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1. 发明授权

US11581163B2 Ion implanter and ion implantation method 有权
公开(公告)号：US11581163B2
公开(公告)日：2023-02-14
申请号：US16930902
申请日：2020-07-16
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Hiroyuki Kariya , Yuuji Takahashi
IPC分类号： H01J37/304 , C23C14/48 , H01J37/317
摘要： An ion implanter includes an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, a first Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a preparation process performed before the implantation process, a second Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a calibration process for calibrating a beam current measurement value of the first Faraday cup, and a blockade member for blocking the ion beam directed toward the second Faraday cup, the blockade member being configured so that the ion beam is not incident into the second Faraday cup during the implantation process and the preparation process, and the ion beam is incident into the second Faraday cup during the calibration process.

2. 发明授权

US09984851B2 Ion implanter, magnetic field measurement device, and ion implantation method 有权
公开(公告)号：US09984851B2
公开(公告)日：2018-05-29
申请号：US14463041
申请日：2014-08-19
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroyuki Kariya
IPC分类号： H01J37/317 , H01J37/147 , H01J37/24 , G01R33/07
CPC分类号： H01J37/243 , G01R33/07 , G01R33/072 , H01J37/05 , H01J37/147 , H01J37/3171 , H01J2237/055 , H01J2237/057 , H01J2237/152 , H01J2237/24514 , H01J2237/248 , H01J2237/3045
摘要： An ion implanter includes an energy analyzer electromagnet provided between an ion source and a processing chamber. The energy analyzer electromagnet includes a Hall probe configured to generate a measurement output in response to a deflecting magnetic field and an NMR probe configured to generate an NMR output. A control unit of the ion implanter includes a magnetic field measurement unit configured to measure the deflecting magnetic field in accordance with a known correspondence between the deflecting magnetic field and the measurement output, a magnetic field determination unit configured to determine the deflecting magnetic field from the NMR output, and a Hall probe calibration unit configured to update the known correspondence by using the deflecting magnetic field determined from the NMR output and a new measurement output of the Hall probe corresponding to the determined deflecting magnetic field.

3. 发明申请

US20150311077A1 ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS 有权
标题翻译：离子植入方法和离子植入装置
公开(公告)号：US20150311077A1
公开(公告)日：2015-10-29
申请号：US14696060
申请日：2015-04-24
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takeshi Kurose , Noriyasu Ido , Hiroyuki Kariya
IPC分类号： H01L21/265 , H01L21/66 , H01J37/304 , H01J37/30 , H01J37/317
CPC分类号： H01J37/304 , H01J37/3002 , H01J37/3171 , H01J2237/24514 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.
摘要翻译：离子注入装置包括光束扫描器，能够测量晶片位置处的光束扫描方向上的离子照射量分布的光束测量单元，以及向束扫描器输出控制波形以扫描离子的控制单元光束。所述控制单元包括输出单元，其将参考控制波形输出到所述波束扫描器;获取单元，其从波束测量单元获取基于所述参考控制波形扫描的离子束测量的离子辐射量分布;以及生成单元其通过使用获取的离子照射量分布来生成校正控制波形。控制单元输出校正控制波形，使得离子照射量分布成为目标分布，并且每单位时间的离子照射量分布成为目标值。

4. 发明授权

US10825654B2 Ion implantation apparatus and measurement device 有权
公开(公告)号：US10825654B2
公开(公告)日：2020-11-03
申请号：US16270236
申请日：2019-02-07
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Noriyasu Ido , Hiroyuki Kariya , Masahide Ooura
IPC分类号： H01J37/317 , H01J37/304 , H01J37/02 , H01J37/244 , H01J37/147
摘要： A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.

5. 发明授权

US10283422B2 Ion implantation method and ion implantation apparatus 有权
公开(公告)号：US10283422B2
公开(公告)日：2019-05-07
申请号：US15816838
申请日：2017-11-17
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Hiroyuki Kariya , Hideki Morikawa , Masaki Ishikawa
IPC分类号： H01L21/00 , H01L21/66 , H01J37/08 , H01J37/147 , H01J37/244 , H01J37/317 , H01L21/265
摘要： An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.

6. 发明授权

US09343263B2 Ion implanter, beam energy measuring device, and method of measuring beam energy 有权
标题翻译：离子注入机，光束能量测量装置和测量光束能量的方法
公开(公告)号：US09343263B2
公开(公告)日：2016-05-17
申请号：US14656132
申请日：2015-03-12
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Haruka Sasaki , Kazuhiro Watanabe , Hiroyuki Kariya
IPC分类号： H01J37/00 , H01J37/244 , H01J37/317
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/057 , H01J2237/24514 , H01J2237/24528 , H01J2237/31703
摘要： A beam energy measuring device in an ion implanter includes a parallelism measuring unit that measures a parallelism of an ion beam at a downstream of a beam collimator of the ion implanter and an energy calculating unit that calculates an energy of the ion beam from the measured parallelism. The ion implanter may further include a control unit that controls a high energy multistage linear acceleration unit based on the measured energy of the ion beam so that the ion beam has a target energy.
摘要翻译：离子注入机中的光束能量测量装置包括平行度测量单元，其测量在离子注入机的光束准直器的下游处的离子束的平行度，以及能量计算单元，其计算来自所测量的平行度的离子束的能量。离子注入机还可以包括控制单元，其基于所测量的离子束的能量来控制高能量多级线性加速单元，使得离子束具有目标能量。

7. 发明申请

US20210020401A1 ION IMPLANTER AND ION IMPLANTATION METHOD 有权
公开(公告)号：US20210020401A1
公开(公告)日：2021-01-21
申请号：US16930902
申请日：2020-07-16
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Hiroyuki Kariya , Yuuji Takahashi
IPC分类号： H01J37/304 , H01J37/317 , C23C14/48
摘要： An ion implanter includes an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, a first Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a preparation process performed before the implantation process, a second Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a calibration process for calibrating a beam current measurement value of the first Faraday cup, and a blockade member for blocking the ion beam directed toward the second Faraday cup, the blockade member being configured so that the ion beam is not incident into the second Faraday cup during the implantation process and the preparation process, and the ion beam is incident into the second Faraday cup during the calibration process.

8. 发明申请

US20190244785A1 ION IMPLANTATION APPARATUS AND MEASUREMENT DEVICE 审中-公开
公开(公告)号：US20190244785A1
公开(公告)日：2019-08-08
申请号：US16270236
申请日：2019-02-07
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Noriyasu Ido , Hiroyuki Kariya , Masahide Ooura
IPC分类号： H01J37/317 , H01J37/304 , H01J37/02 , H01J37/147 , H01J37/244
摘要： A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.

9. 发明申请

US20180145000A1 ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS 审中-公开
公开(公告)号：US20180145000A1
公开(公告)日：2018-05-24
申请号：US15816838
申请日：2017-11-17
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Hiroyuki Kariya , Hideki Morikawa , Masaki Ishikawa
IPC分类号： H01L21/66 , H01L21/265 , H01J37/317 , H01J37/08 , H01J37/244 , H01J37/147
CPC分类号： H01L22/26 , H01J37/08 , H01J37/1474 , H01J37/244 , H01J37/3171 , H01J2237/152 , H01J2237/2448 , H01J2237/24585 , H01J2237/31701 , H01L21/265
摘要： An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.

10. 发明授权

US09412561B2 Ion implantation method and ion implantation apparatus 有权
标题翻译：离子注入法和离子注入装置
公开(公告)号：US09412561B2
公开(公告)日：2016-08-09
申请号：US14696060
申请日：2015-04-24
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takeshi Kurose , Noriyasu Ido , Hiroyuki Kariya
IPC分类号： G01R31/26 , H01J37/304 , H01J37/30 , H01J37/317
CPC分类号： H01J37/304 , H01J37/3002 , H01J37/3171 , H01J2237/24514 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.
摘要翻译：离子注入装置包括光束扫描器，能够测量晶片位置处的光束扫描方向上的离子照射量分布的光束测量单元，以及向束扫描器输出控制波形以扫描离子的控制单元光束。所述控制单元包括输出单元，其将参考控制波形输出到所述波束扫描器;获取单元，其从波束测量单元获取基于所述参考控制波形扫描的离子束测量的离子辐射量分布;以及生成单元其通过使用获取的离子照射量分布来生成校正控制波形。控制单元输出校正控制波形，使得离子照射量分布成为目标分布，并且每单位时间的离子照射量分布成为目标值。

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