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61. 发明授权

US06353258B1 Semiconductor module 失效
标题翻译：半导体模块
公开(公告)号：US06353258B1
公开(公告)日：2002-03-05
申请号：US09603966
申请日：2000-06-26
申请人： Hirokazu Inoue , Ryuichi Saito , Mutsuhiro Mori , Yasutoshi Kurihara , Jin Onuki , Shin Kimura , Satoshi Shimada , Kazuhiro Suzuki , Yukio Kamita , Isao Kobayashi , Kazuji Yamada , Naohiro Momma
发明人： Hirokazu Inoue , Ryuichi Saito , Mutsuhiro Mori , Yasutoshi Kurihara , Jin Onuki , Shin Kimura , Satoshi Shimada , Kazuhiro Suzuki , Yukio Kamita , Isao Kobayashi , Kazuji Yamada , Naohiro Momma
IPC分类号： H01L2334
CPC分类号： H01L23/5386 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/48699 , H01L2224/48747 , H01L2224/49111 , H01L2224/49113 , H01L2224/73265 , H01L2224/85447 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/16151 , H01L2924/16315 , H01L2924/181 , H01L2924/2076 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor module has a plurality of power semiconductor devices mounted on a substrate, and a metal foil for wiring is mounted on the substrate so that an asymmetric unit arrangement of the semiconductor devices is formed. In the device, all of the units are arranged in the same direction on the substrate, and all of the units are electrically connected with electrode terminal feet, and the electrode terminal feet are electrically connected with linkage terminal foot. The electrode terminal feet are disposed with a certain interval.
摘要翻译：半导体模块具有安装在基板上的多个功率半导体器件，并且用于布线的金属箔安装在基板上，从而形成半导体器件的不对称单元布置。在该装置中，所有单元在基板上沿相同的方向排列，并且所有单元与电极端子脚电连接，并且电极端子脚与联动端子脚电连接。电极端子脚以一定间隔设置。

62. 发明授权

US06198126B1 Semiconductor device and power converter using same 有权
标题翻译：半导体器件和功率转换器使用相同
公开(公告)号：US06198126B1
公开(公告)日：2001-03-06
申请号：US09190617
申请日：1998-11-12
申请人： Mutsuhiro Mori , Yasumichi Yasuda , Hiromi Hosoya
发明人： Mutsuhiro Mori , Yasumichi Yasuda , Hiromi Hosoya
IPC分类号： H01L2358
CPC分类号： H01L29/404 , H01L29/408 , H01L2924/0002 , H01L2924/00
摘要： A high voltage semiconductor device is provided with a p layer which forms a main pn-junction, a plurality of p layers which surround the p layer in a ring form, a ring-like n+ layer which further surrounds those p layers, forward field plates extending in the peripheral direction and reverse field plates extending in the inside direction, the field plates being in contact at a low resistance with the p and n+ layers and reaching the surface of an n− layer through an insulating film, the area of the field plates being not less than one half of the n− surface. This arrangement is particularly effective in stabilizing the blocking voltage of a high voltage semiconductor device which is used in a severe environment, and is very effective in improving the reliability of a high voltage control unit.
摘要翻译：高电压半导体器件设置有形成主pn结的p层，围绕p层的环状的多个p层，进一步包围p层的环状n +层，向前延伸在沿着内侧方向延伸的圆周方向和反向场板上，场板以p和n +层以低电阻接触并通过绝缘膜到达n层的表面，场板的面积不小于n面的一半。这种布置在稳定在恶劣环境中使用的高电压半导体器件的阻断电压方面特别有效，并且对提高高压控制单元的可靠性非常有效。

63. 发明授权

US5285094A Vertical insulated gate semiconductor device with less influence from the parasitic bipolar effect 失效
标题翻译：垂直绝缘栅极半导体器件，具有较小的寄生双极效应影响
公开(公告)号：US5285094A
公开(公告)日：1994-02-08
申请号：US921226
申请日：1992-07-29
申请人： Mutsuhiro Mori , Tomoyuki Tanaka , Yasumichi Yasuda , Yasunori Nakano
发明人： Mutsuhiro Mori , Tomoyuki Tanaka , Yasumichi Yasuda , Yasunori Nakano
IPC分类号： H01L21/225 , H01L21/331 , H01L21/336 , H01L29/739 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L29/66333 , H01L21/2257 , H01L29/66712 , H01L29/7395 , H01L29/7802
摘要： The present invention relates to a semiconductor device having an n-type semiconductor region forming one of the main surfaces of a semiconductor substrate, with a plurality of p-type semiconductor regions formed in the n-type semiconductor region. Two exposed n-type semiconductor regions are formed on each of the p-type semiconductor regions, with a main electrode formed on the n-type semiconductor regions and the exposed p-type semiconductor region therebetween. An insulated gate extends from one of the n-type semiconductor regions in one of the p-type semiconductor regions to a closer one of the n-type semiconductor regions in an adjacent p-type semiconductor region. The length of the insulated gate is longer than a distance between adjacent insulated gates.
摘要翻译：本发明涉及一种半导体器件，其具有形成半导体衬底的主表面之一的n型半导体区域，其中形成在n型半导体区域中的多个p型半导体区域。在p型半导体区域的每一个上形成有两个暴露的n型半导体区域，其中主电极形成在n型半导体区域上，并且其间暴露的p型半导体区域。绝缘栅极从p型半导体区域中的一个中的n型半导体区域中的一个延伸到相邻p型半导体区域中的更靠近的n型半导体区域中的一个。绝缘栅极的长度大于相邻绝缘栅之间的距离。

64. 发明授权

US5274541A Parallel circuit module including a diode and an IGBT 失效
标题翻译：并联电路模块包括二极管和IGBT
公开(公告)号：US5274541A
公开(公告)日：1993-12-28
申请号：US631289
申请日：1990-12-20
申请人： Shin Kimura , Yasuo Matsuda , Norikazu Tokunaga , Mutsuhiro Mori , Toshiki Kurosu , Yutaka Suzuki , Naoki Sakurai , Yasumichi Yasuda , Tomoyuki Tanaka , Kenichi Onda
发明人： Shin Kimura , Yasuo Matsuda , Norikazu Tokunaga , Mutsuhiro Mori , Toshiki Kurosu , Yutaka Suzuki , Naoki Sakurai , Yasumichi Yasuda , Tomoyuki Tanaka , Kenichi Onda
IPC分类号： H01L25/07 , H01L25/18 , H02M7/00 , H02M7/48 , H02M7/5387 , H02P25/04 , H02P27/06 , H03K17/0814 , H03K17/567 , H02H7/122 , H03K17/687
CPC分类号： H02M7/487 , H01L25/072 , H02M7/003 , H03K17/08148 , H03K17/567 , H01L2224/48091 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107
摘要： In a module using a high-speed switching element such as an IGBT for a high-speed inverter, a matching condition is established between the switching characteristic of the IGBT and the recovery characteristic of the diode to be connected thereto in an anti-parallel fashion. As a result, the oscillating voltage appearing in the inverter circuit is suppressed to prevent erroneous operation of the inverter system.
摘要翻译：在使用诸如用于高速逆变器的IGBT的高速开关元件的模块中，以反并联方式在IGBT的开关特性和与其连接的二极管的恢复特性之间建立匹配条件。结果，抑制逆变器电路中出现的振荡电压，以防止逆变器系统的错误操作。

65. 发明授权

US5166760A Semiconductor Schottky barrier device with pn junctions 失效
标题翻译：具有pn结的半导体肖特基势垒器件
公开(公告)号：US5166760A
公开(公告)日：1992-11-24
申请号：US833706
申请日：1992-02-11
申请人： Mutsuhiro Mori , Yasumiti Yasuda , Naoki Sakurai , Hidetoshi Arakawa , Hiroshi Owada
发明人： Mutsuhiro Mori , Yasumiti Yasuda , Naoki Sakurai , Hidetoshi Arakawa , Hiroshi Owada
IPC分类号： H01L25/07 , H01L29/872 , H02M7/00 , H02M7/48 , H02M7/487 , H03K17/0814
CPC分类号： H02M7/487 , H01L24/05 , H01L24/48 , H01L25/072 , H01L29/872 , H02M7/003 , H03K17/08148 , H01L2224/04042 , H01L2224/05558 , H01L2224/05624 , H01L2224/4847 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , Y10S257/927 , Y10S257/928
摘要： A semiconductor device is provided wherein a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J.sub.F is passed into the second diode, the relation ##EQU1## is established in a forward voltage V.sub.F range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant (.apprxeq.1.38.times.10.sup.-23 J/K), T represents the absolute temperature, and q represents the quantity of electron charges (.apprxeq.1.6.times.10.sup.-19 C). The first diode can have a first semiconductor region of one conductivity type and a second semiconductor region of the other conductivity type adjacent to the first semiconductor region to form a pn junction therebetween, so as to be in ohmic contact with one main electrode, and so as to have an impurity concentration higher than that of the first semiconductor region. The second diode can be formed by the first semiconductor region of the one conductivity type and a third semiconductor region of the other conductivity type analogously as above.
摘要翻译：提供一种半导体器件，其中在垂直于电流通过方向的方向上并排设置具有pn结的第一二极管和具有通过电流通过方向的肖特基势垒和pn结的组合的第二二极管。当具有电流密度JF的正向电流通入第二二极管时，在0.1（V）至0.3（V）的正向电压VF范围内建立关系，其中k表示玻尔兹曼常数（约1.38×10 -23J / K），T表示绝对温度，q表示电子电荷的量（APPROX 1.6×10-19℃）。第一二极管可以具有一个导电类型的第一半导体区域和与第一半导体区域相邻的另一导电类型的第二半导体区域，以在它们之间形成pn结，从而与一个主电极欧姆接触，因此具有比第一半导体区域高的杂质浓度。第二二极管可以由一种导电类型的第一半导体区域和另一导电类型的第三半导体区域类似地如上所述形成。

66. 发明授权

US5126806A Lateral insulated gate bipolar transistor 失效
标题翻译：横向绝缘门双极晶体管
公开(公告)号：US5126806A
公开(公告)日：1992-06-30
申请号：US442608
申请日：1989-11-29
申请人： Naoki Sakurai , Mutsuhiro Mori , Tomoyuki Tanaka
发明人： Naoki Sakurai , Mutsuhiro Mori , Tomoyuki Tanaka
IPC分类号： H01L29/68 , H01L29/739 , H01L29/74 , H01L29/749 , H01L29/78
CPC分类号： H01L29/7398 , H01L29/7393 , H01L29/7394
摘要： A lateral insulated gate bipolar transistor comprises a p layer and a p.sup.+ layer provided apart from each other and extending from a surface of an n.sup.- layer into the n.sup.- layer, an n.sup.+ layer provided extending from a surface of the p layer into the p layer, a first main electrode provided in ohmic contact with the n.sup.+ layer and the p layer, a second main electrode provided in ohmic contact with the p.sup.+ layer, and a control electrode provided through an insulating film on the n.sup.+ layer, the p layer and the n.sup.- layer on the side of the first main electrode away from the second main electrode.

67. 发明授权

US4935799A Composite semiconductor device 失效
标题翻译：复合半导体器件
公开(公告)号：US4935799A
公开(公告)日：1990-06-19
申请号：US285328
申请日：1988-12-13
申请人： Mutsuhiro Mori , Tomoyuki Tanaka , Yasumichi Yasuda
发明人： Mutsuhiro Mori , Tomoyuki Tanaka , Yasumichi Yasuda
IPC分类号： H01L27/06 , H01L21/8249 , H01L27/07 , H01L29/73
CPC分类号： H01L27/0716 , H01L29/7302
摘要： Disclosed is a composite semiconductor device which comprises: a second and a third semiconductor regions of a second conductivity type formed in a first semiconductor region of a first conductivity type independently of each other and so as to be exposed on one main surface of a semiconductor substrate; a fourth and a fifth semiconductor regions of the first conductivity type formed in the second semiconductor region independently of each other and so as to be exposed on the one main surface of the semiconductor substrate; a first insulated gate electrode formed on the second semiconductor region located between the fifth and first semiconductor regions and exposed on the one main surface; a second insulated gate electrode formed on the first semiconductor region located between the second and third semiconductor regions and exposed on the one main surface; an electrode which shorts the fourth and third semiconductor regions; another electrode which shorts the second and fifth semiconductor regions; and a further electrode provided in the first semiconductor region.
摘要翻译：公开了一种复合半导体器件，其包括：第二导电类型的第二和第三半导体区域形成在第一导电类型的第一半导体区域中，并且彼此独立地暴露在半导体衬底的一个主表面上 ; 第一导电类型的第四和第五半导体区域彼此独立地形成在第二半导体区域中，并暴露在半导体衬底的一个主表面上; 第一绝缘栅电极，形成在位于第五半导体区域和第一半导体区域之间并暴露在一个主表面上的第二半导体区域上; 第二绝缘栅电极，形成在位于第二和第三半导体区之间的第一半导体区上并暴露在一个主表面上; 短路第四和第三半导体区域的电极; 另一个使第二和第五半导体区域短路的电极; 以及设置在所述第一半导体区域中的另一电极。

68. 发明申请

US20140334212A1 Semiconductor Device and Power Converter 有权
标题翻译：半导体器件和电源转换器
公开(公告)号：US20140334212A1
公开(公告)日：2014-11-13
申请号：US14364959
申请日：2011-12-15
申请人： Takayuki Hashimoto , Mutsuhiro Mori
发明人： Takayuki Hashimoto , Mutsuhiro Mori
IPC分类号： H01L29/739 , H01L29/10 , H02M7/537 , H01L29/88
CPC分类号： H01L29/7397 , H01L27/0727 , H01L29/0834 , H01L29/1095 , H01L29/7395 , H01L29/861 , H01L29/88 , H02M7/537
摘要： A semiconductor device of this invention (an IGBT with a built-in diode) includes: an n−-type drift layer 1; a p-type channel region 2 that is arranged in contact with the surface side of this n−-type drift layer 1; a gate electrode 5 that is provided in a trench T provided so as to penetrate this p-type channel region 2 and reach to the n−-type drift layer 1 through a gate insulating film 3; an n-type source region 4 that is provided so as to contact the trench T on the surface side of the p-type channel region 2; a high-concentration n-type region 6 that is arranged in contact with the back side of the n−-type drift layer 1; and a high-concentration p-type region 7 that is arranged in contact with the back side of this high-concentration n-type region 6; in which a junction of the high-concentration n-type region 6 and the high-concentration p-type region 7 is a tunnel junction. According to this semiconductor device, it is possible to form the IGBT and the diode on a single chip. Moreover, it is possible to avoid problems of “snap back” and “current concentration.”
摘要翻译：本发明的半导体器件（具有内置二极管的IGBT）包括：n型漂移层1; 与该n型漂移层1的表面侧接触的p型沟道区域2; 设置在沟槽T中以设置成穿过该p型沟道区域2并通过栅极绝缘膜3到达n型漂移层1的栅电极5; n型源极区域4，其设置成与p型沟道区域2的表面侧的沟槽T接触; 配置成与n型漂移层1的背面接触的高浓度n型区域6; 以及与该高浓度n型区域6的背面接触的高浓度p型区域7; 其中高浓度n型区域6和高浓度p型区域7的结是隧道结。根据该半导体器件，可以在单个芯片上形成IGBT和二极管。此外，可以避免“回弹”和“当前集中”的问题。

69. 发明授权

US08853736B2 Semiconductor device and power converter using it 有权
标题翻译：半导体器件和功率转换器使用它
公开(公告)号：US08853736B2
公开(公告)日：2014-10-07
申请号：US12766952
申请日：2010-04-26
申请人： Mutsuhiro Mori
发明人： Mutsuhiro Mori
IPC分类号： H01L27/06 , H01L29/739
CPC分类号： H01L27/0664 , H01L29/7391 , H01L29/7395
摘要： A semiconductor device and a power converter using it wherein a switching power device and a flywheel diode are connected in series, the flywheel diode includes a region having a Schottky junction to operate as a Schottky diode and a region having a pn junction to operate as a pn diode and control operation is performed such that when current flows forwardly through the flywheel diode, the pn diode operates and when the flywheel diode recovers backwardly, the Schottky diode operates mainly.
摘要翻译：使用其的半导体器件和功率转换器，其中开关功率器件和续流二极管串联连接，所述续流二极管包括具有用作肖特基二极管的肖特基结的区域和具有pn结的区域作为执行pn二极管和控制操作，使得当电流向前流过续流二极管时，pn二极管工作，并且当飞轮二极管向后恢复时，肖特基二极管主要工作。

70. 发明授权

US08422235B2 Semiconductor device, and power conversion device using semiconductor device 有权
标题翻译：半导体器件和使用半导体器件的功率转换器件
公开(公告)号：US08422235B2
公开(公告)日：2013-04-16
申请号：US12920287
申请日：2009-07-30
申请人： Katsunori Azuma , Mutsuhiro Mori , Kinya Nakatsu , Seiichi Hayakawa , Fusanori Nishikimi
发明人： Katsunori Azuma , Mutsuhiro Mori , Kinya Nakatsu , Seiichi Hayakawa , Fusanori Nishikimi
IPC分类号： H05K1/14
CPC分类号： B60W20/00 , B60K1/02 , B60K6/445 , B60L2200/26 , B60L2240/423 , B60W10/06 , B60W10/08 , B60W2710/0644 , B60W2710/0666 , B60W2710/083 , H01L23/3735 , H01L23/473 , H01L23/49811 , H01L23/50 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/05599 , H01L2224/451 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48472 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01052 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , H02M7/003 , H05K7/20927 , Y02T10/6239 , Y02T10/6269 , Y02T10/6286 , Y02T10/642 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： The present invention provides a vehicle power module and a power converter including a power semiconductor element (328), a plurality of connecting conductors (371U, 372U, 373U) for transmitting current to the power semiconductor element (328), and a metallic base (304) upon which the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted; and the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted upon the metallic base (304) so as to form a looped current path. Desirably, the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, 373U) are arranged so as to form two or more looped current paths.
摘要翻译：本发明提供了一种车辆用电源模块和功率转换器，包括功率半导体元件（328），用于向电力半导体元件（328）传输电流的多个连接导体（371U，372U，373U）和金属基座 304），其上安装有功率半导体元件（328）和多个连接导体（371U，372U和373U）; 功率半导体元件（328）和多个连接导体（371U，372U，373U）安装在金属基座（304）上，形成环路电流路径。期望地，功率半导体元件（328）和多个连接导体（371U，372U，373U）被布置成形成两个或更多个环路电流路径。

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