专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08552465B2 Method for reducing stress in epitaxial growth 失效
标题翻译：减少外延生长中的应力的方法
公开(公告)号：US08552465B2
公开(公告)日：2013-10-08
申请号：US13293031
申请日：2011-11-09
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/12
CPC分类号： H01L33/12 , H01L33/007 , H01L33/32 , H01L33/46
摘要： A device and method for making the same are disclosed. The device includes a substrate having a first TEC, a stress relief layer overlying the substrate, and crystalline cap layer. The crystalline cap layer overlies the stress relief layer. The cap layer has a second TEC different from the first TEC. The stress relief layer includes an amorphous material that relieves stress between the crystalline substrate and the cap layer arising from differences in the first and second TECs at a growth temperature at which layers are grown epitaxially on the cap layer. The device can be used to construct various semiconductor devices including GaN LEDs that are fabricated on silicon or SiC wafers. The stress relief layer is generated by converting a layer of precursor material on the substrate after the cap layer has been grown to a stress-relief layer.
摘要翻译：公开了一种制造该装置及其制造方法。该器件包括具有第一TEC，覆盖衬底的应力消除层和晶体覆盖层的衬底。结晶覆盖层覆盖应力消除层。盖层具有与第一TEC不同的第二TEC。所述应力消除层包括无定形材料，其在由所述盖层外延生长所述层的生长温度时，减轻由所述第一和第二TEC的差异引起的所述晶体衬底和所述覆盖层之间的应力。该器件可用于构建在硅或SiC晶片上制造的包括GaN LED的各种半导体器件。应力消除层是通过在覆盖层已经生长到应力消除层之后将衬底上的前体材料层转化而产生的。

52. 发明申请

US20120319160A1 Method for Reducing Stress in Epitaxial Growth 失效
标题翻译：减少外延生长中的应力的方法
公开(公告)号：US20120319160A1
公开(公告)日：2012-12-20
申请号：US13293031
申请日：2011-11-09
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/12 , H01L33/32
CPC分类号： H01L33/12 , H01L33/007 , H01L33/32 , H01L33/46
摘要： A device and method for making the same are disclosed. The device includes a substrate having a first TEC, a stress relief layer overlying the substrate, and crystalline cap layer. The crystalline cap layer overlies the stress relief layer. The cap layer has a second TEC different from the first TEC. The stress relief layer includes an amorphous material that relieves stress between the crystalline substrate and the cap layer arising from differences in the first and second TECs at a growth temperature at which layers are grown epitaxially on the cap layer. The device can be used to construct various semiconductor devices including GaN LEDs that are fabricated on silicon or SiC wafers. The stress relief layer is generated by converting a layer of precursor material on the substrate after the cap layer has been grown to a stress-relief layer.
摘要翻译：公开了一种制造该装置及其制造方法。该器件包括具有第一TEC，覆盖衬底的应力消除层和晶体覆盖层的衬底。结晶覆盖层覆盖应力消除层。盖层具有与第一TEC不同的第二TEC。所述应力消除层包括无定形材料，其在由所述盖层外延生长所述层的生长温度时，减轻由所述第一和第二TEC的差异引起的所述晶体衬底和所述覆盖层之间的应力。该器件可用于构建在硅或SiC晶片上制造的包括GaN LED的各种半导体器件。应力消除层是通过在覆盖层已经生长到应力消除层之后将衬底上的前体材料层转化而产生的。

53. 发明申请

US20120133289A1 AC LED Light Source with Reduced Flicker 有权
标题翻译：交流LED光源，减少闪烁
公开(公告)号：US20120133289A1
公开(公告)日：2012-05-31
申请号：US13084331
申请日：2011-04-11
申请人： David Hum , Steven D. Lester
发明人： David Hum , Steven D. Lester
IPC分类号： H05B37/02
CPC分类号： H05B33/083 , H05B33/0824
摘要： A lighting apparatus and method for operating LED-based lighting devices are disclosed. The apparatus includes a receiver that receives a potential from a power source whose output varies as a function of time, an energy storage device, and an LED array. The energy storage device stores energy from the power source when the driving potential is greater than a predetermined value. The LED array has variable forward bias potential, the LED array generating light when a potential across the array is greater than the selected forward bias potential. A source selector connects the energy storage device to the array when the potential from the power source is less than a predetermined value. A controller that varies the forward bias potential such that the difference between the forward bias potential and potential across the array is maintained at a value less than a predetermined value.
摘要翻译：公开了一种用于操作基于LED的照明装置的照明装置和方法。该装置包括从输出随时间变化的电源接收电位的接收器，能量存储装置和LED阵列。当驱动电位大于预定值时，能量存储装置存储来自电源的能量。 LED阵列具有可变的正向偏置电位，当阵列上的电位大于所选择的正向偏置电位时，LED阵列产生光。当来自电源的电位小于预定值时，源选择器将能量存储装置连接到阵列。控制器，其改变正向偏置电位，使得正向偏置电位和阵列之间的电位之间的差保持在小于预定值的值。

54. 发明授权

US08115226B2 Low optical loss electrode structures for LEDs 有权
标题翻译：用于LED的低光损耗电极结构
公开(公告)号：US08115226B2
公开(公告)日：2012-02-14
申请号：US12888293
申请日：2010-09-22
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an dielectric material formed intermediate the electrode and a light emitting semiconductor material. Electrical continuity between the semiconductor material and the metal electrode is provided by an optically transmissive ohmic contact layer, such as a layer of Indium Tin Oxide. The metal electrode thus can be physically separated from the semiconductor material by one or more of the dielectric material and the ohmic contact layer. The dielectric layer can increase total internal reflection of light at the interface between the semiconductor and the dielectric layer, which can reduce absorption of light by the electrode. Such LED can have enhanced utility and can be suitable for uses such as general illumination.
摘要翻译：公开了一种用于增强LED的亮度和/或效率的电极结构。电极结构可以具有在电极之间形成的金属电极和电介质材料以及发光半导体材料。半导体材料和金属电极之间的电连续性由诸如氧化铟锡的光学透射欧姆接触层提供。金属电极因此可以通过一种或多种介电材料和欧姆接触层与半导体材料物理分离。电介质层可以增加半导体和电介质层之间的界面处的光的全内反射，这可以减少电极对光的吸收。这种LED可以具有增强的效用，并且可以适用于诸如一般照明的用途。

55. 发明授权

US08114690B2 Methods of low loss electrode structures for LEDs 有权
标题翻译： LED低损耗电极结构的方法
公开(公告)号：US08114690B2
公开(公告)日：2012-02-14
申请号：US12888379
申请日：2010-09-22
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L33/00 , H01L29/74 , H01L27/15
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： Aspects concerning a method of making electrical contact to a region of semiconductor in which one or more LEDs are formed include that a dielectric region can be formed on a p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.
摘要翻译：涉及与其中形成一个或多个LED的半导体区域进行电接触的方法的方面包括可以在半导体的ap区域上形成电介质区域，并且金属电极可以形成在（至少部分地）电介质材料的区域。由于金属电极通过一种或多种介电材料和透明欧姆与半导体的物理接触分离，所以可以使用诸如氧化铟锡的材料的透明层来在半导体和金属电极之间形成欧姆接触接触层（例如，ITO层）。介电材料可以增强光的全内反射并减少由金属电极吸收的光量。

56. 发明授权

US08084775B2 Light sources with serially connected LED segments including current blocking diodes 有权
标题翻译：具有串联连接的LED段的光源，包括电流阻塞二极管
公开(公告)号：US08084775B2
公开(公告)日：2011-12-27
申请号：US12725424
申请日：2010-03-16
申请人： Ghulam Hasnain , Steven D. Lester , Syn-Yem Hu , Jeff Ramer
发明人： Ghulam Hasnain , Steven D. Lester , Syn-Yem Hu , Jeff Ramer
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/145 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light source and method for making the same are disclosed. The light source includes a substrate and a light emitting structure that is deposited on the substrate. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first segment in series with the second segment. A first blocking diode between the light emitting structure and the substrate prevents current from flowing between the light emitting structure and the substrate when the light emitting structure is emitting light. The barrier extends through the light emitting structure into the first blocking diode.
摘要翻译：公开了一种光源及其制造方法。光源包括基板和沉积在基板上的发光结构。障碍物将发光结构分成彼此电隔离的第一和第二段。串联连接电极将第一段与第二段串联连接。当发光结构发光时，发光结构和衬底之间的第一阻挡二极管防止电流在发光结构和衬底之间流动。屏障通过发光结构延伸到第一阻塞二极管中。

57. 发明授权

US08039869B2 Gallium nitride device substrate containing a lattice parameter altering element 有权
标题翻译：含有晶格参数改变元件的氮化镓器件衬底
公开(公告)号：US08039869B2
公开(公告)日：2011-10-18
申请号：US11838467
申请日：2007-08-14
申请人： Steven D. Lester , Virginia M. Robbins , Scott W. Corzine
发明人： Steven D. Lester , Virginia M. Robbins , Scott W. Corzine
IPC分类号： H01L33/04 , H01L29/15
CPC分类号： H01L21/2007 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0079
摘要： A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.
摘要翻译：氮化镓器件衬底包括含有位于替代衬底上的附加晶格参数改变元件的氮化镓层。

58. 发明授权

US07993943B2 GaN based LED with improved light extraction efficiency and method for making the same 有权
标题翻译：具有提高光提取效率的GaN基LED和制造其的方法
公开(公告)号：US07993943B2
公开(公告)日：2011-08-09
申请号：US12688918
申请日：2010-01-18
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/32 , H01L33/42
摘要： A light-emitting device and the method for making the same are disclosed. The device includes a substrate, a light-emitting structure and a light scattering layer. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The light scattering layer includes a GaN crystalline layer characterized by an N-face surface. The N-face surface includes features that scatter light of the predetermined wavelength. The light-emitting structure is between the N-face surface and the substrate.
摘要翻译：公开了一种发光器件及其制造方法。该装置包括基板，发光结构和光散射层。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当从n型GaN层和p型GaN层的电子和空穴发射预定波长的光时，有源层 GaN层分别结合在一起。光散射层包括以N面表面为特征的GaN结晶层。 N面表面包括散射预定波长的光的特征。发光结构在N面和衬底之间。

59. 发明申请

US20110182064A1 Light Sources Utilizing Segmented LEDs to Compensate for Manufacturing Variations in the Light Output of Individual Segmented LEDs 有权
标题翻译：光源利用分段LED来补偿单个分段LED的光输出中的制造变化
公开(公告)号：US20110182064A1
公开(公告)日：2011-07-28
申请号：US13080439
申请日：2011-04-05
申请人： Ghulam Hasnain , Syn-Yem Hu , Steven D. Lester
发明人： Ghulam Hasnain , Syn-Yem Hu , Steven D. Lester
IPC分类号： F21S4/00 , H01J9/42
CPC分类号： H05B33/0827 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H05B33/083 , H05B33/0845 , H05B33/089 , H05B33/10 , H05B37/0263 , H01L2924/00
摘要： A light source and method for making the same are disclosed. The light source includes a plurality of Segmented LEDs connected in parallel to a power bus and a controller. The power bus accepts a variable number of Segmented LEDs. The controller receives AC power and provides a power signal on the power bus. Each Segmented LED is characterized by a driving voltage that is greater than 3 times the driving voltage of a conventional LED fabricated in the same material system as the Segmented LED. The number of Segmented LEDs in the light source is chosen to compensate for variations in the light output of individual Segmented LEDs introduced by the manufacturing process. In another aspect of the invention, the number of Segmented LEDs connected to the power bus can be altered after the light source is assembled.
摘要翻译：公开了一种光源及其制造方法。光源包括并联连接到电源总线和控制器的多个分段LED。电源总线接受可变数量的分段LED。控制器接收交流电源，并在电源总线上提供电源信号。每个分段LED的特征在于驱动电压大于在与分段LED相同的材料系统中制造的常规LED的驱动电压的3倍。选择光源中的分段LED的数量来补偿由制造过程引入的各个分段LED的光输出的变化。在本发明的另一方面，在组装光源之后，可以改变连接到电力总线的分段LED的数量。

60. 发明授权

US07897992B2 Low optical loss electrode structures for LEDs 有权
标题翻译：用于LED的低光损耗电极结构
公开(公告)号：US07897992B2
公开(公告)日：2011-03-01
申请号：US12493499
申请日：2009-06-29
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.
摘要翻译：公开了一种用于增强LED的亮度和/或效率的电极结构。电极结构可以具有形成在电极和发光半导体材料之间的金属电极和光学透射的厚电介质材料。电极和厚电介质配合以将来自半导体材料的光反射回半导体，以增强光最终从半导体材料透射的可能性。这种LED可以具有增强的效用，并且可以适用于诸如一般照明的用途。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式