专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US4568397A Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials 失效
标题翻译： II-VI族半导体材料的金属有机气相外延生长
公开(公告)号：US4568397A
公开(公告)日：1986-02-04
申请号：US649650
申请日：1984-09-12
申请人： William E. Hoke , Richard Traczewski , Peter J. Lemonias
发明人： William E. Hoke , Richard Traczewski , Peter J. Lemonias
IPC分类号： C30B25/02 , H01L21/365 , H01L31/00
CPC分类号： H01L21/02395 , C30B25/02 , C30B29/48 , H01L21/02398 , H01L21/02411 , H01L21/0248 , H01L21/02562 , H01L21/0262 , Y10S148/063 , Y10S148/064 , Y10S148/08 , Y10S148/11
摘要： A method for growing a Group II-VI epitaxial layer on a substrate, said epitaxial layer having an electron mobility greater than 1.5.times.10.sup.5 cm.sup.2 /V-sec at 77.degree. K. and a carrier concentration less than 4.times.10.sup.15 (cm.sup.-3) is described. The method includes the steps of directing a plurality of vapor flows towards the substrate including a Group II metalorganic vapor having a mole fraction in the range of 3.0.times.10.sup.-4 to 4.5.times.10.sup.-4, a Group VI metalorganic vapor having a mole fraction in the range of 2.9.times.10.sup.-3 to 3.5.times.10.sup.-3 and a Group II elemental metal vapor having a mole fraction in the range of 2.6.times.10.sup.-2 to 3.2.times.10.sup.-2. The source of Group II metal is heated to at least 240.degree. C. while radiant energy is directed toward the reactor vessel to warm the zone of the reactor vessel between the Group II metal source and the substrate to at least 240.degree. C. The directed flows of Group II metalorganic vapor, Group VI metalorganic vapor and Group II metal vapor then chemically react to form the epitaxial layer.
摘要翻译：一种用于在衬底上生长II-VI族外延层的方法，所述外延层在77°K具有大于1.5×10 5 cm 2 / V·sec的电子迁移率，并且载流子浓度小于4×10 15（cm -3））。该方法包括以下步骤：将多个蒸气流引向基材，包括摩尔分数在3.0×10 -4至4.5×10 -4范围内的第II族金属有机蒸汽，第VI族金属有机蒸气的摩尔分数在范围为2.9×10 -3至3.5×10 -3，以及摩尔分数在2.6×10 -2至3.2×10 -2范围内的II族元素金属蒸气。将II族金属的来源加热至至少240℃，同时将辐射能量指向反应器容器以将第II族金属源和基底之间的反应器容器区域加热至至少240℃。定向第II族金属有机蒸气，第VI族金属有机蒸气和第II族金属蒸气的流动然后化学反应形成外延层。

32. 发明授权

US4459163A Amorphous semiconductor method 失效
标题翻译：非晶半导体方法
公开(公告)号：US4459163A
公开(公告)日：1984-07-10
申请号：US353097
申请日：1982-03-05
申请人： Alan G. MacDiarmid , Zoltan J. Kiss
发明人： Alan G. MacDiarmid , Zoltan J. Kiss
IPC分类号： C01B33/027 , C23C16/22 , C23C16/24 , H01L21/205 , H01L21/365 , H01L29/267 , H01L31/18 , C01B33/02
CPC分类号： C01B33/027 , C23C16/22 , C23C16/24 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262 , H01L29/267 , H01L31/18 , Y10S148/027 , Y10S148/059 , Y10S148/147
摘要： Preparation of amorphous semiconductor material that is suitable for use in a wide variety of devices by the pyrolytic decomposition of one or more gaseous phase polysemiconductanes, including polysilanes and polygermanes.
摘要翻译：通过热分解一种或多种气相多聚半导体（包括聚硅烷和多晶硅）来制备适用于各种器件的非晶半导体材料。

33. 发明授权

US4352834A Method for fabricating a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US4352834A
公开(公告)日：1982-10-05
申请号：US213016
申请日：1980-12-04
申请人： Kazuhisa Taketoshi , Chihaya Ogusu
发明人： Kazuhisa Taketoshi , Chihaya Ogusu
IPC分类号： H01L21/365 , C23C14/00 , H01L21/203 , H01L21/363 , H01L31/00 , H01L31/18
CPC分类号： C23C14/0021 , H01L21/02422 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02631 , H01L31/18
摘要： In a vacuum container an active (or atomic state) gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1.times.10.sup.-3 Torr or less is produced. In an atmosphere of the active (or atomic state) gas, a film, which consists of a compound presenting semiconductor characteristics (CdS, CdSe, ZnSe, ZnS, ZnTe, CdTe) or a solid solution thereof and presents a desired polarity property such as p, n, p.sup.+ or n.sup.+, is vapor-deposited on a substrate at a desired position with a desired thickness, so as to fabricate an evaporation device which is preferable, for example, as a photoconductive target for a television camera tube.
摘要翻译：在真空容器中，产生由活性氢，活性氧和活性氮中的任一种组成的分压为1×10 -3 Torr或更小的活性（或原子状态）气体。在活性（或原子状态）气体的气氛中，由具有半导体特性的化合物（CdS，CdSe，ZnSe，ZnS，ZnTe，CdTe）或其固溶体组成的膜，并且具有期望的极性特性，例如 p，n，p +或n +在期望的位置上以期望的厚度气相沉积在基板上，以便制造优选例如作为电视摄像机管的感光体的蒸发装置。

34. 发明授权

US4340617A Method and apparatus for depositing a material on a surface 失效
标题翻译：用于在表面上沉积材料的方法和装置
公开(公告)号：US4340617A
公开(公告)日：1982-07-20
申请号：US150816
申请日：1980-05-19
申请人： Thomas F. Deutsch , Daniel J. Ehrlich , Richard M. Osgood
发明人： Thomas F. Deutsch , Daniel J. Ehrlich , Richard M. Osgood
IPC分类号： C23C16/04 , C23C18/14 , H01L21/20 , H01L21/268 , H01L21/285 , H01L21/288 , H01L21/318 , H01L21/3205 , H01L21/365 , C23C13/00
CPC分类号： H01L21/268 , C23C16/047 , C23C18/14 , H01L21/02392 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L21/28512 , H01L21/28575 , H01L21/288 , H01L21/3185 , H01L21/32051 , Y10T29/413
摘要： An apparatus and method for depositing a layer of a surface-compatible material from the fluid phase onto a selected surface of a substrate body in a fluid deposition chamber features a laser source of optically focused energy directed toward the body surface in a selected pattern. The energy is focused at a position adjacent the selected surface. Apparatus is provided for introducing a fluid medium adjacent the surface of the body. The medium has at least one component which absorbs a portion of the incident laser energy at the selected frequency for effecting photodecomposition or photolysis of the component in the fluid phase. Thereby, the product(s) of the photolysis process are deposited in the selected pattern on the substrate surface. The pattern may be fixed in position or may be optically or mechanically scanned across the substrate body. Thereby, metal layers, metal interconnects, pn junction and ohmic contact forming layers, selectively doped regions, etc. can be accurately deposited on the substrate surface, and in particular semiconductor substrate surfaces without the use of masks.
摘要翻译：用于将流体相中的表面相容材料层沉积到流体沉积室中的基底主体的选定表面上的装置和方法具有以选定图案指向身体表面的光学聚焦能量的激光源。能量聚焦在与所选表面相邻的位置。提供了用于在身体表面附近引入流体介质的装置。所述介质具有至少一个以选定频率吸收入射激光能量的一部分的部件，以实现流体相中部件的光分解或光解。因此，光解过程的产物以选定的图案沉积在基底表面上。该图案可以固定在适当位置，或者可以在基板主体上进行光学或机械扫描。因此，金属层，金属互连，pn结和欧姆接触形成层，选择性掺杂区等可以在不使用掩模的情况下精确地沉积在衬底表面上，特别是半导体衬底表面上。

35. 发明授权

US4216037A Method for manufacturing a heterojunction semiconductor device by disappearing intermediate layer 失效
标题翻译：通过消失中间层制造异质结半导体器件的方法
公开(公告)号：US4216037A
公开(公告)日：1980-08-05
申请号：US1170
申请日：1979-01-05
申请人： Takashi Katoda , Masato Kishi
发明人： Takashi Katoda , Masato Kishi
IPC分类号： H01L21/20 , H01L21/205 , H01L21/365 , H01L29/737 , H01L33/00 , H01L31/18
CPC分类号： H01L33/0066 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/02557 , H01L21/0262 , H01L21/02639 , H01L21/02658 , H01L29/7371 , Y10S438/933
摘要： A method for manufacturing a semiconductor device comprises evaporating phosphorus on a silicon substrate to form a thin phosphorus layer and growing gallium phosphide on the substrate having the thin phosphorus layer, heterojunction being defined between the substrate and the semiconductor layer only in the region where the thin film had been formed prior to the growth of gallium phosphide.
摘要翻译：一种制造半导体器件的方法包括在硅衬底上蒸发磷以在具有薄磷层的衬底上形成薄磷层并生长磷化镓，仅在衬底和半导体层之间限定薄膜的区域在磷化镓生长之前形成了膜。

36. 发明授权

US3622381A Method for the preparation of a zinc oxide film 失效
标题翻译：氧化锌膜的制备方法
公开(公告)号：US3622381A
公开(公告)日：1971-11-23
申请号：US3622381D
申请日：1969-09-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： OHNISHI MASARU , IBUKI SUMIAKI , YOSHIZAWA MICHIO
IPC分类号： H01C17/12 , C01G9/02 , C03C17/23 , C23C14/06 , C23C14/08 , C23C14/58 , C30B28/12 , C30B29/16 , H01L21/365 , C23C13/04
CPC分类号： C23C14/0629 , C01G9/02 , C23C14/5806 , C23C14/5853
摘要： This invention relates to a method for the preparation of a zinc oxide by oxidizing a zinc selenide film. In detail, this invention relats to a method for the preparation of a zinc oxide film by vapordepositing zinc selenide as an evaporating source in place of zinc oxide to produce a zinc selenide film and then oxidizing said zinc selenide film.

37. 发明授权

US3462323A Process for the preparation of compound semiconductors 失效
标题翻译：制备化合物半导体的方法
公开(公告)号：US3462323A
公开(公告)日：1969-08-19
申请号：US3462323D
申请日：1966-12-05
申请人： MONSANTO CO
发明人： GROVES WARREN O
IPC分类号： H01L21/363 , H01L21/365 , H01L7/36
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02395 , H01L21/02411 , H01L21/02521 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02579 , Y10S148/056 , Y10S148/065 , Y10S148/072 , Y10S252/95 , Y10S252/951 , Y10S420/903

38. 发明授权

US3447977A Method of producing semiconductor members 失效
标题翻译：生产半导体成员的方法
公开(公告)号：US3447977A
公开(公告)日：1969-06-03
申请号：US3447977D
申请日：1967-11-13
申请人： SIEMENS AG
发明人： SIRTL ERHARD
IPC分类号： C23C16/00 , C30B25/02 , C30B29/06 , H01L21/00 , H01L21/205 , H01L21/365 , H01L7/36
CPC分类号： C30B29/06 , C23C16/00 , C30B25/02 , H01L21/00 , H01L21/02381 , H01L21/02532 , H01L21/02579 , H01L21/0262 , Y10S117/90 , Y10S117/906 , Y10S148/052

39. 发明授权

US09761437B2 Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus 有权
公开(公告)号：US09761437B2
公开(公告)日：2017-09-12
申请号：US14803336
申请日：2015-07-20
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Yosuke Ota , Yoshiro Hirose
IPC分类号： H01L21/465 , H01L21/02 , H01L21/314 , H01L21/365 , C23C16/52 , C23C16/455 , C23C16/30 , C23C16/40
CPC分类号： H01L21/02118 , C23C16/30 , C23C16/308 , C23C16/401 , C23C16/45523 , C23C16/45525 , C23C16/45546 , C23C16/45561 , C23C16/52 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/0223 , H01L21/02252 , H01L21/02255 , H01L21/02271 , H01L21/0228
摘要： Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.

40. 发明授权

US09735305B2 Monolithically integrated fluorescence on-chip sensor 有权
公开(公告)号：US09735305B2
公开(公告)日：2017-08-15
申请号：US14859961
申请日：2015-09-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Ning Li , Devendra K. Sadana , William T. Spratt
IPC分类号： G01N21/64 , H01S5/026 , H01L31/0232 , H01L31/173 , H01L33/00 , H01L33/32 , H01L31/18 , B01L3/00 , H01L31/12 , H01L25/16 , H01L21/02 , H01L27/15 , H01L27/144 , H01L21/365 , H01L21/44 , H01L21/465 , C12Q1/68
CPC分类号： H01L31/173 , B01L3/5027 , B01L3/502707 , C12Q1/6872 , G01N21/645 , G01N2021/6471 , H01L21/02392 , H01L21/02395 , H01L25/167 , H01L27/1443 , H01L27/15 , H01L31/02327 , H01L31/125 , H01L31/184 , H01L33/0062 , H01L33/0075 , H01L33/30 , H01L33/32 , H01L33/44 , H01L33/46 , H01L33/62 , H01S5/0262 , H01S5/0264
摘要： After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure comprising a second set of semiconductor layers suitable for formation of a light source over a substrate, the second multilayer structure is patterned to form a light source in a first region of the substrate. A first trench is then formed extending through the etch stop layer and the first multilayer structure to separate the first multilayer structure into a first part located underneath the light source and a second part that defines a photodetector located in a second region of the substrate. Next, an interlevel dielectric (ILD) layer is formed over the light source, the photodetector and the substrate. A second trench that defines a microfluidic channel is formed within the ILD layer and above the photodetector.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式