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51. 发明授权

US4690725A Purification of Cd and Te by zone refining 失效
标题翻译：通过区域精炼纯化Cd和Te
公开(公告)号：US4690725A
公开(公告)日：1987-09-01
申请号：US800932
申请日：1985-11-22
申请人： Roelof P. Bult , Alan B. I. Bollong , Robert F. Redden
发明人： Roelof P. Bult , Alan B. I. Bollong , Robert F. Redden
IPC分类号： C01B19/00 , C01B19/02 , C22B9/02 , C22B17/06 , C22B61/00 , C30B13/00 , C30B29/02 , C30B13/02 , C30B13/08
CPC分类号： C01B19/02 , C01B19/002 , C22B17/06 , C22B9/02 , C30B13/00 , C30B29/02 , C01P2002/80 , C01P2002/89 , Y02P10/234
摘要： Cd and Te are purified by multiple-pass zone refining in the presence of a small amount of an added gettering substance chosen from Cd, Te and CdTe. In the purification of Cd, Te, or CdTe is added, the amount of Te or of Te in CdTe being less than the amount of Te in the Cd-rich eutectic composition between Cd and Te. In the purification of Te, Cd or CdTe is added, the amount of Cd or of Cd in CdTe being less than the amount of Cd in the Te-rich eutectic composition between Cd and Te. The Cd and Te so purified have an improved purity as witnessed by SSMS analyses, the increased ductility of the Cd and a much higher yield of the number of slices of CdHgTe produced with the refined Cd and Te meeting the specifications for carrier concentration and mobility.
摘要翻译： Cd和Te在少量添加的选自Cd，Te和CdTe的吸气物质的存在下，通过多通道精制进行纯化。在Cd，Te或CdTe的纯化中，CdTe中的Te或Te的量小于Cd和Te之间的富含Cd的共晶组成中的Te量。在Te的纯化中，添加Cd或CdTe，CdTe中的Cd或Cd的量小于Cd和Te之间的富含Te的共晶组成中的Cd的量。如此纯化的Cd和Te具有改进的纯度，如通过SSMS分析所证明的，Cd的延展性增加，并且用精炼的Cd和Te产生的Cd HgTe切片数量高得多，满足载流子浓度和迁移率的规格。

52. 发明授权

US4670086A Process for the growth of structures based on group IV semiconductor materials 失效
标题翻译：基于IV族半导体材料的结构生长工艺
公开(公告)号：US4670086A
公开(公告)日：1987-06-02
申请号：US744889
申请日：1985-06-14
申请人： Harry J. Leamy
发明人： Harry J. Leamy
IPC分类号： C30B1/02 , C30B13/00 , C30B13/34 , C30B1/08
CPC分类号： C30B13/34 , C30B1/026 , C30B13/00 , C30B29/60
摘要： Single crystal layers of Group IV semiconductor materials, such as silicon, are grown on insulating substrates. The fabrication of this structure is achieved by forming on a single crystal substrate a layer of an insulating material, such as a silicon oxide. A small via hole is produced in the insulating layer to leave a portion of the underlying substrate uncovered. A precursor material is deposited on the insulating layer so that it covers at least a portion of the insulating layer and also contacts the substrate at the via hole. The precursor layer is then formed into a single crystal by inducing growth on the substrate at the via hole and propagating this growth through the precursor layer.
摘要翻译： IV族半导体材料（如硅）的单晶层生长在绝缘基板上。该结构的制造通过在单晶衬底上形成诸如氧化硅等绝缘材料的层来实现。在绝缘层中产生小的通孔，以使未覆盖的底层衬底的一部分。前体材料沉积在绝缘层上，使得其覆盖绝缘层的至少一部分并且还在通孔处接触基板。然后通过在通孔处诱导基底上的生长并将该生长传播通过前体层，将前体层形成为单晶。

53. 发明授权

US4623423A Process for producing a strain-free monocrystal of a crystalline ferroelectric compound 失效
标题翻译：制备结晶铁电化合物的无应变单晶的方法
公开(公告)号：US4623423A
公开(公告)日：1986-11-18
申请号：US489416
申请日：1983-04-28
申请人： Jean-Jacques Aubert , Bernard Bechevet , Jacques Daval
发明人： Jean-Jacques Aubert , Bernard Bechevet , Jacques Daval
IPC分类号： C30B13/00 , C30B15/00 , C30B15/14 , C30B29/30 , C30B33/00 , C30B33/02 , H01B3/00 , C30B1/02
CPC分类号： C30B15/00 , C30B13/00 , C30B15/14 , C30B29/30 , C30B33/00 , Y10S117/918 , Y10T117/1016 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： The process involves producing a monocrystal from the ferroelectric compound, annealing the monocrystal and cooling the latter in a zero longitudinal temperature gradient. The apparatus comprises means for producing the monocrystal and heating means for annealing the monocrystal in a zero temperature gradient, as well as for cooling the monocrystal in a zero longitudinal temperature gradient after annealing. The strain-free monocrystals may be used in the production of surface wave filters, modulators and optical amplifiers.
摘要翻译：该方法包括从铁电化合物制备单晶，退火单晶并在零纵向温度梯度下冷却单晶。该装置包括用于制造用于在零温度梯度退火单晶的单晶和加热装置的装置，以及用于在退火之后的零纵向温度梯度中冷却单晶。无应变单晶可用于生产表面波滤波器，调制器和光放大器。

54. 发明授权

US4606846A Mixed rare earth metal, divalent transition metal, aluminum oxide 失效
标题翻译：混合稀土金属，二价过渡金属，氧化铝
公开(公告)号：US4606846A
公开(公告)日：1986-08-19
申请号：US491410
申请日：1983-05-04
申请人： Andree Kahn , Anne-Marie Lejus , Jeanine Thery , Daniel Vivien
发明人： Andree Kahn , Anne-Marie Lejus , Jeanine Thery , Daniel Vivien
IPC分类号： C01G1/00 , C01F17/00 , C01G37/00 , C01G45/00 , C01G49/00 , C01G51/00 , C01G53/00 , C04B35/44 , C04B35/50 , C09K11/80 , C30B11/00 , C30B13/00 , C30B15/00 , C30B29/22 , H01S3/16 , C09K11/08
CPC分类号： C30B29/22 , C01F17/0025 , C01G33/006 , C01G37/006 , C01G45/006 , C01G49/009 , C01G51/006 , C01G53/006 , C04B35/44 , C04B35/50 , C30B11/00 , C30B13/00 , C30B15/00 , H01S3/1688 , C01P2002/54 , C01P2002/84 , C01P2006/40
摘要： A mixed aluminum oxide having the following formula:X.sup.1.sub.(x.sbsb.1.sub.-x.sbsb.2.sub.) X.sup.2.sub.(x.sbsb.2.sub.) M.sup.1.sub.(y.sbsb.1.sub.-y.sbsb.2.sub.) M.sup.2.sub.(y.sbsb.2.sub.) Al.sub.(z.sbsb.1.sub.-z.sbsb.2.sub.) M.sup.3.sub.(z.sbsb.2.sub.) O.sub.19wherein X.sup.1 and X.sup.2, which can be the same or different, represent a metal selected from the group consisting of lanthanum, praseodymium, neodymium, samarium and gadolinium, provided that X.sup.1 and X.sup.2 are different when X.sup.1 or X.sup.2 represents lanthanum or gadolinium; M.sup.1 and M.sup.2, which can be the same or different, each represent a metal selected from the group consisting of magnesium and divalent transition metals; M.sup.3 represents a trivalent transition metal; x.sub.1 represents a number from 0.8 to 1; y.sub.1 represents a number from 0.7 to 1; z.sub.1 represents a number from 10 to 12; x.sub.2 represents a number from 0 to x.sub.1 ; y.sub.2 represents a number from 0 to y.sub.1 ; and z.sub.2 represents a number from 0 to 1; and wherein said mixed aluminum oxide has a single phase crystalline structure of the magnetoplumbite type. A process for producing the mixed oxide is also disclosed, as well as its applications to power lasers emitting in the infrared and to telecommunications by optical fibers.
摘要翻译：具有下式的混合氧化铝：X1（x1-x2）X2（x2）M1（y1-y2）M2（y2）Al（z1-z2）M3（z2）O19其中X1和X2可以相同或不同的，表示选自镧，镨，钕，钐和钆的金属，条件是X1和X2在X1或X2表示镧或钆时是不同的; M1和M2可以相同或不同，各自表示选自镁和二价过渡金属的金属; M3表示三价过渡金属; x1表示从0.8到1的数字; y1表示0.7〜1的数; z1表示10〜12的数; x2表示从0到x1的数字; y2表示从0到y1的数字; z2表示0〜1的数; 并且其中所述混合氧化铝具有磁铅矿型的单相晶体结构。还公开了制造混合氧化物的方法，以及其用于对通过光纤发射在红外线和电信中的激光器的功率的应用。

55. 发明授权

US4602980A Method for improving crystallinity of semiconductor ribbon 失效
标题翻译：改善半导体带状结晶度的方法
公开(公告)号：US4602980A
公开(公告)日：1986-07-29
申请号：US656390
申请日：1984-10-01
申请人： Ralph J. Ellis , Ronald N. Legge , Israel A. Lesk
发明人： Ralph J. Ellis , Ronald N. Legge , Israel A. Lesk
IPC分类号： H01L21/18 , C30B13/00 , C30B13/22 , C30B13/24 , C30B29/64 , H01L31/04
CPC分类号： C30B13/005 , C30B13/24 , Y10S117/904 , Y10S117/905 , Y10T117/1088
摘要： A method is disclosed for improving the crystallinity of semiconductor ribbon material while increasing the material throughput and decreasing energy requirements. The crystallinity of a ribbon of semiconductor material can be improved by forming a localized molten zone in the material and sweeping this molten zone along the length of the material. As the molten zone refreezes, the material is locally recrystallized with enhanced grain size. In accordance with the invention, two ribbons are positioned back-to-back with a slight spacing between the ribbons. Energy sources are focused on the outer surfaces of the two ribbons to create a molten zone in each of the ribbons. Because of the close proximity between the ribbons, much of the energy reradiated from each molten zone is absorbed by the adjacent ribbon. The molten zones are then swept along both of the ribbons to simultaneously cause crystal improvement in both ribbons. The total energy input required for recrystallizing two ribbons is only slightly greater than the energy required to recrystallize one ribbon. Further improvements in the process are achieved by positioning a thermal diffuser between the two ribbons and/or staggering the relative positions of the molten zones.
摘要翻译：公开了一种用于提高半导体带状材料的结晶度同时增加材料通过量并降低能量需求的方法。半导体材料带的结晶度可以通过在材料中形成局部熔融区域并沿着材料的长度扫过该熔融区域来改善。随着熔融区的重熔，材料会随着晶粒尺寸的增加而局部再结晶。根据本发明，两条带之间以较小的间距背靠背设置。能量源集中在两个带的外表面上以在每个带中形成熔融区。由于带之间的紧密接近，从每个熔融区域重新辐射的大部分能量被相邻的带吸收。然后将熔融区域沿着两条带扫过，以同时在两条带上引起晶体改善。重结晶两个带所需的总能量输入仅略微大于重结晶一个色带所需的能量。通过将热扩散器定位在两个带之间和/或交错熔融区的相对位置来实现该过程的进一步改进。

56. 发明授权

US4576676A Thick crystalline films on foreign substrates 失效
标题翻译：外来底物上的厚结晶膜
公开(公告)号：US4576676A
公开(公告)日：1986-03-18
申请号：US497620
申请日：1983-05-24
申请人： Henry I. Smith , Harry A. Atwater , Michael W. Geis
发明人： Henry I. Smith , Harry A. Atwater , Michael W. Geis
IPC分类号： C30B13/00 , C30B13/34 , C30B1/08
CPC分类号： C30B13/34 , C30B13/00 , C30B29/64 , Y10S438/973
摘要： To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (
摘要翻译：为了在异质基底上的厚（>1μm）膜中获得均匀的纹理，大的晶粒或在一些情况下为单晶取向，形成薄（<1μm）某一部分。区域熔融重结晶在薄部分开始，然后延伸到厚部分。该方法可以采用取向滤波器图案的平面收缩图案。

57. 发明授权

US4565599A Graphoepitaxy by encapsulation 失效
标题翻译： Graphoepitaxy通过封装
公开(公告)号：US4565599A
公开(公告)日：1986-01-21
申请号：US680237
申请日：1984-12-10
申请人： Michael W. Geis , Henry I. Smith , Dimitri A. Antoniadis , Dale C. Flanders
发明人： Michael W. Geis , Henry I. Smith , Dimitri A. Antoniadis , Dale C. Flanders
IPC分类号： C30B1/02 , C30B13/00 , C30B13/34 , H01L21/20 , C30B1/08
CPC分类号： H01L21/2022 , C30B1/02 , C30B13/00 , C30B13/34 , C30B29/64 , Y10S117/913 , Y10S148/152
摘要： Improvements on the graphoepitaxial process for obtaining epitaxial or preferred orientation films are described wherein a cap of material is formed over the film to be oriented, artificial surface-relief structure may be present in the substrate, the cap, or both, and the film may be heated by irradiation with electromagnetic radiation.
摘要翻译：描述了用于获得外延或优选取向膜的图案外延工艺的改进，其中在要取向的膜上形成材料盖，人造表面浮雕结构可存在于基板，盖或两者中，并且膜可以用电磁辐射照射加热。

58. 发明授权

US4562106A Product made by method of entraining dislocations and other crystalline defects 失效
标题翻译：通过夹带位错和其他结晶缺陷的方法制成的产品
公开(公告)号：US4562106A
公开(公告)日：1985-12-31
申请号：US617311
申请日：1984-06-04
申请人： Michael W. Geis , Henry I. Smith
发明人： Michael W. Geis , Henry I. Smith
IPC分类号： C30B13/00 , C30B13/28 , C30B27/00 , B32B33/00
CPC分类号： C30B27/00 , C30B13/00 , C30B13/28 , C30B29/60 , Y10S148/06 , Y10T428/24802
摘要： A substrate, such as a film of thermally grown silicon dioxide on a silicon wafer is coated with a thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish dislocation and crystalline defects in the film entrained to follow the pattern of the stripes at locations related to the stripes.
摘要翻译：诸如硅晶片上的热生长二氧化硅的薄膜的衬底涂覆有通过化学气相沉积沉积的厚度范围为0.05-10μm的多晶或非晶硅薄膜。作为2μm厚的SiO 2，30nm的Si 3 N 4的复合体的封装层沉积在薄膜上。在由诸如钛，硅，二氧化硅和光致抗蚀剂的材料制成的该封装层上形成条纹图案。在膜中产生长而窄的熔融区，其长轴垂直于线，并且在可再循环过程中与可行的带状加热器在平行于线的方向上移动，以在膜中形成位错和晶体缺陷夹带在与条纹相关的位置跟随条纹图案。

59. 发明授权

US4523962A Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor 失效
标题翻译：通过使用设置在聚/非晶半导体上的防反射涂层的栅格通过激光结晶在绝缘层上制造单晶半导体层的方法
公开(公告)号：US4523962A
公开(公告)日：1985-06-18
申请号：US561104
申请日：1983-12-13
申请人： Tadashi Nishimura
发明人： Tadashi Nishimura
IPC分类号： C30B13/00 , C30B13/24 , C30B13/34 , H01L21/20 , H01L21/263 , B05D3/06
CPC分类号： C30B13/34 , C30B13/00 , C30B13/24 , C30B29/60 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02683 , H01L21/02691 , Y10S117/904 , Y10S148/091
摘要： A method for fabricating a monocrystalline semiconductor layer on an insulating layer in the production of a semiconductor device wherein the location of grain boundaries is accurately controlled, thereby making the crystal orientation of the monocrystalline semiconductor layer uniform over a large area. An antireflection layer is formed above a polycrystalline of amorphous semiconductor layer formed on a main face of a monocrystalline semiconductor substrate which contacts the monocrystalline semiconductor substrate through windows formed in a thick insulating layer. The antireflection layer includes a first portion which covers all of the area of the polycrystalline or amorphous semiconductor layer above the windows, and a second portion, which has the form of a grid composed of parallel lines extending from the first portion in the direction of the crystallographic axis of the monocrystalline semiconductor substrate and partially covering a second area between the first areas. A laser beam is scanned from the first portions of the antireflection layer above the windows in directions parallel to the lines of the grid of the antireflection layer.
摘要翻译：在半导体器件的制造中在绝缘层上制造单晶半导体层的方法，其中晶界的位置被精确地控制，从而使单晶半导体层的晶体取向在大面积上均匀。在通过形成在厚绝缘层中的窗口与单晶半导体衬底接触的单晶半导体衬底的主面上形成的非晶半导体层的多晶上方形成抗反射层。抗反射层包括覆盖窗户上方的多晶或非晶半导体层的全部区域的第一部分和第二部分，该第二部分具有网格的形式，该网格由平行线组成，该平行线从第一部分沿着单晶半导体衬底的晶轴并且部分覆盖第一区域之间的第二区域。从窗口上方的防反射层的第一部分扫描激光束，方向平行于抗反射层的栅格线。

60. 发明授权

US4465546A Method of growing polycrystalline and monocrystalline bodies of volatile 2,6 and 3,5 compounds in graphite crucibles by self-sealing and self-releasing techniques 失效
标题翻译：通过自密封和自动释放技术在石墨坩埚中生长挥发性2,6和3,5化合物的多晶和单晶体的方法
公开(公告)号：US4465546A
公开(公告)日：1984-08-14
申请号：US413929
申请日：1982-09-01
申请人： Brian J. Fitzpatrick , Thomas F. McGee, III
发明人： Brian J. Fitzpatrick , Thomas F. McGee, III
IPC分类号： C01G9/08 , C01B17/20 , C01B19/04 , C01B25/08 , C01G9/00 , C01G11/00 , C01G11/02 , C01G28/00 , C30B1/08 , C30B13/00 , C30B13/14 , C30B29/40 , C30B29/48 , C30B15/10
CPC分类号： C30B13/14 , C30B1/08 , C30B13/00 , C30B29/48 , Y10S117/90
摘要： A large polycrystalline body of a 2,6 or 3,5 volatile compound is produced in a graphite crucible under low external pressure by passing a narrow molten zone through a charge of the compound contained in the graphite crucible the interior of which is coated with pyrolytic graphite. By a similar technique, but by use of a hot zone cooler then the molten zone, the polycrystalline body is converted to a monocrystalline body.
摘要翻译：通过使包含在石墨坩埚中的化合物的电荷通过狭窄的熔融区域，在低外部压力下在石墨坩埚中产生2,6或3,5种挥发性化合物的大多晶体，其内部涂覆有热解石墨。通过类似的技术，但是通过使用热区域冷却器，然后熔融区域，多晶体转变为单晶体。

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