专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US09331271B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
公开(公告)号：US09331271B2
公开(公告)日：2016-05-03
申请号：US14098604
申请日：2013-12-06
申请人： Headway Technologies, Inc.
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： H01L43/12 , C23C14/34 , G11C11/16 , B82Y25/00
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

52. 发明授权

US09299367B1 Perpendicular magnetic recording (PMR) writer with minimized internal flux shunting 有权
标题翻译：垂直磁记录（PMR）写入器，最小化内部通量分流
公开(公告)号：US09299367B1
公开(公告)日：2016-03-29
申请号：US14813887
申请日：2015-07-30
申请人： Headway Technologies, Inc.
发明人： YuHui Tang , Yaguang Wei , Yue Liu , Jiun-Ting Lee , Moris Dovek
IPC分类号： G11B5/127
CPC分类号： G11B5/127 , G11B5/1278 , G11B5/23 , G11B5/3116 , G11B5/315
摘要： A perpendicular magnetic recording (PMR) writer is disclosed wherein a 19-24 kG hot seed layer is formed between a gap layer and a 10-19 kG magnetic layer in a partially wrapped around shield structure involving side shields and trailing shield to reduce internal flux shunting, improve writability, and enable side gap and write gap dimensions 5-10 nm smaller than typical writers for conventional and shingled magnetic recording. Side shields have a bottom surface formed along a plane that is parallel to the main pole leading edge, and at a down-track distance from 50 nm above to 100 nm below the leading edge. Cross-track and down-track field gradients are improved by fully coupling the trailing shield and side shield hot seed layers. Also, side shield hot seed layers have a height
摘要翻译：公开了一种垂直磁记录（PMR）写入器，其中在间隙层和10-19kG磁性层之间形成一个19-24kG的热种子层，该部分缠绕的屏蔽结构包括侧屏蔽和后屏蔽以减少内部通量分流，改善可写性，并使边缘间隙和写入间隙尺寸比常规和带状磁记录的典型作者小5-10纳米。侧面屏蔽具有沿平行于主极前缘的平面形成的底表面，并且在前缘下方50nm至100nm之间的下轨道距离处。通过完全耦合后盾和侧屏热种子层，提高了跨轨道和下轨道场梯度。此外，侧屏热种子层的高度<0.15微米并且小于10-19kG侧屏蔽层高度以减少内部通量分流。

53. 发明申请

US20150380016A1 MAGNETIC HEAD FOR PERPENDICULAR MAGNETIC RECORDING INCLUDING ANGLED SIDE SHIELDS SURFACES 有权
标题翻译：用于磁性记录的磁头，包括侧面的表面
公开(公告)号：US20150380016A1
公开(公告)日：2015-12-31
申请号：US14319681
申请日：2014-06-30
申请人： Yoshitaka SASAKI , Kazuki SATO , Hiroyuki ITO , Shigeki TANEMURA , Hironori ARAKI , Kazumasa YASUDA
发明人： Yoshitaka SASAKI , Kazuki SATO , Hiroyuki ITO , Shigeki TANEMURA , Hironori ARAKI , Kazumasa YASUDA
IPC分类号： G11B5/127 , G11B5/17 , G11B5/11
CPC分类号： G11B5/1278 , G11B5/11 , G11B5/17 , G11B5/3116 , G11B5/315 , G11B5/3163 , Y10T29/49048
摘要： A first side shield has a first sidewall and a second sidewall. A second side shield has a third sidewall and a fourth sidewall. The distance between the first sidewall and the third sidewall decreases with increasing proximity to the top surface of a substrate. The second and fourth sidewalls are close to perpendicular to the top surface of the substrate. Each of the second and fourth sidewalls has an edge farthest from the top surface of the substrate, the edge being parallel to the medium facing surface. The main pole has a first, a second, a third and a fourth side surface. The first side surface is opposed to the first sidewall. A portion of the second side surface is opposed to the second sidewall. The third side surface is opposed to the third sidewall. A portion of the fourth side surface is opposed to the fourth sidewall.
摘要翻译：第一侧屏蔽件具有第一侧壁和第二侧壁。第二侧屏蔽件具有第三侧壁和第四侧壁。第一侧壁和第三侧壁之间的距离随着靠近衬底顶表面的增加而减小。第二和第四侧壁靠近垂直于基板的顶表面。第二和第四侧壁中的每一个具有距衬底顶表面最远的边缘，该边缘平行于介质面向表面。主极具有第一，第二，第三和第四侧面。第一侧表面与第一侧壁相对。第二侧表面的一部分与第二侧壁相对。第三侧面与第三侧壁相对。第四侧面的一部分与第四侧壁相对。

54. 发明授权

US09188650B2 Patterned MR device with controlled shape anisotropy 有权
标题翻译：具有受控形状各向异性的图案化MR器件
公开(公告)号：US09188650B2
公开(公告)日：2015-11-17
申请号：US14245641
申请日：2014-04-04
申请人： Headway Technologies, Inc.
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： G11B5/39 , G01R33/09 , B82Y25/00 , B82Y40/00 , H01F10/32 , H01F41/30
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes may be located in the plane of the free layer a maximum distance of 0.1 microns, above a plane that includes a top surface of the free layer, or below a plane that includes the bottom surface of the magnetic sensor. Edges of each side stripe may be aligned above or below a portion of the magnetic sensor.
摘要翻译：描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。软磁材料的侧面条纹吸收外部磁场通量，并将助焊剂浓缩到流入传感器的边缘，以促进较大的MR传感器磁化旋转。侧条可以位于自由层的平面中，最大距离为0.1微米，在包括自由层的顶表面的平面之上，或者在包括磁传感器的底表面的平面之下。每个侧条纹的边缘可以在磁传感器的一部分上方或下方对准。

55. 发明授权

US09170879B2 Method and apparatus for scrubbing accumulated data errors from a memory system 有权
标题翻译：用于从存储器系统中擦除累积的数据错误的方法和装置
公开(公告)号：US09170879B2
公开(公告)日：2015-10-27
申请号：US12456923
申请日：2009-06-24
申请人： Hsu Kai Yang
发明人： Hsu Kai Yang
IPC分类号： G06F11/10 , G11C16/34 , G11C29/46
CPC分类号： G06F11/106 , G06F11/1096 , G11C16/3418 , G11C16/349 , G11C29/46
摘要： A data scrubbing apparatus corrects disturb data errors occurring in an array of memory cells such as SMT MRAM cells. The data scrubbing apparatus receives an error indication that an error has occurred during a read operation of a grouping of memory cells within the array of memory cells. The data scrubbing apparatus may generate an address describing the location of the memory cells to be scrubbed. The data scrubbing apparatus then commands the array of memory cells to write back the corrected data. Based on a scrub threshold value, the data scrubbing apparatus writes the corrected data back after a specific number of errors. The data scrubbing apparatus may further suspend writing back during a writing of data. The data scrubbing apparatus provides a busy indicator externally during a write back of corrected data.
摘要翻译：数据擦除装置校正在诸如SMT MRAM单元的存储单元阵列中发生的干扰数据错误。数据擦除装置接收在存储器单元阵列内的一组存储器单元的读取操作期间发生错误的错误指示。数据擦除装置可以生成描述要擦除的存储器单元的位置的地址。然后，数据擦除装置命令存储器单元阵列回写校正的数据。基于擦除阈值，数据擦除装置在经过特定数量的错误之后写入校正后的数据。数据擦除装置可以在写入数据期间进一步中止写回。在校正数据的回写期间，数据擦除装置在外部提供忙指示符。

56. 发明授权

US09103012B2 Copper plating method 有权
标题翻译：镀铜方法
公开(公告)号：US09103012B2
公开(公告)日：2015-08-11
申请号：US12931854
申请日：2011-02-11
申请人： Chao-Peng Chen , Jas Chudasama , Chien-Li Lin , David Wagner
发明人： Chao-Peng Chen , Jas Chudasama , Chien-Li Lin , David Wagner
IPC分类号： C25D5/34 , C23C2/02 , C23C14/58 , C25D5/02 , G11B5/17 , C23F1/12
CPC分类号： C23F1/12 , C23C2/02 , C23C14/5873 , C25D5/022 , C25D5/34 , G11B5/17
摘要： A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.
摘要翻译：公开了一种在镀覆工艺期间激活铜籽晶层的方法，其包括施加由超声波雾化器产生的蒸气。通电的蒸气滴包括水和弱的有机酸如乙酸，乳酸，柠檬酸，尿酸，草酸或甲酸，其蒸气压接近于水。弱有机酸优选具有足够高的pKa以避免Cu蚀刻，但是足够的酸性以与高通量制造相容的速率除去氧化铜。在一个实施方案中，将弱酸/水蒸汽施加到旋转碗中的基底上，然后在同一旋转碗中进行去离子水漂洗步骤。改进的润湿性导致随后镀覆的铜膜的均匀性提高。由于化学品消耗减少和产品产量提高，实现了大量的成本节约。

57. 发明授权

US09053713B2 High coercivity magnetic film for use as a hot seed in a magnetic write head and method to grow it 有权
标题翻译：用于磁写头中的热种子的高矫顽力磁性膜及其生长方法
公开(公告)号：US09053713B2
公开(公告)日：2015-06-09
申请号：US13651437
申请日：2012-10-14
申请人： Headway Technologies, Inc.
发明人： Shengyuan Wang , Kunliang Zhang , Min Li
IPC分类号： G11B5/127 , G11B5/31 , C23C14/02 , C23C14/16
CPC分类号： G11B5/1278 , C23C14/024 , C23C14/16 , C23C14/35 , C23C14/351 , C23C14/358 , G11B5/1877 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49034 , Y10T29/49043 , Y10T428/1171
摘要： A sub-structure, suitable for use as a hot seed on which to form a perpendicular magnetic main write pole, is described. It is made up of a buffer layer of atomic layer deposited alumina on which there are one or more seed layers having a body-centered cubic (bcc) crystal structure. Finally, the high coercivity magnetic film lies on the seed layer(s). It is critical that the high coercivity magnetic film be deposited at a very low deposition rate (around 1 Angstrom per second).
摘要翻译：描述适合用作形成垂直磁性主要写入极的热种子的子结构。它由原子层沉积的氧化铝的缓冲层组成，其上有一个或多个具有体心立方（bcc）晶体结构的种子层。最后，高矫顽力磁性膜位于种子层上。高矫顽磁性膜以非常低的沉积速率（约1埃每秒）沉积是至关重要的。

58. 发明授权

US09040178B2 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US09040178B2
公开(公告)日：2015-05-26
申请号：US12284409
申请日：2008-09-22
申请人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： G11B5/39 , B82Y10/00 , B82Y25/00 , G01R33/09
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is
摘要翻译：一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，COBM或CoBLM制成的至少一个含B（BC）层的自由层和由CoFe，CoFeM制成的多个不含B的（NBC）或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。一个实施方案由（NBC / BC）n表示，其中n≥2。第二实施例由（NBC / BC）n / NBC表示，其中n≥1。在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。总自由层厚度<100埃。这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

59. 发明授权

US09034662B2 MR enhancing layer (MREL) for spintronic devices 有权
标题翻译：用于自旋电子设备的MR增强层（MREL）
公开(公告)号：US09034662B2
公开(公告)日：2015-05-19
申请号：US14244923
申请日：2014-04-04
申请人： Headway Technologies, Inc.
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： H01L43/12 , G11B5/39 , B82Y25/00 , B82Y40/00 , H01F41/30 , H01L29/66 , H01L43/10 , H01L43/08 , H01L43/02 , H01F1/40 , H01F10/193 , H01F10/32 , H01L29/82
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11B5/3929 , G11B5/3967 , H01F1/401 , H01F10/193 , H01F10/1936 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L29/66984 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129
摘要： The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer.
摘要翻译：通过将一个或多个磁阻增强层（MREL）插入到一个或多个磁性层的中心附近，例如内部固定（AP1）层，自旋注入层（SIL），场生成层（FGL）和自由层。 MREL是低带隙的层，诸如ZnO的高电子迁移率半导体或诸如Bi的半金属。 MREL还可以包括接触半导体或半金属层的底表面的第一导电层和接触半导体或半金属层的顶表面的第二导电层。

60. 发明授权

US09030776B1 Magnetic head for perpendicular magnetic recording including a main pole and a shield 有权
标题翻译：用于垂直磁记录的磁头，包括主极和屏蔽
公开(公告)号：US09030776B1
公开(公告)日：2015-05-12
申请号：US14107714
申请日：2013-12-16
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Kazuki Sato , Shigeki Tanemura , Yukinori Ikegawa , Hironori Araki , Tatsuya Shimizu
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Kazuki Sato , Shigeki Tanemura , Yukinori Ikegawa , Hironori Araki , Tatsuya Shimizu
IPC分类号： G11B5/39 , G11B5/11 , G11B5/17
CPC分类号： G11B5/11 , G11B5/17 , G11B5/3116 , G11B5/3123 , G11B5/3143 , G11B5/315
摘要： A magnetic head includes a main pole, a write shield, and first and second nonmagnetic layers. The main pole has a top surface including an inclined surface portion. The inclined surface portion includes a first portion and a second portion, the first portion being closer to a medium facing surface. The write shield includes an inclined portion facing toward the top surface of the main pole. The first nonmagnetic layer is interposed between the inclined portion and the second portion of the inclined surface portion. The second nonmagnetic layer is interposed between the inclined portion and a combination of the first portion of the inclined surface portion and the first nonmagnetic layer.
摘要翻译：磁头包括主极，写屏蔽以及第一和第二非磁性层。主极具有包括倾斜表面部分的顶表面。倾斜表面部分包括第一部分和第二部分，第一部分更靠近介质面向表面。写入屏蔽包括面向主极的顶表面的倾斜部分。第一非磁性层插入倾斜部分和倾斜表面部分的第二部分之间。第二非磁性层介于倾斜部分和倾斜表面部分的第一部分与第一非磁性层的组合之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式