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31. 发明授权

US09385199B2 Normally-off gallium nitride-based semiconductor devices 有权
标题翻译：通常的氮化镓基半导体器件
公开(公告)号：US09385199B2
公开(公告)日：2016-07-05
申请号：US14319490
申请日：2014-06-30
申请人： National Semiconductor Corporation
发明人： Jamal Ramdani
IPC分类号： H01L31/0336 , H01L29/225 , H01L29/66 , H01L29/778 , H01L29/20
CPC分类号： H01L29/225 , H01L29/2003 , H01L29/66462 , H01L29/7786
摘要： A method includes forming a relaxed layer in a semiconductor device. The method also includes forming a tensile layer over the relaxed layer, where the tensile layer has tensile stress. The method further includes forming a compressive layer over the relaxed layer, where the compressive layer has compressive stress. The compressive layer has a piezoelectric polarization that is approximately equal to or greater than a spontaneous polarization in the relaxed, tensile, and compressive layers. The piezoelectric polarization in the compressive layer could be in an opposite direction than the spontaneous polarization in the compressive layer. The relaxed layer could include gallium nitride, the tensile layer could include aluminum gallium nitride, and the compressive layer could include aluminum indium gallium nitride.
摘要翻译：一种方法包括在半导体器件中形成松弛层。该方法还包括在松弛层上形成拉伸层，其中拉伸层具有拉伸应力。该方法还包括在松弛层上形成压缩层，其中压缩层具有压应力。压缩层具有大致等于或大于松弛，拉伸和压缩层中的自发极化的压电极化。压缩层中的压电极化可能与压缩层中的自发极化方向相反。松弛层可以包括氮化镓，拉伸层可以包括氮化镓铝，并且压缩层可以包括铝铟镓氮。

32. 发明授权

US09379271B2 Variable range photodetector and method thereof 有权
标题翻译：可变范围光电检测器及其方法
公开(公告)号：US09379271B2
公开(公告)日：2016-06-28
申请号：US14285964
申请日：2014-05-23
申请人： U.S. Army Research Laboratory
发明人： Paul Shen , Lee Ellen Rodak , Chad Stephen Gallinat , Anand Venktesh Sampath , Michael Wraback
IPC分类号： H01L31/107 , H01L31/0224 , H01L31/0296 , H01L31/0304 , H01L31/0336 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/1075 , H01L31/022408 , H01L31/0296 , H01L31/03044 , H01L31/03046 , H01L31/0336 , H01L31/03529 , H01L31/18 , Y02E10/544 , Y02P70/521
摘要： A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface therebetween, the magnitudes and directions of the first and second polarizations being such that a scalar projection of second polarization on the growth direction relative to the scalar projection of the first polarization projected onto the growth direction is sufficient to create a first interface charge; and a third region suitable for forming one of an n-metal or p-metal contact thereon having a third polarization, a second interface between the second and third regions, the third polarization having a scalar projection on the growth direction that, relative to scalar projection of the second polarization onto the growth direction, is sufficient to create a second interface charge; the first and second interface charges creating an electrostatic potential barrier to carriers defining a predetermined wavelength range.
摘要翻译：一种制造方法和一种包括基底的光电探测器; p型或n型层; 每个具有偏振的第一和第二区域，其间的第一界面，所述第一和第二偏振的幅度和方向使得相对于投射到生长方向上的第一偏振的标量投影的生长方向上的第二偏振的标量投影足以创建第一接口电荷; 以及第三区域，适于形成其上具有第三偏振的第一极化的第一极化，第二和第三区之间的第二界面之间的n金属或p金属接触之一，所述第三极化在生长方向上具有标量投影，相对于标量将第二偏振投影到生长方向上足以产生第二界面电荷; 所述第一和第二界面电荷为限定预定波长范围的载流子产生静电势垒。

33. 发明授权

US09356167B2 Semiconductor ultraviolet (UV) photo-detecting device 有权
标题翻译：半导体紫外（UV）光电检测装置
公开(公告)号：US09356167B2
公开(公告)日：2016-05-31
申请号：US14584732
申请日：2014-12-29
申请人： Seoul Viosys Co., Ltd.
发明人： Ki Yon Park , Hwa Mok Kim , Kyu Ho Lee , Sung Hyun Lee , Hyung Kyu Kim
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/0304 , H01L31/11 , H01L31/108 , H01L31/18
CPC分类号： H01L31/03048 , H01L31/022408 , H01L31/03044 , H01L31/108 , H01L31/11 , H01L31/1848 , H01L31/1852 , H01L31/1856 , Y02E10/544
摘要： An ultraviolet (UV) photo-detecting device, including: a first nitride layer; a secondary light absorption layer disposed on the first nitride layer; a primary light absorption layer disposed on the secondary light absorption layer; and a Schottky junction layer disposed on the primary light absorption layer. The secondary light absorption layer includes a nitride layer having lower band-gap energy than the primary light absorption layer.
摘要翻译：一种紫外线（UV）光检测装置，包括：第一氮化物层; 设置在所述第一氮化物层上的次级光吸收层; 设置在次光吸收层上的初级光吸收层; 以及设置在初级光吸收层上的肖特基结层。二次光吸收层包括具有比初级光吸收层低的带隙能量的氮化物层。

34. 发明授权

US09343551B2 Methods for manufacturing a fin structure of semiconductor device 有权
标题翻译：制造半导体器件的翅片结构的方法
公开(公告)号：US09343551B2
公开(公告)日：2016-05-17
申请号：US14665869
申请日：2015-03-23
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuo-Cheng Ching , Chih-Hao Wang , Zhiqiang Wu , Carlos H. Diaz , Jean-Pierre Colinge
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L29/66 , H01L29/78 , H01L27/12 , H01L29/06 , H01L21/02 , H01L21/3065 , H01L21/308 , H01L21/762 , H01L29/165
CPC分类号： H01L29/7848 , H01L21/02107 , H01L21/02123 , H01L21/02175 , H01L21/02233 , H01L21/02274 , H01L21/02282 , H01L21/0262 , H01L21/28238 , H01L21/3065 , H01L21/308 , H01L21/76224 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L21/845 , H01L27/0886 , H01L27/1211 , H01L29/0649 , H01L29/0653 , H01L29/0847 , H01L29/165 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/7843 , H01L29/7846 , H01L29/785 , H01L29/7851 , H01L29/7856
摘要： Semiconductor devices and methods of manufacturing the same are disclosed. In some embodiments, a method of manufacturing a semiconductor device comprises forming a fin structure over a substrate. The fin structure may comprise a lower portion protruding from a major surface of the substrate, an upper portion, and a middle portion between the lower portion and the upper portion, wherein the lower portion and the middle portion differ in composition. The method may further include forming an isolation structure surrounding the fin structure and oxidizing the fin structure. The oxidizing may form a pair of notches extending from sidewalls of the fin structure into the middle portion of the fin structure.
摘要翻译：公开了半导体器件及其制造方法。在一些实施例中，制造半导体器件的方法包括在衬底上形成翅片结构。翅片结构可以包括从基底的主表面突出的下部，上部和下部与上部之间的中间部分，其中下部和中间部分的组成不同。该方法还可以包括形成围绕翅片结构并氧化翅片结构的隔离结构。氧化可以形成从翅片结构的侧壁延伸到翅片结构的中间部分的一对凹口。

35. 发明授权

US09324908B2 Nitride semiconductor light-emitting element 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：US09324908B2
公开(公告)日：2016-04-26
申请号：US14653703
申请日：2014-03-28
申请人： Sharp Kabushiki Kaisha
发明人： Masanori Watanabe , Satoshi Komada , Tomoya Inoue , Kosuke Kawabata
IPC分类号： H01L31/0328 , H01L27/15 , H01L31/0336 , H01L21/00 , H01L33/06 , H01L33/00 , H01L33/32 , H01L33/02 , H01L33/20 , H01L33/12
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/025 , H01L33/12 , H01L33/20 , H01L33/32
摘要： Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.
摘要翻译：本发明提供一种氮化物半导体发光元件，其依次包括第一n型氮化物半导体层，第二n型氮化物半导体层，n型电子注入层，发光层和p型氮化物半导体层，其中第二n型氮化物半导体层的平均n型掺杂剂浓度为第一n型氮化物半导体层的平均n型掺杂剂浓度的0.53倍以下，平均n n型电子注入层的掺杂浓度为第二n型氮化物半导体层的平均n型掺杂剂浓度的1.5倍以上。

36. 发明申请

US20160099375A1 SOLAR CELL HAVING DOPED BUFFER LAYER AND METHOD OF FABRICATING THE SOLAR CELL 有权
标题翻译：具有掺杂缓冲层的太阳能电池和制造太阳能电池的方法
公开(公告)号：US20160099375A1
公开(公告)日：2016-04-07
申请号：US14505534
申请日：2014-10-03
申请人： TSMC Solar Ltd.
发明人： Jyh-Lih WU
IPC分类号： H01L31/18 , H01L31/032 , H01L31/0336 , H01L31/0224
CPC分类号： H01L31/1864 , H01L31/022441 , H01L31/022466 , H01L31/0322 , H01L31/0324 , H01L31/0336 , H01L31/03365 , H01L31/0749 , H01L31/18 , H01L31/1828 , H01L31/1832 , H01L31/1884 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： A method includes: forming a buffer layer over an absorber layer of a photovoltaic device; and extrinsically doping the buffer layer after the forming step.
摘要翻译：一种方法包括：在光伏器件的吸收层上形成缓冲层; 并在形成步骤之后对该缓冲层进行外掺。

37. 发明授权

US09209331B2 Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom 有权
标题翻译：用于稳定的，敏感的光电检测器和由其制成的图像传感器的材料，制造设备和方法
公开(公告)号：US09209331B2
公开(公告)日：2015-12-08
申请号：US14336783
申请日：2014-07-21
申请人： InVisage Technologies, Inc.
发明人： Igor Constantin Ivanov , Edward Hartley Sargent , Hui Tian
IPC分类号： H01L29/06 , H01L31/00 , H01L31/0352 , H01L31/032 , H01L31/109 , H01L31/0336 , H01L31/0224 , H01L31/0384 , H01L31/09 , H01L27/146
CPC分类号： H01L31/101 , H01L27/14603 , H01L31/0224 , H01L31/032 , H01L31/0324 , H01L31/0336 , H01L31/035218 , H01L31/03845 , H01L31/09 , H01L31/109 , Y02E10/50
摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.
摘要翻译：光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。光敏材料包括p型半导体，并且光敏材料具有功函数。电路在第一触点和第二触点之间施加偏置电压。当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。第一次接触提供电子注入并阻止孔的提取。第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

38. 发明授权

US09209218B2 Infrared solid-state imaging device 有权
标题翻译：红外固态成像装置
公开(公告)号：US09209218B2
公开(公告)日：2015-12-08
申请号：US14487196
申请日：2014-09-16
申请人： Mitsubishi Electric Corporation
发明人： Takahiro Onakado
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L27/146 , H01L31/0304 , H01L31/0352
CPC分类号： H01L27/14649 , H01L27/14629 , H01L31/0304 , H01L31/035236
摘要： An infrared solid-state imaging device with unit detecting sections in a matrix form, wherein the unit detecting section includes: an infrared light guiding layer; a first reflecting layer on the infrared light guiding layer; an infrared light detecting section on the first reflecting layer, the infrared light detecting section including an infrared light absorbing layer and upper and lower contact layers; and first metal wiring connected to the upper contact layer, wherein a side wall of the unit detecting section is inclined at an angle smaller than 45° to a normal direction, to form a groove between the adjacent unit detecting sections, a first insulating layer is provided on the side wall of the unit detecting section and second metal wiring is provided on the first insulating layer, and a refractive index of the first reflecting layer is lower than that of the lower contact layer.
摘要翻译：一种具有矩阵形式的单元检测部分的红外固体成像装置，其中所述单元检测部分包括：红外光引导层; 红外光导层上的第一反射层; 所述第一反射层上的红外光检测部，所述红外光检测部具有红外光吸收层和上下接触层; 以及与所述上接触层连接的第一金属配线，其中，所述单元检测部的侧壁相对于法线方向倾斜成小于45°的角度，在相邻的单元检测部之间形成槽，第一绝缘层为设置在单元检测部分的侧壁上，第二金属布线设置在第一绝缘层上，并且第一反射层的折射率低于下接触层的折射率。

39. 发明授权

US09196726B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09196726B2
公开(公告)日：2015-11-24
申请号：US14275858
申请日：2014-05-12
申请人： UNITED MICROELECTRONICS CORP.
发明人： Jian-Cun Ke , Chih-Wei Yang , Chia-Fu Hsu
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L29/78 , H01L29/66 , H01L29/51 , H01L29/49 , H01L21/265 , H01L21/02
CPC分类号： H01L29/66575 , H01L21/02532 , H01L21/265 , H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L21/28088 , H01L21/31155 , H01L29/4925 , H01L29/4966 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/66545 , H01L29/7833
摘要： A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a lightly doped drain in the substrate; and performing a first implantation process for implanting fluorine ions at a tiled angle into the substrate and part of the gate structure.
摘要翻译：公开了半导体器件的制造方法。该方法包括以下步骤：提供衬底; 在基板上形成栅极结构; 在衬底中形成轻掺杂漏极; 以及执行用于以平铺方式将氟离子注入所述衬底和所述栅极结构的一部分的第一注入工艺。

40. 发明授权

US09166032B1 Non-volatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US09166032B1
公开(公告)日：2015-10-20
申请号：US14483725
申请日：2014-09-11
申请人： Kabushiki Kaisha Toshiba
发明人： Masaaki Higuchi , Katsuyuki Sekine , Fumiki Aiso , Takuo Ohashi , Tatsuya Okamoto
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L29/778 , H01L21/02
CPC分类号： H01L27/11556 , H01L21/0262 , H01L21/02636 , H01L27/11519 , H01L27/11524 , H01L27/11565 , H01L27/1157 , H01L27/11582 , H01L29/7785
摘要： According to one embodiment, a non-volatile memory device includes a plurality of electrodes, at least one semiconductor layer, conductive layers, and first and second insulating films. The electrodes are arranged side by side in a first direction. The semiconductor layer extends into the electrodes in the first direction. The conductive layers are provided between each electrode and the semiconductor layer and separated from each other in the first direction. The first insulating film contacts the conductive layers, and extends in the first direction along the semiconductor layer between the conductive layers and the semiconductor layer. The second insulating film is provided between the first insulating film and the semiconductor layer. The first insulating film includes a first portion located between the conductive layers and the second insulating film, and a second portion located between the interlayer insulating film and the second insulating film.
摘要翻译：根据一个实施例，非易失性存储器件包括多个电极，至少一个半导体层，导电层以及第一和第二绝缘膜。电极沿第一方向并排配置。半导体层沿第一方向延伸到电极中。导电层设置在每个电极和半导体层之间，并且在第一方向上彼此分离。第一绝缘膜与导电层接触，沿导电层和半导体层之间的半导体层在第一方向上延伸。第二绝缘膜设置在第一绝缘膜和半导体层之间。第一绝缘膜包括位于导电层和第二绝缘膜之间的第一部分和位于层间绝缘膜和第二绝缘膜之间的第二部分。

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