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11. 发明授权

US06632721B1 Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains 失效
标题翻译：制造具有包括半球形晶粒的电极的电容器的半导体器件的方法
公开(公告)号：US06632721B1
公开(公告)日：2003-10-14
申请号：US09602887
申请日：2000-06-23
申请人： Shinpei Iijima , Satoshi Yamamoto , Jun Kuroda , Hiroshi Miki , Yoshihisa Fujisaki , Tadanori Yoshida , Kenichi Yamaguchi
发明人： Shinpei Iijima , Satoshi Yamamoto , Jun Kuroda , Hiroshi Miki , Yoshihisa Fujisaki , Tadanori Yoshida , Kenichi Yamaguchi
IPC分类号： H01L2120
CPC分类号： H01L28/84 , H01L27/10814 , H01L27/10894
摘要： In a method of manufacturing a semiconductor integrated circuit device in which a lower electrode of a capacitor is composed of a polycrystalline silicon film having a surface area increased by surface roughening, an impurity is introduced into the polycrystalline silicon film by vapor phase diffusion in order to reduce the resistance of the lower electrode.
摘要翻译：在制造半导体集成电路器件的方法中，其中电容器的下电极由具有由表面粗糙度增加的表面积的多晶硅膜构成，通过气相扩散将杂质引入到多晶硅膜中，以便降低下电极的电阻

12. 发明授权

US06420192B2 Method of manufacturing semiconductor memory 失效
标题翻译：制造半导体存储器的方法
公开(公告)号：US06420192B2
公开(公告)日：2002-07-16
申请号：US09968921
申请日：2001-10-03
申请人： Hiroshi Miki , Keiko Abdelghafar , Yoshihisa Fujisaki
发明人： Hiroshi Miki , Keiko Abdelghafar , Yoshihisa Fujisaki
IPC分类号： H01G706
CPC分类号： H01L28/56 , H01L21/02197 , H01L21/02323 , H01L21/0234 , H01L28/75
摘要： A semiconductor memory which is improved in reliability by preventing the lowering of capacitance and defective insulation, especially, electrode delamination. The semiconductor memory has an integrated capacitor composed of a capacitor structure constituted of an upper electrode, a lower electrode, and a capacitor insulating film (of a high-dielectric-constant or ferroelectric thin film) which is held between electrodes and serves as a capacitor insulating film, and a protective insulating film which covers the capacitor structure and is formed by plasma treatment after electrode formation. An oxygen introducing layer is formed on the surface of the capacitor insulating film. The oxygen introducing layer can be formed on the surface of the high-dielectric-constant or ferroelectric material by introducing oxygen to the boundary between the electrode and the material by conducting heat treatment in an oxygen atmosphere before the protective insulating film (SiO2 passivation film) is formed.
摘要翻译：一种半导体存储器，其通过防止电容降低和绝缘不良，特别是电极分层而提高了可靠性。半导体存储器具有由电容器结构构成的集成电容器，该电容器结构由保持在电极之间的上电极，下电极和电容器绝缘膜（高介电常数或铁电薄膜）构成，并用作电容器绝缘膜和覆盖电容器结构的保护绝缘膜，并且在电极形成之后通过等离子体处理形成。在电容器绝缘膜的表面上形成氧气引入层。通过在保护绝缘膜（SiO 2钝化膜）之前通过在氧气氛中进行热处理将氧引入电极和材料之间的边界，可以在高介电常数或铁电材料的表面上形成氧气引入层，形成了。

13. 发明授权

US5733805A Method of fabricating semiconductor device utilizing a GaAs single crystal 失效
标题翻译：使用GaAs单晶制造半导体器件的方法
公开(公告)号：US5733805A
公开(公告)日：1998-03-31
申请号：US457569
申请日：1995-06-01
申请人： Yoshihisa Fujisaki , Yukio Takano , Tsutomu Ishiba
发明人： Yoshihisa Fujisaki , Yukio Takano , Tsutomu Ishiba
IPC分类号： C30B15/00 , H01L29/207 , H01L29/32 , H01L21/301
CPC分类号： H01L29/32 , C30B15/00 , C30B29/42 , H01L29/207 , H01L2924/0002
摘要： By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements inthe wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4.times.10.sup.-5, and the density of Si atoms contained in the GaAs single crystal is set to at most 1.times.10.sup.16 cm.sup.-3, whereby the characteristics of semiconductor elements whose parent matrial is the GaAs single crystal can be made uniform.
摘要翻译：通过利用晶片中的晶格畸变分布与场效应晶体管的阈值电压分布之间的强相关性，晶片中晶格畸变的分布减小，从而减轻半导体的特性分布晶片中的元素 GaAs单晶在正常温度下的晶格畸变的最大值和最小值之间的差设定为4×10-5以下，将GaAs单晶中所含的Si原子的密度设定为1×1016 cm以下 -3，由此可以使母体为GaAs单晶的半导体元件的特性均匀。

14. 发明授权

US5689494A Surface atom fabrication method and apparatus 失效
标题翻译：表面原子的制造方法和装置
公开(公告)号：US5689494A
公开(公告)日：1997-11-18
申请号：US441700
申请日：1995-05-15
申请人： Masakazu Ichikawa , Shigeyuki Hosoki , Fumihiko Uchida , Shigeo Kato , Yoshihisa Fujisaki , Sumiko Fujisaki , Atsushi Kikugawa , Ryo Imura , Hajime Aoi , Kiyokazu Nakagawa , Eiichi Murakami
发明人： Masakazu Ichikawa , Shigeyuki Hosoki , Fumihiko Uchida , Shigeo Kato , Yoshihisa Fujisaki , Sumiko Fujisaki , Atsushi Kikugawa , Ryo Imura , Hajime Aoi , Kiyokazu Nakagawa , Eiichi Murakami
IPC分类号： B82B3/00 , G01Q60/00 , G01Q80/00 , G01Q90/00 , G11B9/00 , G11B11/08 , G11B33/14 , H01J37/30 , H01J37/305 , H01J37/317 , G11B7/00
CPC分类号： G11B9/1436 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B11/08 , G11B33/14 , G11B9/00 , G11B9/14 , G11B9/1418 , G11B9/1445 , G11B9/1463 , G11B9/1472 , H01J37/3056 , H01J37/3174 , G01Q80/00 , H01J2237/31738 , H01J2237/31759 , Y10S977/856 , Y10S977/947
摘要： A fine-fabrication method of solid surfaces relates to a new surface fabrication method allows a solid-device surface to be fabricated at an atomic scale so as to produce an ultra-fine device or a device for recording information at an ultra-high density. A probe is installed with a tip thereof facing to the surface of a specimen to undergo fabrication. A voltage for forming an electric field is applied between the probe and the specimen. The electric field is large enough to field-evaporate atoms constituting the specimen or the probe; the electric field field-evaporates atoms constituting the specimen, removing them from the surface of the specimen; and as another alternative, the electric field field-evaporates atoms constituting the probe, depositing them on the surface of the specimen. Further, in another surface atom fabrication method, while the surface of a specimen is observed at an atomic scale using a surface observation technique by means of a scanning tunnelling microscope, a pulsative voltage large enough for the field evaporation of atoms described above is applied between the probe and the specimen at any arbitrary desired positions on the surface of the specimen; and the pulsative voltage field-evaporates and, hence, eliminates atoms one by one from the surface of the specimen.
摘要翻译：固体表面的精细制造方法涉及新的表面制造方法，可以以原子尺度制造固体器件表面，以便产生超细的器件或以超高密度记录信息的器件。安装探针，其尖端面向样品的表面进行制造。在探针和样品之间施加用于形成电场的电压。电场足够大以使构成样品或探针的原子挥发蒸发; 电场场蒸发构成样品的原子，将其从试样的表面除去; 并且作为另一种替代方案，电场场蒸发构成探针的原子，将它们沉积在样品的表面上。此外，在另一表面原子制造方法中，利用扫描隧道显微镜利用表面观察技术以原子尺度观察试样的表面，在上述原子的场蒸发之前足够大的脉动电压被施加在探针和样品在样品表面上任意任意的位置; 并且脉动电压场蒸发，因此从样品的表面逐个消除原子。

15. 发明授权

US5416331A Surface atom fabrication method and apparatus 失效
标题翻译：表面原子的制造方法和装置
公开(公告)号：US5416331A
公开(公告)日：1995-05-16
申请号：US934672
申请日：1992-09-11
申请人： Masakazu Ichikawa , Shigeyuki Hosoki , Fumihiko Uchida , Shigeo Kato , Yoshihisa Fujisaki , Sumiko Fujisaki , Atsushi Kikugawa , Ryo Imura , Hajime Aoi , Kiyokazu Nakagawa , Eiichi Murakami
发明人： Masakazu Ichikawa , Shigeyuki Hosoki , Fumihiko Uchida , Shigeo Kato , Yoshihisa Fujisaki , Sumiko Fujisaki , Atsushi Kikugawa , Ryo Imura , Hajime Aoi , Kiyokazu Nakagawa , Eiichi Murakami
IPC分类号： B82B3/00 , G01Q60/00 , G01Q80/00 , G01Q90/00 , G11B9/00 , G11B11/08 , G11B33/14 , H01J37/30 , H01J37/305 , H01J37/317
CPC分类号： G11B9/1436 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B11/08 , G11B33/14 , G11B9/00 , G11B9/14 , G11B9/1418 , G11B9/1445 , G11B9/1463 , G11B9/1472 , H01J37/3056 , H01J37/3174 , G01Q80/00 , H01J2237/31738 , H01J2237/31759 , Y10S977/856 , Y10S977/947
摘要： A fine-fabrication method of solid surfaces relates to a new surface fabrication method allows a solid-device surface to be fabricated at an atomic scale so as to produce an ultra-fine device or a device for recording information at an ultra-high density. A probe is installed with a tip thereof facing to the surface of a specimen to undergo fabrication. A voltage for forming an electric field is applied between the probe and the specimen. The electric field is large enough to field-evaporate atoms constituting the specimen or the probe; the electric field field-evaporates atoms constituting the specimen, removing them from the surface of the specimen; and as another alternative, the electric field field-evaporates atoms constituting the probe, depositing them on the surface of the specimen. Further, in another surface atom fabrication method, while the surface of a specimen is observed at an atomic scale using a surface observation technique by means of a scanning tunnelling microscope, a pulsative voltage large enough for the field evaporation of atoms described above is applied between the probe and the specimen at any arbitrary desired positions on the surface of the specimen; and the pulsative voltage field-evaporates and, hence, eliminates atoms one by one from the surface of the specimen.
摘要翻译： PCT No.PCT / JP92 / 00015 Sec。 371日期：1992年9月11日 102（e）1992年9月11日PCT PCT 1991年1月10日PCT公布。公开号WO92 / 12528 日期：1992年7月23日。固体表面的精细制造方法涉及新的表面制造方法，可以以原子尺度制造固体器件表面，以便制造超精细器件或用于记录信息的器件超高密度。安装探针，其尖端面向样品的表面进行制造。在探针和样品之间施加用于形成电场的电压。电场足够大以使构成样品或探针的原子挥发蒸发; 电场场蒸发构成样品的原子，将其从试样的表面除去; 并且作为另一种替代方案，电场场蒸发构成探针的原子，将它们沉积在样品的表面上。此外，在另一表面原子制造方法中，利用扫描隧道显微镜利用表面观察技术以原子尺度观察试样的表面，在上述原子的场蒸发之前足够大的脉动电压被施加在探针和样品在样品表面上任意任意的位置; 并且脉动电压场蒸发，因此从样品的表面逐个消除原子。

16. 发明授权

US4665528A Distributed-feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件
公开(公告)号：US4665528A
公开(公告)日：1987-05-12
申请号：US681820
申请日：1984-12-14
申请人： Naoki Chinone , Shinji Tsuji , Yoshihisa Fujisaki , Yasutoshi Kashiwada , Motohisa Hirao
发明人： Naoki Chinone , Shinji Tsuji , Yoshihisa Fujisaki , Yasutoshi Kashiwada , Motohisa Hirao
IPC分类号： H01S5/00 , H01S5/10 , H01S5/12 , H01S5/183 , H01S3/19
CPC分类号： H01S5/1225 , H01S5/106 , H01S5/1215
摘要： Disclosed is a distributed feedback semiconductor laser provided with a grating which effects optical feedback by means of periodic corrugation disposed inside an optical resonator. The optical resonator has at least two regions having different bragg wavelength, and these regions are arranged longitudinally in the direction of an optical axis. The laser device can realize stable single longitudinal mode oscillation.
摘要翻译：公开了一种具有光栅的分布反馈半导体激光器，其通过设置在光学谐振器内部的周期性波纹来实现光学反馈。光谐振器具有至少两个具有不同布拉格波长的区域，并且这些区域沿光轴方向纵向布置。激光装置可以实现稳定的单纵模振荡。

17. 发明授权

US07859896B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07859896B2
公开(公告)日：2010-12-28
申请号：US12162702
申请日：2006-02-02
申请人： Kenzo Kurotsuchi , Norikatsu Takaura , Yoshihisa Fujisaki
发明人： Kenzo Kurotsuchi , Norikatsu Takaura , Yoshihisa Fujisaki
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/0073 , G11C2013/0078 , G11C2213/79 , H01L27/24
摘要： A semiconductor device for high-speed reading and which has a high data-retention characteristic is provided. In a semiconductor device including a memory array having a plurality of memory cells provided at intersecting points of a plurality of word lines and a plurality of bit lines, where each memory cell includes an information memory section and a select element, information is programmed by a first pulse (reset operation) for programming information flowing in the bit line, a second pulse (set operation) different from the first pulse, and information is read by a third pulse (read operation), such that the current directions of the second pulse and the third pulse are opposite to each other.
摘要翻译：提供了一种用于高速读取并具有高数据保持特性的半导体器件。在包括具有设置在多个字线和多个位线的交叉点的多个存储单元的存储器阵列的半导体器件中，其中每个存储器单元包括信息存储器部分和选择元件，信息由用于对在位线中流动的信息进行编程的第一脉冲（复位操作），与第一脉冲不同的第二脉冲（设置操作），并且通过第三脉冲（读取操作）读取信息，使得第二脉冲并且第三脉冲彼此相反。

18. 发明授权

US07767997B2 Semiconductor device with solid electrolyte switching 失效
标题翻译：具有固体电解质开关的半导体器件
公开(公告)号：US07767997B2
公开(公告)日：2010-08-03
申请号：US12169818
申请日：2008-07-09
申请人： Yoshitaka Sasago , Motoyasu Terao , Norikatsu Takaura , Yoshihisa Fujisaki , Tomoyuki Kodama , Nobuyuki Arasawa
发明人： Yoshitaka Sasago , Motoyasu Terao , Norikatsu Takaura , Yoshihisa Fujisaki , Tomoyuki Kodama , Nobuyuki Arasawa
IPC分类号： H01L29/06 , H01L29/08
CPC分类号： H01L45/1206 , G06N3/063 , G11C13/0011 , H01L45/085 , H01L45/142 , H01L45/146 , H01L45/1675
摘要： A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in the solid electrolyte capable of easily moving within the solid electrolyte, and those electrodes face each other and applying a voltage switches the voltage on and off by generating or annihilating the conductive path between the electrodes. Moreover applying a voltage to a separate third electrode can annihilate the conductive path formed between two electrodes without applying a voltage to the two electrode joined by the conductive path.
摘要翻译：具有小表面积的非易失性，复杂的半导体器件和能够切换三个或更多个电极之间的连接的简单结构。在半导体器件中，电极中的至少一个在固体电解质中含有诸如铜或银之类的原子，能够容易地在固体电解质内移动，并且这些电极彼此面对并且施加电压通过产生或消除电压来开启和关闭电压电极之间的导电路径。此外，向单独的第三电极施加电压可以消除在两个电极之间形成的导电路径，而不向由导电路径连接的两个电极施加电压。

19. 发明申请

US20100012917A1 SEMICONDUCTOR DEVIC 失效
标题翻译：半导体器件
公开(公告)号：US20100012917A1
公开(公告)日：2010-01-21
申请号：US12302740
申请日：2006-05-31
申请人： Norikatsu Takaura , Yuichi Matsui , Motoyasu Terao , Yoshihisa Fujisaki , Nozomu Matsuzaki , Kenzo Kurotsuchi , Takahiro Morikawa
发明人： Norikatsu Takaura , Yuichi Matsui , Motoyasu Terao , Yoshihisa Fujisaki , Nozomu Matsuzaki , Kenzo Kurotsuchi , Takahiro Morikawa
IPC分类号： H01L47/00
CPC分类号： G11C13/0004 , G11C8/08 , G11C13/0028 , G11C2213/79 , H01L27/2436 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： On an insulating film (41) in which a plug (43) as a lower electrode is embedded, a laminated layer pattern of an insulating film (51) made of tantalum oxide, a recording layer (52) made of Ge—Sb—Te based chalcogenide to which indium is introduced and an upper electrode film (53) made of tungsten or tungsten alloy is formed, thereby forming a phase change memory. By interposing the insulating film (51) between the recording layer (52) and the plug (43), an effect of reducing programming current of a phase change memory and an effect of preventing peeling of the recording layer (52) can be achieved. Further, by using the Ge—Sb—Te based chalcogenide to which indium is introduced as the recording layer (52), the difference in work function between the insulating film (51) and the recording layer (52) is increased, and the programming voltage of the phase change memory can be reduced.
摘要翻译：在嵌入作为下电极的插头（43）的绝缘膜（41）上，由氧化钽构成的绝缘膜（51）的叠层图案，由Ge-Sb-Te制成的记录层（52）引入铟的硫属化合物和由钨或钨合金制成的上电极膜（53），从而形成相变存储器。通过将绝缘膜（51）插入在记录层（52）和插塞（43）之间，可以实现降低相变存储器的编程电流的效果和防止记录层（52）的剥离的效果。此外，通过使用引入了铟的Ge-Sb-Te类硫族化物作为记录层（52），绝缘膜（51）和记录层（52）之间的功函数差增大，编程可以减小相变存储器的电压。

20. 发明申请

US20090242868A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090242868A1
公开(公告)日：2009-10-01
申请号：US12370417
申请日：2009-02-12
申请人： Kenzo KUROTSUCHI , Motoyasu TERAO , Norikatsu TAKAURA , Yoshihisa FUJISAKI , Kazuo ONO , Yoshitaka SASAGO
发明人： Kenzo KUROTSUCHI , Motoyasu TERAO , Norikatsu TAKAURA , Yoshihisa FUJISAKI , Kazuo ONO , Yoshitaka SASAGO
IPC分类号： H01L45/00 , H01L21/28
CPC分类号： H01L45/085 , H01L27/2436 , H01L27/2463 , H01L45/1233 , H01L45/1266 , H01L45/147 , H01L45/1625 , H01L45/1641
摘要： A solid electrolyte memory involves a problem that stable rewriting is difficult since the amount of ions in the solid electrolyte and the shape of the electrode are changed by repeating rewriting. In a semiconductor device in which information is stored or the circuit connection is changed by the change of resistance of the solid electrolyte layer, the solid electrolyte layer includes a composition, for example, of Cu—Ta—S and an ion supply layer in adjacent or close therewith as Cu—Ta—O, in which ions supplied from the ion supply layer form a conduction path in the solid electrolyte layer thereby making it possible to store information by the level of the resistance and applying the electric pulse to change the resistance, in which the ion supply layer includes crystals having, for example, a compositional ratio of: Cu—Ta—O=1:2:6 and rewriting operation can be performed stably.
摘要翻译：固体电解质存储器存在难以稳定重写的问题，因为固体电解质中的离子量和电极的形状通过重复改写而改变。在存储信息或通过固体电解质层的电阻变化来改变电路连接的半导体器件中，固体电解质层包括例如Cu-Ta-S的组合物和相邻的Cu-Ta-S的离子供给层或与其接近的Cu-Ta-O，其中从离子供给层供给的离子在固体电解质层中形成传导路径，从而可以通过电阻水平存储信息并施加电脉冲以改变电阻，其中离子供给层包括例如以Cu-Ta-O = 1:2:6的组成比的晶体，并且可以稳定地进行重写操作。

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