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41. 发明申请

US20130032847A1 DISTRIBUTED CURRENT BLOCKING STRUCTURES FOR LIGHT EMITTING DIODES 有权
标题翻译：用于发光二极管的分布式电流阻塞结构
公开(公告)号：US20130032847A1
公开(公告)日：2013-02-07
申请号：US13198664
申请日：2011-08-04
申请人： Chih-Wei Chuang , Chao-Kun Lin
发明人： Chih-Wei Chuang , Chao-Kun Lin
IPC分类号： H01L33/14 , H01L33/38
CPC分类号： H01L33/38 , H01L33/14 , H01L33/145 , H01L33/22 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2933/0016
摘要： An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.
摘要翻译： LED器件包括条形电极，条状电流阻挡结构和多个分布电流阻挡结构。电流阻挡结构由诸如二氧化硅的绝缘材料形成。带状电流阻挡结构位于条形电极的正下方。多个电流阻挡结构可以是与带状电流阻挡结构相邻的行设置的盘形部分。电流阻挡结构的分布使得防止电流集中在紧邻电极的区域中，从而促进均匀的电流流入有源层并且促进在不在电极下方的区域中均匀的光产生。在另一方面，通过损害p-GaN层的区域以形成电阻区域来产生电流阻挡结构。在另一方面，通过蚀刻掉高度掺杂的接触区域以形成导电层之间的电阻接触区域来产生电流阻挡结构。

42. 发明申请

US20130032845A1 HIGH TEMPERATURE GOLD-FREE WAFER BONDING FOR LIGHT EMITTING DIODES 有权
标题翻译：用于发光二极管的高温无金色自由波键
公开(公告)号：US20130032845A1
公开(公告)日：2013-02-07
申请号：US13196839
申请日：2011-08-02
申请人： Chih-Wei Chuang , Chao-Kun Lin , Long Yang , Norihito Hamaguchi
发明人： Chih-Wei Chuang , Chao-Kun Lin , Long Yang , Norihito Hamaguchi
IPC分类号： H01L33/40 , H01L33/48
CPC分类号： H01L33/62 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L33/0079 , H01L33/405 , H01L2224/05624 , H01L2224/29118 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/83192 , H01L2224/83801 , H01L2924/00014 , H01L2924/0132 , H01L2924/10253 , H01L2924/1033 , H01L2924/12041 , H01L2924/181 , H01L2933/0066 , H01L2924/0665 , H01L2924/01013 , H01L2924/0103 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.
摘要翻译：通过在硅晶片上生长外延LED结构来制造垂直GaN基LED。添加银层并退火以承受> 450℃的温度。提供了在> 450℃有效5分钟的阻挡层（例如Ni / Ti），以防止粘结金属扩散到银中。然后，所得到的器件晶片结构使用在> 380℃熔化的高温接合金属（例如，AlGe）将晶片结合到载体晶片结构。在晶片接合之后，去除硅，无金电极（例如，Al ），并且结构被分割。与电极金属相容的高温焊料（例如ZnAl）用于管芯附着。芯片附着在> 380°C下发生十秒，而不熔化粘结金属或以其他方式损坏器件。整个LED不含金，因此可在大容量无金属半导体制造设备中制造。

43. 发明申请

US20130032810A1 LED ON SILICON SUBSTRATE USING ZINC-SULFIDE AS BUFFER LAYER 审中-公开
标题翻译：使用锌化镓作为缓冲层的硅衬底上的LED
公开(公告)号：US20130032810A1
公开(公告)日：2013-02-07
申请号：US13197765
申请日：2011-08-03
申请人： Zhen Chen
发明人： Zhen Chen
IPC分类号： H01L33/32 , H01L33/02
CPC分类号： H01L33/007 , H01L24/32 , H01L33/0079 , H01L33/10 , H01L33/12 , H01L33/22 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01012 , H01L2924/01029 , H01L2924/01322 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2924/00014
摘要： A vertical GaN-based blue LED has an n-type GaN layer that was grown over a ZnS layer that in turn was grown directly on a silicon substrate. In one example, the ZnS layer is a transitional buffer layer that is 50 nm thick, and the n-type GaN layer is at least 2000 nm thick. Growing the n-type GaN layer on the ZnS buffer layer reduces lattice defect density in the n-type layer. The ZnS buffer layer provides a good lattice constant match with the silicon substrate and provides a compound polar template for subsequent GaN growth. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate and the ZnS buffer layer are then removed. Electrodes are added and the structure is singulated to form finished LED devices.
摘要翻译：垂直GaN基蓝色LED具有在ZnS层上生长的n型GaN层，该ZnS层又直接在硅衬底上生长。在一个实例中，ZnS层是50nm厚的过渡缓冲层，n型GaN层至少为2000nm厚。在ZnS缓冲层上生长n型GaN层减少n型层中的晶格缺陷密度。 ZnS缓冲层与硅衬底提供良好的晶格常数匹配，并提供用于随后的GaN生长的复合极性模板。在形成LED的外延层之后，将导电载体晶片结合到该结构上。然后除去硅衬底和ZnS缓冲层。添加电极，并将结构单片化以形成成品的LED器件。

44. 发明授权

US08350485B2 Modular LED light bulb 有权
标题翻译：模块化LED灯泡
公开(公告)号：US08350485B2
公开(公告)日：2013-01-08
申请号：US13073726
申请日：2011-03-28
申请人： Ghulam Hasnain
发明人： Ghulam Hasnain
IPC分类号： H05B39/06 , H05B1/02
CPC分类号： H05B33/0815 , F21K9/232 , F21K9/238 , F21K9/64 , F21V3/12 , F21V17/002 , F21V17/164 , F21V23/005 , F21V23/0442 , F21V23/0457 , F21V29/74 , F21V29/85 , F21V29/90 , F21Y2115/10 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H01L2924/181 , H05B33/0803 , H05B33/0869 , H01L2924/00014 , H01L2924/00012
摘要： An LED-based lighting device and method for making the same are disclosed. The lighting device includes an LED light source mounted on a heat sink, a power adaptor, and a controller. The power adaptor is configured to be interchangeable with a conventional incandescent bulb power adapter. The controller provides an average current to the LED light source when power is coupled to the device via the power adaptor. The average current causes the LED light source to generate light of a predetermined standard intensity that is substantially independent of variations in the LED light source from device to device. In one aspect of the invention, the LED light source includes a plurality of LEDs connected in series, the LEDs are bonded to the heat sink and connected to one another in series by wire bonds and to conducting traces on the heat sink.
摘要翻译：公开了一种基于LED的照明装置及其制造方法。照明装置包括安装在散热器上的LED光源，电源适配器和控制器。电源适配器配置为可与传统白炽灯电源适配器互换。当电源通过电源适配器耦合到设备时，控制器提供平均电流到LED光源。平均电流使得LED光源产生基本上与LED光源从器件到器件的变化无关的预定标准强度的光。在本发明的一个方面，LED光源包括串联连接的多个LED，LED被结合到散热器并且通过引线接合而彼此串联连接并且在散热片上导电迹线。

45. 发明授权

US08309972B2 LEDs with efficient electrode structures 有权
标题翻译：具有高效电极结构的LED
公开(公告)号：US08309972B2
公开(公告)日：2012-11-13
申请号：US13358114
申请日：2012-01-25
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L27/15 , H01L29/74
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： Aspects include electrodes that provide specified reflectivity attributes for light generated from an active region of a Light Emitting Diode (LED). LEDs that incorporate such electrode aspects. Other aspects include methods for forming such electrodes, LEDs including such electrodes, and structures including such LEDs.
摘要翻译：方面包括为从发光二极管（LED）的有源区域产生的光提供特定的反射率属性的电极。结合这种电极方面的LED。其他方面包括形成这种电极的方法，包括这种电极的LED以及包括这种LED的结构。

46. 发明授权

US08227813B2 LED light source utilizing magnetic attachment 有权
标题翻译： LED光源采用磁性附件
公开(公告)号：US08227813B2
公开(公告)日：2012-07-24
申请号：US12888153
申请日：2010-09-22
申请人： Calvin B. Ward
发明人： Calvin B. Ward
IPC分类号： H01L27/15
CPC分类号： H05B33/0803 , F21V21/096 , F21Y2103/10 , F21Y2115/10 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H01L2924/00014
摘要： A light module and method for using the same are disclosed. The light module includes a heat-conducting structure and a plurality of LEDs bonded to a heat-conducting structure. The LEDs are bonded to a first surface of the heat-conducting structure and are mounted on the heat-conducting structure such that at least 50 percent of the heat generated by the LEDs is transferred to the heat-conducting structure. The heat-conducting structure includes a ferromagnetic material and is structured such that the heat-conducting structure bonds magnetically to a heat-dissipating structure with sufficient force to support the light module during the normal operation thereof when the light source is placed against the heat-dissipating structure. The present invention can be utilized for retrofitting an existing light fixture having an enclosure that includes a ferromagnetic material and a plurality of legacy light sources.
摘要翻译：公开了一种光模块及其使用方法。光模块包括导热结构和结合到导热结构的多个LED。 LED结合到导热结构的第一表面并且安装在导热结构上，使得由LED产生的热量的至少50％被传递到导热结构。导热结构包括铁磁材料，并且被构造成使得当光源被放置在耐热导电结构上时，导热结构在其正常操作期间以足够的力以磁力结合到散热结构以支撑光模块，消散结构。本发明可以用于改装具有包括铁磁材料和多个传统光源的外壳的现有灯具。

47. 发明授权

US08210698B2 Phosphor layer having enhanced thermal conduction and light sources utilizing the phosphor layer 有权
标题翻译：具有增强的热传导的荧光体层和利用荧光体层的光源
公开(公告)号：US08210698B2
公开(公告)日：2012-07-03
申请号：US12845104
申请日：2010-07-28
申请人： Heng Liu
发明人： Heng Liu
IPC分类号： F21V9/16
CPC分类号： H01L33/501 , H01L33/644
摘要： A light-conversion composition and light sources utilizing that composition are disclosed. The light-conversion composition includes a transparent carrier medium, a phosphor-conversion medium, and a heat-conducting medium. The transparent carrier medium is transparent to light at first and second wavelengths. The phosphor-conversion medium converts light of the first wavelength to light of the second wavelength, the phosphor-conversion medium being dispersed in the transparent carrier medium. The heat-conducting medium has a thermal resistance that is less than that of the carrier medium. The heat-conducting medium is dispersed in the transparent carrier medium such that the heat-conducting medium is present in a concentration sufficient to yield a net thermal resistance that is less than 90 percent of the carrier thermal resistance. The heat-conducting medium can include particles of a transparent crystalline material, such as silicon, diamond, or sapphire.
摘要翻译：公开了一种使用该组合物的光转化组合物和光源。光转换组合物包括透明载体介质，磷光体转换介质和导热介质。透明载体介质对于第一和第二波长的光是透明的。荧光体转换介质将第一波长的光转换成第二波长的光，荧光体转换介质分散在透明载体介质中。导热介质的热阻小于载体介质的热阻。导热介质分散在透明载体介质中，使得导热介质以足以产生小于载体热阻的90％的净热阻的浓度存在。导热介质可以包括透明结晶材料的颗粒，例如硅，金刚石或蓝宝石。

48. 发明申请

US20120138987A1 OPTICAL PLATFORM TO ENABLE EFFICIENT LED EMISSION 有权
标题翻译：光学平台，以实现有效的LED发射
公开(公告)号：US20120138987A1
公开(公告)日：2012-06-07
申请号：US13287990
申请日：2011-11-02
申请人： FRANK SHUM
发明人： FRANK SHUM
IPC分类号： H01L33/10
CPC分类号： H01L33/46 , H01L33/44 , H01L33/58
摘要： An integrated multi-layer apparatus and method of producing the same is disclosed. The apparatus comprises an LED, a beam shaping layer, and a refracting layer between the beam shaping layer from the LED. The refracting layer may have an index of refraction lower than the index of refraction of the LED and the beam shaping layer.
摘要翻译：公开了一种集成多层装置及其制造方法。该装置包括LED，光束整形层和来自LED的光束成形层之间的折射层。折射层可以具有低于LED和光束成形层的折射率的折射率。

49. 发明申请

US20120106137A1 THERMAL PIPE CAP 审中-公开
标题翻译：热管盖
公开(公告)号：US20120106137A1
公开(公告)日：2012-05-03
申请号：US13291765
申请日：2011-11-08
申请人： Keith Scott , Todd Farmer
发明人： Keith Scott , Todd Farmer
IPC分类号： F21S8/04
CPC分类号： H01L25/0753 , F21S8/061 , F21S8/065 , F21V21/116 , F21V29/713 , F21V29/717 , F21V29/773 , F21Y2105/10 , F21Y2113/13 , F21Y2115/10 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： A light fixture includes a body, a hollow arm extending out from the body, a pipe cap at a distal end of the arm, and one or more solid state light emitting devices supported by the pipe cap. The pipe cap thermally couples the one or more solid state light emitting devices to the arm.
摘要翻译：灯具包括主体，从主体伸出的中空臂，在臂的远端处的管帽和由管帽支撑的一个或多个固态发光器件。管帽将一个或多个固态发光器件热耦合到臂。

50. 发明申请

US20120099314A1 SOLID STATE LIGHTING DEVICE WITH AN INTEGRATED FAN 审中-公开
标题翻译：具有集成风扇的固态照明装置
公开(公告)号：US20120099314A1
公开(公告)日：2012-04-26
申请号：US13339308
申请日：2011-12-28
申请人： Keith Scott
发明人： Keith Scott
IPC分类号： F21V29/02
CPC分类号： F21V29/503 , F21K9/00 , F21V29/67 , F21Y2105/10 , F21Y2115/10 , H05K1/0203 , H05K2201/10106 , H05K2203/081 , H05K2203/097
摘要： A solid state lighting device includes a light source having one or more solid state light emitting cells and a substrate supporting the one or more solid state light emitting cells. The solid state lighting device also includes a fan integrated with the light source.
摘要翻译：固体照明装置包括具有一个或多个固态发光单元的光源和支撑一个或多个固态发光单元的基板。固态照明装置还包括与光源集成的风扇。

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