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21. 发明申请

US20170175295A1 METHOD FOR PRODUCING GROUP III NITRIDE WAFERS AND GROUP III NITRIDE WAFERS 审中-公开
公开(公告)号：US20170175295A1
公开(公告)日：2017-06-22
申请号：US15452700
申请日：2017-03-07
申请人： SIXPOINT MATERIALS, INC.
发明人： Tadao Hashimoto , Edward Letts , Masanori Ikari
IPC分类号： C30B33/02 , C30B7/10 , C30B29/40
CPC分类号： C30B33/02 , C30B7/10 , C30B7/105 , C30B29/403 , C30B29/406
摘要： The present invention discloses a method of removing contaminant from group III nitride single-crystal wafers. The method involves annealing a wafer to concentrate a contaminant in a region of the crystal near the surface of the crystal and removing some of the crystal near the surface that contains at least a portion of the region containing concentrated contaminant. The resultant thinner wafer therefore has less contaminant in it.

22. 发明授权

US09685327B2 Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it 有权
公开(公告)号：US09685327B2
公开(公告)日：2017-06-20
申请号：US14460065
申请日：2014-08-14
申请人： SIXPOINT MATERIALS, INC. , Seoul Semiconductor Co., Ltd.
发明人： Tadao Hashimoto
IPC分类号： H01L21/02 , H01L29/20 , H01L29/207 , H01L29/78 , H01L29/812 , C23C16/30 , H01L29/861 , H01L29/872 , H01L29/205 , H01L29/32 , H01L29/66 , H01L29/778 , H01L29/201 , H01L29/417 , H01L29/06
CPC分类号： H01L21/0254 , C23C16/303 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02584 , H01L21/0262 , H01L21/02623 , H01L21/02694 , H01L29/0646 , H01L29/0653 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/32 , H01L29/41766 , H01L29/66462 , H01L29/7784 , H01L29/7828 , H01L29/8122 , H01L29/8611 , H01L29/872
摘要： The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm−2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0≦x≦1, 0≦y≦1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.

23. 发明授权

US09518340B2 Method of growing group III nitride crystals 有权
公开(公告)号：US09518340B2
公开(公告)日：2016-12-13
申请号：US13833443
申请日：2013-03-15
申请人： SixPoint Materials, Inc. , Seoul Semiconductor Co., Ltd.
发明人： Tadao Hashimoto , Edward Letts , Sierra Hoff
IPC分类号： H01L21/02 , C30B29/40 , H01L29/20 , C30B7/10 , B28D5/04 , C30B29/64 , C30B25/20 , H01L29/04 , H01L29/32
CPC分类号： C30B29/406 , B28D5/045 , C30B7/10 , C30B7/105 , C30B25/20 , C30B29/403 , C30B29/64 , H01L21/02389 , H01L21/0254 , H01L21/02628 , H01L29/045 , H01L29/2003 , H01L29/32 , Y10S117/902 , Y10T428/192
摘要： The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

24. 发明授权

US09441311B2 Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride 有权
标题翻译：使用氨和氯化氢的氮化镓晶体生长反应器
公开(公告)号：US09441311B2
公开(公告)日：2016-09-13
申请号：US14285350
申请日：2014-05-22
申请人： SIXPOINT MATERIALS, INC.
发明人： Tadao Hashimoto , Edward Letts
IPC分类号： C30B25/08 , C30B25/10 , C30B25/14 , C23C16/44 , C30B29/40
CPC分类号： C30B25/08 , C23C16/4412 , C30B25/10 , C30B25/14 , C30B29/403 , C30B29/406
摘要： The present invention in one preferred embodiment discloses a new design of HVPE reactor, which can grow gallium nitride for more than one day without interruption. To avoid clogging in the exhaust system, a second reactor chamber is added after a main reactor where GaN is produced. The second reactor chamber may be configured to enhance ammonium chloride formation, and the powder may be collected efficiently in it. To avoid ammonium chloride formation in the main reactor, the connection between the main reactor and the second reaction chamber can be maintained at elevated temperature. In addition, the second reactor chamber may have two or more exhaust lines. If one exhaust line becomes clogged with powder, the valve for an alternative exhaust line may open and the valve for the clogged line may be closed to avoid overpressuring the system. The quartz-made main reactor may have e.g. a pyrolytic boron nitride liner to collect polycrystalline gallium nitride efficiently. The new HVPE reactor which can grow gallium nitride crystals for more than 1 day may produce enough source material for ammonothermal growth. Single crystalline gallium nitride and polycrystalline gallium nitride from the HVPE reactor may be used as seed crystals and a nutrient for ammonothermal group III-nitride growth.
摘要翻译：在一个优选实施方案中，本发明公开了HVPE反应器的新设计，其可以不间断地生长氮化镓一天以上。为了避免在排气系统中堵塞，在生产GaN的主反应器之后加入第二反应器室。第二反应器室可以被配置成增强氯化铵的形成，并且可以有效地将粉末收集在其中。为了避免在主反应器中形成氯化铵，可以将主反应器和第二反应室之间的连接保持在升高的温度。此外，第二反应器室可以具有两个或更多个排气管线。如果一个排气管道被粉末堵塞，则替代排气管路的阀门可能会打开，堵塞管路的阀门可能会被关闭，以避免系统过压。石英制的主反应器可以具有例如一种热解氮化硼衬垫，有效收集多晶氮化镓。可以生长氮化镓晶体超过1天的新的HVPE反应器可以产生足够的用于氨热生长的源材料。来自HVPE反应器的单晶氮化镓和多晶氮化镓可以用作晶种和用于氨热III族氮化物生长的营养物质。

25. 发明申请

US20160153120A1 GROUP III NITRIDE CRYSTALS, THEIR FABRICATION METHOD, AND METHOD OF FABRICATING BULK GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA 有权
公开(公告)号：US20160153120A1
公开(公告)日：2016-06-02
申请号：US14957536
申请日：2015-12-02
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： C30B29/40 , C30B25/02 , C30B7/10 , H01L29/20 , C01B21/06
CPC分类号： C30B7/105 , C01B21/0632 , C01P2002/76 , C01P2004/60 , C30B25/02 , C30B25/16 , C30B29/406 , C30B29/68 , H01L29/2003 , Y02P20/544
摘要： In one instance, the invention provides a group III nitride crystal having a first side exposing nitrogen polar c-plane of single crystalline or highly oriented polycrystalline group III nitride and a second side exposing group III polar surface, polycrystalline phase, or amorphous phase of group III nitride. Such structure is useful as a seed crystal for ammonothermal growth of bulk group III nitride crystals. The invention also discloses the method of fabricating such crystal. The invention also discloses the method of fabricating a bulk crystal of group III nitride by ammonothermal method using such crystal.

26. 发明申请

US20160153115A1 GROUP III NITRIDE CRYSTALS, THEIR FABRICATION METHOD, AND METHOD OF FABRICATING BULK GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA 有权
标题翻译：第III类氮化物晶体，它们的制造方法和制备超临界氨基酸中的第III组氮化物晶体的方法
公开(公告)号：US20160153115A1
公开(公告)日：2016-06-02
申请号：US14957549
申请日：2015-12-02
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： C30B7/10 , C30B29/40 , C30B25/02
CPC分类号： C30B7/105 , C01B21/0632 , C01P2002/76 , C01P2004/60 , C30B25/02 , C30B25/16 , C30B29/406 , C30B29/68 , H01L29/2003 , Y02P20/544
摘要： In one instance, the invention provides a group III nitride crystal having a first side exposing nitrogen polar c-plane of single crystalline or highly oriented polycrystalline group III nitride and a second side exposing group III polar surface, polycrystalline phase, or amorphous phase of group III nitride. Such structure is useful as a seed crystal for ammonothermal growth of bulk group III nitride crystals. The invention also discloses the method of fabricating such crystal. The invention also discloses the method of fabricating a bulk crystal of group III nitride by ammonothermal method using such crystal.
摘要翻译：在一个实例中，本发明提供了一种III族氮化物晶体，其具有第一面暴露单晶或高取向多晶III族氮化物的氮极C面和第二侧暴露III族极性表面，多晶相或非晶相的组 III族氮化物。这种结构可用作本体III族氮化物晶体的氨热生长的晶种。本发明还公开了制造这种晶体的方法。本发明还公开了通过使用这种晶体的氨热法制造III族氮化物的块状晶体的方法。

27. 发明授权

US09255342B2 Bismuth-doped semi-insulating group III nitride wafer and its production method 有权
标题翻译：铋掺杂半绝缘III族氮化物晶片及其制备方法
公开(公告)号：US09255342B2
公开(公告)日：2016-02-09
申请号：US13781543
申请日：2013-02-28
申请人： SIXPOINT MATERIALS, INC. , Seoul Semiconductor Co., Ltd.
发明人： Tadao Hashimoto , Edward Letts , Sierra Hoff
IPC分类号： C30B7/10 , B28D5/00 , H01L21/02 , H01L29/20 , H01L29/22 , C30B9/00 , C30B28/04 , C30B29/40
CPC分类号： C30B7/105 , B24B37/042 , B28D5/00 , C30B9/00 , C30B28/04 , C30B29/403 , H01L21/02013 , H01L21/02389 , H01L29/2003 , H01L29/207 , H01L29/22
摘要： The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.
摘要翻译：本发明公开了掺杂有铋（Bi）的GaxAlyIn1-x-yN（0＆nlE; x＆nlE; 1,0＆amp; nlE; x + y＆nlE; 1）的半绝缘晶片。半绝缘晶片的电阻率为104ohm-cm以上。尽管获得III族氮化物的单晶锭是非常困难的，但是该方法可以生长具有位错密度/晶界小于105cm -2的III族氮化物的高取向聚晶或单晶锭。本发明还公开了制造半绝缘III族氮化物块状晶体和晶片的方法。

28. 发明申请

US20140084297A1 GROUP III NITRIDE WAFERS AND FABRICATION METHOD AND TESTING METHOD 审中-公开
标题翻译：第三组氮化物膜和制造方法和测试方法
公开(公告)号：US20140084297A1
公开(公告)日：2014-03-27
申请号：US13798530
申请日：2013-03-13
申请人： Seoul Semiconductor Co., Ltd. , SixPoint Materials, Inc.
发明人： Tadao Hashimoto
IPC分类号： H01L21/66 , H01L29/20 , H01L21/78
CPC分类号： G01N23/207 , B24B37/044 , C01B21/0632 , C01P2002/74 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/06 , H01L21/0201 , H01L21/30625 , H01L21/78 , H01L22/12 , H01L29/045 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： The invention provides, in one instance, a group III nitride wafer sliced from a group III nitride ingot, polished to remove the surface damage layer and tested with x-ray diffraction. The x-ray incident beam is irradiated at an angle less than 15 degree and diffraction peak intensity is evaluated. The group III nitride wafer passing this test has sufficient surface quality for device fabrication. The invention also provides, in one instance, a method of producing group III nitride wafer by slicing a group III nitride ingot, polishing at least one surface of the wafer, and testing the surface quality with x-ray diffraction having an incident beam angle less than 15 degree to the surface. The invention also provides, in an instance, a test method for testing the surface quality of group III nitride wafers using x-ray diffraction having an incident beam angle less than 15 degree to the surface.
摘要翻译：本发明在一个实例中提供了从III族氮化物锭切片的III族氮化物晶片，其被抛光以去除表面损伤层并且用x射线衍射测试。以小于15度的角度照射x射线入射光束，评价衍射峰强度。通过该测试的III族氮化物晶片具有用于器件制造的足够的表面质量。本发明在一个实例中还提供了通过切割III族氮化物锭来抛光晶片的至少一个表面并且用具有入射光束角度较小的x射线衍射测试表面质量来制造III族氮化物晶片的方法比表面15度以上。本发明还提供了一种用于使用具有小于表面15度的入射光束角的x射线衍射来测试III族氮化物晶片的表面质量的测试方法。

29. 发明申请

US20140065796A1 GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD 有权
公开(公告)号：US20140065796A1
公开(公告)日：2014-03-06
申请号：US13835636
申请日：2013-03-15
申请人： Seoul Semiconductor Co., Ltd. , SixPoint Materials, Inc.
发明人： Tadao Hashimoto , Edward Letts , Sierra Hoff
IPC分类号： H01L29/20
CPC分类号： H01L29/201 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , H01L21/02013 , H01L21/02019 , H01L29/2003
摘要： The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

30. 发明申请

US20130206057A1 HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL 审中-公开
公开(公告)号：US20130206057A1
公开(公告)日：2013-08-15
申请号：US13784210
申请日：2013-03-04
申请人： SIXPOINT MATERIALS, INC.
发明人： Tadao HASHIMOTO , Edward LETTS , Masanori IKARI
IPC分类号： C30B7/10
CPC分类号： C30B7/105 , B32B15/01 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T428/12028
摘要： Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.

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