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1. 发明申请

US20180358211A1 SUBSTRATE TREATING APPARATUS 审中-公开
公开(公告)号：US20180358211A1
公开(公告)日：2018-12-13
申请号：US16002978
申请日：2018-06-07
申请人： SEMES CO., LTD.
发明人： Sangmin MUN
IPC分类号： H01J37/32 , H01L21/67
CPC分类号： H01J37/32642 , H01J37/32651 , H01J37/32715 , H01J2237/024 , H01J2237/334 , H01L21/67069
摘要： Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chuck configured to support a substrate in a treatment space of a chamber into which a process gas is supplied, and a ring assembly surrounding the chuck, and the ring assembly includes an inner ring located such that a portion of the inner ring surrounds an outer side of the substrate supported by the chuck, an outer ring located to surround the inner ring, and a driver configured to move the outer ring upwards and downwards.

2. 发明申请

US20180261422A1 Scanning Electron Microscope 审中-公开
公开(公告)号：US20180261422A1
公开(公告)日：2018-09-13
申请号：US15914498
申请日：2018-03-07
申请人： JEOL Ltd.
发明人： Tatsuru Kuramoto , Yuichiro Ohori , Yoshinori Matsuda , Makoto Aoshima
IPC分类号： H01J37/09 , H01J37/28 , H01J37/244 , H01J37/14 , H01J37/30
CPC分类号： H01J37/09 , H01J37/023 , H01J37/14 , H01J37/244 , H01J37/28 , H01J37/3005 , H01J37/3056 , H01J2237/024 , H01J2237/0262 , H01J2237/14 , H01J2237/24475 , H01J2237/2448 , H01J2237/2804 , H01J2237/2806
摘要： A scanning electron microscope having a charged particle device that processes a specimen using a charged particle beam, the scanning electron microscope includes: an electron source; a secondary-electron detector that detects secondary electrons generated from the specimen; a backscattered-electron detector that is disposed closer to the electron source than a detection surface of the secondary-electron detector to detect backscattered electrons generated from the specimen; a shielding plate for shielding a detection surface of the backscattered-electron detector; and a moving mechanism that moves the shielding plate. In a state where the shielding plate is moved by the moving mechanism so as to shield the detection surface of the backscattered-electron detector, the shielding plate is located between the detection surface of the backscattered-electron detector and the detection surface of the secondary-electron detector.

3. 发明申请

US20180166253A1 Image Capture Assembly and Method for Electron Back Scatter Diffraction 审中-公开
$Image Capture Assembly and Method for Electron Back Scatter Diffraction$
公开(公告)号：US20180166253A1
公开(公告)日：2018-06-14
申请号：US15837587
申请日：2017-12-11
申请人： VG Systems Limited
发明人： Zoran PESIC , Chris STEPHENS , Austin DAY , Bryan BARNARD
IPC分类号： H01J37/22 , H01J37/28
CPC分类号： H01J37/224 , H01J37/222 , H01J37/244 , H01J37/28 , H01J37/295 , H01J2237/024 , H01J2237/10 , H01J2237/2443 , H01J2237/24475 , H01J2237/2804 , H01J2237/2805
摘要： The invention relates to an image capture assembly and method for use in an electron backscatter diffraction (EBSD) system. An image capture assembly comprises a scintillation screen (10) including a predefined screen region (11), an image sensor (20) comprising an array of photo sensors and a lens assembly (30). The image capture assembly is configured to operate in at least a first configuration or a second configuration. In the first configuration the lens assembly (30) projects the predefined region (11) of the scintillation screen (10) onto the array and in the second configuration the lens assembly (30) projects the predefined region (11) of the scintillation screen (10) onto a sub-region (21) of the array. In each of the first and second configurations the field of view of the lens assembly (30) is the same.

4. 发明申请

US20180138010A1 Charged Particle Beam Apparatus 审中-公开
公开(公告)号：US20180138010A1
公开(公告)日：2018-05-17
申请号：US15869460
申请日：2018-01-12
申请人： Hitachi High-Technologies Corporation
发明人： Muneyuki FUKUDA , Yoshinori MOMONOI , Akihiro MIURA , Fumihiro SASAJIMA , Hiroaki MITO
IPC分类号： H01J37/22 , H01J37/28
CPC分类号： H01J37/22 , H01J37/21 , H01J37/28 , H01J2237/024 , H01J2237/216 , H01J2237/2817
摘要： A charged particle beam device is provided that performs proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like. The charged particle beam device includes: an optical element which adjusts a charged particle beam emitted from a charged particle source; an adjustment element which adjusts an incidence condition of the charged particle beam with respect to the optical element; and a control device which controls the adjustment element, wherein the control device determines a difference between a first feature amount indicating a state of the optical element based on the condition setting of the optical element, and a second feature amount indicating a state where the optical element reaches based on the condition setting and executes adjustment by the adjustment element when the difference is greater than or equal to a predetermined value.

5. 发明申请

US20180012728A1 MULTI MODE SYSTEM WITH A DISPERSION X-RAY DETECTOR 审中-公开
公开(公告)号：US20180012728A1
公开(公告)日：2018-01-11
申请号：US15703925
申请日：2017-09-13
申请人： APPLIED MATERIALS ISRAEL LTD.
发明人： Alon Litman , Efim Vinnitsky
IPC分类号： H01J37/244 , H01J37/28 , H01J37/20 , H01J37/285
CPC分类号： H01J37/244 , H01J37/20 , H01J37/28 , H01J37/285 , H01J2237/024 , H01J2237/2445 , H01J2237/2807
摘要： A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position.

6. 发明授权

US09620326B2 Arc chamber with multiple cathodes for an ion source 有权
公开(公告)号：US09620326B2
公开(公告)日：2017-04-11
申请号：US14578575
申请日：2014-12-22
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chin-Tsung Lin , Hsiao-Yin Hsieh , Chi-Hao Huang , Hong-Shing Chou , Yeh-Chieh Wang
IPC分类号： H01J37/08 , H01J37/317 , H01J37/244
CPC分类号： H01J37/08 , H01J37/244 , H01J37/3171 , H01J2237/0203 , H01J2237/024 , H01J2237/026 , H01J2237/08 , H01J2237/303 , H01J2237/30405
摘要： An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.

7. 发明授权

US09437392B2 High-throughput ion implanter 有权
标题翻译：高通量离子注入机
公开(公告)号：US09437392B2
公开(公告)日：2016-09-06
申请号：US13662110
申请日：2012-10-26
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： William T. Weaver , Charles T. Carlson , Joseph C. Olson , James Buonodono , Paul Sullivan
IPC分类号： H01J37/00 , H01J37/20 , H01J37/302 , H01J37/317 , H01L21/266 , H01L21/67 , H01L31/18
CPC分类号： H01J37/20 , H01J37/3023 , H01J37/3171 , H01J2237/024 , H01J2237/31711 , H01L21/266 , H01L21/67213 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： One embodiment of this ion implanter includes an ion source and a process chamber. This process chamber is connected to the ion source and separated from the ion source by a plurality of extraction electrodes. A carrier holds multiple workpieces. A mask loader in the process chamber connects a mask to the carrier. A transfer chamber and load lock may be connected to the process chamber. The ion implanter is configured to perform either blanket or selective implantation of the workpieces.
摘要翻译：该离子注入机的一个实施例包括离子源和处理室。该处理室与离子源连接并通过多个提取电极与离子源分离。托架支撑多个工件。处理室中的掩模加载器将掩模连接到载体。传送室和加载锁可以连接到处理室。离子注入机被配置为执行工件的橡皮布或选择性植入。

8. 发明授权

US09396903B1 Apparatus and method to control ion beam current 有权
标题翻译：控制离子束电流的装置和方法
公开(公告)号：US09396903B1
公开(公告)日：2016-07-19
申请号：US14615602
申请日：2015-02-06
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Shengwu Chang , Kristen S. Rounds , William Leavitt , Michael St. Peter
IPC分类号： C23C14/48 , G21K1/08 , H01J37/317 , H01J37/08 , H01J37/10
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/024 , H01J2237/04735 , H01J2237/04756 , H01J2237/04924
摘要： An apparatus to control an ion beam for treating a substrate. The apparatus may include a fixed electrode configured to conduct the ion beam through a fixed electrode aperture and to apply a fixed electrode potential to the ion beam, a ground electrode assembly disposed downstream of the fixed electrode. The ground electrode assembly may include a base and a ground electrode disposed adjacent the fixed electrode and configured to conduct the ion beam through a ground electrode aperture, the ground electrode being reversibly movable along a first axis with respect to the fixed electrode between a first position and a second position, wherein a beam current of the ion beam at the substrate varies when the ground electrode moves between the first position and second position.
摘要翻译：控制用于处理基板的离子束的装置。该装置可以包括固定电极，其被配置为使离子束通过固定电极孔并且将固定电极电位施加到离子束，设置在固定电极下游的接地电极组件。接地电极组件可以包括基部和邻近固定电极设置的接地电极，并且被配置为使离子束通过接地电极孔，接地电极可相对于固定电极的第一轴线在第一位置以及第二位置，其中当所述接地电极在所述第一位置和所述第二位置之间移动时，所述衬底处的离子束的束电流变化。

9. 发明授权

US09318302B1 Integrated extraction electrode manipulator for ion source 有权
标题翻译：用于离子源的集成提取电极操纵器
公开(公告)号：US09318302B1
公开(公告)日：2016-04-19
申请号：US14674694
申请日：2015-03-31
申请人： Axcelis Technologies, Inc.
发明人： Bo Vanderberg , Joseph Valinski , Michael Cristoforo
IPC分类号： H01J27/02 , H01J37/08 , H01J37/30 , H01J37/317
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J2237/024 , H01J2237/061
摘要： A modular ion source and extraction apparatus comprises an ion source chamber selectively electrically coupled to a voltage potential, wherein the ion source chamber comprises an extraction aperture. An extraction electrode is positioned proximate to the extraction aperture of the ion source chamber, wherein the extraction electrode is electrically grounded and configured to extract ions from the ion source chamber. One or more linkages operably couple to the ion source chamber, and one or more insulators couple the extraction electrode to the respective one or more linkages, wherein the one or more insulators electrically insulate the respective one or more linkages from the extraction electrode, therein electrically insulating the extraction electrode from the ion source chamber. One or more actuators operably couple the one or more linkages to the ion source chamber, wherein the one or more actuators are configured to translate the one or more linkages with respect to the ion source chamber, therein translating the extraction electrode in one or more axes.
摘要翻译：模块化离子源和提取装置包括选择性地电耦合到电压电位的离子源室，其中离子源室包括提取孔。提取电极位于靠近离子源室的提取孔的位置，其中提取电极被电接地并被配置为从离子源室提取离子。一个或多个键可操作地耦合到离子源室，并且一个或多个绝缘体将引出电极耦合到相应的一个或多个键，其中一个或多个绝缘体将相应的一个或多个键与引出电极电绝缘，其中电将引出电极与离子源室绝缘。一个或多个致动器可操作地将所述一个或多个连杆耦合到所述离子源室，其中所述一个或多个致动器被配置成相对于所述离子源室平移所述一个或多个连杆，其中在所述离心源室中平移所述引出电极。

10. 发明授权

US09287085B2 Processing apparatus and method of treating a substrate 有权
标题翻译：处理基板的处理装置和方法
公开(公告)号：US09287085B2
公开(公告)日：2016-03-15
申请号：US14275763
申请日：2014-05-12
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Ernest E. Allen , Jon Ballou , Kevin M. Daniels , James P. Buonodono , Joseph P. Dzengeleski
IPC分类号： H01J37/08 , H01J37/20 , G21K5/08 , H01J37/304 , H01J37/305 , H01J37/317
CPC分类号： H01J37/20 , G21K5/08 , H01J37/304 , H01J37/3053 , H01J37/3171 , H01J37/32412 , H01J2237/024 , H01J2237/061 , H01J2237/1503
摘要： A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.
摘要翻译：一种处理装置，包括处理室，设置在处理室内的等离子体源，其中等离子体源可沿第一方向移动并且被配置为沿着与第一方向正交的第二方向发射离子束。该设备还可以包括设置在处理室内的用于支撑衬底的压板和邻近压板设置的离子束电流传感器。

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