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1. 发明授权

US08231285B2 Substrate processing method and apparatus 有权
标题翻译：基板加工方法及装置
公开(公告)号：US08231285B2
公开(公告)日：2012-07-31
申请号：US12610907
申请日：2009-11-02
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/53
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

2. 发明申请

US20110209826A1 SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：基板处理方法，计算机可读存储介质和基板处理系统
公开(公告)号：US20110209826A1
公开(公告)日：2011-09-01
申请号：US13103708
申请日：2011-05-09
申请人： Masahide TADOKORO , Kunie Ogata
发明人： Masahide TADOKORO , Kunie Ogata
IPC分类号： C23F1/08
CPC分类号： H01L21/32139 , G03F7/705 , G03F7/70525 , G03F7/70616 , G03F7/70625 , G03F7/7075 , G03F7/70991 , H01L21/67109 , H01L21/67178 , H01L21/67253 , H01L21/67288 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The substrate processing system includes a measuring apparatus that measures any of film thickness, a refractive index, an absorption coefficient, and warpage. The system includes an apparatus for performing photolithography on the substrate to form a resist pattern and an etching apparatus that etches a processing film. A control unit includes a first relation between an initial condition and a dimension of the pattern of the processing film and a second relation between a processing condition of the predetermined processing and the dimension of the pattern of the processing film. The control unit estimates a dimension of the pattern of the processing film after the etching treatment from the first relation based on a measurement result and corrects the processing condition of the predetermined processing in the photolithography or the etching from the second relation based on an estimation result of the dimension of the pattern.
摘要翻译：基板处理系统包括测量膜厚，折射率，吸收系数和翘曲中的任何一个的测量装置。该系统包括用于在基板上进行光刻以形成抗蚀剂图案的装置和蚀刻处理膜的蚀刻装置。控制单元包括处理膜的图案的初始状态和尺寸之间的第一关系以及预定处理的处理条件和处理膜的图案的尺寸之间的第二关系。控制单元基于测量结果从第一关系估计蚀刻处理后的处理膜的图案的尺寸，并根据估计结果校正光刻中的预定处理或第二关系的蚀刻的处理条件的图案尺寸。

3. 发明授权

US07985516B2 Substrate processing method, computer-readable storage medium and substrate processing system 有权
标题翻译：基板处理方法，计算机可读存储介质和基板处理系统
公开(公告)号：US07985516B2
公开(公告)日：2011-07-26
申请号：US12426600
申请日：2009-04-20
申请人： Kunie Ogata , Masahide Tadokoro , Tsuyoshi Shibata , Shinichi Shinozuka
发明人： Kunie Ogata , Masahide Tadokoro , Tsuyoshi Shibata , Shinichi Shinozuka
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/38 , H01L21/67225 , H01L21/67248
摘要： A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.
摘要翻译：基于先前获得的抗蚀剂图案的尺寸和热处理温度之间的关系，基于热处理后的抗蚀剂图案的第二维度，基于基板上的抗蚀剂图案的第一尺寸的测量来校正热处理的处理温度在校正后的处理温度下进行处理，将第二维度的基板内的分布分类成由近似曲面和非线性成分表示的线性分量，根据线性分量来校正曝光处理的处理条件从先前获得的抗蚀剂图案的尺寸和曝光处理的处理条件之间的关系以及在温度校正步骤中校正的处理温度下的热处理和在曝光条件校正步骤中校正的处理条件下的曝光处理进行到形成一个预先确定模式。

4. 发明授权

US07968260B2 Substrate processing method, computer-readable storage medium, and substrate processing system 有权
标题翻译：基板处理方法，计算机可读存储介质和基板处理系统
公开(公告)号：US07968260B2
公开(公告)日：2011-06-28
申请号：US12369198
申请日：2009-02-11
申请人： Masahide Tadokoro , Kunie Ogata
发明人： Masahide Tadokoro , Kunie Ogata
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： H01L21/32139 , G03F7/705 , G03F7/70525 , G03F7/70616 , G03F7/70625 , G03F7/7075 , G03F7/70991 , H01L21/67109 , H01L21/67178 , H01L21/67253 , H01L21/67288 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present invention has: a first step of measuring, as an initial condition of a substrate, any of a film thickness of a processing film on the substrate, a refractive index of the processing film, an absorption coefficient of the processing film, and a warpage amount of the substrate; a second step of estimating a dimension of a pattern of the processing film after predetermined processing from a previously obtained first relation between the initial condition and the dimension of the pattern of the processing film based on a measurement result of the initial condition; a third step of obtaining a correction value for a processing condition of the predetermined processing from a previously obtained second relation between the processing condition of the predetermined processing and the dimension of the pattern of the processing film based on an estimation result of the dimension of the pattern; a fourth step of correcting the processing condition of the predetermined processing based on the correction value; and a fifth step of performing predetermined processing on the substrate under the corrected processing condition to form the predetermined pattern in the processing film on the substrate.
摘要翻译：本发明具有：第一步骤，作为基板的初始状态，测量基板上的处理膜的膜厚，处理膜的折射率，处理膜的吸收系数和基板的翘曲量; 第二步骤，基于初始条件的测量结果，从先前获得的处理膜的图案的初始状态和尺寸之间的第一关系估计处理膜的图案的尺寸; 第三步骤，基于预定处理的处理条件和处理膜的图案的尺寸之间的先前获得的第二关系，基于预定处理的尺寸的估计结果，获得预定处理的处理条件的校正值模式; 第四步骤，基于校正值来校正预定处理的处理条件; 以及在校正后的处理条件下对基板进行规定处理以在基板上的处理膜中形成规定图案的第五工序。

5. 发明授权

US07884950B2 Substrate processing method, program, computer-readable storage medium, and substrate processing system 有权
标题翻译：基板处理方法，程序，计算机可读存储介质和基板处理系统
公开(公告)号：US07884950B2
公开(公告)日：2011-02-08
申请号：US12300135
申请日：2007-05-11
申请人： Heiko Weichert , Kunie Ogata , Tsuyoshi Shibata
发明人： Heiko Weichert , Kunie Ogata , Tsuyoshi Shibata
IPC分类号： G01B11/14 , G01B11/28
CPC分类号： G03F7/162 , G01B11/06 , G03F7/70533 , H01L22/12 , H01L22/20
摘要： In a pattern measuring unit installed in a coating and developing treatment system, the height of a pattern formed on a substrate is measured using the Scatterometry method. Based on the measured height of the pattern, an appropriate number of rotations of the substrate during application of a coating solution is calculated, so that the rotation of the substrate during the application is controlled by the calculated number of rotations of the substrate. Since the number of rotations of the substrate when the coating solution is applied to the substrate is controlled, it is unnecessary to stop the system which performs photolithography processing on the substrate, resulting in improved productivity of the substrate.
摘要翻译：在安装在涂布和显影处理系统中的图案测量单元中，使用散射法测量形成在基底上的图案的高度。基于所测量的图案的高度，计算在施加涂布溶液期间适当数量的基材的旋转，使得在施加期间基底的旋转由所计算的基底的旋转数量控制。由于控制将涂布液施加到基板上时的基板的旋转次数，因此不需要在基板上停止进行光刻处理的系统，从而提高基板的生产率。

6. 发明授权

US07780366B2 Resist pattern forming method 有权
标题翻译：抗蚀图案形成方法
公开(公告)号：US07780366B2
公开(公告)日：2010-08-24
申请号：US11831622
申请日：2007-07-31
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/32
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

7. 发明申请

US20090181316A1 SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER-READABLE STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：基板处理方法，程序，计算机可读存储介质和基板处理系统
公开(公告)号：US20090181316A1
公开(公告)日：2009-07-16
申请号：US12300135
申请日：2007-05-11
申请人： Heiko Weichert , Kunie Ogata , Tsuyoshi Shibata
发明人： Heiko Weichert , Kunie Ogata , Tsuyoshi Shibata
IPC分类号： G03F7/20 , G03B27/32
CPC分类号： G03F7/162 , G01B11/06 , G03F7/70533 , H01L22/12 , H01L22/20
摘要： In a pattern measuring unit installed in a coating and developing treatment system, the height of a pattern formed on a substrate is measured using the Scatterometry method. Based on the measured height of the pattern, an appropriate number of rotations of the substrate during application of a coating solution is calculated, so that the rotation of the substrate during the application is controlled by the calculated number of rotations of the substrate. Since the number of rotations of the substrate when the coating solution is applied to the substrate is controlled, it is unnecessary to stop the system which performs photolithography processing on the substrate, resulting in improved productivity of the substrate.
摘要翻译：在安装在涂布和显影处理系统中的图案测量单元中，使用散射法测量形成在基底上的图案的高度。基于所测量的图案的高度，计算在施加涂布溶液期间适当数量的基材的旋转，使得在施加期间基底的旋转由所计算的基底的旋转数量来控制。由于控制将涂布液施加到基板上时的基板的旋转次数，因此不需要在基板上停止进行光刻处理的系统，从而提高基板的生产率。

8. 发明申请

US20090104548A1 SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH SUCH PROGRAM 有权
标题翻译：基板处理设备，基板处理方法，基板处理程序以及使用此程序记录的计算机可读记录介质
公开(公告)号：US20090104548A1
公开(公告)日：2009-04-23
申请号：US12065829
申请日：2006-09-13
申请人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
发明人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
IPC分类号： G03F7/20 , G03B27/52
CPC分类号： G03F7/40 , G03F7/38
摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.
摘要翻译：图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

9. 发明申请

US20080074657A1 SUBSTRATE MEASURING METHOD, COMPUTER-READABLE RECORDING MEDIUM RECORDING PROGRAM THEREON, AND SUBSTRATE MEASURING SYSTEM 有权
标题翻译：基板测量方法，计算机可读记录介质程序及基板测量系统
公开(公告)号：US20080074657A1
公开(公告)日：2008-03-27
申请号：US11856308
申请日：2007-09-17
申请人： Yoshihiro Kondo , Kunie Ogata , Shinichi Shinozuka
发明人： Yoshihiro Kondo , Kunie Ogata , Shinichi Shinozuka
IPC分类号： G01N21/00
CPC分类号： H01L21/67253 , H01L21/67248
摘要： In the present invention, for measurement of line widths, for example, at 36 locations within a substrate processed in a coating and developing treatment system, the 36 measurement points are divided and, for example, six substrates are used to measure the line widths at all of measurement points. In this event, the line widths at six measurement points are measured in each of the substrate, which exist in substrate regions different for each substrate. Then, the measurement results of the line widths at the measurement points of the substrates are combined, so that the line widths at 36 measurement points are finally detected. According to the present invention, the measurements of product substrates can be performed without decreasing the throughput of processing of the product substrates.
摘要翻译：在本发明中，为了测量线宽度，例如在涂布和显影处理系统中处理的基板内的36个位置处，36个测量点被分割，并且例如使用六个基板来测量线宽所有测量点。在这种情况下，在每个衬底中测量六个测量点处的线宽度，每个衬底存在于对于每个衬底不同的衬底区域中。然后，将基板的测定点的线宽度的测定结果合并，最终检测36个测定点的线宽。根据本发明，可以在不降低产品基板的加工生产能力的情况下进行产品基板的测量。

10. 发明授权

US06990380B2 Substrate processing apparatus and information storage apparatus and method 失效
公开(公告)号：US06990380B2
公开(公告)日：2006-01-24
申请号：US10023898
申请日：2001-12-21
申请人： Yuji Yoshimoto , Ryouichi Uemura , Kunie Ogata , Yoichi Deguchi
发明人： Yuji Yoshimoto , Ryouichi Uemura , Kunie Ogata , Yoichi Deguchi
IPC分类号： G05B11/01
CPC分类号： H01L21/67276 , G05B23/0264 , G05B2219/45031
摘要： An object of the present invention is to grasp easily a process history of a target object such as a semiconductor wafer. The processing apparatus of the present invention includes: a processing apparatus body which includes a plurality of process units for executing a prescribed process to a target object, and transport mechanism for transporting said target object between the process units; a first controller for controlling the processing apparatus as a whole; a second controller for controlling the process units; an information storage section for taking in a signal transmitted and received between the first and second controllers; and a host computer for monitoring operation states of the process units. The present invention is extended to a processing system including a plurality of the processing apparatuses connected with a host computer which is further connected with a monitor computer through a communication network.

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