会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • SCANNING CHARGED PARTICLE MICROSCOPE
    • 扫描充电颗粒显微镜
    • US20110254944A1
    • 2011-10-20
    • US13122532
    • 2009-10-02
    • Tohru IshitaniIsao Nagaoki
    • Tohru IshitaniIsao Nagaoki
    • H04N7/18G06K9/36
    • H01J37/28H01J37/09H01J37/222H01J2237/0216H01J2237/223H01J2237/2817
    • When a scanning image of a scanning charged particle microscope is impaired by an external disturbance, a disturbance frequency can be simply and precisely analyzed from the image in order to specify the external disturbance. The maximum frequency analyzable by the scanning charged particle microscope can also be increased up to several kHz, which is the rotation frequency of, for example, a turbo-molecular pump commonly used as an exhaust pump of the scanning charged particle microscope. In an FFT analysis of a stripe pattern which is an impairment of the scanning image, the scanning charged particle microscope performs a one-dimensional FFT (1D-FFT) in the Y-direction (sub-deflection direction of the charged particle beam) or a one-dimensional DFT (1D-DFT) in the X-direction (main deflection direction of the charged particle beam). To extend the analyzable maximum frequency up to several kHz, the scanning charged particle microscope also performs the 1D-FFT (or 1D-DFT) analysis in the X-direction (main deflection direction of the charged particle beam) along which the charged particle beam has a fast scanning speed.
    • 当扫描带电粒子显微镜的扫描图像被外部干扰削弱时,可以从图像中简单且精确地分析干扰频率,以便指定外部干扰。 通过扫描带电粒子显微镜可分析的最大频率也可以增加到几kHz,这是例如通常用作扫描带电粒子显微镜的排气泵的涡轮分子泵的旋转频率。 扫描带电粒子显微镜在对扫描图像的损伤的条纹图案进行FFT分析时,在Y方向(带电粒子束的副偏转方向)上进行一维FFT(1D-FFT)或 在X方向(带电粒子束的主偏转方向)上的一维DFT(1D-DFT)。 为了将可分析的最大频率扩展到几kHz,扫描带电粒子显微镜还可以在带电粒子束的X方向(带电粒子束的主偏转方向)上进行1D-FFT(或1D-DFT)分析 扫描速度快。
    • 4. 发明授权
    • Liquid metal ion gun
    • 液态金属离子枪
    • US07804073B2
    • 2010-09-28
    • US12076481
    • 2008-03-19
    • Hiroyasu KagaYuichi MadokoroShigeru IzawaTohru IshitaniKaoru Umemura
    • Hiroyasu KagaYuichi MadokoroShigeru IzawaTohru IshitaniKaoru Umemura
    • H01J49/10H01J27/02
    • H01J27/02H01J27/22H01J37/08H01J2237/0805
    • An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
    • Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素(W和Ga),如果反溅射的颗粒附着到Ga液态金属离子源,则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制(GUN)光圈来放置大约的Ga。 在束发射区域(Ga储存)中包含的部分的表面上25mg(熔点为30℃))。 当将离子发射到光束限制(GUN)孔径时,发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。