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21. 发明申请

US20060261824A1 Semiconductor device test method and semiconductor device tester 失效
公开(公告)号：US20060261824A1
公开(公告)日：2006-11-23
申请号：US11437375
申请日：2006-05-19
申请人： Keizo Yamada
发明人： Keizo Yamada
IPC分类号： G01R31/305
CPC分类号： G01R31/307 , G01R31/2853
摘要： A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current waveforms and comparing the current waveforms.

22. 发明授权

US07081625B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07081625B2
公开(公告)日：2006-07-25
申请号：US10700525
申请日：2003-11-05
申请人： Masanari Furiki , Kouichi Kurosawa , Takehiko Konno , Ryuichi Funatsu
发明人： Masanari Furiki , Kouichi Kurosawa , Takehiko Konno , Ryuichi Funatsu
IPC分类号： G01N23/00 , G21K7/00 , G01R31/305 , G01R31/25
CPC分类号： H01J37/261 , G01N23/225 , H01J37/28 , H01J2237/2817
摘要： The object of the present invention is to transmit the position information of a defect that has been specified by means of a circuit pattern inspection apparatus quickly and precisely so that the position information is efficiently used in another apparatus. Marking is carried out on the peripheral area of the defect by use of a charged particle beam irradiation mechanism of the inspection apparatus. The marking realizes sharing of the defect position information with another apparatus. The marking technique includes deposition of a deposit and charging up by means of irradiation of a charged particle beam. The marking in the inspection apparatus allows the defect position information to be transmitted to another apparatus more correctly and easily, and as a result, analysis accuracy is improved and analysis time is shortened.
摘要翻译：本发明的目的是通过电路图形检查装置快速且精确地发送已经指定的缺陷的位置信息，使得位置信息在另一装置中被有效地使用。通过使用检查装置的带电粒子束照射机构在缺陷的周边区域进行标记。该标记实现与另一装置共享缺陷位置信息。标记技术包括通过照射带电粒子束沉积沉积物并充电。检查装置中的标记允许将缺陷位置信息更正确且容易地传送到另一装置，结果提高了分析精度，缩短了分析时间。

23. 发明申请

US20060076965A1 Contact-free test system for semiconductor device 审中-公开
标题翻译：无接触式半导体器件测试系统
公开(公告)号：US20060076965A1
公开(公告)日：2006-04-13
申请号：US11147437
申请日：2005-06-08
申请人： Young-Soo An , Hun-Kyo Seo , Hyun-Seop Shim , Jeong-Seon Kim , Ki-Don Hong , Tcherniak Valeri
发明人： Young-Soo An , Hun-Kyo Seo , Hyun-Seop Shim , Jeong-Seon Kim , Ki-Don Hong , Tcherniak Valeri
IPC分类号： G01R31/305
CPC分类号： G01R31/307
摘要： The present invention provides a contact-free test system for testing a semiconductor device. The contact-free test system comprises a test signal member applying a test signal to the semiconductor device, an electronic beam radiator generating a first electronic beam and radiating it to an area of the semiconductor device, a detector to detect a second electronic beam reflected from the semiconductor device, and a comparator to compare the test signal with the second electronic beam.
摘要翻译：本发明提供了一种用于测试半导体器件的无接触测试系统。无接触测试系统包括向半导体器件施加测试信号的测试信号部件，产生第一电子束并将其辐射到半导体器件的区域的电子束辐射器，检测器，用于检测从半导体器件反射的第二电子束半导体器件和比较器，用于将测试信号与第二电子束进行比较。

24. 发明申请

US20060028217A1 System of detection and repair and method thereof 审中-公开
标题翻译：检测和修复系统及其方法
公开(公告)号：US20060028217A1
公开(公告)日：2006-02-09
申请号：US11180712
申请日：2005-07-14
申请人： Meng-Chieh Liao , Chi-Chung Chen
发明人： Meng-Chieh Liao , Chi-Chung Chen
IPC分类号： G01R31/305 , H01J9/50
CPC分类号： G09G3/006 , G09G3/3208 , H01L2251/568
摘要： A system of detection and repair is to detect and repair an organic electroluminescent apparatus. When detecting locations of defects, the system charges a bias to the detected locations of the organic electroluminescent apparatus. A detector, such as an infrared (IR) detector, of the system detects the locations of defects having abnormal current distribution. A beam generator of the system is then used to generate a beam for isolating the defects. A method of detection and repair is further provided.
摘要翻译：检测和修复系统是检测和修复有机电致发光装置。当检测到缺陷的位置时，系统向有机电致发光装置的检测位置充电偏压。该系统的检测器，例如红外（IR）检测器）检测具有异常电流分布的缺陷的位置。然后使用该系统的光束发生器来产生用于隔离缺陷的光束。还提供了检测和修复的方法。

25. 发明授权

US06987400B2 Testing flat panel display plates using high frequency AC signals 失效
标题翻译：使用高频交流信号测试平板显示板
公开(公告)号：US06987400B2
公开(公告)日：2006-01-17
申请号：US10442556
申请日：2003-05-20
申请人： Guillermo L. Toro-Lira
发明人： Guillermo L. Toro-Lira
IPC分类号： G01R31/305
CPC分类号： G09G3/006
摘要： Methods of and apparatus for detecting pixel element defects in flat panel display (FPDs). Floating pixel elements (FPes) of uncompleted active plates in a manufacturing process are activated with high frequency AC test signals having frequencies higher than frequencies encountered by pixels of completely manufactured FPDs during normal display operation. Application of such high frequency test signals allows detection of pixel defects of pixel elements that exhibit an electrical open circuit at normal display operation frequencies. Because the methods and apparatus allow testing prior to FPD plates being completely manufactured and prior to FPD final assembly, pixel defects can be detected early in the display manufacturing process, thereby resulting in a substantial reduction in production costs.
摘要翻译：用于检测平板显示器（FPD）中的像素元件缺陷的方法和装置。在正常显示操作期间，制造过程中未完成的有源板的浮动像素元件（FP）由具有高于完全制造的FPD的像素频率的高频AC测试信号激活。这种高频测试信号的应用允许检测在正常显示操作频率下呈现电开路的像素元件的像素缺陷。由于方法和装置允许在FPD板完全制造之前并且在FPD最终组装之前进行测试，因此可以在显示器制造过程的早期检测到像素缺陷，从而导致生产成本的显着降低。

26. 发明授权

US06980011B1 Method and apparatus for detecting electrical failures on a die through maximizing passive voltage contrast on its surface 失效
标题翻译：用于通过最大化其表面上的被动电压对比来检测管芯上的电气故障的方法和装置
公开(公告)号：US06980011B1
公开(公告)日：2005-12-27
申请号：US10757694
申请日：2004-01-13
申请人： Vijay Chowdhury , James Hahn
发明人： Vijay Chowdhury , James Hahn
IPC分类号： G01R31/302 , G01R31/305 , G01R31/307
CPC分类号： G01R31/307
摘要： A method and apparatus for maximizing passive voltage contrast on the surface of a die and then using the maximized passive voltage contrast to identify electrical failures in the die. The method employs a primary electron beam to scan the surface of the die. In response, secondary electrons are emitted from the die and then captured by a secondary electron detector. The density of secondary electrons is further modulated by a passive voltage near the die surface. To enhance the passive voltage contrast on the die surface, the incident angle of the primary electron beam is adjusted with respect to the die, the passive voltage contrast reaching a maximum at an incident angle of about 75° or above. With such enhanced contrast, an image depicting the magnitude of the secondary electron current can be used to detect electrical failures in the die.
摘要翻译：一种用于最大化管芯表面上的被动电压对比度，然后使用最大化无源电压对比度来识别管芯中的电气故障的方法和装置。该方法采用一次电子束扫描模具的表面。作为响应，二次电子从管芯发射，然后被二次电子检测器捕获。二次电子的密度由芯片表面附近的被动电压进一步调制。为了增强芯片表面上的被动电压对比度，相对于裸片调整一次电子束的入射角，无源电压对比度在约75°或更高的入射角处达到最大值。通过这种增强的对比度，可以使用描绘二次电子电流的大小的图像来检测模具中的电气故障。

27. 发明授权

US06970004B2 Apparatus for inspecting defects of devices and method of inspecting defects 有权
标题翻译：用于检查装置缺陷的装置和检查缺陷的方法
公开(公告)号：US06970004B2
公开(公告)日：2005-11-29
申请号：US10803932
申请日：2004-03-19
申请人： Tohru Ishitani , Hidemi Koike , Aritoshi Sugimoto , Isamu Sekihara , Kaoru Umemura , Satoshi Tomimatsu , Junzo Azuma
发明人： Tohru Ishitani , Hidemi Koike , Aritoshi Sugimoto , Isamu Sekihara , Kaoru Umemura , Satoshi Tomimatsu , Junzo Azuma
IPC分类号： G01R31/265 , G01R31/28 , G01R31/302 , G01R31/303 , G01R31/305 , G01R31/307 , G01R31/311 , H01J37/20 , H01J37/28 , G01R31/00 , G01R31/26 , H01L27/00
CPC分类号： G01R31/311 , G01R31/2851 , G01R31/303
摘要： Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).
摘要翻译：可以在大芯片（20〜25mm的正方形）内大量排列的TEG（每个为1〜2.5mm的方形）内的亚微米尺寸的布线图案中的断路缺陷，短路缺陷等相对于所有的TEG，具有良好的可操作性，高可靠性和高效率。用于通过机械接触对布线图案施加电压的导体探针由与样品台（16）的移动同步的同步型导体探针和相对固定于FIB发生器的固定型导体探针装置（21）组成， 10）。探针尖端的位置叠加到SIM图像上并显示在显示单元上（19）。

28. 发明申请

US20050237069A1 Semiconductor device test method and semiconductor device tester 失效
标题翻译：半导体器件测试方法和半导体器件测试仪
公开(公告)号：US20050237069A1
公开(公告)日：2005-10-27
申请号：US11150967
申请日：2005-06-13
申请人： Keizo Yamada
发明人： Keizo Yamada
IPC分类号： G01B15/00 , G01N23/225 , G01N27/00 , G01R1/06 , G01R31/02 , G01R31/302 , G01R31/305 , G01R31/307 , G01R31/311 , H01J37/28 , H01L21/66
CPC分类号： G01R31/307 , G01R31/2853
摘要： A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current waveforms and comparing the current waveforms.
摘要翻译：通过在扫描测试样品的同时照射测试样品和另一个测试样品，检测待测试样品的缺陷位置，将测试样品中产生的电流值对应于电子束照射位置存储为当前波形，并比较电流波形。

29. 发明授权

US06952105B2 Inspection method and apparatus for circuit pattern of resist material 失效
标题翻译：抗蚀材料电路图案检测方法及装置
公开(公告)号：US06952105B2
公开(公告)日：2005-10-04
申请号：US10620702
申请日：2003-07-17
申请人： Zhaohui Cheng , Mari Nozoe
发明人： Zhaohui Cheng , Mari Nozoe
IPC分类号： H01L21/66 , G01N23/00 , G01R31/302 , G01R31/305 , G06T1/00 , H01J37/04 , H01J37/147 , H01J37/28
CPC分类号： H01J37/28 , H01J2237/2817
摘要： A pattern inspecting technique, depending on the kind of materials, can reduce damage including shrinkage to materials when the materials are prone to such damage as shrinkage and spoilage caused by electron beam irradiation. This is accomplished by scanning a sample with a primary electron beam, detecting secondary electrons generated, or electrons reflected from the semiconductor device, or both the former and latter electrons, and converting the electrons into signals, and transforming the signals into an image, displaying the image, and detecting defective spots in the circuit pattern of the sample. The irradiation density (dose per unit area) of the electron beam is monitored and limited depending on the kind of material of the circuit pattern under inspection and the inspecting conditions, and damage, such as shrinkage and spoilage to the materials during electron beam irradiation, is reduced to an allowable range.
摘要翻译：取决于材料种类的图案检查技术可以减少材料收缩时的损伤，当材料容易受到由电子束照射引起的收缩和变质等损害时。这是通过用一次电子束扫描样品，检测产生的二次电子或从半导体器件反射的电子，或者前者和后面的电子，并将电子转换为信号，并将信号变换为图像，显示图像，并检测样品的电路图案中的缺陷点。电子束的照射密度（每单位面积的剂量）根据检查中的电路图案的材料的种类和检查条件进行监测和限制，并且在电子束照射期间对材料的收缩和变质等损害，减少到允许范围。

30. 发明申请

US20050200841A1 Detection of defects in patterned substrates 失效
公开(公告)号：US20050200841A1
公开(公告)日：2005-09-15
申请号：US11069491
申请日：2005-02-28
申请人： Christopher Talbot , Chiwoei Lo
发明人： Christopher Talbot , Chiwoei Lo
IPC分类号： G01R31/302 , G01B15/00 , G01N21/00 , G01N23/00 , G01N23/04 , G01N23/225 , G01Q30/04 , G01Q40/02 , G01R1/06 , G01R31/265 , G01R31/305 , H01J37/073 , H01J37/20 , H01J37/22 , H01J37/256 , H01J37/28 , H01L21/66
CPC分类号： H01J37/265 , G06T7/0004 , H01J37/28 , H01J2237/202 , H01J2237/221 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817
摘要： One embodiment of the present invention is a method of detecting defects in a patterned substrate, including: (a) positioning a charged-particle-beam optical column relative to a patterned substrate, the charged-particle-beam optical column having a field of view (FOV) with a substantially uniform resolution over the FOV; (b) operating the charged-particle-beam optical column to acquire images of a region of the patterned substrate lying within the FOV by scanning the charged-particle beam over the patterned substrate; and (c) comparing the acquired images to a reference to identify defects in the patterned substrate.

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