device and Method for Limiting Di/Dt Caused by a Switching FET of an Inductive Switching Circuit 有权
公开(公告)号：US20090243715A1
公开(公告)日：2009-10-01
申请号：US12479552
申请日：2009-06-05
申请人： Sanjay Havanur
发明人： Sanjay Havanur
IPC分类号： H03H11/00
CPC分类号： H03K17/08142 , H01L2224/0603 , H01L2224/48137 , H01L2224/48247 , H01L2224/49111 , H01L2224/49113 , H03K17/164
摘要： A circuit for limiting di/dt caused by a main switching FET during its turn-off against an inductive switching circuit is proposed. The circuit for limiting di/dt includes: An auxiliary inductor in series with the main switching FET for inducing an auxiliary inductive voltage proportional to di/dt. An auxiliary FET in parallel with the main switching FET. The auxiliary FET gate is connected to produce a gate voltage equal to the auxiliary inductive voltage. When the di/dt tends to exceed a pre-determined maximum rate of decrease, the auxiliary FET produces an auxiliary current component counteracting further decrease of the di/dt. The main switching FET and the auxiliary FET can be formed from a single die with shared source and drain. The auxiliary inductor can be implemented as a parasitic inductance of an inherently required bonding wire connecting the main switching FET to its device terminal to simplify packaging with reduced cost.

100. 发明申请

US20090206924A1 Semiconductor Device Structures and Related Processes 有权
标题翻译：半导体器件结构及相关工艺
公开(公告)号：US20090206924A1
公开(公告)日：2009-08-20
申请号：US12368399
申请日：2009-02-10
申请人： Jun Zeng , Mohamed N. Darwish
发明人： Jun Zeng , Mohamed N. Darwish
IPC分类号： H03H11/00 , H01L29/78
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped region. This local dopant zone decreases the minority carrier injection efficiency of the body diode of the device and alters the electric field distribution during the body diode reverse recovery.
摘要翻译：改进了高可靠性的功率RFP结构和制造和操作过程。该结构包括在RFP沟槽下面的多个局部掺杂浓缩区域，浮动或延伸并与MOSFET的体层合并或者通过垂直掺杂区域的区域与源层连接。该局部掺杂剂区域降低器件体二极管的少数载流子注入效率，并改变体二极管反向恢复期间的电场分布。

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