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1. 发明授权

US08101021B2 Flow method and reactor for manufacturing nanocrystals 有权
标题翻译：用于制造纳米晶体的流动方法和反应器
公开(公告)号：US08101021B2
公开(公告)日：2012-01-24
申请号：US11955774
申请日：2007-12-13
申请人： Brian Yen , Axel Guenther , Klavs F. Jensen , Moungi G. Bawendi , Martin Schmidt
发明人： Brian Yen , Axel Guenther , Klavs F. Jensen , Moungi G. Bawendi , Martin Schmidt
IPC分类号： C30B35/00 , H01L21/20
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00828 , B01J2219/00831 , B01J2219/00873 , B01J2219/00889 , B01J2219/00891 , B01J2219/00984 , B82Y30/00 , C01B19/007 , C01P2002/84 , C01P2004/52 , C01P2004/64 , Y10S117/90 , Y10S977/70 , Y10T117/10 , Y10T117/1016
摘要： A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method.
摘要翻译：具有窄且可控尺寸分布的纳米晶体群，并且可以通过分段流法制备。

2. 发明授权

US07959732B1 Apparatus and method for monitoring and controlling crystal growth 有权
标题翻译：用于监测和控制晶体生长的装置和方法
公开(公告)号：US07959732B1
公开(公告)日：2011-06-14
申请号：US11455400
申请日：2006-06-19
申请人： Jan Jozef Buzniak , Valery Prunier
发明人： Jan Jozef Buzniak , Valery Prunier
IPC分类号： C30B35/00
CPC分类号： C30B35/00 , C30B11/006 , C30B15/26 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： Apparatus and method for growing a crystal from a melt of a growth material, wherein crystal growth occurs at a solid-liquid interface between the melt and the crystal, and a characteristic of the solid-liquid interface is determined by using a float atop the melt and a detector for detecting displacement of the float. The characteristic of the solid-liquid interface can be at least one of the following: position, velocity or acceleration of the solid-liquid interface.
摘要翻译：用于从生长材料的熔体生长晶体的装置和方法，其中在熔体和晶体之间的固 - 液界面处发生晶体生长，并且通过使用熔体顶部的浮子来确定固 - 液界面的特性以及用于检测浮子的位移的检测器。固 - 液界面的特性可以是以下至少一个：固 - 液界面的位置，速度或加速度。

3. 发明授权

US07779890B2 Method and apparatus for production of a cast component 有权
标题翻译：用于生产铸件的方法和装置
公开(公告)号：US07779890B2
公开(公告)日：2010-08-24
申请号：US11894221
申请日：2007-08-20
申请人： Donald J. Frasier , M. Eric Schlienger , Patrick A. Vessely
发明人： Donald J. Frasier , M. Eric Schlienger , Patrick A. Vessely
IPC分类号： B22D41/00
CPC分类号： C30B11/00 , B22D47/00 , B29C64/165 , B29C64/40 , B33Y80/00 , C30B11/002 , C30B11/14 , C30B29/52 , G03F7/0037 , G03F7/0047 , Y10S117/90 , Y10T117/10 , Y10T117/1016
摘要： A system for producing cast components from molten metal. One form of the present invention includes a system for the precision pouring of molten metal within a casting mold. The precision pouring system is driven by a pressure differential.
摘要翻译：一种用于从熔融金属生产铸件的系统。本发明的一种形式包括用于在铸模内精确浇注熔融金属的系统。精密浇注系统由压差驱动。

4. 发明申请

US20100180815A1 CRUCIBLE AND METHOD FOR PULLING A SINGLE CRYSTAL 有权
标题翻译：用于拉伸单晶的可塑性和方法
公开(公告)号：US20100180815A1
公开(公告)日：2010-07-22
申请号：US12692456
申请日：2010-01-22
申请人： Masaru Sato , Masaki Morikawa
发明人： Masaru Sato , Masaki Morikawa
IPC分类号： C30B15/12 , C30B15/10
CPC分类号： C30B15/10 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.
摘要翻译：用于拉硅单晶的坩埚具有包括二氧化硅坩埚和覆盖在二氧化硅坩埚外部的石墨坩埚的双重结构，其中，二氧化硅坩埚在其开口端部设置有向内防止装置，用于使径向向外对二氧化硅坩埚的主体部分的力。

5. 发明申请

US20100055007A1 Apparatus for producing trichlorosilane 有权
标题翻译：三氯硅烷生产设备
公开(公告)号：US20100055007A1
公开(公告)日：2010-03-04
申请号：US12312367
申请日：2007-11-27
申请人： Toshiyuki Ishii
发明人： Toshiyuki Ishii
IPC分类号： B01J19/00 , B01J19/08
CPC分类号： C01B33/10763 , Y10S117/90 , Y10T117/10
摘要： This apparatus for producing trichlorosilane includes: a vessel having a gas inlet that introduces a feed gas into the vessel and a gas outlet that discharges a reaction product gas to the outside; a plurality of silicon core rods provided inside the vessel; and a heating mechanism that heats the silicon core rods, wherein a feed gas containing silicon tetrachloride and hydrogen is reacted to produce a reaction product gas containing trichlorosilane and hydrogen chloride. The silicon core rods may be disposed so as to stand upright on the bottom of the vessel, and the heating mechanism may have electrode portions that hold the lower end portions of the silicon core rods on the bottom of the vessel and a power supply that applies an electric current to the silicon core rods through the electrode portions to heat the silicon core rods.
摘要翻译：该三氯硅烷的制造装置具有：将具有将进料气体导入容器的气体入口的容器和向外部排出反应产物气体的气体出口; 设置在容器内部的多个硅芯棒; 以及加热硅芯棒的加热机构，其中使含有四氯化硅和氢气的进料气体反应以产生含有三氯硅烷和氯化氢的反应产物气体。硅芯棒可以设置成直立在容器的底部，并且加热机构可以具有将硅芯棒的下端部分保持在容器的底部上的电极部分和适用的电源通过电极部分到硅芯棒的电流以加热硅芯棒。

6. 发明申请

US20090173277A1 COOLING STRUCTURE FOR BODY OF CRYSTAL-GROWING FURNACE 失效
标题翻译：晶体生长炉体的冷却结构
公开(公告)号：US20090173277A1
公开(公告)日：2009-07-09
申请号：US12153917
申请日：2008-05-28
申请人： Shiow-Jeng Lew , Hur-Lon Lin
发明人： Shiow-Jeng Lew , Hur-Lon Lin
IPC分类号： C30B35/00
CPC分类号： C30B35/00 , C30B11/003 , C30B29/06 , Y10S117/90 , Y10T117/10 , Y10T117/1024 , Y10T117/1068
摘要： A cooling structure for the body of a crystal-growing furnace includes an upper body and a lower body. The upper body includes an outer upper shell and an inner upper shell, wherein an upper enclosing space is formed between the outer upper shell and the inner upper shell. The lower body includes an outer lower shell and an inner lower shell, wherein a lower enclosing space is formed between the outer lower shell and the inner lower shell. A plurality of water pipes are arranged, respectively, around the upper and the lower enclosing spaces, wherein plural spraying holes are provided on each of the water pipes. With the help of a pump, water from an outside water source is drawn through the spraying holes of the water pipes so as to cool down the body of the crystal-growing furnace. In adding an exhaust fan, warm air in the upper enclosing spaces can be driven out speedily. Further, in the upper and the lower enclosing spaces there are provided with emergent water pipes for showering more additional water to cool the body of the crystal-growing furnace in case of emergency such that further disaster can be avoided.
摘要翻译：晶体生长炉体的冷却结构包括上体和下体。上身包括外上壳体和内上壳体，其中在外上壳体和内上壳体之间形成上封闭空间。下体包括外下壳体和内下壳体，其中在外下壳体和内下壳体之间形成下封闭空间。多个水管分别设置在上封闭空间和下封闭空间周围，其中在每个水管上设置有多个喷射孔。在泵的帮助下，来自外部水源的水通过水管的喷射孔被吸入，以冷却晶体生长炉的主体。在添加排风扇时，可以快速地将上部封闭空间中的暖风吹出。此外，在上封闭空间和下封闭空间中，设置有紧急水管，用于在紧急情况下淋浴更多的水以冷却晶体生长炉的主体，从而可以避免进一步的灾难。

7. 发明授权

US07491270B2 Heat shield member and single crystal pulling device 有权
标题翻译：隔热构件和单晶拉拔装置
公开(公告)号：US07491270B2
公开(公告)日：2009-02-17
申请号：US11577989
申请日：2004-10-26
申请人： Hitoshi Sasaki , Syunji Kuragaki
发明人： Hitoshi Sasaki , Syunji Kuragaki
IPC分类号： C30B35/00
CPC分类号： C30B15/14 , C30B35/00 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068
摘要： A heat shielding member 20 that thermally shields the periphery of a single crystal 16 used in a Czochralski single crystal pulling device that pulls the single crystal 16 from a melt 15 that is collected in a crucible 10 is disclosed. The heat shielding member 20 is provided with an approximately cylindrical main body portion 21 arranged so as to surround the single crystal 16, with a lower end portion thereof extending to the vicinity of the melt 15, and an approximately annular bottom plate portion 22 that extends in the diameter direction from the bottom end portion of the main body portion 21 to cover the melt. The bottom plate portion 22 is attached to the main body portion 21 in the state of being severed in the circumferential direction at at least one location. With this constitution it is possible to provide a heat shielding member with superior durability and a single crystal pulling device that employs the heat shielding member.
摘要翻译：公开了一种热屏蔽构件20，该隔热构件20用于将从坩埚10中收集的熔体15拉出单晶16的切克拉斯基单晶拉制装置中使用的单晶16的周边。隔热构件20设置有围绕单晶16布置的近似圆筒形的主体部分21，其下端部延伸到熔体15附近，并且大致环形的底板部分22延伸在主体部分21的底端部的直径方向上，以覆盖熔体。底板部分22在至少一个位置处沿周向切断的状态附接到主体部分21。利用该结构，可以提供具有优异耐久性的隔热构件和采用该隔热构件的单晶拉制装置。

8. 发明授权

US07455731B2 Polycrystalline silicon rod and method for processing the same 有权
标题翻译：多晶硅棒及其加工方法
公开(公告)号：US07455731B2
公开(公告)日：2008-11-25
申请号：US11414342
申请日：2006-05-01
申请人： Mamoru Nakano , Yukio Yamaguchi , Teruhisa Kitagawa , Rikito Sato , Naoki Hatakeyama
发明人： Mamoru Nakano , Yukio Yamaguchi , Teruhisa Kitagawa , Rikito Sato , Naoki Hatakeyama
IPC分类号： C30B35/00
CPC分类号： C30B29/06 , C30B13/00 , C30B15/02 , Y10S117/90 , Y10S117/911 , Y10T117/1032 , Y10T117/1072 , Y10T428/2973
摘要： A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.
摘要翻译：根据本发明的多晶硅棒具有将多晶硅棒彼此端对端悬挂的结构，从而可以显着提高熔融多晶硅的效率。通过完全或部分地从棒上除去离开中心部分并且处理中心部分，优选周边部分而获得的多晶硅棒通过研磨去除，其量相当于直径的10至60％杆，然后进行槽形成处理。这使得退火不必要。

9. 发明申请

US20080196656A1 Crucible for the Crystallization of Silicon 有权
标题翻译：可溶于硅的结晶
公开(公告)号：US20080196656A1
公开(公告)日：2008-08-21
申请号：US11994151
申请日：2006-06-30
申请人： Gilbert Rancoule
发明人： Gilbert Rancoule
IPC分类号： C30B35/00 , B05D1/36 , B05D3/00
CPC分类号： C03C17/3411 , C03C17/004 , C03C17/3435 , C03C17/3482 , C03C2218/112 , C03C2218/114 , C04B41/009 , C04B41/52 , C04B41/89 , C30B11/002 , C30B15/10 , C30B35/002 , Y10S117/90 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , C04B41/4543 , C04B41/5066 , C04B41/5035 , C04B41/0072 , C04B41/5096 , C04B35/10 , C04B35/14 , C04B35/565 , C04B35/522 , C04B35/597
摘要： A crucible and method for the crystallization of silicon utilize release coatings. The crucible is used in the handling of molten materials that are solidified in the crucible and then removed as ingots. The crucible does not require the preparation of a very thick coating at the end user facilities, is faster and cheaper to produce, presents an improved release effect and allows the production of silicon ingot without cracks. The crucible includes a base body, a substrate layer containing silicon nitride, an intermediate layer containing silica, and a surface layer containing silicon nitride, silicon dioxide and silicon.
摘要翻译：用于硅结晶的坩埚和方法利用脱模涂层。坩埚用于处理在坩埚中固化的熔融材料，然后作为锭移除。坩埚不需要在最终用户设施制备非常厚的涂层，生产速度更快，更便宜，提供了改进的脱模效果，并且允许硅锭的生产没有裂纹。坩埚包括基体，含有氮化硅的基底层，含有二氧化硅的中间层和含有氮化硅，二氧化硅和硅的表面层。

10. 发明申请

US20080149294A1 Method and apparatus for production of a cast component 有权
公开(公告)号：US20080149294A1
公开(公告)日：2008-06-26
申请号：US11999483
申请日：2007-12-05
申请人： Donald J. Frasier , M. Eric Schlienger , Guy Allen Brady , Matthew T. Kush , Patrick A. Vessely
发明人： Donald J. Frasier , M. Eric Schlienger , Guy Allen Brady , Matthew T. Kush , Patrick A. Vessely
IPC分类号： B22D47/00
CPC分类号： C30B11/00 , B22D47/00 , B29C64/165 , B29C64/40 , B33Y80/00 , C30B11/002 , C30B11/14 , C30B29/52 , G03F7/0037 , G03F7/0047 , Y10S117/90 , Y10T117/10 , Y10T117/1016
摘要： A system for producing cast components from molten metal. One form of the present invention includes a system for the precision pouring of molten metal within a casting mold. The precision pouring system is driven by a pressure differential

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