专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20080182417A1 PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY APPORTIONING GROUND RETURN PATH IMPEDANCES AMONG PLURAL VHF SOURCES 失效
标题翻译：等离子体过程通过分配地面返回路径在一个等离子体频率范围内均匀化
公开(公告)号：US20080182417A1
公开(公告)日：2008-07-31
申请号：US11733767
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.
摘要翻译：在等离子体反应器室中，天花板电极和工件支撑电极，各个VHF频率f1和f2的相应RF功率源耦合到电极中的相应电极或共同的一个电极，其中f1足够高以产生中心高的不均匀等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。提供各自的中心接地返回路径用于频率f1和f2直接通过天花板电极和工件支撑电极之间的RF电流，并为每个频率f1和f2提供边缘接地返回路径。调整至少一个接地返回路径的阻抗，以便控制等离子体离子密度分布的均匀性。

12. 发明申请

US20080180028A1 PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY CONTROLLING RF PHASE BETWEEN OPPOSING ELECTRODES 失效
标题翻译：通过控制电极之间的RF相位，通过控制等离子体等离子体处理的均匀性
公开(公告)号：US20080180028A1
公开(公告)日：2008-07-31
申请号：US11733770
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01J7/00
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
摘要翻译：提供了一种用于在等离子体反应器室中处理工件的方法。该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。该方法还包括提供边缘接地返回路径。该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

13. 发明授权

US07846846B2 Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls 失效
标题翻译：通过处理形成在开口侧壁上的聚合物来防止在高纵横比开口中的蚀刻轮廓弯曲和弯曲的方法
公开(公告)号：US07846846B2
公开(公告)日：2010-12-07
申请号：US11861032
申请日：2007-09-25
申请人： Kallol Bera , Kenny L. Doan , Stephan Wege , Subhash Deshmukh
发明人： Kallol Bera , Kenny L. Doan , Stephan Wege , Subhash Deshmukh
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32137 , H01J37/32449 , H01L21/76802
摘要： High aspect ratio contact openings are etched while preventing bowing or bending of the etch profile by forming a highly conductive thin film on the side wall of each contact opening. The conductivity of the thin film on the side wall is enhanced by ion bombardment carried out periodically during the etch process.
摘要翻译：通过在每个接触开口的侧壁上形成高导电性薄膜来蚀刻高纵横比接触开口，同时防止蚀刻轮廓弯曲或弯曲。通过在蚀刻工艺期间周期性地进行的离子轰击，增强了侧壁上薄膜的导电性。

14. 发明申请

US20060065632A1 Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequency 审中-公开
标题翻译：通过测量等离子体频率来监测等离子体处理系统中的处理的方法和装置
公开(公告)号：US20060065632A1
公开(公告)日：2006-03-30
申请号：US10952562
申请日：2004-09-27
申请人： Chia-Cheng Cheng , Timothy Guiney , Rao Annapragada , Subhash Deshmukh
发明人： Chia-Cheng Cheng , Timothy Guiney , Rao Annapragada , Subhash Deshmukh
IPC分类号： C23F1/00
CPC分类号： H01J37/3299 , H01J37/32082 , H01J37/32935
摘要： A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured plasma frequency that exists after the plasma is struck, the measured plasma frequency value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured plasma frequency value with an attribute of the process, if the measured plasma frequency value is outside of a predefined plasma frequency value envelope.
摘要翻译：公开了一种用于在具有等离子体处理室的等离子体处理系统中进行原位监测方法。该方法包括将基板定位在等离子体处理室中。该方法还包括在衬底设置在等离子体处理室内时在等离子体处理室内击打等离子体。该方法还包括获得在等离子体被击打之后存在的测量等离子体频率，当等离子体不存在时测量的等离子体频率值具有第一值，并且当存在等离子体时，获得与第一值不同的至少第二值。如果所测量的等离子体频率值在预定的等离子体频率值包络之外，则该方法还包括将所测量的等离子体频率值与该过程的属性相关联。

15. 发明申请

US20060065623A1 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage 有权
标题翻译：通过测量自偏压来监测等离子体处理系统中的工艺的方法和装置
公开(公告)号：US20060065623A1
公开(公告)日：2006-03-30
申请号：US10951553
申请日：2004-09-27
申请人： Timothy Guiney , Rao Annapragada , Subhash Deshmukh , Chia Cheng
发明人： Timothy Guiney , Rao Annapragada , Subhash Deshmukh , Chia Cheng
IPC分类号： G01L21/30 , H01L21/306 , H01L21/461
CPC分类号： H01J37/32935
摘要： A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured self-bias voltage that exists after the plasma is struck, the measured self-bias voltage value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured self-bias voltage value with an attribute of the process, if the measured self-bias voltage value is outside of a predefined self-bias voltage value envelope.
摘要翻译：公开了一种用于在具有等离子体处理室的等离子体处理系统中进行原位监测方法。该方法包括将基板定位在等离子体处理室中。该方法还包括在衬底设置在等离子体处理室内时在等离子体处理室内击打等离子体。该方法还包括获得在等离子体被击打之后存在的测量的自偏压，当等离子体不存在时，所测量的自偏压值具有第一值，当等离子体为等离子体时，获得与第一值不同的第二值当下。该方法还包括将所测量的自偏压值与该过程的属性相关联，如果所测量的自偏压值在预定义的自偏压值包络之外。

16. 发明授权

US08475625B2 Apparatus for etching high aspect ratio features 有权
公开(公告)号：US08475625B2
公开(公告)日：2013-07-02
申请号：US11381523
申请日：2006-05-03
申请人： Sharma Pamarthy , Huutri Dao , Xiaoping Zhou , Kelly A. McDonough , Jivko Dinev , Farid Abooameri , David E. Gutierrez , Jim Zhongyi He , Robert S. Clark , Dennis M. Koosau , Jeffrey William Dietz , Declan Scanlan , Subhash Deshmukh , John P. Holland , Alexander Paterson
发明人： Sharma Pamarthy , Huutri Dao , Xiaoping Zhou , Kelly A. McDonough , Jivko Dinev , Farid Abooameri , David E. Gutierrez , Jim Zhongyi He , Robert S. Clark , Dennis M. Koosau , Jeffrey William Dietz , Declan Scanlan , Subhash Deshmukh , John P. Holland , Alexander Paterson
IPC分类号： H01L21/3065
CPC分类号： H01J37/3266 , H01J37/3244 , H01J37/32706 , H01J2237/3347
摘要： Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

17. 发明申请

US20070256785A1 APPARATUS FOR ETCHING HIGH ASPECT RATIO FEATURES 有权
公开(公告)号：US20070256785A1
公开(公告)日：2007-11-08
申请号：US11381523
申请日：2006-05-03
申请人： Sharma Pamarthy , Huutri Dao , Xiaoping Zhou , Kelly McDonough , Jivko Dinev , Farid Abooameri , David Gutierrez , Jim He , Robert Clark , Dennis Koosau , Jeffrey Dietz , Declan Scanlan , Subhash Deshmukh , John Holland , Alexander Paterson
发明人： Sharma Pamarthy , Huutri Dao , Xiaoping Zhou , Kelly McDonough , Jivko Dinev , Farid Abooameri , David Gutierrez , Jim He , Robert Clark , Dennis Koosau , Jeffrey Dietz , Declan Scanlan , Subhash Deshmukh , John Holland , Alexander Paterson
IPC分类号： H01L21/306 , H01L21/302
CPC分类号： H01J37/3266 , H01J37/3244 , H01J37/32706 , H01J2237/3347
摘要： Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

18. 发明申请

US20100330805A1 METHODS FOR FORMING HIGH ASPECT RATIO FEATURES ON A SUBSTRATE 审中-公开
标题翻译：在基板上形成高比例特征的方法
公开(公告)号：US20100330805A1
公开(公告)日：2010-12-30
申请号：US11934589
申请日：2007-11-02
申请人： KENNY LINH DOAN , Kathryn Keswick , Subhash Deshmukh , Stephan Wege , Wonseok Lee
发明人： KENNY LINH DOAN , Kathryn Keswick , Subhash Deshmukh , Stephan Wege , Wonseok Lee
IPC分类号： H01L21/768
CPC分类号： H01L21/31116 , H01L21/31144
摘要： Methods for forming anisotropic features for high aspect ratio application in etch process are provided. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios. In one embodiment, a method for anisotropic etching a dielectric layer on a substrate includes providing a substrate having a patterned mask layer disposed on a dielectric layer in an etch chamber, supplying a gas mixture including at least a fluorine and carbon containing gas and a silicon fluorine gas into the etch chamber, and etching features in the dielectric layer in the presence of a plasma formed from the gas mixture.
摘要翻译：提供了用于在蚀刻工艺中形成用于高纵横比应用的各向异性特征的方法。本文所述的方法有利地有利于具有高纵横比的特征的轮廓和尺寸控制。在一个实施例中，用于各向异性蚀刻衬底上的电介质层的方法包括提供具有设置在蚀刻室中的电介质层上的图案化掩模层的衬底，提供至少包含含氟和含碳气体的气体混合物和硅氟气进入蚀刻室，并且在由气体混合物形成的等离子体的存在下蚀刻介电层中的特征。

19. 发明授权

US07323116B2 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage 有权
标题翻译：通过测量自偏压来监测等离子体处理系统中的工艺的方法和装置
公开(公告)号：US07323116B2
公开(公告)日：2008-01-29
申请号：US10951553
申请日：2004-09-27
申请人： Timothy J. Guiney , Rao Annapragada , Subhash Deshmukh , Chia Cheng Cheng
发明人： Timothy J. Guiney , Rao Annapragada , Subhash Deshmukh , Chia Cheng Cheng
IPC分类号： G01R31/00
CPC分类号： H01J37/32935
摘要： A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured self-bias voltage that exists after the plasma is struck, the measured self-bias voltage value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured self-bias voltage value with an attribute of the process, if the measured self-bias voltage value is outside of a predefined self-bias voltage value envelope.
摘要翻译：公开了一种用于在具有等离子体处理室的等离子体处理系统中进行原位监测方法。该方法包括将基板定位在等离子体处理室中。该方法还包括在衬底设置在等离子体处理室内时在等离子体处理室内击打等离子体。该方法还包括获得在等离子体被击打之后存在的测量的自偏压，当等离子体不存在时，所测量的自偏压值具有第一值，当等离子体为等离子体时，获得与第一值不同的第二值当下。该方法还包括将所测量的自偏压值与该过程的属性相关联，如果所测量的自偏压值在预定义的自偏压值包络之外。

20. 发明授权

US07084070B1 Treatment for corrosion in substrate processing 有权
标题翻译：处理基板加工腐蚀
公开(公告)号：US07084070B1
公开(公告)日：2006-08-01
申请号：US10623016
申请日：2003-07-17
申请人： Sangheon Lee , Sean S. Kang , S M Reza Sadjadi , Subhash Deshmukh , Ji Soo Kim
发明人： Sangheon Lee , Sean S. Kang , S M Reza Sadjadi , Subhash Deshmukh , Ji Soo Kim
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/76802 , H01L21/31111 , H01L21/31116 , H01L21/32137 , H01L21/32138 , H01L21/76807 , H01L21/7681 , H01L21/76814
摘要： A method for processing substrate to form a semiconductor device is disclosed. The substrate includes an etch stop layer disposed above a metal layer. The method includes etching through the etch stop layer down to the copper metal layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in the etch stop layer. The etch stop layer includes at least one of a SiN and SiC material. Thereafter, the method includes performing a wet treatment on the substrate using a solution that contains acetic acid (CH3COOH) or acetic acid/ammonium hydroxide (NH4OH) to remove at least some of the copper oxides. Alternatively, the copper oxides may be removed using a H2 plasma. BTA passivation may be optionally performed on the substrate.
摘要翻译：公开了一种用于处理基板以形成半导体器件的方法。衬底包括设置在金属层上方的蚀刻停止层。该方法包括使用利用含氯蚀刻剂源气体的等离子体蚀刻工艺将蚀刻停止层蚀刻到铜金属层下方，从而在蚀刻停止层中形成蚀刻停止层开口。蚀刻停止层包括SiN和SiC材料中的至少一种。此后，该方法包括使用含有乙酸（CH 3 COOH）或乙酸/氢氧化铵（NH 4 OH）的溶液对底物进行湿处理至去除至少一些铜氧化物。或者，可以使用H 2 O 3等离子体去除铜氧化物。可以任选地在衬底上进行BTA钝化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式