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    • 43. 发明授权
    • Receiver of semiconductor memory apparatus
    • 半导体存储器的接收器
    • US07936620B2
    • 2011-05-03
    • US12483413
    • 2009-06-12
    • Tae-Jin HwangYong-Ju KimSung-Woo HanHee-Woong SongIc-Su OhHyung-Soo KimHae-Rang ChoiJi-Wang LeeJae-Min JangChang-Kun Park
    • Tae-Jin HwangYong-Ju KimSung-Woo HanHee-Woong SongIc-Su OhHyung-Soo KimHae-Rang ChoiJi-Wang LeeJae-Min JangChang-Kun Park
    • G11C7/00
    • G11C7/1078G11C7/1084
    • A receiver of a semiconductor memory apparatus includes a first input transistor configured to be turned ON when an input signal is equal to or more than a predetermined level; a second input transistor configured to be turned ON when the input signal is equal to or less than the predetermined level; a first output node voltage control unit configured to increase a voltage level of an output node when the first input transistor is turned ON; a second output node voltage control unit configured to decrease the voltage level of the output node when the second input transistor is turned ON; a third input transistor configured to increase the voltage level of the output node when an inversion signal of the input signal is equal to or less than the predetermined voltage level; and a fourth input transistor configured to decrease the voltage level of the output node when the inversion signal of the input signal is equal to or more than the predetermined voltage level.
    • 半导体存储装置的接收器包括:第一输入晶体管,其配置为当输入信号等于或大于预定电平时导通; 配置为当输入信号等于或小于预定电平时导通的第二输入晶体管; 第一输出节点电压控制单元,被配置为当所述第一输入晶体管导通时增加输出节点的电压电平; 第二输出节点电压控制单元,被配置为当所述第二输入晶体管导通时降低所述输出节点的电压电平; 第三输入晶体管,被配置为当所述输入信号的反相信号等于或小于所述预定电压电平时,增加所述输出节点的电压电平; 以及第四输入晶体管,被配置为当输入信号的反相信号等于或大于预定电压电平时降低输出节点的电压电平。
    • 44. 发明申请
    • SEMICONDUCTOR APPARATUS
    • US20110029700A1
    • 2011-02-03
    • US12648524
    • 2009-12-29
    • Ji Wang LEEHee Woong SONGTae Jin HWANG
    • Ji Wang LEEHee Woong SONGTae Jin HWANG
    • G06F1/12
    • G06F13/4072
    • A semiconductor apparatus includes a clock input buffer, an asynchronous data input buffer, and a synchronous data input buffer. The clock input buffer is configured to buffer an external clocks in order to generate an internal clock. The asynchronous data input buffer is configured to buffer data input through a data pad and output the buffered data. The synchronous data input buffer is configured to be synchronous with the internal clock to buffer the buffered data. The semiconductor apparatus is arranged so that the length of a line for transferring the internal clock to the synchronous data input buffer and the length of a line for transferring the buffered data to the synchronous data input buffer are substantially equal to each other.
    • 半导体装置包括时钟输入缓冲器,异步数据输入缓冲器和同步数据输入缓冲器。 时钟输入缓冲器配置为缓冲外部时钟以产生内部时钟。 异步数据输入缓冲器被配置为缓冲通过数据焊盘输入的数据并输出缓冲的数据。 同步数据输入缓冲器被配置为与内部时钟同步以缓冲缓冲的数据。 半导体装置被布置成使得用于将内部时钟传送到同步数据输入缓冲器的线的长度和用于将缓冲数据传送到同步数据输入缓冲器的线的长度基本上彼此相等。
    • 47. 发明授权
    • Receiver circuit of semiconductor memory apparatus
    • 半导体存储器的接收电路
    • US07733727B2
    • 2010-06-08
    • US12172108
    • 2008-07-11
    • Tae-Jin HwangYong-Ju KimHee-Woong SongIc-Su OhHyung-Soo KimHae-Rang ChoiJi-Wang Lee
    • Tae-Jin HwangYong-Ju KimHee-Woong SongIc-Su OhHyung-Soo KimHae-Rang ChoiJi-Wang Lee
    • G11C11/00
    • G11C7/1078G11C7/1084G11C7/1087G11C7/1093G11C7/22G11C7/222
    • A receiver circuit is described herein, comprising a first data determining unit configured to detect and amplify a voltage level difference between first and second external data and generate first and second sense signals and to generate first internal data in response to the first and second sense signals, a first offset control unit configured to generate first and second offset signals in response to the first and second sense signals, the first and second offset signals swinging between a maximum voltage level and a minimum voltage level determined based on a first code, a second data determining unit configured to detect and amplify the voltage level difference between the first and second external data to generate third and fourth sense signals and to generate second internal data in response to the third and fourth sense signals; and a second offset control unit for generating third and fourth offset signals in response to the third and fourth sense signals, the third and fourth offset signals swinging between a maximum voltage level and a minimum voltage level determined based on a second code, wherein the first data determining unit is configured to determine setup time and hold time of the first internal data in response to the third and fourth offset signals, and wherein the second data determining unit is configured to determine setup time and hold time of the second internal data in response to the first and second offset signals.
    • 本文描述了一种接收器电路,包括:第一数据确定单元,被配置为检测和放大第一和第二外部数据之间的电压电平差,并产生第一和第二感测信号,并响应于第一和第二感测信号产生第一内部数据 第一偏移控制单元,被配置为响应于第一和第二感测信号产生第一和第二偏移信号,第一和第二偏移信号在基于第一代码确定的最大电压电平和最小电压电平之间摆动,第二偏移控制单元 数据确定单元,被配置为检测和放大第一和第二外部数据之间的电压电平差,以产生第三和第四感测信号,并响应于第三和第四感测信号产生第二内部数据; 以及第二偏移控制单元,用于响应于第三和第四感测信号产生第三和第四偏移信号,第三和第四偏移信号在基于第二代码确定的最大电压电平和最小电压电平之间摆动,其中第一和第二偏移信号 数据确定单元被配置为响应于第三和第四偏移信号来确定第一内部数据的建立时间和保持时间,并且其中第二数据确定单元被配置为响应于确定第二内部数据的建立时间和保持时间 到第一和第二偏移信号。