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41. 发明申请

US20170053774A1 STRUCTURE ELECTRON BEAM INSPECTION SYSTEM FOR INSPECTING EXTREME ULTRAVIOLET MASK AND STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK 审中-公开
标题翻译：结构电子束检测系统，用于检测极端的超紫外线掩膜和结构，用于放出极端的超紫外线掩模
公开(公告)号：US20170053774A1
公开(公告)日：2017-02-23
申请号：US15339496
申请日：2016-10-31
申请人： Hermes Microvision Inc.
发明人： You-Jin WANG , Chiyan KUAN , Chung-Shih PAN
IPC分类号： H01J37/02 , H05F3/02
CPC分类号： G01N23/2251 , H01J37/026 , H01J37/20 , H01J37/28 , H01J2237/004 , H01J2237/0041 , H01J2237/0044 , H01J2237/2007 , H01J2237/2008 , H01J2237/202 , H01J2237/2448 , H01J2237/2602 , H01J2237/2811 , H01J2237/2813 , H05F3/02
摘要： A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
摘要翻译：提供一种用于放电极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUU掩模上的累积充电是接地的。

42. 发明授权

US09564287B2 Substrate processing apparatus and substrate processing method using same 有权
标题翻译：基板处理装置及其基板处理方法
公开(公告)号：US09564287B2
公开(公告)日：2017-02-07
申请号：US14036885
申请日：2013-09-25
申请人： TOKYO ELECTRON LIMITED
发明人： Takeshi Ohse , Shinji Himori , Jun Abe , Norikazu Yamada
IPC分类号： H01J37/32 , H01J37/02
CPC分类号： H01J37/02 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
摘要翻译：基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元用于向下电极施加用于偏压的RF功率。通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出当第一RF功率施加单元的输出为设定输出时，施加单元。

43. 发明授权

US09551066B2 High-power pulsed magnetron sputtering process as well as a high-power electrical energy source 有权
标题翻译：大功率脉冲磁控溅射工艺以及大功率电能源
公开(公告)号：US09551066B2
公开(公告)日：2017-01-24
申请号：US12510543
申请日：2009-07-28
申请人： Jones Alami , Georg Erkens , Jürgen Müller , Jörg Vetter
发明人： Jones Alami , Georg Erkens , Jürgen Müller , Jörg Vetter
IPC分类号： C23C14/34 , C23C14/35 , C23C14/06 , H01J37/34 , H01J37/02
CPC分类号： C23C14/3485 , C23C14/06 , C23C14/35 , H01J37/026 , H01J37/3408 , H01J37/3444 , H01J37/3467
摘要： A high-power pulsed magnetron sputtering process, wherein within a process chamber by means of an electrical energy source a sequence of complex discharge pulses is produced by applying an electrical voltage between an anode and a cathode in order to ionize a sputtering gas. The complex discharge pulse is applied for a complex pulse time. The cathode has a target comprising a material to be sputtered for the coating of a substrate, and the complex discharge pulse includes an electrical high-power sputtering pulse having a negative polarity with respect to the anode and being applied for a first pulse-time, the high-power sputtering pulse being followed by an electrical low-power charge cleaning pulse having a positive polarity with respect to the anode and being applied for a second pulse-time. The ratio τ1/τ2 of the first pulse-time (τ1) in proportion to the second pulse-time (τ2) is 0.5 at the most.
摘要翻译：一种高功率脉冲磁控溅射工艺，其中通过电能源在处理室内，通过在阳极和阴极之间施加电压来产生一系列复杂的放电脉冲，以便电离溅射气体。复合放电脉冲施加于复数脉冲时间。阴极具有包括用于涂覆基板的溅射材料的靶，并且复合放电脉冲包括相对于阳极具有负极性并被施加第一脉冲时间的电高功率溅射脉冲，高功率溅射脉冲之后是相对于阳极具有正极性并被施加第二脉冲时间的电低功率电荷清除脉冲。与第二脉冲时间（τ2）成比例的第一脉冲时间（τ1）的比率τ1/τ2最多为0.5。

44. 发明授权

US09543113B2 Charged-particle beam device for irradiating a charged particle beam on a sample 有权
标题翻译：用于将带电粒子束照射在样品上的带电粒子束装置
公开(公告)号：US09543113B2
公开(公告)日：2017-01-10
申请号：US14759241
申请日：2014-01-10
申请人： Hitachi High-Technologies Corporation
发明人： Yasushi Ebizuka , Seiichiro Kanno , Naoya Ishigaki , Masashi Fujita
IPC分类号： H01L21/00 , H01J37/20 , H01J37/02 , H01J37/28 , H01J37/09
CPC分类号： H01J37/20 , H01J37/026 , H01J37/09 , H01J37/28 , H01J2237/2007
摘要： The present invention explains a charged-particle beam device for the purpose of highly accurately measuring electrostatic charge of a sample in a held state by an electrostatic chuck (105). In order to attain the object, according to the present invention, there is proposed a charged-particle beam device including an electrostatic chuck (105) for holding a sample on which a charged particle beam is irradiated and a sample chamber (102) in which the electrostatic chuck (105) is set. The charged-particle beam device includes a potential measuring device that measures potential on a side of an attraction surface for the sample of the electrostatic chuck (105) and a control device that performs potential measurement by the potential measuring device in a state in which the sample is attracted by the electrostatic chuck (105).
摘要翻译：本发明解释了一种带电粒子束装置，用于通过静电卡盘（105）高度准确地测量处于保持状态的样品的静电荷。为了达到上述目的，本发明提出一种带电粒子束装置，其特征在于，包括：静电卡盘（105），用于保持照射有带电粒子束的样品和样品室（102），所述样品室静电吸盘（105）被设定。带电粒子束装置包括：电位测量装置，其测量用于静电卡盘（105）的样本的吸引表面的电位;以及控制装置，其通过电位测量装置进行电位测量，其中，样品被静电吸盘（105）吸引。

45. 发明授权

US09362087B2 Charged particle beam apparatus 有权
公开(公告)号：US09362087B2
公开(公告)日：2016-06-07
申请号：US14560845
申请日：2014-12-04
申请人： Hermes Microvision Inc.
发明人： Zhongwei Chen , Jack Jau , Weiming Ren
IPC分类号： H01J37/26 , H01J37/28 , H01J37/10 , H01J37/14 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/02 , H01J37/285 , H01J37/29
CPC分类号： H01J37/28 , H01J37/026 , H01J37/10 , H01J37/14 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/261 , H01J37/285 , H01J37/292 , H01J2237/04926 , H01J2237/1405 , H01J2237/24475 , H01J2237/24495 , H01J2237/24528 , H01J2237/2801 , H01J2237/2804 , H01J2237/2806 , H01J2237/2814
摘要： The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.

46. 发明申请

US20160104596A1 ALIGNING A FEATURELESS THIN FILM IN A TEM 有权
标题翻译：在TEM中标记一个无特征薄膜
公开(公告)号：US20160104596A1
公开(公告)日：2016-04-14
申请号：US14878513
申请日：2015-10-08
申请人： FEI Company
发明人： Bart Buijsse , Gijs van Duinen
IPC分类号： H01J37/02 , H01J37/153 , H01J37/26
CPC分类号： H01J37/023 , H01J37/153 , H01J37/26 , H01J37/261 , H01J2237/024 , H01J2237/1532 , H01J2237/1534 , H01J2237/2602 , H01J2237/2614
摘要： When preparing a Hole-Free Phase Plates (HFPP) a preferably featureless thin film should be placed with high accuracy in the diffraction plane of the TEM, or a plane conjugate to it. Two methods for accurately placing the thin film in said plane are described. One method uses a Ronchigram of the thin film while the TEM is in imaging mode, and the magnification of the Ronchigram is tuned so that the magnification in the middle of the Ronchigram is infinite. The second method uses electrons scattered by the thin film while the TEM is in diffraction mode. When the thin film does not coincide with the diffraction plane, electrons scattered by the thin film seem to originate from another location than the cross-over of the zero beam. This is observed as a halo. The absence of the halo is proof that the thin film coincides with the diffraction plane.
摘要翻译：当准备无孔相板（HFPP）时，应该在TEM的衍射平面或与其共轭的平面上以高精度放置优选无特征薄膜。描述了将薄膜准确地放置在所述平面中的两种方法。当TEM处于成像模式时，一种方法使用薄膜的Ronchigram，并且调整Ronchigram的放大倍率，使得Ronchigram中间的放大倍率是无穷大的。第二种方法是在TEM处于衍射模式时使用由薄膜散射的电子。当薄膜与衍射平面不一致时，由薄膜散射的电子似乎源自与零光束交叉的另一位置。这被观察为光环。光晕的不存在证明薄膜与衍射平面重合。

47. 发明授权

US09299531B2 Mask cover, charged particle beam drawing apparatus and charged particle beam drawing method 有权
标题翻译：掩模罩，带电粒子束拉制装置和带电粒子束拉制法
公开(公告)号：US09299531B2
公开(公告)日：2016-03-29
申请号：US14257641
申请日：2014-04-21
申请人： NUFLARE TECHNOLOGY, INC.
发明人： Yu Asami , Michihiro Kawaguchi
IPC分类号： G01N21/00 , H01J37/02 , H01J37/317 , H01J37/30
CPC分类号： H01J37/026 , H01J37/3002 , H01J37/3174 , H01J2237/31788
摘要： A mask cover according to one embodiment of the present invention comprises a frame body having an opening at the center, a conductive earth plate installed on the frame body such that its end protrudes into the opening of the frame body, an earth pin provided on the end of the earth plate and electrically connected to the earth plate, and a conductive cover part surrounding the earth pin such that the tip end of the earth pin protrudes and a gap is present between the cover part and the earth pin.
摘要翻译：根据本发明的一个实施例的掩模罩包括：在中心具有开口的框架体，安装在框架体上的导电接地板，使其端部突出到框体的开口中，接地板的端部并且电连接到接地板，以及围绕接地引脚的导电覆盖部分，使得接地引脚的尖端突出并且在盖部分和接地引脚之间存在间隙。

48. 发明申请

US20160079042A1 Uniformity Control using Adjustable Internal Antennas 有权
标题翻译：使用可调内部天线的均匀性控制
公开(公告)号：US20160079042A1
公开(公告)日：2016-03-17
申请号：US14484018
申请日：2014-09-11
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Alexandre Likhanskii , Svetlana B. Radovanov
IPC分类号： H01J37/32 , H01J37/02
CPC分类号： H01J37/023 , H01J37/08 , H01J37/321 , H01J37/3211 , H01J37/32174 , H01J2237/061 , H01J2237/0817
摘要： A plasma chamber having improved plasma density is disclosed. The plasma chamber utilizes internal antennas. These internal antennas can be manipulated in a variety of ways to control the uniformity of the plasma density. In some embodiments, the conductive coil within the antenna is translated from a first location to a second location. For example, the entirety of the internal antennas may be translated within the plasma chamber. In another embodiment, the conductive coil disposed within the outer tube is translated relative to its outer tube. In another embodiment, the conductive coil within the outer tube may be bent and may be rotated within the outer tube. In another embodiment, the outer tube may also be bent and rotated. In other embodiments, ferromagnetic segments may be disposed in the outer tube to focus or block the electromagnetic energy emitted from the conductive coil.
摘要翻译：公开了一种具有改善的等离子体密度的等离子体室。等离子体室采用内部天线。可以以各种方式操纵这些内部天线以控制等离子体密度的均匀性。在一些实施例中，天线内的导电线圈从第一位置转换到第二位置。例如，整个内部天线可以在等离子体室内平移。在另一个实施例中，设置在外管内的导电线圈相对于其外管平移。在另一个实施例中，外管内的导电线圈可以被弯曲并且可以在外管内旋转。在另一个实施例中，外管也可以被弯曲和旋转。在其他实施例中，铁磁段可以设置在外管中以聚焦或阻挡从导电线圈发射的电磁能。

49. 发明授权

US09275823B2 Multiple gas injection system 有权
标题翻译：多重注气系统
公开(公告)号：US09275823B2
公开(公告)日：2016-03-01
申请号：US13541391
申请日：2012-07-03
申请人： Jorgen Rasmussen , Kevin C. Malinak
发明人： Jorgen Rasmussen , Kevin C. Malinak
IPC分类号： B44C1/22 , H01J37/02 , H01J37/16 , F16K11/07
CPC分类号： H01J37/3002 , B05B1/005 , B05B1/30 , F16K11/0716 , H01J37/02 , H01J37/023 , H01J37/16 , H01J2237/006 , H01J2237/317
摘要： A multi-positional valve is used to control the destination of gas flows from multiple gas sources. In one valve position the gases flow to an isolated vacuum system where the flow rate and mixture can be adjusted prior to introduction into a sample vacuum chamber. In another valve position the pre-mixed gases flow from the isolated vacuum chamber and through a needle into the sample vacuum chamber.
摘要翻译：多位置阀用于控制来自多个气源的气流的目的地。在一个阀位置，气体流到隔离的真空系统，其中可以在引入样品真空室之前调节流速和混合物。在另一个阀门位置，预混合气体从隔离的真空室流出并通过针头进入样品真空室。

50. 发明授权

US09257256B2 Templates including self-assembled block copolymer films 有权
标题翻译：包括自组装嵌段共聚物膜的模板
公开(公告)号：US09257256B2
公开(公告)日：2016-02-09
申请号：US14075647
申请日：2013-11-08
申请人： Micron Technology, Inc.
发明人： Dan B. Millward , Donald L. Westmoreland , Gurtej S. Sandhu
IPC分类号： H01J37/02 , B81C1/00 , B82Y30/00 , G03F7/00 , G03F7/26
CPC分类号： H01J37/02 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , G03F7/265 , Y10T428/24 , Y10T428/24149 , Y10T428/24174 , Y10T428/2438
摘要： Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.
摘要翻译：提供了使用自组装嵌段共聚物制造包括开口和线性微通道的亚光刻纳米尺度微结构阵列的方法，以及由这些方法形成的膜和器件。在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

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