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51. 发明授权

US09245708B2 Method and apparatus for electron beam lithography 有权
公开(公告)号：US09245708B2
公开(公告)日：2016-01-26
申请号：US14618644
申请日：2015-02-10
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Yu-Chi Che
IPC分类号： G21K5/04 , H01J37/02 , G06F17/50 , H01J37/317 , H01J37/147
CPC分类号： H01J37/1472 , G06F17/5081 , H01J37/023 , H01J37/3174 , H01J2237/30455 , H01J2237/3174 , H01J2237/3175 , H01J2237/31762 , H01J2237/31774 , H01J2237/31789
摘要： A system using an energy beam to expose patterns on a wafer includes first mirror elements, a multiplexer element, and second mirror elements. The first and second mirror elements are dynamically controlled to reflect the energy beam to the wafer. The first mirror elements are configured in a first chain having a first data input and a first data output. The multiplexer element includes a second data input, a third data input, a select input, and a second data output. The third data input is coupled to the first data output. The second mirror elements are configured in a second chain having a fourth data input.

52. 发明授权

US09206504B2 Low energy ion milling or deposition 有权
标题翻译：低能离子研磨或沉积
公开(公告)号：US09206504B2
公开(公告)日：2015-12-08
申请号：US14243583
申请日：2014-04-02
申请人： FEI Company
发明人： Johannes Jacobus Lambertus Mulders , Remco Theodorus Johannes Petrus Geurts , Petrus Hubertus Franciscus Trompenaars , Eric Gerardus Theodoor Bosch
IPC分类号： C23C14/28 , H05B6/00 , C23C14/48 , H01J37/305 , H01J37/317 , H01J37/02 , G01N1/28 , G01N1/32
CPC分类号： C23C14/48 , G01N1/286 , G01N1/32 , H01J37/02 , H01J37/3053 , H01J37/3171 , H01J37/3178 , H01J2237/004 , H01J2237/006 , H01J2237/31732 , H01J2237/3174 , H01J2237/31742 , H01J2237/31745 , H01J2237/31749
摘要： Samples to be imaged in a Transmission Electron Microscope must be thinned to form a lamella with a thickness of, for example, 20 nm. This is commonly done by sputtering with ions in a charged particle apparatus equipped with a Scanning Electron Microscope (SEM) column, a Focused Ion Beam (FIB) column, and one or more Gas Injection Systems (GISses). A problem that occurs is that a large part of the lamella becomes amorphous due to bombardment by ions, and that ions get implanted in the sample. The invention provides a solution by applying a voltage difference between the capillary of the GIS and the sample, and directing a beam of ions or electrons to the jet of gas. The beam ionizes gas that is accelerated to the sample, where (when using a low voltage between sample and GIS) low energy milling occurs, and thus little sample thickness becomes amorphous.
摘要翻译：在透射电子显微镜中成像的样品必须变薄以形成厚度为例如20nm的薄片。这通常通过在装备有扫描电子显微镜（SEM）柱，聚焦离子束（FIB）柱和一个或多个气体注入系统（GISs））的带电粒子装置中用离子溅射来完成。发生的一个问题是，由于离子的轰击，大部分薄片变成无定形，并且离子被植入样品中。本发明通过在GIS的毛细管和样品之间施加电压差并且将一束离子或电子引导到气体射流来提供解决方案。光束电离加速到样品的气体，其中（当在样品和GIS之间使用低电压时）发生低能量铣削，因此样品厚度变得非晶态。

53. 发明授权

US09202665B2 Charged particle beam apparatus for removing charges developed on a region of a sample 有权
标题翻译：用于去除在样品区域上产生的电荷的带电粒子束装置
公开(公告)号：US09202665B2
公开(公告)日：2015-12-01
申请号：US13981952
申请日：2011-11-30
申请人： Hiroyuki Matsui , Osamu Komuro , Makoto Nishihara , Zhaohui Cheng
发明人： Hiroyuki Matsui , Osamu Komuro , Makoto Nishihara , Zhaohui Cheng
IPC分类号： H01J37/28 , H01J37/02
CPC分类号： H01J37/026 , H01J37/28 , H01J2237/0044 , H01J2237/047
摘要： Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam.After charged particle beam irradiation for measurement of the sample, the apparatus controls a retarding voltage or/and an accelerating voltage at a stage previous to a next measurement, and then neutralizes an electric charge by reducing a difference between a value of the retarding voltage and that of the accelerating voltage to a value smaller than during the currently ongoing measurement.The charged particle beam achieves neutralizing without reducing throughput, since the local charge developed on the region of the sample that has been irradiated with the charged particle beam is removed, even without an additional device mounted in the apparatus.
摘要翻译：提供一种带电粒子束装置，其适于使得即使附加装置未安装在带电粒子束装置中，该装置通过中和在已经被充电的照射的样品的区域上产生的局部电荷，粒子束。在用于测量样品的带电粒子束照射之后，该装置在下一次测量之前的阶段控制延迟电压和/或加速电压，然后通过减小延迟电压的值和加速电压的值小于当前正在进行的测量中的值。带电粒子束实现中和而不降低生产量，因为即使没有安装在装置中的附加装置，在被带电粒子束照射的样品区域上产生的局部电荷被去除。

54. 发明授权

US09165693B2 Multi-electrode cooling arrangement 有权
标题翻译：多电极冷却布置
公开(公告)号：US09165693B2
公开(公告)日：2015-10-20
申请号：US14541236
申请日：2013-11-14
申请人： MAPPER LITHOGRAPHY IP B.V.
发明人： Willem Henk Urbanus , Marco Jan-Jaco Wieland
IPC分类号： H01J37/141 , H05H1/28 , G21K1/02 , G21K5/04 , H01J37/30 , H01J37/24 , H01J37/317 , H01J37/02 , H01J37/16 , H01J37/065 , H01J37/12
CPC分类号： G21K1/02 , G21K5/04 , H01J37/026 , H01J37/065 , H01J37/12 , H01J37/16 , H01J37/24 , H01J37/3002 , H01J37/3007 , H01J37/3174 , H01J37/3175 , H01J37/3177 , H01J2237/002 , H01J2237/0216 , H01J2237/024 , H01J2237/032 , H01J2237/04 , H01J2237/1215 , H01J2237/16 , H01J2237/1825 , H01J2237/303 , H01J2237/30472
摘要： The invention relates to a collimator electrode, comprising an electrode body (81) that is provided with a central electrode aperture (82), wherein the electrode body defines an electrode height between two opposite main surfaces, and wherein the electrode body accommodates a cooling conduit (105) inside the electrode body for transferring a cooling liquid (102). The electrode body preferably has a disk shape or an oblate ring shape.The invention further relates to a collimator electrode stack for use in a charged particle beam generator, comprising a first collimator electrode and a second collimator electrode that are each provided with a cooling conduit (105) for transferring the cooling liquid (102), and a connecting conduit (110) for a liquid connection between the cooling conduits of the first and second collimator electrodes.
摘要翻译：本发明涉及一种准直器电极，包括设置有中心电极孔（82）的电极体（81），其中电极体限定两个相对的主表面之间的电极高度，并且其中电极体容纳冷却导管（105），用于传送冷却液（102）。电极体优选具有盘状或扁圆形状。本发明还涉及一种用于带电粒子束发生器的准直器电极叠层，其包括第一准直器电极和第二准直器电极，每个准直器电极和第二准直器电极都设置有用于传送冷却液体（102）的冷却导管（105）连接导管（110）用于第一和第二准直仪电极的冷却管道之间的液体连接。

55. 发明申请

US20150221472A1 METHOD AND MECHANISM FOR EROSION DETECTION OF DEFINING APERTURES 有权
标题翻译：用于腐蚀检测定义孔的方法和机理
公开(公告)号：US20150221472A1
公开(公告)日：2015-08-06
申请号：US14169488
申请日：2014-01-31
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： David Timberlake , Mark R. Amato , Nathan Roth
IPC分类号： H01J37/24 , H01J37/02 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/244 , H01J2237/0213 , H01J2237/24495 , H01J2237/24535
摘要： A defining aperture plate having at least two differently sized apertures is used in conjunction with at least two charge collectors. Because of the difference in aperture width, the two charge collectors receive different amounts of ions, where the amount is proportional to the associated aperture width. By monitoring the ratio of the charge collected by the first charge collector to the charge collected by the second collector, the amount of erosion can be monitored and optionally compensated for.
摘要翻译：具有至少两个不同尺寸的孔的限定孔板与至少两个电荷收集器结合使用。由于孔径宽度的差异，两个电荷收集器接收不同量的离子，其中量与相关的孔径宽度成比例。通过监测由第一收集器收集的电荷与由第二收集器收集的电荷的比率，可以监测和可选地补偿侵蚀量。

56. 发明授权

US09070538B2 Pinched plasma bridge flood gun for substrate charge neutralization 有权
标题翻译：用于衬底电荷中和的钳式等离子体桥梁喷枪
公开(公告)号：US09070538B2
公开(公告)日：2015-06-30
申请号：US14137196
申请日：2013-12-20
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Ali Shajii , David Sonnenshein , Michael Kishinevsky , Andrew B. Cowe , Gregory E. Stratoti
IPC分类号： H01J37/30 , H01J37/02 , H01L21/265 , H01J37/32 , H01L21/67
CPC分类号： H01J37/32623 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J37/32174 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/0041 , H01J2237/0044 , H01J2237/327 , H01J2237/3365 , H01L21/67213
摘要： A plasma flood gun for an ion implantation system includes an insulating block portion and first and second conductive block portions disposed on opposite sides of the insulating block portion. Conductive straps can be coupled between the first and second conductive block portions. The conductive block portions and the central body portion include recesses which form a closed loop plasma chamber. A power source is coupled to the conductive block portions for inductively coupling radio frequency electrical power into the closed loop plasma chamber to excite the gaseous substance to generate a plasma. The respective recess in the second conductive block portion includes a pinch region having a cross-sectional dimension that is smaller than a cross-sectional area of portion of the closed loop plasma chamber directly adjacent the pinch region. The pinch region can be positioned immediately adjacent an outlet portion formed in the second conductive block portion.
摘要翻译：用于离子注入系统的等离子体喷枪包括绝缘块部分和设置在绝缘块部分的相对侧上的第一和第二导电块部分。导电带可以耦合在第一和第二导电块部分之间。导电块部分和中心体部分包括形成闭环等离子体室的凹部。电源耦合到导电块部分，用于将射频电力感应耦合到闭环等离子体室中以激发气态物质以产生等离子体。第二导电块部分中的相应凹部包括具有小于直径相邻于闭合区域的闭环等离子体室的部分的横截面积的截面尺寸的夹持区域。夹紧区域可以直接邻近形成在第二导电块部分中的出口部分定位。

57. 发明授权

US08952339B2 Chromatic aberration corrector and method of controlling same 有权
标题翻译：色差校正器及其控制方法
公开(公告)号：US08952339B2
公开(公告)日：2015-02-10
申请号：US13771403
申请日：2013-02-20
申请人： JEOL Ltd.
发明人： Fumio Hosokawa
IPC分类号： H01J37/02 , H01J37/153 , H01J37/26
CPC分类号： H01J37/02 , H01J37/153 , H01J37/26 , H01J2237/1534
摘要： A chromatic aberration corrector and method of controlling this chromatic aberration corrector is offered. The corrector has first and second multipole lenses for producing quadrupole fields and first and second transfer lenses each having a focal length of f. The first and second multipole lenses are arranged on opposite sides of the first and second transfer lenses. The distance between the first multipole lens and the first transfer lens is f. The distance between the first transfer lens and the second transfer lens is 2f. The distance between the second transfer lens and the second multipole lens is f−Δ. The corrector is so designed that the relationship, f>Δ>0, holds.
摘要翻译：提供色差校正器和控制该色像差校正器的方法。校正器具有用于产生四极场的第一和第二多极透镜，每个焦距为f的第一和第二转印透镜。第一和第二多极透镜布置在第一和第二转印透镜的相对侧上。第一多极透镜和第一转印透镜之间的距离为f。第一转印透镜和第二转印透镜之间的距离为2f。第二转印透镜和第二多极透镜之间的距离为f-＆Dgr。校正器的设计使得关系f>＆Dgr>> 0成立。

58. 发明申请

US20150012243A1 Semiconductor Evaluation Device and Computer Program 审中-公开
标题翻译：半导体评估装置和计算机程序
公开(公告)号：US20150012243A1
公开(公告)日：2015-01-08
申请号：US14379315
申请日：2013-02-08
申请人： Hitachi High-Technologies Corporation
发明人： Asuka Honda , Hiroyuki Shindo
IPC分类号： G01B15/00 , G01N23/00 , H01J37/02
CPC分类号： G01B15/00 , G01N23/00 , G03F7/70558 , G03F7/70641 , H01J37/02 , H01L22/12
摘要： The present invention provides a semiconductor evaluation device for fabricating a suitable reference pattern utilized in comparison tests. The semiconductor evaluation device and computer program extract a process window in a more accurate range based on a two-dimensional evaluation of the pattern. In order to achieve the above described objects, the present invention includes a semiconductor evaluation device that measures the dimensions of the pattern formed over the sample based on a signal obtained by way of a charged particle beam device, selects a pattern whose dimensional measurement results satisfy specified conditions or exposure conditions when the pattern is formed, and forms synthesized contour data, by synthesizing contour data obtained from images of an identically shaped pattern in design data, and also a pattern formed under the selected exposure conditions or a pattern having a positional relation that is already known relative to the selected pattern.
摘要翻译：本发明提供了一种用于制造在比较测试中使用的合适参考图案的半导体评估装置。半导体评估装置和计算机程序基于对图案的二维评估，在更准确的范围内提取处理窗口。为了实现上述目的，本发明包括一种半导体评估装置，其基于通过带电粒子束装置获得的信号来测量在样本上形成的图案的尺寸，选择尺寸测量结果满足的图案指定条件或曝光条件，并且通过合成从设计数据中的相同形状图案的图像获得的轮廓数据，以及在所选择的曝光条件下形成的图案或具有位置关系的图案，形成合成轮廓数据这是相对于所选择的模式已知的。

59. 发明申请

US20140102638A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20140102638A1
公开(公告)日：2014-04-17
申请号：US14138166
申请日：2013-12-23
申请人： Tokyo Electron Limited
发明人： Yoshinobu Ooya , Akira Tanabe , Yoshinori Yasuta
IPC分类号： H01J37/02
CPC分类号： H01J37/02 , H01J37/32091 , H01J37/32165 , H01J2237/3348
摘要： A plasma processing apparatus capable of optimizing a plasma process is provided. The plasma processing apparatus includes a control unit for controlling a minimum energy and a maximum energy of ions incident onto a substrate independently of each other such that ion energy of the ions are concentrated at a first energy band and a second energy band respectively. In the plasma processing apparatus, the oxide film is etched to form a hole within the oxide film, the first energy band is lower than a first energy value at which the oxide film is etched while the organic film is not etched, and the second energy band is higher than a second energy value at which an etching yield at an inclined surface of the hole is higher than an etching yield of an upper surface of the organic film.
摘要翻译：提供了能够优化等离子体处理的等离子体处理装置。等离子体处理装置包括用于独立地控制入射到衬底上的离子的最小能量和最大能量的控制单元，使得离子的离子能量分别集中在第一能带和第二能带。在等离子体处理装置中，蚀刻氧化膜以在氧化膜内形成空穴，第一能带低于蚀刻氧化膜的第一能量值，而有机膜未被蚀刻，第二能量带高于第二能量值，在该第二能量值处，孔的倾斜表面处的蚀刻产率高于有机膜的上表面的蚀刻产率。

60. 发明申请

US20140060736A1 TEMPLATES INCLUDING SELF-ASSEMBLED BLOCK COPOLYMER FILMS 有权
标题翻译：模式包括自组装块状共聚物薄膜
公开(公告)号：US20140060736A1
公开(公告)日：2014-03-06
申请号：US14075647
申请日：2013-11-08
申请人： Micron Technology, Inc.
发明人： Dan B. Millward , Donald L. Westmoreland , Gurtej S. Sandhu
IPC分类号： H01J37/02
CPC分类号： H01J37/02 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , G03F7/265 , Y10T428/24 , Y10T428/24149 , Y10T428/24174 , Y10T428/2438
摘要： Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.
摘要翻译：提供了使用自组装嵌段共聚物制造包括开口和线性微通道的亚光刻纳米尺度微结构阵列的方法，以及由这些方法形成的膜和器件。在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

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