专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09373777B2 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications 有权
标题翻译： Co / Ni多层膜，具有改进的磁性器件应用的面外各向异性
公开(公告)号：US09373777B2
公开(公告)日：2016-06-21
申请号：US14529242
申请日：2014-10-31
申请人： Headway Technologies, Inc.
发明人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
IPC分类号： H01L43/00 , H01L33/00 , H01L43/10 , G01R33/09 , G01R33/12 , H01L43/08 , H01L43/12 , G11B5/127 , G11C11/16 , H01L43/02 , G11B5/39
CPC分类号： H01L43/10 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B5/3909 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A MTJ for a spintronic device includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：用于自旋电子器件的MTJ包括薄层种子层，其通过（Co / Ni）n组合物或类似物，其中n为2至30，在上层层叠层中增强垂直磁各向异性（PMA）。种子层优选为NiCr ，NiFeCr，Hf或其复合物，其厚度为10至100埃。此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。层叠层可以用作MTJ中的参考层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

2. 发明授权

US09331271B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
公开(公告)号：US09331271B2
公开(公告)日：2016-05-03
申请号：US14098604
申请日：2013-12-06
申请人： Headway Technologies, Inc.
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： H01L43/12 , C23C14/34 , G11C11/16 , B82Y25/00
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

3. 发明申请

US20150061055A1 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications 审中-公开
标题翻译：具有改进的磁性器件应用的平面各向异性的Co / Ni多层
公开(公告)号：US20150061055A1
公开(公告)日：2015-03-05
申请号：US14529242
申请日：2014-10-31
申请人： Headway Technologies, Inc.
发明人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
IPC分类号： H01L43/10 , H01L43/02
CPC分类号： H01L43/10 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B5/3909 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / Ni）n组合物等在上层叠层中提高垂直磁各向异性（PMA），其中n为2至30.种子层优选为NiCr，NiFeCr，Hf，或其复合物，厚度为10〜100埃。此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。层叠层可以用作MTJ中的参考层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

4. 发明授权

US09472752B2 High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications 有权
标题翻译：用于磁性器件应用的具有面外各向异性的高热稳定性参考结构
公开(公告)号：US09472752B2
公开(公告)日：2016-10-18
申请号：US14493416
申请日：2014-09-23
申请人： Headway Technologies, Inc.
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L43/12 , G11B5/66 , G11C11/15 , H01F10/32 , G11B5/84 , G11B5/39 , G11C11/16 , H01L43/08 , H01L43/10 , G01R33/09 , H01F41/30 , H01L43/02 , H01F10/12
CPC分类号： H01L43/12 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B5/66 , G11B5/84 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/305 , H01L43/02 , H01L43/08 , H01L43/10 , H03B15/006 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143
摘要： Enhanced Hc and Hk in addition to higher thermal stability up to at least 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell for STT-MRAM designs.
摘要翻译：通过在合成反铁磁（SAF）结构中在隔离物的顶表面和底表面上添加除尘层，可以在磁性器件中实现增强的Hc和Hk以及至多400℃的更高的热稳定性，从而得到RL1 / DL1 / 间隔/ DL2 / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。在室温至400℃下沉积除尘层。RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压材料。参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并且增加用于STT-MRAM设计的存储器单元的保留时间。

5. 发明授权

US09478733B2 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications 有权
标题翻译： Co / Ni多层膜，具有改进的磁性器件应用的面外各向异性
公开(公告)号：US09478733B2
公开(公告)日：2016-10-25
申请号：US14529248
申请日：2014-10-31
申请人： Headway Technologies, Inc.
发明人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
IPC分类号： H01L43/02 , H01L43/10 , G01R33/09 , G01R33/12 , H01L43/08 , H01L43/12 , G11B5/127 , G11C11/16 , G11B5/39
CPC分类号： H01L43/10 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B5/3909 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A MTJ for a spintronic device includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：用于自旋电子器件的MTJ包括薄层种子层，其通过（Co / Ni）n组合物或类似物，其中n为2至30，在上层层叠层中增强垂直磁各向异性（PMA）。种子层优选为NiCr ，NiFeCr，Hf或其复合物，其厚度为10至100埃。此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。叠层可以用作MTJ中的自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

6. 发明授权

US09466789B2 Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications 有权
标题翻译：制造具有磁性器件应用的面外各向异性的高热稳定性参考结构的方法
公开(公告)号：US09466789B2
公开(公告)日：2016-10-11
申请号：US14511273
申请日：2014-10-10
申请人： Headway Technologies, Inc.
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L43/12 , G01R33/09 , G11B5/39 , G11B5/66 , G11B5/84 , G11C11/15 , G11C11/16 , H01F10/32 , H01F41/30 , H01L43/02 , H01L43/08 , H01L43/10 , H01F10/12
CPC分类号： H01L43/12 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B5/66 , G11B5/84 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/305 , H01L43/02 , H01L43/08 , H01L43/10 , H03B15/006 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143
摘要： Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. A transition layer such as CoFeB/Co may be formed between the RL2 reference layer and tunnel barrier layer in a bottom spin valve design.
摘要翻译：通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。在室温至400℃下沉积除尘层。RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压材料。参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。可以在底部自旋阀设计中的RL2参考层和隧道势垒层之间形成诸如CoFeB / Co的过渡层。

7. 发明申请

US20160211442A1 Magnetic Tunnel Junction for MRAM Applications 审中-公开
标题翻译： MRAM应用的磁隧道结
公开(公告)号：US20160211442A1
公开(公告)日：2016-07-21
申请号：US14979949
申请日：2015-12-28
申请人： Headway Technologies, Inc.
发明人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
IPC分类号： H01L43/10 , H01L43/08 , G11C11/16 , H01L43/02
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L43/00 , H01L43/02 , H01L43/08
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous layer for improved bit switching performance. According to one embodiment, the amorphous layer has a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. The crystalline layer is Fe, Ni, or FeB with a thickness of at least 6 Angstroms that affords a high magnetoresistive ratio. The M1 and M2 elements in the NiFeM1 and NiFeM2 layers each have a content of 5 to 30 atomic %. The NiFeM1/NiFeM2 configuration substantially reduces bit line switching current and number of shorted bits. In an alternative embodiment, the crystalline layer may be a Fe/NiFe bilayer. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.
摘要翻译：公开了一种MRAM阵列中的MTJ，其具有与隧道势垒和上部非晶层接触的较低结晶层的复合自由层，以改善位切换性能。根据一个实施例，非晶层具有其中M1和M2是Mg，Hf，Zr，Nb或Ta的NiFeM1 / NiFeM2构型，M1不等于M2。结晶层是厚度至少为6埃的Fe，Ni或FeB，具有高的磁阻比。 NiFeM1和NiFeM2层中的M1和M2元素各自具有5至30原子％的含量。 NiFeM1 / NiFeM2配置大大减少了位线切换电流和短路位数。在替代实施例中，结晶层可以是Fe / NiFe双层。在300℃至360℃退火，提供约150％的高磁阻比。

8. 发明授权

US09373778B2 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications 有权
标题翻译： Co / Ni多层膜，具有改进的磁性器件应用的面外各向异性
公开(公告)号：US09373778B2
公开(公告)日：2016-06-21
申请号：US14529251
申请日：2014-10-31
申请人： Headway Technologies, Inc.
发明人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
IPC分类号： H01L43/00 , H01L33/00 , H01L43/10 , G01R33/09 , G01R33/12 , H01L43/08 , H01L43/12 , G11B5/127 , G11C11/16 , H01L43/02 , G11B5/39
CPC分类号： H01L43/10 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B5/3909 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A MTJ for a spintronic device includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a dipole layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：用于自旋电子器件的MTJ包括薄层种子层，其通过（Co / Ni）n组合物或类似物，其中n为2至30，在上层层叠层中增强垂直磁各向异性（PMA）。种子层优选为NiCr ，NiFeCr，Hf或其复合物，其厚度为10至100埃。此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。叠层可以用作MTJ中的偶极子层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

9. 发明申请

US20150061056A1 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications 审中-公开
标题翻译：具有改进的磁性器件应用的平面各向异性的Co / Ni多层
公开(公告)号：US20150061056A1
公开(公告)日：2015-03-05
申请号：US14529248
申请日：2014-10-31
申请人： Headway Technologies, Inc.
发明人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
IPC分类号： H01L43/10 , H01L43/02
CPC分类号： H01L43/10 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B5/3909 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / Ni）n组合物等在上层叠层中提高垂直磁各向异性（PMA），其中n为2至30.种子层优选为NiCr，NiFeCr，Hf，或其复合物，厚度为10〜100埃。此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。叠层可以用作MTJ中的自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

10. 发明申请

US20150056368A1 High Thermal Stability Reference Structure with Out-of-Plane Anisotropy for Magnetic Device Applications 审中-公开
标题翻译：用于磁性器件应用的具有非平面各向异性的高热稳定性参考结构
公开(公告)号：US20150056368A1
公开(公告)日：2015-02-26
申请号：US14511273
申请日：2014-10-10
申请人： Headway Technologies, Inc.
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B5/66 , G11B5/84 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/305 , H01L43/02 , H01L43/08 , H01L43/10 , H03B15/006 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143
摘要： Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. A transition layer such as CoFeB/Co may be formed between the RL2 reference layer and tunnel barrier layer in a bottom spin valve design.
摘要翻译：通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。在室温至400℃下沉积除尘层。RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压材料。参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。可以在底部自旋阀设计中的RL2参考层和隧道势垒层之间形成诸如CoFeB / Co的过渡层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式