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11. 发明申请

US20070227699A1 Method, apparatus and system for flow distribution through a heat exchanger 审中-公开
标题翻译：通过热交换器流量分配的方法，装置和系统
公开(公告)号：US20070227699A1
公开(公告)日：2007-10-04
申请号：US11394822
申请日：2006-03-31
申请人： Yoshifumi Nishi
发明人： Yoshifumi Nishi
IPC分类号： F28F1/24 , F28D15/02
CPC分类号： F28D15/0266 , F28F1/24
摘要： A method, apparatus and system are described for flow distribution through a heat exchanger. The system may include a chassis and an apparatus. The apparatus may include a heat exchanger, and a cold plate. In some embodiments, a pump may provide for the flow of the fluid between the heat exchanger and the cold plate. In some embodiments, the heat exchanger may include a tube to transport a first fluid, a plurality of fins coupled to the tube to facilitate transfer of thermal energy from the first fluid to the plurality of fins, and a gate coupled to the plurality of fins to direct flow of a second fluid through passages between the fins, where the gate includes a deformable laminate of a plurality of layers having different coefficients of thermal expansion, the plurality of layers being bonded to one another. Other embodiments may be described.
摘要翻译：描述了通过热交换器的流量分配的方法，装置和系统。该系统可以包括底盘和装置。该装置可以包括热交换器和冷板。在一些实施例中，泵可以提供热交换器和冷板之间的流体流。在一些实施例中，热交换器可以包括用于输送第一流体的管，耦合到管的多个翅片以便于将热能从第一流体传递到多个翅片，以及耦合到多个翅片的门引导第二流体通过翅片之间的通道的流动，其中门包括具有不同热膨胀系数的多个层的可变形层压体，多个层彼此结合。可以描述其他实施例。

12. 发明授权

US08816448B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08816448B2
公开(公告)日：2014-08-26
申请号：US12609805
申请日：2009-10-30
申请人： Yoshifumi Nishi , Atsuhiro Kinoshita
发明人： Yoshifumi Nishi , Atsuhiro Kinoshita
IPC分类号： H01L29/78
CPC分类号： H01L29/6659 , H01L21/265 , H01L21/28052 , H01L21/28518 , H01L21/28537 , H01L21/823814 , H01L21/823821 , H01L21/823842 , H01L27/095 , H01L29/66507 , H01L29/7833
摘要： A semiconductor device including a semiconductor substrate, an interface layer formed on the semiconductor substrate including at least 1×1020 atoms/cm3 of S (Sulfur), a metal-semiconductor compound layer formed on the interface layer, the metal-semiconductor compound layer including at least 1×1020 atoms/cm3 of S in the its whole depth, and a metal electrode formed on the metal-semiconductor compound layer.
摘要翻译：一种半导体器件，包括半导体衬底，形成在所述半导体衬底上的界面层，所述界面层至少包含1×1020原子/ cm3的S（硫），在所述界面层上形成的金属 - 半导体化合物层，所述金属 - 半导体化合物层包括在整个深度上至少为1×1020原子/ cm3的S，以及形成在金属 - 半导体化合物层上的金属电极。

13. 发明授权

US08553464B2 Nonvolatile programmable logic switch 有权
标题翻译：非易失性可编程逻辑开关
公开(公告)号：US08553464B2
公开(公告)日：2013-10-08
申请号：US13240087
申请日：2011-09-22
申请人： Yoshifumi Nishi , Daisuke Hagishima , Shinichi Yasuda , Tetsufumi Tanamoto , Takahiro Kurita , Atsuhiro Kinoshita , Shinobu Fujita
发明人： Yoshifumi Nishi , Daisuke Hagishima , Shinichi Yasuda , Tetsufumi Tanamoto , Takahiro Kurita , Atsuhiro Kinoshita , Shinobu Fujita
IPC分类号： G11C11/35
CPC分类号： H01L27/11568 , G11C16/0458 , G11C16/10 , H01L27/11573 , H01L27/11803
摘要： An aspect of the present embodiment, there is provided a nonvolatile programmable logic switch including a first memory cell transistor, a second memory cell transistor, a pass transistor and a first substrate electrode applying a substrate voltage to the pass transistor, wherein a writing voltage is applied to the first wiring, a first voltage is applied to one of a second wiring and a third wiring and a second voltage which is lower than the first voltage is applied to the other of the second wiring and the third wiring, and the first substrate voltage which is higher than the second voltage and lower than the first voltage is applied to a well of the pass transistor, when data is written into the first memory cell transistor or the second memory cell transistor.
摘要翻译：本实施例的一个方面提供了一种非易失性可编程逻辑开关，包括第一存储单元晶体管，第二存储单元晶体管，传输晶体管和向该通过晶体管施加衬底电压的第一衬底电极，其中写入电压为施加到第一布线，第一电压施加到第二布线和第三布线中的一个，并且低于第一电压的第二电压施加到第二布线和第三布线中的另一布线，第一基板当数据被写入第一存储单元晶体管或第二存储单元晶体管时，高于第二电压并低于第一电压的电压被施加到传输晶体管的阱。

14. 发明申请

US20130234088A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20130234088A1
公开(公告)日：2013-09-12
申请号：US13728552
申请日：2012-12-27
申请人： Yoshifumi Nishi , Takao Marukame , Takayuki Ishikawa , Masato Koyama
发明人： Yoshifumi Nishi , Takao Marukame , Takayuki Ishikawa , Masato Koyama
IPC分类号： H01L45/00
CPC分类号： H01L45/14 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/16
摘要： According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material.
摘要翻译：根据实施例，半导体器件包括第一和第二忆阻器。第一忆阻器包括由第一材料制成的第一电极，由第二材料制成的第二电极和布置在第一和第二电极之间的第一电阻切换膜。第一电阻开关膜连接到第一和第二电极。第二忆阻器包括由第三材料制成的第三电极，由第二材料制成的第四电极和布置在第三和第四电极之间的第二电阻切换膜。第二电阻开关膜连接到第三和第四电极。第一材料的功函数小于第二材料的功函数。第三种材料的功函数大于第二种材料的功函数。

15. 发明申请

US20130234087A1 NON-VOLATILE RESISTANCE CHANGE DEVICE 审中-公开
标题翻译：非易失性电阻变化器件
公开(公告)号：US20130234087A1
公开(公告)日：2013-09-12
申请号：US13605917
申请日：2012-09-06
申请人： Takashi Yamauchi , Yoshifumi Nishi , Jiezhi Chen , Akira Takashima , Minoru Amano
发明人： Takashi Yamauchi , Yoshifumi Nishi , Jiezhi Chen , Akira Takashima , Minoru Amano
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/1233 , H01L45/148 , H01L45/1675
摘要： A non-volatile resistance change device includes a first electrode made of a metallic element, a second electrode, a variable resistance layer formed between the first electrode and the second electrode, first wiring formed on the first electrode on a side opposite to the variable resistance layer, and second wiring formed on the second electrode on a side opposite to the variable resistance layer. If the width of the first wiring is represented as A (nm), the width of the second wiring represented as B (nm), and the distance between the first electrode and the second electrode represented as L0 (nm), the following equation is satisfied: 3 2  AB
摘要翻译：非易失性电阻变化装置包括由金属元件构成的第一电极，第二电极，形成在第一电极和第二电极之间的可变电阻层，在与可变电阻相反的一侧形成在第一电极上的第一布线层和在与可变电阻层相反的一侧形成在第二电极上的第二布线。如果将第一布线的宽度表示为A（nm），则表示为B（nm）的第二布线的宽度以及表示为L0（nm）的第一电极和第二电极之间的距离，下式为满意：3 2 AB

16. 发明申请

US20100051906A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20100051906A1
公开(公告)日：2010-03-04
申请号：US12549140
申请日：2009-08-27
申请人： Takashi Yamauchi , Yoshifumi Nishi , Hiroto Honda , Kei Masunishi , Shinji Murai , Masumi Saitoh
发明人： Takashi Yamauchi , Yoshifumi Nishi , Hiroto Honda , Kei Masunishi , Shinji Murai , Masumi Saitoh
IPC分类号： H01L31/0352
CPC分类号： H01L27/14645 , H01L27/14683 , H01L31/0352
摘要： A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.
摘要翻译：提供了用于校正输入信号并输出校正信号的半导体器件。半导体器件包括半导体层，形成在半导体层的一个表面上并用作输入信号的输入端的多个第一导体，第二导体的数量大于第一导体的密度高于在半导体层的另一面形成的第一导体的第一导体的高杂质浓度区域设置在第二导体和半导体层之间的界面的半导体层侧，形成在另一面上的绝缘层，多个第三导体，形成在绝缘层上并用作用于输出处理信号的输出端。

17. 发明授权

US07443670B2 Systems for improved blower fans 失效
标题翻译：改进鼓风机系统
公开(公告)号：US07443670B2
公开(公告)日：2008-10-28
申请号：US11030930
申请日：2005-01-07
申请人： Yoshifumi Nishi , Masahiro Kuroda , Sridhar V. Machiroutu , Himanshu Pokharna , Karen Stafford
发明人： Yoshifumi Nishi , Masahiro Kuroda , Sridhar V. Machiroutu , Himanshu Pokharna , Karen Stafford
IPC分类号： H05K7/20
CPC分类号： G06F1/203 , F04D29/162 , F04D29/4213 , F04D29/4226
摘要： According to some embodiments, systems for improved blower fans are provided. In some embodiments, systems may include a casing comprising an inlet to accept a fluid and an outlet to evacuate the fluid. The systems may further comprise an impeller disposed within the casing, comprising a hub and one or more impeller blades coupled to the hub. In some embodiments, the inlet of the casing may be shaped to reduce the amount of fluid that evacuates the casing via the inlet due to pressure within the casing.
摘要翻译：根据一些实施例，提供了用于改进的鼓风机的系统。在一些实施例中，系统可以包括壳体，其包括用于接收流体的入口和用于排出流体的出口。所述系统还可以包括设置在壳体内的叶轮，包括轮毂和联接到轮毂的一个或多个叶轮叶片。在一些实施例中，壳体的入口可以成形为减小由于壳体内的压力而通过入口排出壳体的流体的量。

18. 发明申请

US20080230804A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080230804A1
公开(公告)日：2008-09-25
申请号：US12036703
申请日：2008-02-25
申请人： Yoshifumi Nishi , Takashi Yamauchi , Yoshinori Tsuchiya , Junji Koga
发明人： Yoshifumi Nishi , Takashi Yamauchi , Yoshinori Tsuchiya , Junji Koga
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/872 , H01L21/283
CPC分类号： H01L29/47 , H01L21/28518 , H01L21/76814 , H01L21/823814 , H01L21/823835 , H01L29/475
摘要： A semiconductor device having an electrode with reduced electrical contact resistance even where either electrons or holes are majority carriers is disclosed. This device has an n-type diffusion layer and a p-type diffusion layer in a top surface of a semiconductor substrate. The device also has first and second metal wires patterned to overlie the n-type and p-type diffusion layers, respectively, with a dielectric layer interposed therebetween, a first contact electrode for electrical connection between the n-type diffusion layer and the first metal wire, and a second contact electrode for connection between the p-type diffusion layer and the second metal wire. The first contact electrode's portion in contact with the n-type diffusion layer and the second contact electrode's portion contacted with the p-type diffusion layer are each formed of a first conductor that contains a metal and a second conductor containing a rare earth metal.
摘要翻译：公开了一种半导体器件，其具有即使电子或空穴为多数载流子的具有降低的电接触电阻的电极。该器件在半导体衬底的顶表面中具有n型扩散层和p型扩散层。该装置还具有图案化的第一和第二金属线分别覆盖在n型和p型扩散层之间，介于其间的介电层，用于在n型扩散层和第一金属之间电连接的第一接触电极电线和用于在p型扩散层和第二金属线之间连接的第二接触电极。与n型扩散层接触的第一接触电极部分和与p型扩散层接触的第二接触电极部分分别由包含金属的第一导体和含有稀土金属的第二导体形成。

19. 发明申请

US20080049394A1 Method, apparatus and computer system for air mover configuration 审中-公开
标题翻译：风机配置方法，装置和计算机系统
公开(公告)号：US20080049394A1
公开(公告)日：2008-02-28
申请号：US11509110
申请日：2006-08-23
申请人： Yoshifumi Nishi
发明人： Yoshifumi Nishi
IPC分类号： G05D23/00 , H05K7/20
CPC分类号： G05D23/19 , G06F1/20
摘要： Some embodiments of a method, apparatus and computer system are described for configuring one or more air movers. A computer system may include a housing and an air mover coupled to an electronic device and positioned in relative proximity to an electronic component. In some embodiments, the air mover has an intake region, and is configured such that the intake region may include a first bisection larger than a second bisection. In some embodiments, a configuration module may be coupled to the air mover, such that the configuration module may alter the configuration of the air mover such that the intake region is altered. Other embodiments are described.
摘要翻译：描述了一种方法，装置和计算机系统的一些实施例，用于配置一个或多个鼓风机。计算机系统可以包括壳体和联接到电子设备并且相对靠近电子部件定位的空气推动器。在一些实施例中，空气移动器具有进气区域，并且被构造成使得进气区域可以包括大于第二平分度的第一二分线。在一些实施例中，配置模块可以联接到空气推动器，使得配置模块可以改变空气推动器的构造，使得进气区域被改变。描述其他实施例。

20. 发明申请

US20070247906A1 Fin type memory cell 审中-公开
标题翻译：鳍式存储单元
公开(公告)号：US20070247906A1
公开(公告)日：2007-10-25
申请号：US11723335
申请日：2007-03-19
申请人： Hiroshi Watanabe , Yoshifumi Nishi , Atsuhiro Kinoshita
发明人： Hiroshi Watanabe , Yoshifumi Nishi , Atsuhiro Kinoshita
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , H01L27/115 , H01L27/11519 , H01L29/785
摘要： A Fin-type memory cell according to an example of the present invention includes a fin-shaped active area, a floating gate along a side surface of the fin-shaped active area, and two control gate electrodes arranged in a longitudinal direction of the fin-shaped active area, and sandwiching the floating gate.
摘要翻译：根据本发明的实施例的鳍型存储单元包括鳍状有源区域，沿着鳍状有源区域的侧表面的浮置栅极和沿翅片的纵向布置的两个控制栅极电极形状的活动区域，并夹着浮动门。

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