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61. 发明申请

US20050199926A1 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US20050199926A1
公开(公告)日：2005-09-15
申请号：US10895074
申请日：2004-07-21
申请人： Yoshiaki Fukuzumi , Shigeki Takahashi
发明人： Yoshiaki Fukuzumi , Shigeki Takahashi
IPC分类号： G11C11/15 , H01L21/027 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , G11C11/16 , H01L27/228
摘要： According to an aspect of the present invention, there is disclosed a magnetic resistive element comprising a first magnetic layer whose magnetized state changes in accordance with data, a nonmagnetic layer disposed on the first magnetic layer, and a second magnetic layer which is disposed on the nonmagnetic layer and whose magnetized state is fixed, wherein the first magnetic layer has a cross shape in which a maximum length of a first direction is L1 and a maximum length of a second direction crossing the first direction at right angles is L2, and the second magnetic layer has a tetragonal shape in which the maximum length of the first direction is L3 (≦L1) and the maximum length of the second direction is L4 (
摘要翻译：根据本发明的一个方面，公开了一种磁阻元件，其包括磁化状态根据数据变化的第一磁性层，设置在第一磁性层上的非磁性层和设置在第一磁性层上的第二磁性层非磁性层并且其磁化状态是固定的，其中第一磁性层具有第一方向的最大长度为L1并且与第一方向垂直的第二方向的最大长度为L2的十字形状，并且第二磁性层磁性层具有四边形形状，其中第一方向的最大长度为L3（<= L1），第二方向的最大长度为L4（

62. 发明申请

US20050078418A1 Ferromagnetic double tunnel junction element with asymmetric energy band 有权
标题翻译：具有不对称能带的铁磁双隧道结元件
公开(公告)号：US20050078418A1
公开(公告)日：2005-04-14
申请号：US10968336
申请日：2004-10-20
申请人： Yoshiaki Saito , Masayuki Sagoi , Minoru Amano , Kentaro Nakajima , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Saito , Masayuki Sagoi , Minoru Amano , Kentaro Nakajima , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G01R33/09 , G11B5/39 , G11C11/14 , G11C11/15 , G11C11/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , G11B5/33 , G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B5/3954 , G11C11/15 , G11C11/16 , H01L27/224 , H01L27/228
摘要： There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.
摘要翻译：提供了一种磁阻效应元件，包括第一被钉扎铁磁层，面对第一被钉扎铁磁层的第二钉扎铁磁层，第一和第二钉扎铁磁层彼此面对的表面区域在组成上彼此不同，自由铁磁性介于第一和第二被钉扎铁磁层之间的介电层，介于第一被钉扎铁磁层和自由铁磁层之间的第一隧道势垒层以及介于第二钉扎铁磁层与自由铁磁层之间的第二隧道势垒层。

63. 发明授权

US06878879B2 Protector for wire harnesses and mounting mechanism 失效
标题翻译：线束和安装机构的保护器
公开(公告)号：US06878879B2
公开(公告)日：2005-04-12
申请号：US10353518
申请日：2003-01-27
申请人： Shigeki Takahashi , Shintaro Muro
发明人： Shigeki Takahashi , Shintaro Muro
IPC分类号： H02G3/04 , H02G3/06 , H02G3/30 , H02G3/38 , H02G1/00
CPC分类号： H02G3/0418 , H02G3/0437 , H02G3/0608
摘要： A protector for wire harnesses and mounting mechanism are provided, including a body with closed cross section through which the wire harnesses are routed and at least two mounting elements by which the protector is attached to receiving elements. The protector has a feature that a position adjuster including a flexible portion is provided in the body extending between the two mounting elements so that a relative position of the two mounting elements can be easily adjusted.
摘要翻译：提供了用于线束和安装机构的保护器，其包括具有闭合横截面的主体，线束穿过该主体布置，以及至少两个安装元件，保护器通过该至少两个安装元件附接到接收元件。保护器具有在两个安装元件之间延伸的主体中设置包括柔性部分的位置调节器的特征，使得可以容易地调节两个安装元件的相对位置。

64. 发明授权

US06873023B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US06873023B2
公开(公告)日：2005-03-29
申请号：US10418047
申请日：2003-04-18
申请人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G11C11/16 , H01L43/00
CPC分类号： G11C11/16
摘要： A write word line is disposed right under an MTJ element. The write word line extends in an X direction, and a lower surface of the line is coated with a yoke material which has a high permeability. A data selection line (read/write bit line) is disposed right on the MTJ element. A data selection line extends in a Y direction intersecting with the X direction, and an upper surface of the line is coated with the yoke material which has the high permeability. At a write operation time, a magnetic field generated by a write current flowing through a write word line B and data selection line functions on the MTJ element by the yoke material with good efficiency.
摘要翻译：写字线被放置在MTJ元素的正下方。写字线在X方向上延伸，并且线的下表面涂覆有具有高磁导率的磁轭材料。数据选择线（读/写位线）设置在MTJ元件上。数据选择线在与X方向交叉的Y方向上延伸，并且线的上表面涂覆有具有高磁导率的磁轭材料。在写操作时刻，通过写入字线B和数据选择线产生的写入电流产生的磁场通过磁轭材料以良好的效率在MTJ元件上起作用。

65. 发明授权

US06868002B2 Magnetic memory with reduced write current 失效
标题翻译：具有减小写入电流的磁记忆体
公开(公告)号：US06868002B2
公开(公告)日：2005-03-15
申请号：US10771537
申请日：2004-02-05
申请人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
发明人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
IPC分类号： G11C11/14 , G11C11/15 , H01F10/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/3231 , H01L27/224 , H01L27/228
摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.
摘要翻译：提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属纳米颗粒膜。

66. 发明授权

US06831857B2 Magnetic memory 失效
公开(公告)号：US06831857B2
公开(公告)日：2004-12-14
申请号：US10329417
申请日：2002-12-27
申请人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
发明人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
IPC分类号： G11C1115
CPC分类号： G11C11/15
摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

67. 发明授权

US06257394B1 Part-conveying apparatus 有权
标题翻译：部件输送设备
公开(公告)号：US06257394B1
公开(公告)日：2001-07-10
申请号：US09343701
申请日：1999-06-30
申请人： Shigeki Takahashi , Nihei Kaishita , Akira Nemoto
发明人： Shigeki Takahashi , Nihei Kaishita , Akira Nemoto
IPC分类号： B65G4704
CPC分类号： B65G27/12 , B65G47/1407 , B65G47/1428
摘要： A part-conveying apparatus allows parts to align and slide down a sloped chute without stacking therein. The part-conveying apparatus has a chute sloped to align and slide down parts, and a first mobile blade for slidably supporting the parts in a bottom section of the chute in the direction of the chute 9. The lower end section of the chute is connected to a horizontal guide path, and a second conveying blade movable forward and backward is provided in a bottom section of the guide path. The second conveying blade reciprocates in a manner so as to move backward faster than to move forward, thereby conveying forward the parts placed thereon. A projection in the lower end of the first mobile blade engages with a groove of the second mobile blade so as to cause fine movements of the first conveying blade in the direction of the chute in synchronous with back and forth movements of the second conveying blade 26. This allows the parts to side down.
摘要翻译：部件输送装置允许部件在没有堆叠的情况下对准和滑动倾斜的滑槽。部件输送装置具有倾斜的倾斜部，用于对准和滑下部分;以及第一可动叶片，用于沿滑槽9的方向可滑动地支撑滑槽的底部中的部分。滑槽的下端部分连接并且在引导路径的底部设置有可前后移动的第二输送叶片。第二输送叶片以向前移动的方式往复运动，从而向前运送放置在其上的部件。第一活动叶片的下端部的突出部与第二活动叶片的槽接合，从而与第二输送叶片26的前后运动同时地使第一输送叶片在滑槽的方向上进行精细的运动这允许零件朝向侧面。

68. 发明授权

US06241461B1 Apparatus for transporting parts 有权
标题翻译：运输零件的装置
公开(公告)号：US06241461B1
公开(公告)日：2001-06-05
申请号：US09307730
申请日：1999-05-10
申请人： Shigeki Takahashi , Nihei Kaishita , Akira Nemoto
发明人： Shigeki Takahashi , Nihei Kaishita , Akira Nemoto
IPC分类号： B65G2504
CPC分类号： H05K13/028 , B65G25/06 , B65G27/12 , B65G47/1407
摘要： A part transporting apparatus comprises: a guiding groove for lining up parts in one row and guiding the parts; a transporting member which is provided at the base of the guiding groove and transports the parts in a forward direction by itself moving forwards and backwards along the groove; and a driving means for reciprocally driving the transporting member in the forward and backward directions; wherein the transporting member is advanced slowly and retracted rapidly, so as to transport the parts forwards. Provided to this arrangement are: a second stopper which operates so as to open and close in the width direction of the guiding groove, and hold the second part from the front of the row of parts; and a movable first stopper which stops the first part at the tip of the guiding groove; wherein the first stopper is moved forwards synchronously with the transporting member immediately prior to completion of the forward movement of the transporting member, thereby separating the first part in the row from the second part. The first stopper retreats following the retreat of the transporting member. Such an arrangement provides for an apparatus for transporting parts, wherein the first part and second part can be separated in a sure manner even in the event that the parts are non-magnetic material, wherein ease of extracting of the first part is facilitated, and wherein parts can be supplied in a sure manner even in the event that an extracting failure occurs.
摘要翻译：一种部件传送装置包括：引导槽，用于排列一排中的部件并引导部件; 传送构件，其设置在引导槽的基部并通过其沿着槽向前和向后沿向前方向传送部件; 以及用于沿前后方向往复驱动传送部件的驱动装置; 其中传送构件缓慢前进并且迅速地缩回，以便将部件向前运送。提供这样的结构是：第二止动件，其沿着导向槽的宽度方向开闭，并将第二部分从该列的前部保持; 以及可移动的第一止动件，其将所述第一部分停止在所述引导槽的末端; 其中，所述第一止动件在所述输送构件的向前移动完成之前立即与所述输送构件同步向前移动，从而将所述行中的所述第一部分与所述第二部分分离。第一个塞子在运送构件撤退后撤退。这种布置提供了用于运输部件的装置，其中即使在部件是非磁性材料的情况下，第一部分和第二部分也可以以可靠的方式分离，其中易于提取第一部分的方便，以及即使在提取失败的情况下也可以以可靠的方式供给部件。

69. 发明授权

US5640387A Digital loop carrier apparatus for large volume digital signal transmission 失效
标题翻译：用于大容量数字信号传输的数字环路载波装置
公开(公告)号：US5640387A
公开(公告)日：1997-06-17
申请号：US542652
申请日：1995-10-13
申请人： Shigeki Takahashi , Tsuyoshi Ueshima , Kazuo Tanaka , Eiji Shimose
发明人： Shigeki Takahashi , Tsuyoshi Ueshima , Kazuo Tanaka , Eiji Shimose
IPC分类号： H04J3/06 , H04J3/00 , H04J3/08 , H04J3/12 , H04L7/00 , H04Q3/42 , H04Q3/52 , H04Q11/04 , H04J3/02
CPC分类号： H04J3/0688 , H04J3/08 , H04J3/12 , H04Q11/0478 , H04J2203/0005 , H04J2203/0041 , H04J2203/0046 , H04J3/0647 , H04L7/0083
摘要： A high-speed signal input to and output from a high-speed optical interface part connected to an optical fiber transmission line is switched to different lines such that the switching is conducted by cross connect parts on an arbitrary basis. The high-speed signal is separated so as to obtain the low-speed signal. The low-speed signal output from the cross connect parts is separated so as to obtain the subscriber signal by signal terminal parts. Call connections are conducted for each subscriber by a time slot interchange part, whereupon a subscriber interface part performs analog-to-digital and digital-to-analog conversion so as to serve as an interface for a subscriber.
摘要翻译：输入到与光纤传输线连接的高速光接口部分输出的高速信号被切换到不同的线路，从而以任意的方式通过交叉连接部分进行切换。高速信号被分离以获得低速信号。从交叉连接部分输出的低速信号被分离，以便通过信号端子部分获得用户信号。通过时隙交换部分为每个用户进行呼叫连接，由此用户接口部分执行模数转换和数模转换，以便作为用户的接口。

70. 发明授权

US5470770A Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5470770A
公开(公告)日：1995-11-28
申请号：US413404
申请日：1995-03-30
申请人： Shigeki Takahashi , Mitsuhiro Kataoka , Tsuyoshi Yamamoto
发明人： Shigeki Takahashi , Mitsuhiro Kataoka , Tsuyoshi Yamamoto
IPC分类号： H01L21/316 , H01L21/336 , H01L29/78 , H01L21/8234
CPC分类号： H01L21/02255 , H01L21/02238 , H01L21/31662 , H01L29/7813 , Y10S148/126
摘要： A manufacturing method for a semiconductor device, which can attain a low ion voltage in a manufacturing method for a semiconductor device involving a process for forming a groove by etching prior to selective oxidation, selectively oxidizing a region including the groove and thereby making a channel part of the groove, is disclosed. A groove part is thermally oxidized by using a silicon nitride film as a mask. A LOCOS oxide film is formed by this thermal oxidation, and concurrently a U-groove is formed on the surface of an n.sup.- -type epitaxial layer eroded by the LOCOS oxide film, and the shape of the U-groove is fixed. A curve part formed during a chemical dry etching process remains as a curve part on the side surface of the U-groove. Then, an n.sup.+ -type source layer is formed by means of thermal diffusion to a junction thickness of 0.5 to 1 .mu.m, and a channel is set up as well. The junction depth obtained by this thermal diffusion is set up more deeply than the curve part which is formed during the above etching and remains on the side surface of the U-groove after the above selective thermal oxidation.
摘要翻译：一种用于半导体器件的制造方法的半导体器件的制造方法，其包括在选择性氧化之前通过蚀刻形成沟槽的工艺的半导体器件的制造方法，选择性地氧化包括沟槽的区域，从而形成沟道部分的凹槽。通过使用氮化硅膜作为掩模将槽部热氧化。通过该热氧化形成LOCOS氧化物膜，并且在由LOCOS氧化物膜侵蚀的n型外延层的表面上形成U形槽，并且U形槽的形状被固定。在化学干蚀刻过程中形成的曲线部分在U形槽的侧表面上保持为曲线部分。然后，通过热扩散形成0.5±1μm的结合厚度的n +型源极层，并且还设置沟道。通过该热扩散获得的结深度比在上述蚀刻期间形成的曲线部分更深地设置，并且在上述选择性热氧化之后保留在U形槽的侧表面上。

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