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21. 发明授权

US08368446B2 Delay locked loop 有权
标题翻译：延迟锁定环路
公开(公告)号：US08368446B2
公开(公告)日：2013-02-05
申请号：US13190841
申请日：2011-07-26
申请人： Jae-Min Jang , Yong-Ju Kim , Hae-Rang Choi
发明人： Jae-Min Jang , Yong-Ju Kim , Hae-Rang Choi
IPC分类号： H03L7/06
CPC分类号： H03L7/0814 , H03L7/0816 , H03L7/095 , H03L2207/14
摘要： A delay locked loop includes a delay unit delaying an input clock to generate an output clock, a replica delay unit delaying the output clock to generate a feedback clock, a phase comparing unit outputting a phase signal having a first or second value according to whether the phase of the feedback clock leads the phase of the input clock, a filtering unit generates a filtering signal in response to the phase signal and updates the filtering signal when a difference of count numbers of the phase signal having the first value and the second value is substantially equal to a filtering depth, a locking unit generates a locking signal in response to the filtering signal, and a control unit adjusts a delay value in response to the filtering signal and maintains the delay value when the locking signal is activated.
摘要翻译：延迟锁定环包括延迟单元延迟输入时钟以产生输出时钟，复制延迟单元延迟输出时钟以产生反馈时钟;相位比较单元，根据是否输出第一或第二值输出具有第一或第二值的相位信号反馈时钟的相位导致输入时钟的相位，滤波单元响应于相位信号产生滤波信号，并且当具有第一值和第二值的相位信号的计数数的差为基本上等于滤波深度，锁定单元响应于滤波信号产生锁定信号，并且控制单元响应于滤波信号调整延迟值，并且当锁定信号被激活时维持延迟值。

22. 发明授权

US08319520B2 On-die termination circuit 有权
标题翻译：片上终端电路
公开(公告)号：US08319520B2
公开(公告)日：2012-11-27
申请号：US13012972
申请日：2011-01-25
申请人： Yong Ju Kim , Hyung Soo Kim , Hae Rang Choi , Jae Min Jang
发明人： Yong Ju Kim , Hyung Soo Kim , Hae Rang Choi , Jae Min Jang
IPC分类号： H03K17/16
CPC分类号： H04L25/0298
摘要： An on-die termination circuit includes a reference period signal generation circuit that generates a reference period signal according to a level of a reference voltage, a first period signal generation circuit that generates a first period signal according to a voltage level of a pad, a period comparison circuit that compares a period of the first period signal with a period of the reference period signal and count a plurality of driving signals, and a driver circuit that drives the pad in response to the plurality of driving signals.
摘要翻译：片上终端电路包括：参考周期信号生成电路，其根据参考电压的电平生成基准周期信号;第一周期信号生成电路，其根据电压的电平生成第一周期信号; 周期比较电路，其将第一周期信号的周期与基准周期信号的周期进行比较，并计数多个驱动信号;以及驱动器电路，其响应于多个驱动信号而驱动该焊盘。

23. 发明申请

US20120194239A1 DELAY LOCKED LOOP 有权
标题翻译：延迟锁定环
公开(公告)号：US20120194239A1
公开(公告)日：2012-08-02
申请号：US13111568
申请日：2011-05-19
申请人： Jae-Min JANG , Yong-Ju KIM , Hae-Rang CHOI
发明人： Jae-Min JANG , Yong-Ju KIM , Hae-Rang CHOI
IPC分类号： H03L7/06
CPC分类号： H03L7/087 , G11C7/222 , H03L7/0814 , H03L7/0816
摘要： A DLL circuit includes a common delay line configured to generate a delay locked clock by selectively delaying a source clock by one or more unit delays in response to a first delay control code or a second delay control code, a clock cycle detector configured to compare a phase of the source clock with a phase of the delay locked clock in a cycle detection mode and generate the first delay control code corresponding to a delay amount of a cycle of the source clock based on a result of comparing the phases of the source and delay locked clocks, a feedback delay configured to delay the delay locked clock and output a feedback clock, and a delay amount controller configured to compare the phase of the source clock with a phase of the feedback clock in a delay locking mode and change the second delay control code based on a result of comparing the source and feedback clocks.
摘要翻译： DLL电路包括公共延迟线，其配置为通过响应于第一延迟控制代码或第二延迟控制代码选择性地将源时钟延迟一个或多个单位延迟来产生延迟锁定时钟，时钟周期检测器被配置为源时钟的相位以延迟锁定时钟的相位处于周期检测模式，并且基于比较源极和延迟的相位的结果生成与源时钟的周期的延迟量相对应的第一延迟控制代码锁定时钟，被配置为延迟延迟锁定时钟并输出反馈时钟的反馈延迟，以及延迟量控制器，被配置为将延迟锁定模式中的源时钟的相位与反馈时钟的相位进行比较，并且改变第二延迟基于比较源和反馈时钟的结果的控制代码。

24. 发明授权

US08189400B2 Data alignment circuit of semiconductor memory apparatus 有权
标题翻译：半导体存储装置的数据对准电路
公开(公告)号：US08189400B2
公开(公告)日：2012-05-29
申请号：US12647174
申请日：2009-12-24
申请人： Hyung Soo Kim , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Tae Jin Hwang , Hae Rang Choi , Ji Wang Lee , Jae Min Jang , Chang Kun Park
发明人： Hyung Soo Kim , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Tae Jin Hwang , Hae Rang Choi , Ji Wang Lee , Jae Min Jang , Chang Kun Park
IPC分类号： G11C7/00
CPC分类号： G11C7/1006 , G11C7/1012 , G11C7/1078 , G11C7/1087
摘要： A data alignment circuit of a semiconductor memory apparatus for receiving and aligning parallel data group includes a first control unit, a second control unit, a first alignment unit and a second alignment unit. The first alignment unit generates a first control signal group in response to an address group, a clock signal, and a latency signal. The second control unit generates a second control signal group in response to the address group, the clock signal, and the latency signal. The first alignment unit aligns the parallel data group as a first serial data group in response to the first control signal group. The second alignment unit aligns the parallel data group as a second serial data group in response to the second control signal group.
摘要翻译：用于接收和对准并行数据组的半导体存储装置的数据对准电路包括第一控制单元，第二控制单元，第一对准单元和第二对准单元。第一对准单元响应于地址组，时钟信号和等待时间信号产生第一控制信号组。第二控制单元响应于地址组，时钟信号和等待时间信号产生第二控制信号组。第一对准单元响应于第一控制信号组将并行数据组对准为第一串行数据组。第二对准单元响应于第二控制信号组将并行数据组对准为第二串行数据组。

25. 发明授权

US08144530B2 Semiconductor memory device and method for generating output enable signal 有权
标题翻译：半导体存储器件和产生输出使能信号的方法
公开(公告)号：US08144530B2
公开(公告)日：2012-03-27
申请号：US12494403
申请日：2009-06-30
申请人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： G11C7/00
CPC分类号： H03L7/0816 , G11C7/1066 , G11C7/222 , H03L7/0805
摘要： A semiconductor memory device is able to generate an output enable signal in response to a read command and CAS latency information. The semiconductor memory device includes a delay locked loop configured to detect a phase difference of an external clock signal and a feedback clock signal, generate a delay control signal corresponding to the detected phase difference, and generate a DLL clock signal by delaying the external clock signal for a time corresponding to the delay control signal, a delay configured to output an active signal as an output enable reset signal in response to the delay control signal and an output enable signal generator configured to be reset in response to the output enable reset signal and generate an output enable signal in response to a read signal and a CAS latency signal by counting the external clock signal and the DLL clock signal.
摘要翻译：半导体存储器件能够响应于读取命令和CAS延迟信息而产生输出使能信号。半导体存储器件包括：延迟锁定环，被配置为检测外部时钟信号和反馈时钟信号的相位差，产生对应于检测到的相位差的延迟控制信号，并通过延迟外部时钟信号产生DLL时钟信号延迟一段时间对应于延迟控制信号，延迟配置为响应于延迟控制信号而输出有效信号作为输出使能复位信号;以及输出使能信号发生器，其被配置为响应于输出使能复位信号复位;以及通过对外部时钟信号和DLL时钟信号进行计数，响应于读取信号和CAS等待时间信号产生输出使能信号。

26. 发明授权

US08143940B2 Internal supply voltage generating circuit and method for generating internal supply voltage 失效
标题翻译：内部电源电压发生电路及产生内部电源电压的方法
公开(公告)号：US08143940B2
公开(公告)日：2012-03-27
申请号：US12347605
申请日：2008-12-31
申请人： Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F1/56 , G11C5/145 , H03L7/0812 , H03L7/093
摘要： An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator; and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.
摘要翻译：内部电源电压产生电路包括：时钟比较器，被配置为将具有与参考电压电平相对应的时钟信息的第一时钟信号与具有对应于内部电源电压电平的时钟信息的第二时钟信号进行比较;控制信号发生器被配置为产生具有与所述时钟比较器的输出信号相对应的电压电平的驱动控制电压; 以及配置为响应于驱动控制电压驱动内部电源电压的端子的驱动器。

27. 发明授权

US08134876B2 Data input/output apparatus and method for semiconductor system 有权
标题翻译：半导体系统的数据输入输出装置及方法
公开(公告)号：US08134876B2
公开(公告)日：2012-03-13
申请号：US12832312
申请日：2010-07-08
申请人： Hae-Rang Choi , Yong-Ju Kim , Jae-Min Jang
发明人： Hae-Rang Choi , Yong-Ju Kim , Jae-Min Jang
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： H03L7/00
摘要： A semiconductor memory device includes: a strobe signal reception unit configured to receive a strobe signal and generate a tracking clock signal; a clock reception unit configured to receive a clock signal and generate an internal clock signal; a plurality of data reception units configured to receive parallel data in accordance with the internal clock signal and generate internal data; and a phase control unit configured to control the phase of the internal clock signal to track the tracking clock signal and to compensate for a variation in the phase of the internal clock signal while the data is received.
摘要翻译：半导体存储器件包括：选通信号接收单元，被配置为接收选通信号并产生跟踪时钟信号; 时钟接收单元，被配置为接收时钟信号并产生内部时钟信号; 多个数据接收单元，被配置为根据内部时钟信号接收并行数据并产生内部数据; 以及相位控制单元，被配置为控制内部时钟信号的相位以跟踪跟踪时钟信号，并且在接收数据时补偿内部时钟信号的相位的变化。

28. 发明申请

US20110156772A1 INTERFACE APPARATUS FOR SEMICONDUCTOR INTEGRATED CIRCUIT AND INTERFACING METHOD THEREOF 有权
标题翻译：用于半导体集成电路的接口装置及其接口方法
公开(公告)号：US20110156772A1
公开(公告)日：2011-06-30
申请号：US12650122
申请日：2009-12-30
申请人： Ji-Wang LEE , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Wang , Hae-Rang Choi , Jae-Min Jang , Chang-Kun Park
发明人： Ji-Wang LEE , Yong-Ju Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Wang , Hae-Rang Choi , Jae-Min Jang , Chang-Kun Park
IPC分类号： H03L7/06
CPC分类号： H03K19/0175 , H03K5/1565
摘要： An interface apparatus for a semiconductor integrated circuit and an interfacing method thereof controls the VOX of differential signals to a target level in response to the differential signals being outputted by an output block. The interface apparatus for a semiconductor integrated circuit includes an output block configured to output differential signals output by an internal circuit a detector configured to detect a timing error of the differential signals; and a controller configured to control a timing of the differential signals output by the internal circuit according to a detection result of the detector.
摘要翻译：半导体集成电路的接口装置及其接口方法响应于由输出块输出的差分信号，将差分信号的VOX控制到目标电平。用于半导体集成电路的接口装置包括：输出块，被配置为输出由内部电路输出的差分信号;检测器，被配置为检测差分信号的定时误差; 以及控制器，被配置为根据检测器的检测结果来控制由内部电路输出的差分信号的定时。

29. 发明授权

US07969214B2 DLL circuit, update control apparatus in DLL circuit and update method of DLL circuit 有权
标题翻译： DLL电路，DLL电路中的更新控制装置和DLL电路的更新方法
公开(公告)号：US07969214B2
公开(公告)日：2011-06-28
申请号：US12493387
申请日：2009-06-29
申请人： Jae Min Jang , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Hae Rang Choi , Ji Wang Lee , Chang Kun Park
发明人： Jae Min Jang , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Hae Rang Choi , Ji Wang Lee , Chang Kun Park
IPC分类号： H03L7/06
CPC分类号： H03L7/0814 , H03L7/085
摘要： A delay locked loop (DLL) circuit includes a phase detection unit configured to generate a phase detection signal by comparing a phase of a reference clock signal with a phase of a feedback clock signal. An update control apparatus is configured to generate a valid interval signal and an update control signal by determining a difference between the number of first logical values and the number of second logical values of the phase detection signal in response to the reference clock signal. A shift register configured to update a delay value granted to a delay line in response to the update control signal when the valid interval signal is enabled.
摘要翻译：延迟锁定环路（DLL）电路包括：相位检测单元，被配置为通过将参考时钟信号的相位与反馈时钟信号的相位进行比较来产生相位检测信号。更新控制装置被配置为通过响应于参考时钟信号确定第一逻辑值的数量和相位检测信号的第二逻辑值的数量之间的差异来产生有效间隔信号和更新控制信号。移位寄存器，被配置为当有效间隔信号被使能时响应于更新控制信号来更新授予延迟线的延迟值。

30. 发明授权

US07952364B2 Power noise detecting device and power noise control device using the same 失效
标题翻译：功率噪声检测装置和功率噪声控制装置使用相同
公开(公告)号：US07952364B2
公开(公告)日：2011-05-31
申请号：US12332294
申请日：2008-12-10
申请人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： G01R29/26
CPC分类号： H03H1/0007 , H03K19/00346
摘要： A power noise detecting device includes a plurality of power lines, and a power noise detecting part configured to detect power noise by rectifying voltages of the plurality of power lines and converting the rectified voltages into effective voltages.
摘要翻译：电力噪声检测装置包括多个电力线，以及电力噪声检测部，被配置为通过整流多个电力线的电压并将整流电压转换为有效电压来检测电力噪声。

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