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51. 发明授权

US07923175B2 Photomask structure 有权
标题翻译：光掩模结构
公开(公告)号：US07923175B2
公开(公告)日：2011-04-12
申请号：US11307506
申请日：2006-02-10
申请人： Chun-Chung Huang , Chin-Cheng Yang
发明人： Chun-Chung Huang , Chin-Cheng Yang
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/32
摘要： A photomask structure is described, including a substrate having multiple half-tone phase shift patterns on a device region and multiple opaque patterns on a die seal ring region. By using the photomask, a side lobe effect does not occur to the photoresist layer corresponding to the die seal ring region in the exposure step.
摘要翻译：描述了一种光掩模结构，其包括在器件区域上具有多个半色调相移图案的衬底和在芯片密封环区域上的多个不透明图案。通过使用光掩模，在曝光步骤中，对应于模具密封环区域的光致抗蚀剂层不会发生旁瓣效应。

52. 发明授权

US07916284B2 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
标题翻译：检测方法和装置，光刻设备，光刻处理单元和器件制造方法
公开(公告)号：US07916284B2
公开(公告)日：2011-03-29
申请号：US11488170
申请日：2006-07-18
申请人： Mircea Dusa , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer
发明人： Mircea Dusa , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer
IPC分类号： G01B9/00 , G01B11/30 , G01B11/14 , G01B11/04 , G03F9/00 , G03C5/00
CPC分类号： G03F7/70683 , G03F7/70516 , G03F7/70616 , G03F7/70625 , G03F7/70641
摘要： In a scatterometric method differential targets with different sensitivities to parameters of interest are printed in a calibration matrix and difference spectra obtained. principal component analysis is applied to the difference spectra to obtain a calibration function that is less sensitive to variations in the underlying structure than a calibration function obtained from spectra obtained from a single target.
摘要翻译：在散射方法中，将具有不同感光度的感光度的差分目标印刷在校准矩阵中并获得差分光谱。将主成分分析应用于差分光谱，以获得对从单个目标获得的光谱获得的校准函数对底层结构的变化较不敏感的校准函数。

53. 发明授权

US07914954B2 Stencil, stencil design system and method for cell projection particle beam lithography 有权
标题翻译：模板，模板设计系统和用于单元投影粒子束光刻的方法
公开(公告)号：US07914954B2
公开(公告)日：2011-03-29
申请号：US12207342
申请日：2008-09-09
申请人： Akira Fujimura , Takashi Mitsuhashi , Katsuo Komuro
发明人： Akira Fujimura , Takashi Mitsuhashi , Katsuo Komuro
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20 , Y10S430/143
摘要： Stencil masks, particle beam lithography characters and methods for designing the same for use in particle beam lithography are disclosed. The masks, characters and methods for designing them allows for more accurately writing images by reducing various chemical and physical effects, particularly Coulomb and proximity effects. Particle current reaching a surface is reduced by introducing shield areas, which preserve the shape and fidelity of the written image. The shape of the written image is further corrected by systematically adjusting the shape of the character or mask.
摘要翻译：公开了用于粒子束光刻的模版掩模，粒子束光刻特征及其设计方法。用于设计它们的掩模，字符和方法允许通过减少各种化学和物理效应，特别是库仑和邻近效应来更准确地写入图像。通过引入屏蔽区域来减小到达表面的粒子电流，这保护了书写图像的形状和保真度。通过系统地调整字符或掩模的形状来进一步校正书写图像的形状。

54. 发明授权

US07906258B2 Photomask, photomask superimposition correcting method, and manufacturing method of semiconductor device 有权
标题翻译：光掩模，光掩模叠加校正方法和半导体器件的制造方法
公开(公告)号：US07906258B2
公开(公告)日：2011-03-15
申请号：US12047516
申请日：2008-03-13
申请人： Nobuhiro Komine , Kazutaka Ishigo , Noriaki Sasaki , Masayuki Hatano
发明人： Nobuhiro Komine , Kazutaka Ishigo , Noriaki Sasaki , Masayuki Hatano
IPC分类号： G03F1/00 , G03C5/00 , H01L21/00
CPC分类号： G03F9/7076 , G03F1/36 , G03F1/42 , G03F7/70633
摘要： In a photomask in which a device pattern, an alignment mark and a superimposition inspection mark are formed on a light transmitting base, each of the alignment mark and the superimposition inspection mark includes a main mark portion, and first and second auxiliary pattern portions. The main mark portion is constituted of one of a space pattern and a line pattern, the pattern having a linear width to be resolved on a photosensitive film formed on a semiconductor wafer, and each of the first and second auxiliary pattern portions includes an auxiliary pattern constituted of one of a repeated pattern of a space pattern and a repeated pattern of a line pattern, the repeated pattern having a linear width not to be resolved on the photosensitive film. The pitch of the repeated pattern is equal to the minimum pitch of the device pattern.
摘要翻译：在其中在透光基底上形成器件图案，对准标记和叠加检查标记的光掩模中，每个对准标记和叠加检查标记都包括主标记部分和第一和第二辅助图案部分。主标记部分由空间图案和线条图案之一构成，该图形具有在半导体晶片上形成的感光膜上被分辨的线宽，并且第一和第二辅助图案部分中的每一个包括辅助图案由空间图案的重复图案和线图案的重复图案之一构成，重复图案具有在感光膜上不被分辨的线宽。重复图案的间距等于设备图案的最小间距。

55. 发明申请

US20110045414A1 RINSING METHOD, DEVELOPING METHOD, DEVELOPING SYSTEM AND COMPUTER-READ STORAGE MEDIUM 有权
标题翻译：研究方法，开发方法，开发系统和计算机读取存储介质
公开(公告)号：US20110045414A1
公开(公告)日：2011-02-24
申请号：US12913420
申请日：2010-10-27
申请人： Hirofumi TAKEGUCHI , Junji NAKAMURA , Kousuke YOSHIHARA
发明人： Hirofumi TAKEGUCHI , Junji NAKAMURA , Kousuke YOSHIHARA
IPC分类号： G03C5/00
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).
摘要翻译：本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑（步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂基底与冲洗液一起（步骤7）。

56. 发明授权

US07892712B2 Exposure method 有权
标题翻译：曝光方法
公开(公告)号：US07892712B2
公开(公告)日：2011-02-22
申请号：US12125074
申请日：2008-05-22
申请人： Chiang-Lin Shih , Feng-Yi Chen , Kuo-Yao Cho
发明人： Chiang-Lin Shih , Feng-Yi Chen , Kuo-Yao Cho
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F7/7085 , F15B2211/20515 , G03F7/70516 , G03F9/7003 , G03F9/7011 , G03F9/7019 , G03F9/7046 , G03F9/7088
摘要： An exposure method suitable for a photolithography process is described. First, a wafer with a group of alignment marks formed thereon is provided. A first alignment step is conducted by using the group of the alignment marks on the wafer to obtain a first calibration data. Next, a second alignment step is conducted by using a portion of the group of alignment marks on the wafer to obtain a second calibration data. The first calibration data is then compared with the second calibration data to obtain a comparison result. Next, a photoresist exposure step is conducted on the wafer according to the comparison result.
摘要翻译：描述适用于光刻工艺的曝光方法。首先，提供在其上形成有一组对准标记的晶片。通过使用晶片上的对准标记组来进行第一对准步骤以获得第一校准数据。接下来，通过使用晶片上的一组对准标记的一部分来进行第二对准步骤，以获得第二校准数据。然后将第一校准数据与第二校准数据进行比较以获得比较结果。接下来，根据比较结果在晶片上进行光致抗蚀剂曝光步骤。

57. 发明授权

US07879514B2 Lithographic method and patterning device 有权
标题翻译：平版印刷方法和图案形成装置
公开(公告)号：US07879514B2
公开(公告)日：2011-02-01
申请号：US11498980
申请日：2006-08-04
申请人： Geoffrey Norman Phillipps , Cheng-Qun Gui , Rudy Jan Maria Pellens , Paulus Wilhelmus Leonardus Van Dijk
发明人： Geoffrey Norman Phillipps , Cheng-Qun Gui , Rudy Jan Maria Pellens , Paulus Wilhelmus Leonardus Van Dijk
IPC分类号： G03F9/00 , G03C5/00 , G03F1/00
CPC分类号： G03F7/70475 , G03F7/70633
摘要： A lithographic method includes patterning a beam of radiation with a patterning device. The patterning device includes at least two image patterning portions and at least two metrology mark patterning portions. The method also includes projecting at least two image portions of the patterned beam of radiation sequentially onto target portions of a substrate such that the projected image portions are substantially adjacent to each other on the substrate and collectively form a composite image on the substrate. The method also includes projecting a metrology mark onto the substrate outside of the area of the composite image at the same time as projecting each of at least two of the image portions, and measuring the alignment of the metrology marks to determine the relative positions of the at least two image portions.
摘要翻译：光刻方法包括用图案形成装置图案化辐射束。图案形成装置包括至少两个图像构图部分和至少两个计量标记图案形成部分。该方法还包括将图案化的辐射束的至少两个图像部分顺序地投影到基板的目标部分上，使得投影的图像部分在基板上基本上彼此相邻并且在基板上共同形成合成图像。所述方法还包括在将所述图像部分中的至少两个投影到所述图像部分中的每一个的同时，将所述测量标记投影到所述合成图像的区域外部的所述基板上，并且测量所述计量标记的对准以确定所述合成图像的相对位置至少两个图像部分。

58. 发明授权

US07867673B2 Substrate-processing apparatus, substrate-processing method, substrate-processing program, and computer-readable recording medium recorded with such program 有权
标题翻译：基板处理装置，基板处理方法，基板处理程序和记录有该程序的计算机可读记录介质
公开(公告)号：US07867673B2
公开(公告)日：2011-01-11
申请号：US12065782
申请日：2006-09-13
申请人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
发明人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
IPC分类号： G03C5/00 , G03F1/00 , H01L21/00
CPC分类号： H01L21/67225 , G03F7/168 , G03F7/3071 , G03F7/40 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A pattern forming system 1 includes a checking apparatus 400, a storage device 502, and a control section 500. The checking apparatus 400 is configured to measure and check a state of a resist pattern formed on a substrate W after a developing process and output a first check result thus obtained, and to measure and check a state of a pattern formed on the substrate after an etching process and output a second check result thus obtained. The storage device 502 stores a correlation formula obtained from the first check result and the second check result. The control section 500 is configured to use the correlation formula to obtain a target value of the state of the pattern after the developing process from a target value of the state of the pattern after the etching process, and to use a difference between the target value of the state of the pattern after the developing process and the first check result to set a condition for the first heat process and/or the second heat process.
摘要翻译：图案形成系统1包括检查装置400，存储装置502和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的状态，并输出第一检查结果，并且在蚀刻处理之后测量和检查在基板上形成的图案的状态，并输出由此获得的第二检查结果。存储装置502存储从第一检查结果和第二检查结果获得的相关公式。控制部500被配置为使用相关公式从蚀刻处理之后的图案的状态的目标值获得显影处理之后的图案的状态的目标值，并且使用目标值的显影过程之后的图案状态和第一检查结果来设定第一加热处理和/或第二加热处理的条件。

59. 发明授权

US07862966B2 Substrate-processing apparatus, substrate-processing method, substrate-processing program, and computer-readable recording medium recorded with such program 有权
标题翻译：基板处理装置，基板处理方法，基板处理程序和记录有该程序的计算机可读记录介质
公开(公告)号：US07862966B2
公开(公告)日：2011-01-04
申请号：US12065809
申请日：2006-09-13
申请人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
发明人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
IPC分类号： G03C5/00 , G03F1/00 , H01L21/00
CPC分类号： G03F7/40
摘要： A pattern forming system 1 is configured to execute a series of processes, which includes a first heat process for performing a heat process on a substrate W after a resist liquid coating process, a light exposure process for performing light exposure on a resist film in accordance with a predetermined pattern, a second heat process for promoting a chemical reaction in the resist film after the light exposure, a developing process for developing the resist film after the light exposure, and an etching process for etching an oxide film by use of a resist pattern formed by the developing process as a mask. The system includes a checking apparatus 400 configured to measure and check a state of a pattern formed after the etching process, and a control section 500 configured to use a check result to set a condition for the first heat process and/or the second heat process so as to cause the state of the pattern to be uniform on a surface of the substrate W after the etching process.
摘要翻译：图案形成系统1被配置为执行一系列处理，其包括在抗蚀剂液体涂覆处理之后在衬底W上执行热处理的第一热处理，用于在抗蚀剂膜上进行曝光的曝光工艺具有预定图案，用于促进曝光后的抗蚀剂膜中的化学反应的第二热处理，曝光后的抗蚀剂膜显影的显影处理以及通过使用抗蚀剂蚀刻氧化膜的蚀刻工艺由显影过程形成的图案作为掩模。该系统包括：检查装置400，被配置为测量和检查在蚀刻处理之后形成的图案的状态;以及控制部分500，被配置为使用检查结果来设置用于第一加热处理和/或第二加热处理的条件从而在蚀刻处理之后使图案的状态在基板W的表面上均匀。

60. 发明授权

US07855047B2 Reticle set, method for designing a reticle set, exposure monitoring method, inspection method for reticle set and manufacturing method for a semiconductor device 有权
公开(公告)号：US07855047B2
公开(公告)日：2010-12-21
申请号：US12654292
申请日：2009-12-16
申请人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
发明人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
IPC分类号： H01L21/00 , G03F1/00 , G03C5/00
CPC分类号： G03F7/70466 , G03F1/44 , G03F1/70 , G03F7/70625
摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.

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