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51. 发明申请

US20080001790A1 Method and system for enhancing data compression 审中-公开
标题翻译：用于增强数据压缩的方法和系统
公开(公告)号：US20080001790A1
公开(公告)日：2008-01-03
申请号：US11479389
申请日：2006-06-30
申请人： Kyle Kirby , Bill J. Kirby
发明人： Kyle Kirby , Bill J. Kirby
IPC分类号： H03M7/00
CPC分类号： H03M7/30
摘要： A method and system are disclosed for enhancing the compression of a broad range of computer files through the use of a novel search-and-replace data transform process. The process involves reading an input file, converting each pair of binary bits of the input data into quarternary numeral bytes, searching the quarternary numeralized data for successive incrementing pilot strings, replacing each pilot string with the same proxy value, and outputting the proxy-substituted data to a data compression engine.
摘要翻译：公开了一种通过使用新颖的搜索和替换数据变换过程来增强对范围广泛的计算机文件的压缩的方法和系统。该过程涉及读取输入文件，将输入数据的每对二进制位转换为三进制数字字节，搜索季后数字化数据以连续递增导频字符串，用相同代理值代替每个导频字符串，并输出代理代替数据到数据压缩引擎。

52. 发明申请

US20070184654A1 Methods for fabricating and filling conductive vias and conductive vias so formed 有权
标题翻译：制造和填充如此形成的导电通孔和导电通孔的方法
公开(公告)号：US20070184654A1
公开(公告)日：2007-08-09
申请号：US11347153
申请日：2006-02-03
申请人： Salman Akram , William Hiatt , Steve Oliver , Alan Wood , Sidney Rigg , James Wark , Kyle Kirby
发明人： Salman Akram , William Hiatt , Steve Oliver , Alan Wood , Sidney Rigg , James Wark , Kyle Kirby
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/05001 , H01L2224/05009 , H01L2224/05568 , H01L2224/13009 , H01L2224/13025 , H01L2224/16 , H01L2224/16145 , H01L2224/17181 , H01L2924/09701
摘要： Methods for forming conductive vias include forming one or more via holes in a substrate. The via holes may be formed with a single mask, with the protective layers, bond pads, or other features of the substrate acting as hard masks in the event that a photomask is removed during etching processes. The via holes may be configured to facilitate adhesion of a dielectric coating that includes a low-K dielectric material to the surfaces thereof. A barrier layer may be formed over surfaces of each via hole. A base layer, which may comprise a seed material, may be formed to facilitate the subsequent, selective deposition of conductive material over the surfaces of the via hole. The resulting semiconductor devices, intermediate structures, and assemblies and electronic devices that include the semiconductor devices that result from these methods are also disclosed.
摘要翻译：用于形成导电通孔的方法包括在衬底中形成一个或多个通孔。通孔可以用单个掩模形成，在蚀刻过程中去除光掩模的情况下，衬底的保护层，接合焊盘或其他特征用作硬掩模。通孔可以被配置为便于将包括低K电介质材料的电介质涂层粘附到其表面上。可以在每个通孔的表面上形成阻挡层。可以形成可以包括种子材料的基层，以便于导电材料随后的选择性沉积在通孔的表面上。还公开了包括由这些方法产生的半导体器件的所得半导体器件，中间结构和组件以及电子器件。

53. 发明申请

US20070170350A1 Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers 有权
公开(公告)号：US20070170350A1
公开(公告)日：2007-07-26
申请号：US11727545
申请日：2007-03-27
申请人： Warren Farnworth , Sidney Rigg , William Hiatt , Alan Wood , Peter Benson , James Wark , David Hembree , Kyle Kirby , Charles Watkins , Salman Akram
发明人： Warren Farnworth , Sidney Rigg , William Hiatt , Alan Wood , Peter Benson , James Wark , David Hembree , Kyle Kirby , Charles Watkins , Salman Akram
IPC分类号： H01L27/00
CPC分类号： H01L27/00 , B33Y80/00 , H01L27/14618 , H01L27/14625 , H01L27/14683 , H01L27/14687 , H01L2224/48091 , H01L2224/48227 , H01L2924/01077 , H01L2924/01078 , H01L2924/00014
摘要： Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.

54. 发明申请

US20070141835A1 Methods of fabricating interconnects for semiconductor components 有权
标题翻译：制造半导体元件互连的方法
公开(公告)号：US20070141835A1
公开(公告)日：2007-06-21
申请号：US11705897
申请日：2007-02-13
申请人： Kyle Kirby , Shuang Meng , Garo Derderian
发明人： Kyle Kirby , Shuang Meng , Garo Derderian
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： C23C16/34 , C23C16/45525 , C23C18/1608 , C23C18/1879 , C23C18/36 , H01L21/28562 , H01L21/288 , H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L2224/0231 , H01L2224/02372 , H01L2224/03002 , H01L2224/0401 , H01L2224/13009 , H01L2224/13024 , H01L2224/13099 , H01L2224/13111 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/12042 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.
摘要翻译：一方面，本发明包括制造用于半导体部件的互连的方法。提供半导体衬底，并且形成完全贯穿衬底的开口。第一种材料在小于或等于约200℃的温度下沿着开口的侧壁沉积。沉积可以包括原子层沉积和化学气相沉积中的一个或两个，并且第一材料可以包括金属氮化物。在第一材料的表面上形成焊料润湿材料。焊料润湿材料可以包括例如镍。随后，在开口内和焊料润湿材料之上提供焊料。

55. 发明申请

US20070036932A1 Methods for releasably attaching support members to microfeature workpieces and microfeature assemblies formed using such methods 有权
标题翻译：用于将支撑构件可释放地附接到微型工件和使用这种方法形成的微特征组件的方法
公开(公告)号：US20070036932A1
公开(公告)日：2007-02-15
申请号：US11585485
申请日：2006-10-24
申请人： Kyle Kirby , Steven Oliver
发明人： Kyle Kirby , Steven Oliver
IPC分类号： B32B33/00
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2924/3025 , Y10T156/1052 , Y10T156/108 , Y10T428/14 , Y10T428/1414 , Y10T428/1471
摘要： Methods for releasably attaching support members to microfeature workpieces and microfeature assemblies formed using such methods are disclosed herein. A method for processing a microfeature workpiece in accordance with one embodiment includes applying adhesive material to a non-active portion on a first side of a workpiece. The workpiece can include a first active portion and a second active portion separated from each other at least in part by the non-active portion. The method continues by adhesively attaching the first side of the workpiece to a first support member, and releasably attaching the second side of the workpiece to a second support member. The method further includes separating the first active portion from the second active portion while the workpiece is attached to the second support member by cutting through the first support member and the non-active portion of the workpiece. The separation process removes at least approximately all the adhesive material from the non-active portion of the workpiece.
摘要翻译：本文公开了将支撑构件可释放地附接到微特征工件和使用这种方法形成的微特征组件的方法。根据一个实施例的用于处理微特征工件的方法包括将粘合剂材料施加到工件的第一侧上的非活动部分。工件可以包括至少部分地由非活动部分彼此分离的第一有效部分和第二有效部分。该方法通过将工件的第一侧粘合地附接到第一支撑构件并且将工件的第二侧可释放地附接到第二支撑构件来继续。该方法还包括通过切割穿过第一支撑构件和工件的非活动部分而将工件附接到第二支撑构件而将第一活动部分与第二活动部分分离。分离过程至少从工件的非活性部分去除所有的粘合剂材料。

56. 发明申请

US20070004173A1 Semiconductor wafers including one or more reinforcement structures and methods of forming the same 有权
标题翻译：包括一个或多个增强结构的半导体晶片及其形成方法
公开(公告)号：US20070004173A1
公开(公告)日：2007-01-04
申请号：US11516095
申请日：2006-09-05
申请人： Kyle Kirby
发明人： Kyle Kirby
IPC分类号： H01L21/30
CPC分类号： H01L29/0657 , H01L21/02002 , H01L21/02035 , H01L21/304 , H01L21/78 , Y10S438/977
摘要： Methods of forming semiconductor devices include thinning a region of a semiconductor wafer and forming at least one semiconductor die laterally within a thinned region of the wafer. One or more reinforcement structures may be defined on the wafer. Semiconductor wafers include one or more reinforcement structures that extend laterally along the wafer and project from at least one surface of the wafer. The wafers further include a plurality of at least partially formed semiconductor dice laterally within at least one region having a thickness that is less than a thickness of the reinforcement structures. The wafers may include a plurality of at least partially formed semiconductor dice laterally within each of a plurality of thin regions defined between a plurality of reinforcement structures. The thin regions may have an average thickness less than an average thickness of the reinforcement structures.
摘要翻译：形成半导体器件的方法包括使半导体晶片的区域变薄并且在晶片的薄化区域内横向形成至少一个半导体晶片。可以在晶片上限定一个或多个加强结构。半导体晶片包括沿着晶片横向延伸并从晶片的至少一个表面突出的一个或多个加强结构。晶片进一步包括多个至少部分形成的半导体晶片，其至少一个区域内具有小于加强结构厚度的厚度。晶片可以在多个加强结构之间限定的多个薄区域的每一个内横向包括多个至少部分形成的半导体晶片。薄区域可以具有小于加强结构的平均厚度的平均厚度。

57. 发明申请

US20060255316A1 Etch solution for selectively removing silicon 审中-公开
标题翻译：用于选择性去除硅的蚀刻溶液
公开(公告)号：US20060255316A1
公开(公告)日：2006-11-16
申请号：US11489694
申请日：2006-07-19
申请人： Kyle Kirby , Kevin Torek
发明人： Kyle Kirby , Kevin Torek
IPC分类号： C09K13/00 , H01L21/465
CPC分类号： H01L21/30608
摘要： An etch solution that comprises tetramethylammonium hydroxide (“TMAH”) and at least one organic solvent. The etch solution may be substantially free of water. The etch solution is formulated to selectively etch a silicon layer relative to other layers on an integrated circuit. The TMAH may be present in an amount ranging from approximately 1% by weight to approximately 10% by weight. The at least one organic solvent may be selected from the group consisting of isopropanol, butanol, hexanol, phenol, glycol, glycerol, ethylene glycol, propylene glycol, glycerin, and mixtures thereof. A method of selectively etching a silicon layer and a method of removing a heat-affected zone (“HAZ”) on an integrated circuit are also disclosed.
摘要翻译：包含四甲基氢氧化铵（“TMAH”）和至少一种有机溶剂的蚀刻溶液。蚀刻溶液可以基本上不含水。蚀刻溶液被配制为相对于集成电路上的其它层选择性地蚀刻硅层。 TMAH可以以约1重量％至约10重量％的量存在。所述至少一种有机溶剂可选自异丙醇，丁醇，己醇，苯酚，乙二醇，甘油，乙二醇，丙二醇，甘油及其混合物。还公开了一种选择性蚀刻硅层的方法和在集成电路上去除热影响区（“HAZ”）的方法。

58. 发明申请

US20060243889A1 Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers 有权
公开(公告)号：US20060243889A1
公开(公告)日：2006-11-02
申请号：US11476015
申请日：2006-06-28
申请人： Warren Farnworth , Sidney Rigg , William Hiatt , Alan Wood , Peter Benson , James Wark , David Hembree , Kyle Kirby , Charles Watkins , Salman Akram
发明人： Warren Farnworth , Sidney Rigg , William Hiatt , Alan Wood , Peter Benson , James Wark , David Hembree , Kyle Kirby , Charles Watkins , Salman Akram
IPC分类号： H01L27/00
CPC分类号： H01L27/00 , B33Y80/00 , H01L27/14618 , H01L27/14625 , H01L27/14683 , H01L27/14687 , H01L2224/48091 , H01L2224/48227 , H01L2924/01077 , H01L2924/01078 , H01L2924/00014
摘要： Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.

59. 发明申请

US20060242828A1 Fabrication of compliant spring contact structures and use thereof 审中-公开
标题翻译：柔性弹簧接触结构的制造及其用途
公开(公告)号：US20060242828A1
公开(公告)日：2006-11-02
申请号：US11476460
申请日：2006-06-28
申请人： Kyle Kirby , Warren Farnworth
发明人： Kyle Kirby , Warren Farnworth
IPC分类号： H05K1/00
CPC分类号： H01L23/49811 , B33Y80/00 , G01R1/06727 , G01R1/07357 , G01R3/00 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/48 , H01L24/72 , H01L24/81 , H01L2224/13099 , H01L2224/13111 , H01L2224/136 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/8121 , H01L2224/81815 , H01L2224/81903 , H01L2224/83102 , H01L2224/92125 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15787 , H01L2924/16152 , H01L2924/351 , H05K3/4092 , H05K2201/0311 , Y10T29/49204 , Y10T29/49222 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Photolithography patterned spring contacts are disclosed. The spring contacts may be fabricated using thin film processing techniques. A substrate, such as a silicon wafer or a carrier substrate is provided. At least one layer of a metal or alloy film may be deposited on the substrate or on at least one intervening release layer and patterned to form metal traces. A stressable material, exhibiting an at least partially tensile stress state, may be deposited on the metal traces in a localized region. A portion of the substrate or a portion of the intervening release layer underneath the metal traces may be removed by etching, causing the metal traces to curl upward resulting in the spring contacts. The spring contacts may be used as compliant electrical contacts for electrical devices, such as integrated circuits or carrier substrates. The compliant electrical contacts may also be used for probe cards to test other electrical devices.
摘要翻译：公开了光刻图案的弹簧触点。可以使用薄膜处理技术来制造弹簧触点。提供了诸如硅晶片或载体衬底的衬底。至少一层金属或合金膜可以沉积在衬底上或至少一个中间释放层上并且被图案化以形成金属迹线。表现出至少部分拉伸应力状态的可压应材料可以沉积在局部区域的金属迹线上。可以通过蚀刻去除基底的一部分或金属迹线下方的中间释放层的一部分，导致金属迹线向上卷曲，导致弹簧接触。弹簧触点可以用作电气装置的柔性电触点，例如集成电路或载体基板。兼容的电触点也可用于探针卡以测试其他电气设备。

60. 发明申请

US20060205211A1 Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods 有权
公开(公告)号：US20060205211A1
公开(公告)日：2006-09-14
申请号：US11418170
申请日：2006-05-04
申请人： Kyle Kirby
发明人： Kyle Kirby
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2224/0557 , H01L2224/32145 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2224/05552
摘要： Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces having such interconnects are disclosed herein. One aspect of the invention is directed toward a method for manufacturing a microelectronic workpiece having a plurality of microelectronic dies. The individual dies include an integrated circuit and a terminal electrically coupled to the integrated circuit. In one embodiment, the method includes forming an opening in the workpiece in alignment with the terminal. The opening can be a through-hole extending through the workpiece or a blind hole that extends only partially through the substrate. The method continues by constructing an electrically conductive interconnect in the workpiece by depositing a solder material into at least a portion of the opening and in electrical contact with the terminal. In embodiments that include forming a blind hole, the workpiece can be thinned either before or after forming the hole.

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