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1. 发明授权

US08658999B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08658999B2
公开(公告)日：2014-02-25
申请号：US13728552
申请日：2012-12-27
申请人： Yoshifumi Nishi , Takao Marukame , Takayuki Ishikawa , Masato Koyama
发明人： Yoshifumi Nishi , Takao Marukame , Takayuki Ishikawa , Masato Koyama
IPC分类号： H01L29/02
CPC分类号： H01L45/14 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/16
摘要： According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material.
摘要翻译：根据实施例，半导体器件包括第一和第二忆阻器。第一忆阻器包括由第一材料制成的第一电极，由第二材料制成的第二电极和布置在第一和第二电极之间的第一电阻切换膜。第一电阻开关膜连接到第一和第二电极。第二忆阻器包括由第三材料制成的第三电极，由第二材料制成的第四电极和布置在第三和第四电极之间的第二电阻切换膜。第二电阻开关膜连接到第三和第四电极。第一材料的功函数小于第二材料的功函数。第三种材料的功函数大于第二种材料的功函数。

2. 发明申请

US20130234088A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20130234088A1
公开(公告)日：2013-09-12
申请号：US13728552
申请日：2012-12-27
申请人： Yoshifumi Nishi , Takao Marukame , Takayuki Ishikawa , Masato Koyama
发明人： Yoshifumi Nishi , Takao Marukame , Takayuki Ishikawa , Masato Koyama
IPC分类号： H01L45/00
CPC分类号： H01L45/14 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/16
摘要： According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material.
摘要翻译：根据实施例，半导体器件包括第一和第二忆阻器。第一忆阻器包括由第一材料制成的第一电极，由第二材料制成的第二电极和布置在第一和第二电极之间的第一电阻切换膜。第一电阻开关膜连接到第一和第二电极。第二忆阻器包括由第三材料制成的第三电极，由第二材料制成的第四电极和布置在第三和第四电极之间的第二电阻切换膜。第二电阻开关膜连接到第三和第四电极。第一材料的功函数小于第二材料的功函数。第三种材料的功函数大于第二种材料的功函数。

3. 发明授权

US09112132B2 Resistance-variable memory device 有权
标题翻译：电阻变量存储器件
公开(公告)号：US09112132B2
公开(公告)日：2015-08-18
申请号：US13605746
申请日：2012-09-06
申请人： Takayuki Ishikawa , Yoshifumi Nishi , Dalsuke Matsushita , Masato Koyama
发明人： Takayuki Ishikawa , Yoshifumi Nishi , Dalsuke Matsushita , Masato Koyama
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/145
摘要： A memory device includes a first electrode, a second electrode, a third electrode, a first variable resistance layer between the first electrode and the third electrode, and a second variable resistance layer between the second electrode and the third electrode. The first, second, and third electrodes, and the first and second variable resistance layers are formed of materials that cause the first variable resistance layer to transition from a high resistance state to a low resistance state when a voltage is applied across the first and second electrodes and maintain the high resistance state when the voltage is cut off, and cause the second variable resistance layer to transition from a high resistance state to a low resistance state when the voltage is applied across the first and second electrodes and transition from the high resistance state to the low resistance state when the voltage is cut off.
摘要翻译：存储器件包括第一电极，第二电极，第三电极，第一电极和第三电极之间的第一可变电阻层，以及在第二电极和第三电极之间的第二可变电阻层。第一，第二和第三电极以及第一和第二可变电阻层由当第一和第二电极层施加电压时使第一可变电阻层从高电阻状态转变为低电阻状态的材料形成电极，当电压被切断时保持高电阻状态，并且当电压施加在第一和第二电极两端并从高电阻转变时，使第二可变电阻层从高电阻状态转变到低电阻状态当电压被切断时，状态为低电阻状态。

4. 发明申请

US20130250656A1 RESISTANCE-VARIABLE MEMORY DEVICE 有权
标题翻译：电阻可变存储器件
公开(公告)号：US20130250656A1
公开(公告)日：2013-09-26
申请号：US13605746
申请日：2012-09-06
申请人： Takayuki ISHIKAWA , Yoshifumi Nishi , Daisuke Matsushita , Masato Koyama
发明人： Takayuki ISHIKAWA , Yoshifumi Nishi , Daisuke Matsushita , Masato Koyama
IPC分类号： H01L45/00 , G11C11/21
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/145
摘要： A memory device includes a first electrode, a second electrode, a third electrode, a first variable resistance layer between the first electrode and the third electrode, and a second variable resistance layer between the second electrode and the third electrode. The first, second, and third electrodes, and the first and second variable resistance layers are formed of materials that cause the first variable resistance layer to transition from a high resistance state to a low resistance state when a voltage is applied across the first and second electrodes and maintain the high resistance state when the voltage is cut off, and cause the second variable resistance layer to transition from a high resistance state to a low resistance state when the voltage is applied across the first and second electrodes and transition from the high resistance state to the low resistance state when the voltage is cut off.
摘要翻译：存储器件包括第一电极，第二电极，第三电极，第一电极和第三电极之间的第一可变电阻层，以及在第二电极和第三电极之间的第二可变电阻层。第一，第二和第三电极以及第一和第二可变电阻层由当第一和第二电极层施加电压时使第一可变电阻层从高电阻状态转变为低电阻状态的材料形成电极，当电压被切断时保持高电阻状态，并且当电压施加在第一和第二电极两端并从高电阻转变时，使第二可变电阻层从高电阻状态转变到低电阻状态当电压被切断时，状态为低电阻状态。

5. 发明申请

US20120117354A1 STORAGE DEVICE IN WHICH FORWARDING-FUNCTION-EQUIPPED MEMORY NODES ARE MUTUALLY CONNECTED AND DATA PROCESSING METHOD 有权
标题翻译：存储设备，其中前向功能的存储器端口被连接和数据处理方法
公开(公告)号：US20120117354A1
公开(公告)日：2012-05-10
申请号：US13293399
申请日：2011-11-10
申请人： Kosuke Tatsumura , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki , Yoshifumi Nishi , Takao Marukame , Takahiro Kurita
发明人： Kosuke Tatsumura , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki , Yoshifumi Nishi , Takao Marukame , Takahiro Kurita
IPC分类号： G06F12/02
CPC分类号： H04L49/253 , G06F3/0605 , G06F3/0635 , G06F3/0656 , G06F3/0658 , G06F3/0683 , H04L12/6418 , H04L45/74
摘要： According to one embodiment, a storage device includes a plurality of memory nodes. Each of memory nodes includes a plurality of input ports, a plurality of output ports, a selector, a packet controller and a memory. The selector outputs a packet input to the input port to one of the output ports. The packet controller controls the selector. The memory stores data. The memory nodes are mutually connected at the input ports and the output ports. The memory node has an address that is determined by its physical position. The packet controller switches the output port that outputs the packet based on information including at least a destination address of the packet and an address of the memory node having the packet controller when receiving a packet that is not addressed to the memory node having the packet controller.
摘要翻译：根据一个实施例，存储设备包括多个存储器节点。每个存储器节点包括多个输入端口，多个输出端口，选择器，分组控制器和存储器。选择器将输入到输入端口的数据包输出输出到其中一个输出端口。分组控制器控制选择器。内存存储数据。存储器节点在输入端口和输出端口相互连接。存储器节点具有由其物理位置确定的地址。当接收到没有寻址到具有分组控制器的存储器节点的分组时，分组控制器基于包括分组的目的地地址的信息和具有分组控制器的存储器节点的地址来切换输出分组的输出端口。

6. 发明授权

US09246709B2 Storage device in which forwarding-function-equipped memory nodes are mutually connected and data processing method 有权
标题翻译：具有转发功能的存储器节点相互连接的存储设备和数据处理方法
公开(公告)号：US09246709B2
公开(公告)日：2016-01-26
申请号：US13293399
申请日：2011-11-10
申请人： Kosuke Tatsumura , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki , Yoshifumi Nishi , Takao Marukame , Takahiro Kurita
发明人： Kosuke Tatsumura , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki , Yoshifumi Nishi , Takao Marukame , Takahiro Kurita
IPC分类号： G06F12/02 , H04L12/64 , G06F3/06
CPC分类号： H04L49/253 , G06F3/0605 , G06F3/0635 , G06F3/0656 , G06F3/0658 , G06F3/0683 , H04L12/6418 , H04L45/74
摘要： According to one embodiment, a storage device includes a plurality of memory nodes. Each of memory nodes includes a plurality of input ports, a plurality of output ports, a selector, a packet controller and a memory. The selector outputs a packet input to the input port to one of the output ports. The packet controller controls the selector. The memory stores data. The memory nodes are mutually connected at the input ports and the output ports. The memory node has an address that is determined by its physical position. The packet controller switches the output port that outputs the packet based on information including at least a destination address of the packet and an address of the memory node having the packet controller when receiving a packet that is not addressed to the memory node having the packet controller.
摘要翻译：根据一个实施例，存储设备包括多个存储器节点。每个存储器节点包括多个输入端口，多个输出端口，选择器，分组控制器和存储器。选择器将输入到输入端口的数据包输出输出到其中一个输出端口。分组控制器控制选择器。内存存储数据。存储器节点在输入端口和输出端口相互连接。存储器节点具有由其物理位置确定的地址。当接收到没有寻址到具有分组控制器的存储器节点的分组时，分组控制器基于包括分组的目的地地址的信息和具有分组控制器的存储器节点的地址来切换输出分组的输出端口。

7. 发明授权

US09472756B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US09472756B2
公开(公告)日：2016-10-18
申请号：US13714946
申请日：2012-12-14
申请人： Takayuki Ishikawa , Yoshifumi Nishi , Shosuke Fujii
发明人： Takayuki Ishikawa , Yoshifumi Nishi , Shosuke Fujii
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/148 , H01L45/165 , H01L45/1658
摘要： According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, a variable resistance layer. The variable resistance layer is provided between the first electrode and the second electrode. The variable resistance layer contains impurity of a nonmetallic element. The impurity is at least one selected from the group consisting of S, Se, Te, F, Cl, Br, and I.
摘要翻译：根据一个实施例，非易失性存储器件包括第一电极，第二电极，可变电阻层。可变电阻层设置在第一电极和第二电极之间。可变电阻层含有非金属元素的杂质。杂质是选自S，Se，Te，F，Cl，Br和I中的至少一种。

8. 发明申请

US20130228736A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20130228736A1
公开(公告)日：2013-09-05
申请号：US13599504
申请日：2012-08-30
申请人： Daisuke MATSUSHITA , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
发明人： Daisuke MATSUSHITA , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.
摘要翻译：根据一个实施例，存储器件包括第一电极，第二电极和可变电阻膜。可变电阻膜连接在第一电极和第二电极之间。第一电极包括由导电材料制成的基体中所含的金属。金属的内聚能低于导电材料的内聚能。第一电极的宽度方向的中央部的金属浓度高于第一电极的宽度方向的两端部的金属的浓度。

9. 发明授权

US08664632B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US08664632B2
公开(公告)日：2014-03-04
申请号：US13599504
申请日：2012-08-30
申请人： Daisuke Matsushita , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
发明人： Daisuke Matsushita , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
IPC分类号： H01L47/00 , G11C11/00
CPC分类号： H01L45/1253 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.
摘要翻译：根据一个实施例，存储器件包括第一电极，第二电极和可变电阻膜。可变电阻膜连接在第一电极和第二电极之间。第一电极包括由导电材料制成的基体中所含的金属。金属的内聚能低于导电材料的内聚能。第一电极的宽度方向的中央部的金属浓度高于第一电极的宽度方向的两端部的金属的浓度。

10. 发明申请

US20170075422A1 Wearable Devices and Associated Control of Media Devices 审中-公开
标题翻译：可穿戴设备和媒体设备的相关控制
公开(公告)号：US20170075422A1
公开(公告)日：2017-03-16
申请号：US15125296
申请日：2014-06-09
申请人： Yanbing SUN , Jian WANG , Mark MACDONALD , Yoshifumi NISHI , Intel Corporation
发明人： Yanbing Sun , Jian Wang , Mark MacDonald , Yoshifumi Nishi
IPC分类号： G06F3/01 , H04R1/10 , G06F3/16
CPC分类号： G06F3/015 , G06F3/165 , H04R1/1016 , H04R1/1041 , H04R5/033
摘要： A wearable device (e.g., a headset (100)) for the human ear (202) and having an infrared (IR) temperature sensor (102) to facilitate control of a media device (700) coupled to the wearable device. The control may be based at least in part on the measured temperature indicated by the IR sensor (102) detecting the wearable device as on (or off) an ear of a user.
摘要翻译：一种用于人耳（202）并且具有红外（IR）温度传感器（102）的可穿戴设备（例如，头戴式耳机（100）），以便于耦合到可穿戴设备的媒体设备（700）的控制。控制可以至少部分地基于由用户的耳朵上的（或关闭）检测可穿戴设备的IR传感器（102）所指示的测量温度。

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