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61. 发明申请

US20150054034A1 HIGH ELECTRON MOBILITY TRANSISTOR 有权
标题翻译：高电子移动晶体管
公开(公告)号：US20150054034A1
公开(公告)日：2015-02-26
申请号：US14328241
申请日：2014-07-10
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Hsien-Chin CHIU , Chien-Kai TUNG , Heng-Kuang LIN , Chih-Wei YANG , Hsiang-Chun WANG
IPC分类号： H01L29/778
CPC分类号： H01L29/7784 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787
摘要： A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.
摘要翻译：高电子迁移率晶体管包括衬底，布置在衬底上方的外延层，并且具有第一区域和围绕第一区域的第二区域，布置在第一区域中的矩阵电极结构以及电连接多个第一区域的多个第一桥的第二电极。矩阵电极结构包括布置在外延堆叠上的多个第一电极和布置在外延堆叠上并与多个第一电极相邻的多个第二电极。其中一个桥被布置在两个第二电极之间并跨过第一电极中的一个。

62. 发明申请

US20150048418A1 SEMICONDUCTOR POWER DEVICE 有权
标题翻译：半导体功率器件
公开(公告)号：US20150048418A1
公开(公告)日：2015-02-19
申请号：US14256733
申请日：2014-04-18
申请人： HUGA OPTOTECH INC. , EPISTAR CORPORATION
发明人： Heng-Kuang LIN , Yih-Ting KUO , Tsung-Cheng CHANG
IPC分类号： H01L29/778
CPC分类号： H01L29/778 , H01L29/1075 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate, wherein the first semiconductor layer comprises a first group III element; a first grading layer formed on the first semiconductor layer and comprising a first portion; a second semiconductor layer with a second lattice constant formed on the first grading layer, wherein the second semiconductor layer comprises a second group III element; and a first interlayer formed in the first grading layer and adjacent to the first portion of the first grading layer, wherein a composition of the first interlayer is different from that of the first portion, and the first grading layer comprises the first group III element and the second group III element, and concentrations of both the first group III element and the second group III element in the first grading layer are gradually changed.
摘要翻译：一种半导体功率器件，包括：衬底; 在所述基板上形成具有第一晶格常数的第一半导体层，其中所述第一半导体层包括第一III族元素; 形成在所述第一半导体层上并包括第一部分的第一分级层; 形成在所述第一分级层上的具有第二晶格常数的第二半导体层，其中所述第二半导体层包括第二组III元素; 以及形成在第一分级层中并与第一分级层的第一部分相邻的第一中间层，其中第一中间层的组成与第一层的组成不同，第一分级层包含第一III族元素和第二组III元素和第一分级层中的第一组III元素和第二组III元素的浓度逐渐变化。

63. 发明授权

US08659045B2 Light emitting device and methods for forming the same 有权
标题翻译：发光装置及其形成方法
公开(公告)号：US08659045B2
公开(公告)日：2014-02-25
申请号：US11848458
申请日：2007-08-31
申请人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
发明人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.
摘要翻译：本发明提供了一种发光器件，其包括透明衬底，在透明衬底上具有第一部分和第二部分的外延堆叠结构，在外延堆叠结构的第一部分上的II / V族化合物接触层， II / V族化合物接触层上的氮化物结晶层，覆盖氮化物结晶层的透明导电层，透明导电层的一部分上的第一电极和外延层的第二部分上的第二电极结构和结构上与外延堆叠结构的第一部分上的结构分离。氮化物结晶层可以有助于增加发光器件的外部量子效率，从而也可以提高发光器件的发光效率。

64. 发明申请

US20130105846A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130105846A1
公开(公告)日：2013-05-02
申请号：US13662565
申请日：2012-10-29
申请人： HUGA OPTOTECH INC.
发明人： Wei-Chih Wen , Shiou-Yi Kuo , Tai-Chun Wang
IPC分类号： H01L33/20
CPC分类号： H01L33/20 , H01L33/24 , H01L33/60 , H01L33/62
摘要： A semiconductor light emitting device includes a substrate having a main surface and an exposed surface; an epitaxial structure, disposed on the main surface of the substrate, having at least a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, wherein the first type layer has a first sidewall including at least a first etched surface and a second etched surface, wherein angles between the etched surfaces and the exposed surface are acute angles; and an electrode structure disposed on the epitaxial structure.
摘要翻译：半导体发光器件包括具有主表面和暴露表面的衬底; 外延结构，设置在所述基板的主表面上，具有至少第一类型半导体层，发光层和第二类型半导体层，其中所述第一类型层具有第一侧壁，所述第一侧壁至少包括第一蚀刻表面和第二蚀刻表面，其中蚀刻表面和暴露表面之间的角度是锐角; 以及设置在所述外延结构上的电极结构。

65. 发明申请

US20120292657A1 SEMICONDUCTOR LIGHT-EMITTING STRUCTURE 有权
标题翻译：半导体发光结构
公开(公告)号：US20120292657A1
公开(公告)日：2012-11-22
申请号：US13447284
申请日：2012-04-16
申请人： Jun-Sheng Li , Kuo-Chen Wu , Wei-Chih Wen
发明人： Jun-Sheng Li , Kuo-Chen Wu , Wei-Chih Wen
IPC分类号： H01L33/02
CPC分类号： H01L33/20 , H01L33/38 , H01L33/40
摘要： A semiconductor light-emitting structure is provided, which includes a first doped type semiconductor layer, a light-emitting layer, a second doped type semiconductor layer, a first electrical transmission layer and at least one first conductor. The light-emitting layer is disposed on the first doped type semiconductor layer and the second doped type semiconductor layer is disposed on the light-emitting layer. The first electrical transmission layer is disposed on the first doped type semiconductor layer, in which a first interface is formed between the first electrical transmission layer and the first doped type semiconductor layer. The first conductor is disposed on the first doped type semiconductor layer. The first electrical transmission layer connects the first conductor. A second interface is formed between each of the first conductor and the first doped type semiconductor layer, and the resistance of the second interface is less than the resistance of the first interface.
摘要翻译：提供一种半导体发光结构，其包括第一掺杂型半导体层，发光层，第二掺杂型半导体层，第一电传输层和至少一个第一导体。发光层设置在第一掺杂型半导体层上，第二掺杂型半导体层设置在发光层上。第一电传输层设置在第一掺杂型半导体层上，其中在第一电传输层和第一掺杂型半导体层之间形成第一界面。第一导体设置在第一掺杂型半导体层上。第一电传输层连接第一导体。在第一导体和第一掺杂型半导体层中的每一个之间形成第二接口，并且第二接口的电阻小于第一接口的电阻。

66. 发明申请

US20120049234A1 HIGH-BRIGHTNESS LIGHT EMITTING DIODE 有权
标题翻译：高亮度发光二极管
公开(公告)号：US20120049234A1
公开(公告)日：2012-03-01
申请号：US12943918
申请日：2010-11-10
申请人： Chih-Ching Cheng
发明人： Chih-Ching Cheng
IPC分类号： H01L33/42 , H01L33/46
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/44 , H01L2933/0016
摘要： A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, a trench penetrating the second semiconductor layer and the active layer thereby exposing a portion of the first semiconductor layer, an first electrode disposed at the bottom of the trench, an insulating layer covering the trench and the first electrode, and a second electrode disposed overlying the insulating layer in parallel with the first electrode, wherein the second electrode overlaps with the first electrode.
摘要翻译：发光二极管包括衬底，衬底上的第一半导体层，第一半导体层上方的有源层，有源层上方的第二半导体层，穿透第二半导体层和有源层的沟槽，从而暴露部分所述第一半导体层的第一电极，设置在所述沟槽的底部的第一电极，覆盖所述沟槽和所述第一电极的绝缘层和与所述第一电极平行地设置在所述绝缘层上的第二电极，其中所述第二电极与第一个电极。

67. 发明申请

US20110233582A1 SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件
公开(公告)号：US20110233582A1
公开(公告)日：2011-09-29
申请号：US12732537
申请日：2010-03-26
申请人： Chih Ching Cheng , Ching Wen Tung
发明人： Chih Ching Cheng , Ching Wen Tung
IPC分类号： H01L33/58 , H01L33/62
CPC分类号： H01L33/20 , H01L33/007 , H01L33/16
摘要： A semiconductor device includes a substrate and an epitaxy layer positioned on the substrate. In one embodiment of the present disclosure, the substrate includes an upper surface and a plurality of bumps positioned on the upper surface, and each of the bumps includes a top plane substantially parallel to the upper surface and a plurality of wall surfaces between the top plane and the upper surface. In one embodiment of the present disclosure, the epitaxy layer has the same crystal orientation on the upper surface of the substrate and the wall surfaces of the bumps to reduce defect density and increase protection from electrostatic discharge.
摘要翻译：半导体器件包括衬底和位于衬底上的外延层。在本公开的一个实施例中，基板包括位于上表面上的上表面和多个凸起，并且每个凸块包括基本上平行于上表面的顶平面和顶平面之间的多个壁面和上表面。在本公开的一个实施例中，外延层在基板的上表面和凸块的壁表面上具有相同的晶体取向，以减少缺陷密度并增加对静电放电的保护。

68. 发明授权

US08008679B2 Light emitting diode and method 有权
标题翻译：发光二极管及方法
公开(公告)号：US08008679B2
公开(公告)日：2011-08-30
申请号：US12329816
申请日：2008-12-08
申请人： Hsuan-Tang Chan
发明人： Hsuan-Tang Chan
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer on the first substrate; a second substrate holding the epitaxy chip; an isolation layer on the second substrate, the isolation layer having a first portion connecting to one side of the epitaxy chip and a second portion connecting to another side of the epitaxy chip; a first electrode on the first portion of the isolation layer; and a second electrode on the second portion of the isolation layer, wherein the first electrode and the second electrode respectively and electrically connect to the first conductive semiconductor layer and the second conductive semiconductor layer.
摘要翻译：提供一种发光二极管及其形成方法。发光二极管包括在第一衬底上具有第一衬底，第一导电半导体层，发光层和第二导电半导体层的外延芯片; 保持所述外延芯片的第二基板; 在所述第二基板上的隔离层，所述隔离层具有连接到所述外延芯片的一侧的第一部分和连接到所述外延芯片的另一侧的第二部分; 在隔离层的第一部分上的第一电极; 以及在隔离层的第二部分上的第二电极，其中第一电极和第二电极分别电连接到第一导电半导体层和第二导电半导体层。

69. 发明授权

US07956374B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07956374B2
公开(公告)日：2011-06-07
申请号：US12128394
申请日：2008-05-28
申请人： Shu-Wei Chiu
发明人： Shu-Wei Chiu
IPC分类号： H01L33/00
CPC分类号： H01L33/46
摘要： The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer structure is formed on the upper surface of the substrate. The multi-layer structure includes a light-emitting region and at least one semiconductor material layer. The multi-layer structure also has a top surface. The at least one electrode structure is formed on the top surface of the multi-layer structure. The light reflector is formed on the top surface of the multi-layer structure.
摘要翻译：本发明公开了一种半导体发光装置。根据本发明的半导体发光器件包括衬底，多层结构，至少一个电极结构和光反射器。基板具有上表面。多层结构形成在基板的上表面上。多层结构包括发光区域和至少一个半导体材料层。多层结构也具有顶面。至少一个电极结构形成在多层结构的顶表面上。光反射器形成在多层结构的顶表面上。

70. 发明授权

US07947991B2 High efficiency lighting device 有权
标题翻译：高效照明装置
公开(公告)号：US07947991B2
公开(公告)日：2011-05-24
申请号：US12181916
申请日：2008-07-29
申请人： Wei-Kai Wang , Su-Hui Lin , Wen-Chung Shih
发明人： Wei-Kai Wang , Su-Hui Lin , Wen-Chung Shih
IPC分类号： H01L27/15
CPC分类号： H01L33/46 , H01L33/405
摘要： A high efficiency lighting device comprising a light emitting diode structure, an eutectic layer and a distributed-Bragg reflecting layer (DBR) therebetween is disclosed. The distributed-Bragg reflecting layer is attached to said light emitting diode structure by vapor deposition and comprises a plurality of high refraction layers, a plurality of low refraction layers and a micro-contact layer array. The high refraction layers and said low refraction layers are arranged in an alternating manner, so as to form a stacked thin film having an alternate high/low refraction pattern. The micro-contact layers are in said stacked thin film and extend vertically through the stacked thin film, therefore connecting said light emitting diode structure and said eutectic layer.
摘要翻译：公开了一种包括发光二极管结构，共晶层和分布布拉格反射层（DBR）之间的高效照明装置。分布式布拉格反射层通过气相沉积附着到所述发光二极管结构，并且包括多个高折射层，多个低折射层和微接触层阵列。高折射层和所述低折射层以交替的方式布置，以形成具有交替的高/低折射图案的叠层薄膜。微接触层位于所述层叠的薄膜中并且垂直延伸穿过层叠的薄膜，因此连接所述发光二极管结构和所述共晶层。

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