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11. 发明授权

US08269208B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US08269208B2
公开(公告)日：2012-09-18
申请号：US12044407
申请日：2008-03-07
申请人： Wolodymyr Czubatyj , Regino Sandoval
发明人： Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： H01L47/00 , H01L29/04
CPC分类号： H01L45/122 , H01L45/06 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.
摘要翻译：相变存储器件包括具有穿过其中的孔的第一绝缘体，至少部分地匹配于该孔的第一电极，与第一电极电连通的相变材料以及与该相位电连通的第二电极交换材料当电流通过相变材料从第一电极通过第二电极时，第一和第二电极中的至少一个保持与相变材料不反应。

12. 发明授权

US08188454B2 Forming a phase change memory with an ovonic threshold switch 有权
标题翻译：形成一个带有超声门限开关的相变存储器
公开(公告)号：US08188454B2
公开(公告)日：2012-05-29
申请号：US11262246
申请日：2005-10-28
申请人： Charles H. Dennison
发明人： Charles H. Dennison
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/1675
摘要： A phase change memory may include an ovonic threshold switch formed over an ovonic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to reduce leakage current.
摘要翻译：相变存储器可以包括在超声波存储器上形成的超声门限开关。在一个实施例中，开关包括与下面的电极重叠的硫族化物层。然后，由于蚀刻硫族化物层而导致的边缘损坏可以被隔离以减少漏电流。

13. 发明授权

US08116159B2 Using a bit specific reference level to read a resistive memory 有权
标题翻译：使用特定的参考电平读取电阻性存储器
公开(公告)号：US08116159B2
公开(公告)日：2012-02-14
申请号：US11093877
申请日：2005-03-30
申请人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
发明人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
IPC分类号： G11C7/14
CPC分类号： G11C7/14 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054
摘要： A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
摘要翻译：在读取电流改变之后，可以利用使用一个读取电流访问所选位的电压来读取未触发的相变存储器的选定位。因此，可以使用不同的参考电压来感测比较阻性的选择的单元更多的电阻的状态。在一些实施例中，可以改善所得到的读取窗口或边缘。

14. 发明授权

US08098519B2 Semiconductor phase change memory using multiple phase change layers 有权
公开(公告)号：US08098519B2
公开(公告)日：2012-01-17
申请号：US12764157
申请日：2010-04-21
申请人： Charles H. Dennison , Stephen J. Hudgens
发明人： Charles H. Dennison , Stephen J. Hudgens
IPC分类号： G11C11/00
CPC分类号： H01L45/065 , G11C13/0004 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , Y10S977/754
摘要： In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. For example, in one embodiment, a diffusion barrier layer may be maintained between the two distinct phase change layers. In another embodiment, a face centered cubic chalcogenide structure may be utilized.

15. 发明授权

US08098512B2 Reading phase change memories 有权
标题翻译：阅读相变记忆
公开(公告)号：US08098512B2
公开(公告)日：2012-01-17
申请号：US13072911
申请日：2011-03-28
申请人： Ward D. Parkinson , Giulio Casagrande , Claudio Resta , Roberto Gastaldi , Ferdinando Bedeschi
发明人： Ward D. Parkinson , Giulio Casagrande , Claudio Resta , Roberto Gastaldi , Ferdinando Bedeschi
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C2013/0045 , G11C2013/0054 , G11C2013/0066 , G11C2213/75 , G11C2213/76
摘要： A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.
摘要翻译：可以使用高达阈值相变存储器元件的读取电流来读取元件而不对存储元件进行阈值化。在某些情况下，较高的电流可能会改善性能。由于读取元素并且在触发存储器元件之前停止了当前存储器元件，因此存储器元件不会被阈值。

16. 发明授权

US08053753B2 Thin film logic circuitry 有权
标题翻译：薄膜逻辑电路
公开(公告)号：US08053753B2
公开(公告)日：2011-11-08
申请号：US12156996
申请日：2008-06-06
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： H01L47/00
CPC分类号： G11C13/003 , G11C5/02 , G11C13/0004 , G11C29/1201 , G11C2213/15 , G11C2213/71 , G11C2213/76 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1206 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A multi-layer thin-film device includes thin film memory and thin film logic. The thin film memory may be programmable resistance memory, such as phase change memory, for example. The thin film logic may be complementary logic.
摘要翻译：多层薄膜器件包括薄膜存储器和薄膜逻辑。薄膜存储器可以是可编程电阻存储器，例如相变存储器。薄膜逻辑可以是互补逻辑。

17. 发明授权

US07986550B2 Analog access circuit for validating chalcogenide memory cells 有权
标题翻译：用于验证硫族化物记忆单元的模拟访问电路
公开(公告)号：US07986550B2
公开(公告)日：2011-07-26
申请号：US12525510
申请日：2008-11-26
申请人： Bin Li , Adam Matthew Bumgarner
发明人： Bin Li , Adam Matthew Bumgarner
IPC分类号： G11C7/00
CPC分类号： G11C13/004 , G11C13/0004 , G11C27/005 , G11C29/026 , G11C29/1201 , G11C29/50 , G11C2013/0054 , G11C2029/5006
摘要： An analog access circuit for characterizing chalcogenide memory cells is disclosed. The analog access circuit includes an analog access control module, an address and data control module, and an analog cell access and current monitoring module. The analog access control module selectively controls whether a normal memory access or an analog memory access should be performed on a specific chalcogenide memory cell. The address and data control module allows a normal memory access to the chalcogenide memory cell according to an input address. The analog cell access and current monitoring module performs an analog memory access to the chalcogenide memory cell according to the input address, and monitors a reference current from a sense amplifier associated with the chalcogenide memory cell.
摘要翻译：公开了一种用于表征硫族化物存储器单元的模拟存取电路。模拟访问电路包括模拟访问控制模块，地址和数据控制模块以及模拟单元访问和电流监控模块。模拟访问控制模块选择性地控制是否应该在特定的硫族化物存储器单元上执行正常存储器存取或模拟存储器访问。地址和数据控制模块允许根据输入地址对硫属化物存储器单元进行正常存储器访问。模拟电池接入和电流监测模块根据输入地址对硫族化物存储单元进行模拟存储器存取，并监测来自与硫族化物存储单元相关联的读出放大器的参考电流。

18. 发明授权

US07943922B2 Nitrogenated carbon electrode for chalcogenide device and method of making same 有权
标题翻译：用于硫属化物装置的氮化碳电极及其制造方法
公开(公告)号：US07943922B2
公开(公告)日：2011-05-17
申请号：US12348979
申请日：2009-01-06
申请人： Jeffrey P. Fournier
发明人： Jeffrey P. Fournier
IPC分类号： H01L47/00
CPC分类号： H01L45/16 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , Y10S977/741 , Y10S977/838
摘要： A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.
摘要翻译：描述适用于硫属化物装置的氮化碳电极及其制造方法。电极包含氮化碳并与硫族化物材料电连通。氮化碳材料可以通过在物理气相沉积工艺中组合氮气和汽化碳来制备。

19. 发明授权

US07936593B2 Reducing drift in chalcogenide devices 有权
标题翻译：减少硫族化物装置中的漂移
公开(公告)号：US07936593B2
公开(公告)日：2011-05-03
申请号：US12082070
申请日：2008-04-08
申请人： Semyon D. Savransky
发明人： Semyon D. Savransky
IPC分类号： G11C11/00 , H01L47/00
CPC分类号： H01L45/06 , H01L45/04 , H01L45/1253 , H01L45/126 , H01L45/144
摘要： Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with time. By providing a compensating material which exhibits an opposing tendency, the drift may be compensated. The compensating material may be mixed into a chalcogenide, may be layered with chalcogenide, may be provided with a heater, or may be provided as part of an electrode in some embodiments. Both chalcogenide and non-chalcogenide compensating materials may be used.
摘要翻译：通常用于硫族化物记忆装置和超声波阈值开关的硫属化物材料可能会出现称为漂移的趋势，其中阈值电压或电阻随时间而变化。通过提供具有相反趋势的补偿材料，可以补偿漂移。补偿材料可以混合成硫族化物，可以用硫族化物层叠，可以设置有加热器，或者可以在一些实施方案中提供作为电极的一部分。可以使用硫族化物和非硫族化物补偿材料。

20. 发明授权

US07920414B2 Asymmetric-threshold three-terminal switching device 有权
标题翻译：非对称阈值三端开关器件
公开(公告)号：US07920414B2
公开(公告)日：2011-04-05
申请号：US12157076
申请日：2008-06-06
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： G11C5/02 , G11C13/0004 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1206 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： An asymmetric-threshold three-terminal electronic switching device includes three terminals coupled to a threshold-switching material. A signal applied across first and second terminals affects an electrical characteristic between the second and third electrodes to a greater extent than the same signal applied across the first and third electrodes. The affected electrical characteristic may be a threshold voltage or conductivity, for example.
摘要翻译：非对称阈值三端子电子开关器件包括耦合到阈值切换材料的三个端子。施加在第一和第二端子上的信号比施加在第一和第三电极上的相同信号更大程度地影响第二和第三电极之间的电特性。例如，受影响的电特性可以是阈值电压或电导率。

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