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    • 60. 发明授权
    • Corrosion-resistant aluminum article for semiconductor processing
equipment
    • 用于半导体加工设备的耐腐蚀铝制品
    • US5811195A
    • 1998-09-22
    • US499983
    • 1995-07-10
    • Craig BercawLaxman MurugeshJoshua E. Byrne
    • Craig BercawLaxman MurugeshJoshua E. Byrne
    • C23C8/02C23C8/08C23C8/36C23C16/44H01J37/32H01L21/02G02B5/08
    • H01J37/32477C23C16/4404C23C8/02C23C8/08C23C8/36H01J37/32559Y10T428/12729Y10T428/12736Y10T428/24967Y10T428/265
    • We have discovered that corrosion of an aluminum article (such as a susceptor) exposed to corrosive halogen-containing species within semiconductor processing apparatus can be avoided by fabricating the article from a high purity aluminum-magnesium alloy having an optimum magnesium content. Upon exposure of the article to a halogen-containing species, a protective magnesium halide layer is formed upon or beneath the surface of the article. The protective layer prevents halogens from penetrating to the base aluminum, thereby protecting the article from corrosion and cracking. To protect the magnesium halide layer from abrasion, the article preferably also includes a hard, cohesive coating over the magnesium halide layer. A preferred cohesive coating is aluminum oxide or aluminum nitride. The magnesium content of the aluminum article, to enable formation of a magnesium halide layer, should be in the range of about 0.1% to about 6% by weight, depending on the operational temperature of the article. For temperatures greater than about 250.degree. C., the magnesium content of the aluminum article should range between about 0.1% by weight and about 1.5% by weight of the article. The magnesium may be present throughout the entire article, or at least in a region of the article beneath or at the surface which is to be rendered corrosion-resistant. Although the magnesium can react with chlorine, fluorine, or bromine to form a protective layer of MgCl.sub.2, MgF.sub.2, MgBr.sub.2 or combinations thereof, the most preferred protective layer is one formed of MgF.sub.2. To ensure that the magnesium present in the aluminum article is available for reaction with the halogen to form the protective layer, the magnesium content should exceed the silicon content of the aluminum article by an amount sufficient to ensure formation of the protective layer.
    • 我们已经发现,通过从具有最佳镁含量的高纯度铝镁合金制造该制品,可以避免在半导体加工装置内暴露于含腐蚀性卤素物质的铝制品(例如感受器)的腐蚀。 在将物品暴露于含卤素物质时,在制品的表面上或下方形成保护性卤化镁层。 保护层防止卤素渗透到基底铝,从而保护制品免受腐蚀和破裂。 为了保护卤化镁层免受磨损,制品优选还包括在卤化镁层上的硬的,内聚的涂层。 优选的粘合涂层是氧化铝或氮化铝。 取决于制品的操作温度,铝制品的镁含量,以形成卤化镁层应当在约0.1%至约6%重量的范围内。 对于大于约250℃的温度,铝制品的镁含量应在制品的约0.1重量%至约1.5重量%的范围内。 镁可以存在于整个制品中,或至少在制品的下方或表面上的要被赋予耐腐蚀性的区域中。 虽然镁可与氯,氟或溴反应形成MgCl 2,MgF 2,MgBr 2或其组合的保护层,但最优选的保护层是由MgF 2形成的保护层。 为了确保铝制品中存在的镁可用于与卤素反应以形成保护层,镁含量应超过铝制品的硅含量足以确保保护层的形成。