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51. 发明授权

US10790117B2 Ion implantation apparatus and measurement device 有权
公开(公告)号：US10790117B2
公开(公告)日：2020-09-29
申请号：US16363678
申请日：2019-03-25
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Yoshiaki Inda
IPC分类号： H01J37/31 , H01J37/244 , H01J37/317
摘要： An ion implantation apparatus includes a first angle measuring instrument configured to measure angle information on an ion beam in a first direction, a second angle measuring instrument configured to measure angle information on the ion beam in a second direction, a relative movement mechanism configured to change relative positions of the first angle measuring instrument and the second angle measuring instrument with respect to the ion beam in a predetermined relative movement direction, and a control device configured to calculate angle information on the ion beam in a third direction perpendicular to both a beam traveling direction and the relative movement direction based on the angle information on the ion beam in the first direction measured by the first angle measuring instrument and the angle information on the ion beam in the second direction measured by the second angle measuring instrument.

52. 发明授权

US10361058B2 Ion generator 有权
公开(公告)号：US10361058B2
公开(公告)日：2019-07-23
申请号：US15912139
申请日：2018-03-05
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Hiroshi Kawaguchi
IPC分类号： H01J37/08 , H01J27/26 , H01J27/08 , H01J27/20 , H01J37/317
摘要： An ion generator includes an arc chamber which has a plasma generating region therein, a cathode configured to emit a thermoelectron toward the plasma generating region, a repeller which faces the cathode in an axial direction in a state where the plasma generating region is interposed between the cathode and the repeller, and a cage which is disposed to partially surround the plasma generating region at a position between an inner surface of the arc chamber and the plasma generating region.

53. 发明授权

US10354835B2 Ion implanter, ion beam irradiated target, and ion implantation method 有权
公开(公告)号：US10354835B2
公开(公告)日：2019-07-16
申请号：US15992862
申请日：2018-05-30
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Hiroshi Matsushita
IPC分类号： H01J37/304 , H01J37/317 , H01J37/08
摘要： An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.

54. 发明授权

US10217607B2 Ion implantation apparatus and ion implantation method 有权
公开(公告)号：US10217607B2
公开(公告)日：2019-02-26
申请号：US15695857
申请日：2017-09-05
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Kazuhisa Ishibashi , Shiro Ninomiya , Akihiro Ochi , Toshio Yumiyama
IPC分类号： H01J37/30 , H01J37/304 , H01J37/317 , H01L21/265
摘要： An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.

55. 发明授权

US10121666B2 Ion implantation method and ion implantation apparatus 有权
公开(公告)号：US10121666B2
公开(公告)日：2018-11-06
申请号：US15374181
申请日：2016-12-09
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Yoji Kawasaki , Makoto Sano , Kazutaka Tsukahara
IPC分类号： H01L21/265 , H01L21/66 , H01J37/317
摘要： An ion implantation method for scanning an ion beam reciprocally in an x direction and moving a wafer reciprocally in a y direction to implant ions into the wafer is provided. The method includes: irradiating a first wafer arranged to meet a predetermined plane channeling condition with the ion beam and measuring resistance of the first wafer irradiated with the ion beam; irradiating a second wafer arranged to meet a predetermined axial channeling condition with the ion beam and measuring resistance of the second wafer irradiated with the ion beam; and adjusting an implant angle distribution of the ion beam by using results of measuring the resistance of the first and second wafers.

56. 发明授权

US10030304B2 Ion implantation apparatus and method of cleaning ion implantation apparatus 有权
公开(公告)号：US10030304B2
公开(公告)日：2018-07-24
申请号：US14219682
申请日：2014-03-19
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takayuki Nagai , Masateru Sato
IPC分类号： H01J37/02 , C23C14/56 , H01J37/08 , H01J37/317 , B08B7/00
摘要： An ion implantation apparatus in which a fluorine compound gas is used as a source gas of an ion source, includes a vacuum chamber into which the source gas is introduced; an introduction passage connected to the vacuum chamber and configured to introduce into the vacuum chamber a cleaning gas containing a component that reacts with the fluorine compound deposited inside the vacuum chamber so as to generate a reactant gas; a delivery device configured to forcibly introduce the cleaning gas into the introduction passage; a first adjustment device configured to adjust an amount of gas flow in the introduction passage; an exhausting passage connected to the vacuum chamber and configured to forcibly exhaust the reactant gas along with the cleaning gas; and a second adjustment device configured to adjust an amount of gas flow in the exhausting passage.

57. 发明授权

US09576771B2 High energy ion implanter, beam current adjuster, and beam current adjustment method 有权
标题翻译：高能离子注入机，束流调节器和束流调节方法
公开(公告)号：US09576771B2
公开(公告)日：2017-02-21
申请号：US14996032
申请日：2016-01-14
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Kouji Inada , Kouji Kato
IPC分类号： H01J37/09 , H01J37/08 , H01J37/304 , H01J37/317 , H01J37/04
CPC分类号： H01J37/304 , H01J37/04 , H01J37/3171 , H01J2237/0455 , H01J2237/08 , H01J2237/24535 , H01J2237/304 , H01J2237/30472 , H01J2237/31701
摘要： A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.
摘要翻译：用于离子注入机的束流调节器包括设置在离子束聚焦点或其附近的可变孔径装置。可变孔径装置被配置为在焦点处调整垂直于离子束聚焦方向的方向上的离子束宽度，以便控制注入束电流。可变孔径装置可以紧靠质量分析狭缝的下游设置。束电流调节器可以设置有包括高能多级线性加速单元的高能离子注入机。

58. 发明授权

US09431214B2 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US09431214B2
公开(公告)日：2016-08-30
申请号：US14721688
申请日：2015-05-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Takanori Yagita
IPC分类号： H01J37/00 , H01J37/317 , H01J37/30 , H01J37/147
CPC分类号： H01J37/3171 , H01J37/1477 , H01J37/30 , H01J37/3007 , H01J37/317 , H01J2237/15 , H01J2237/1534 , H01J2237/303 , H01J2237/31701
摘要： An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.
摘要翻译：离子注入装置包括扫描单元，扫描单元包括扫描电极装置，其允许偏转电场作用在沿着参考轨迹入射的离子束并沿水平方向扫描离子束，并且提供上游电极装置扫描电极装置的上游。扫描电极装置包括一对沿水平方向相对设置的扫描电极，其间插入有基准轨迹，并且一对光束传输校正电极被设置为在垂直于水平方向的垂直方向上彼此面对，具有参考插入其间的轨迹。一对光束传输校正电极中的每一个包括在扫描电极器件的入口附近沿垂直方向向基准轨迹突出的光束传输校正入口电极体。

59. 发明授权

US09412561B2 Ion implantation method and ion implantation apparatus 有权
标题翻译：离子注入法和离子注入装置
公开(公告)号：US09412561B2
公开(公告)日：2016-08-09
申请号：US14696060
申请日：2015-04-24
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takeshi Kurose , Noriyasu Ido , Hiroyuki Kariya
IPC分类号： G01R31/26 , H01J37/304 , H01J37/30 , H01J37/317
CPC分类号： H01J37/304 , H01J37/3002 , H01J37/3171 , H01J2237/24514 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.
摘要翻译：离子注入装置包括光束扫描器，能够测量晶片位置处的光束扫描方向上的离子照射量分布的光束测量单元，以及向束扫描器输出控制波形以扫描离子的控制单元光束。所述控制单元包括输出单元，其将参考控制波形输出到所述波束扫描器;获取单元，其从波束测量单元获取基于所述参考控制波形扫描的离子束测量的离子辐射量分布;以及生成单元其通过使用获取的离子照射量分布来生成校正控制波形。控制单元输出校正控制波形，使得离子照射量分布成为目标分布，并且每单位时间的离子照射量分布成为目标值。

60. 发明授权

US09390890B2 High-energy ion implanter 有权
标题翻译：高能离子注入机
公开(公告)号：US09390890B2
公开(公告)日：2016-07-12
申请号：US14290406
申请日：2014-05-29
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Mitsuaki Kabasawa , Kazuhiro Watanabe , Haruka Sasaki , Kouji Inada
IPC分类号： H01J37/317 , H05H7/04 , H05H9/04
CPC分类号： H01J37/3171 , H01J2237/1518 , H05H7/04 , H05H9/045 , H05H2007/046
摘要： A high-energy ion implanter includes a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam, a deflection unit that changes the direction of the high-energy ion beam toward a semiconductor wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy electric field type beam collimator, and a high-energy electric field type final energy filter.
摘要翻译：高能离子注入机包括加速离子束以产生高能离子束的高能多级线性加速单元，将高能离子束朝向半导体的方向改变的偏转单元晶片和将偏转的高能离子束传送到晶片的光束传输单元。光束传输单元包括光束整形器，高能束扫描器，高能电场型光束准直仪和高能电场型最终能量滤光器。

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